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1. 发明授权

US5518547A Method and apparatus for reducing particulates in a plasma tool through steady state flows 失效
标题翻译：用于通过稳态流减少等离子体工具中的微粒的方法和装置
公开(公告)号：US5518547A
公开(公告)日：1996-05-21
申请号：US178386
申请日：1993-12-23
申请人： Michael S. Barnes , Dennis K. Coultas , John C. Forster , John H. Keller , Thomas Wicker
发明人： Michael S. Barnes , Dennis K. Coultas , John C. Forster , John H. Keller , Thomas Wicker
IPC分类号： C23C16/44 , H01J37/32 , C23C16/00
CPC分类号： H01J37/32871 , C23C16/4401
摘要： A method and apparatus for reducing particulates in a plasma tool using steady state flows includes a device, operatively coupled to a housing in which an object to be processed is positioned, for generating a plasma flow adjacent the object toward a pumping aperture. A pumping mechanism pumps a medium adjacent the object. The medium supports the plasma and entrains particulates in the plasma away from the object and out the pumping aperture. Magnetic fields, produced by multipole magnets forming a ring cusp, are preferably used to produce the plasma flow which is directed radially away from the object to be processed. In a second embodiment, an array of magnets which form a line cusp is provided to produce an opening through which plasma will flow.
摘要翻译：用于使用稳态流减少等离子体工具中的微粒的方法和装置包括可操作地耦合到壳体的装置，其中待处理对象被定位在其中，用于产生邻近物体朝向泵送孔径的等离子体流。泵送机构泵送邻近物体的介质。介质支持等离子体，并将离子束中的等离子体中的微粒夹带在泵送孔径之外。由形成环尖的多极磁体产生的磁场优选用于产生径向远离待处理物体的等离子体流。在第二实施例中，提供形成线尖端的磁体阵列以产生等离子体将流过的开口。

2. 发明授权

US5543184A Method of reducing particulates in a plasma tool through steady state flows 失效
标题翻译：通过稳态流减少等离子体工具中的微粒的方法
公开(公告)号：US5543184A
公开(公告)日：1996-08-06
申请号：US450120
申请日：1995-05-25
申请人： Michael S. Barnes , Dennis K. Coultas , John C. Forster , John H. Keller , Thomas Wicker
发明人： Michael S. Barnes , Dennis K. Coultas , John C. Forster , John H. Keller , Thomas Wicker
IPC分类号： C23C16/44 , H01J37/32 , H05H1/02
CPC分类号： H01J37/32871 , C23C16/4401
摘要： A method and apparatus for reducing particulates in a plasma tool using steady state flows includes a device, operatively coupled to a housing in which an object to be processed is positioned, for generating a plasma flow adjacent the object toward a pumping aperture. A pumping mechanism pumps a medium adjacent the object. The medium supports the plasma and entrains particulates in the plasma away from the object and out the pumping aperture. Magnetic fields, produced by multipole magnets forming a ring cusp, are preferably used to produce the plasma flow which is directed radially away from the object to be processed. In a second embodiment, an array of magnets which form a line cusp is provided to produce an opening through which plasma will flow.
摘要翻译：用于使用稳态流减少等离子体工具中的微粒的方法和装置包括可操作地耦合到壳体的装置，其中待处理对象被定位在其中，用于产生邻近物体朝向泵送孔径的等离子体流。泵送机构泵送邻近物体的介质。介质支持等离子体，并将离子束中的等离子体中的微粒夹带在泵送孔径之外。由形成环尖的多极磁体产生的磁场优选用于产生径向远离待处理物体的等离子体流。在第二实施例中，提供形成线尖端的磁体阵列以产生等离子体将流过的开口。

3. 发明授权

US5433258A Gettering of particles during plasma processing 失效
标题翻译：在等离子体处理期间吸收颗粒
公开(公告)号：US5433258A
公开(公告)日：1995-07-18
申请号：US191894
申请日：1994-02-04
申请人： Michael S. Barnes , Dennis K. Coultas , John C. Forster , John H. Keller , James A. O'Neill
发明人： Michael S. Barnes , Dennis K. Coultas , John C. Forster , John H. Keller , James A. O'Neill
IPC分类号： C23C14/00 , C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/31 , C23C16/30 , C23C14/34 , C23C16/50 , H05H1/00
CPC分类号： H01J37/32431 , H01J2237/022 , H01J2237/028
摘要： Apparatus and methods for plasma processing involving the gettering of particles having a high charge to mass ratio away from a semiconductor wafer are disclosed. In one aspect of the invention, magnets are used to produce a magnetic field which is transverse to an electric field to draw the negative particles away from the wafer to prevent the formation of a sheath which can trap the particles. In a second aspect of the invention, a power source is connected to the wafer electrode to maintain a negative charge on the wafer, thereby preventing negative particles from being drawn to the wafer surface when the plasma is turned off. In other embodiments of the invention, a low density plasma source is used to produce a large plasma sheath which permits particles to cross a chamber to be gettered. A low density plasma discharge followed by a pulse to a higher density is used to overcome the negative effect of an insulating layer between the wafer and the wafer electrode.
摘要翻译：公开了用于等离子体处理的装置和方法，其涉及吸收远离半导体晶片的高电荷质量比的颗粒。在本发明的一个方面，磁体用于产生横向于电场的磁场，以将负极微粒从晶片上拉出以防止形成能够捕获颗粒的护套。在本发明的第二方面中，电源连接到晶片电极以在晶片上保持负电荷，从而防止当等离子体截止时负极被吸引到晶片表面。在本发明的其它实施例中，使用低密度等离子体源来产生允许颗粒穿过室的大等离子体鞘。使用低密度等离子体放电，随后是脉冲到较高密度，以克服晶片和晶片电极之间的绝缘层的负面影响。

4. 发明授权

US5332441A Apparatus for gettering of particles during plasma processing 失效
标题翻译：用于在等离子体处理期间吸除颗粒的装置
公开(公告)号：US5332441A
公开(公告)日：1994-07-26
申请号：US785628
申请日：1991-10-31
申请人： Michael S. Barnes , Dennis K. Coultas , John C. Forster , John H. Keller , James A. O'Neill
发明人： Michael S. Barnes , Dennis K. Coultas , John C. Forster , John H. Keller , James A. O'Neill
IPC分类号： C23C14/00 , C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/31 , C23C16/00 , B05C5/00
CPC分类号： H01J37/32431 , H01J2237/022 , H01J2237/028
摘要： Apparatus for plasma processing involving the gettering of particles having a high charge to mass ratio away from a semiconductor wafer are disclosed. In one aspect of the invention, magnets are used to produce a magnetic field which is transverse to an electric field to draw the negative particles away from the wafer to prevent the formation of a sheath which can trap the particles. In a second aspect of the invention, a power source is connected to the wafer electrode to maintain a negative charge on the wafer, thereby preventing negative particles from being drawn to the wafer surface when the plasma is turned off. In other embodiments of the invention, a low density plasma source is used to produce a large plasma sheath which permits particles to cross a chamber to be gettered. A low density plasma discharge followed by a pulse to a higher density is used to overcome the negative effect of an insulating layer between the wafer and the wafer electrode.
摘要翻译：公开了一种用于等离子体处理的装置，其涉及吸收远离半导体晶片的高电荷质量比的颗粒。在本发明的一个方面，磁体用于产生横向于电场的磁场，以将负极微粒从晶片上拉出以防止形成能够捕获颗粒的护套。在本发明的第二方面中，电源连接到晶片电极以在晶片上保持负电荷，从而防止当等离子体截止时负极被吸引到晶片表面。在本发明的其它实施例中，使用低密度等离子体源来产生允许颗粒穿过室的大等离子体鞘。使用低密度等离子体放电，随后是脉冲到较高密度，以克服晶片和晶片电极之间的绝缘层的负面影响。

5. 发明授权

US5207437A Ceramic electrostatic wafer chuck 失效
标题翻译：陶瓷静电晶片卡盘
公开(公告)号：US5207437A
公开(公告)日：1993-05-04
申请号：US784291
申请日：1991-10-29
申请人： Michael S. Barnes , Dennis K. Coultas , John C. Forster , John H. Keller
发明人： Michael S. Barnes , Dennis K. Coultas , John C. Forster , John H. Keller
IPC分类号： B23Q3/15 , H01L21/683 , H02N13/00
CPC分类号： B23Q3/15 , H01L21/6831 , Y10T279/23
摘要： An electrostatic chuck for semiconductor wafers comprised of a multilayered ceramic, including a back-side-metal layer pattern adjacent the upper wafer receiving surface for generating an electrostatic force. Intermediate via layers connect the pattern to a back-side-metal layer at the bottom of the chuck to which power leads can be connected. A number of small passages, extending from the bottom of the chuck to its upper surface, allow helium heat transfer without the need for surface grooves.
摘要翻译：一种用于半导体晶片的静电卡盘，包括多层陶瓷，其包括邻近上晶片接收表面的背侧金属层图案，用于产生静电力。中间通孔层将图案连接到可连接电源线的卡盘底部的背侧金属层。从卡盘的底部延伸到其上表面的许多小通道允许氦热传递而不需要表面凹槽。

6. 发明授权

US5241245A Optimized helical resonator for plasma processing 失效
标题翻译：用于等离子体处理的优化螺旋谐振器
公开(公告)号：US5241245A
公开(公告)日：1993-08-31
申请号：US879663
申请日：1992-05-06
申请人： Michael S. Barnes , Dennis K. Coultas , John G. Forster , John H. Keller
发明人： Michael S. Barnes , Dennis K. Coultas , John G. Forster , John H. Keller
IPC分类号： H05H1/46 , B01J19/08 , C23C16/50 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H01P7/00
CPC分类号： H01J37/321
摘要： An optimized helical resonator which increases the plasma density for efficient processing of semiconductor wafers is characterized by a low inductance and, hence, a low Q. A first embodiment uses either a distributed or lumped capacitance to reduce the value of .omega.L to less than about 200 Ohms. A second embodiment uses a flat spiral coil having a low value of .omega.L and resonant as a 1/4 or 1/2 wave resonator. A third embodiment combines features of the first two embodiments using both spiral and solenoid coils as the helical resonator.
摘要翻译：提高用于半导体晶片的有效处理的等离子体密度的优化螺旋谐振器的特征在于低电感，因此具有低Q.第一实施例使用分布式或集总电容将ωL的值减小到小于约 200欧姆第二实施例使用具有低ΩΩL值并且谐振的扁平螺旋线圈作为1/4或1/2波形谐振器。第三实施例组合了使用螺旋和螺线管线圈的前两个实施例的特征作为螺旋谐振器。

7. 发明授权

US6028394A Cold electron plasma reactive ion etching using a rotating electromagnetic filter 失效
标题翻译：使用旋转电磁滤波器的冷电子等离子体反应离子蚀刻
公开(公告)号：US6028394A
公开(公告)日：2000-02-22
申请号：US47095
申请日：1998-03-24
申请人： John H. Keller , Dennis K. Coultas
发明人： John H. Keller , Dennis K. Coultas
IPC分类号： H01L21/302 , H01J37/32 , H01L21/3065 , H05H1/46
CPC分类号： H01J37/321 , H01J37/3266 , H01J37/32678
摘要： An apparatus and method for producing a cold electron plasma for etching a work piece. An electromagnetic wave is generated at a first frequency to produce a plasma in a hot plasma region of the etching chamber, the plasma having positive ions, cold electrons, and hot electrons. A plurality of magnetic coils are disposed about the perimeter of the etching chamber for generating a rotating magnetic field with an electron cyclotron resonance at a second frequency. The rotating magnetic field has a magnetic potential such that the rotating magnetic field: (i) allows the positive ions and the cold electrons to diffuse from the plasma through the rotating magnetic field to produce the cold electron plasma in a cold plasma region over the work piece, and (ii) inhibits the hot electrons from the plasma from diffusing through the rotating magnetic field to the cold electron plasma.
摘要翻译：一种用于制造用于蚀刻工件的冷电子等离子体的装置和方法。在第一频率产生电磁波，以在蚀刻室的热等离子体区域产生等离子体，等离子体具有正离子，冷电子和热电子。围绕蚀刻室的周边设置多个磁性线圈，用于产生具有第二频率的电子回旋共振的旋转磁场。旋转磁场具有磁电势，使得旋转磁场：（i）允许正离子和冷电子从等离子体扩散通过旋转磁场，以在工作中的冷等离子体区域中产生冷电子等离子体并且（ii）抑制来自等离子体的热电子通过旋转磁场扩散到冷电子等离子体。

8. 发明授权

US5206516A Low energy, steered ion beam deposition system having high current at low pressure 失效
标题翻译：在低压下具有高电流的低能量，转向离子束沉积系统
公开(公告)号：US5206516A
公开(公告)日：1993-04-27
申请号：US692589
申请日：1991-04-29
申请人： John H. Keller , Dennis K. Coultas
发明人： John H. Keller , Dennis K. Coultas
IPC分类号： H01J37/141 , H01J37/05 , H01J37/317 , H01L21/265 , H01L21/268
CPC分类号： H01J37/05 , H01J37/3178 , H01J2237/0041 , H01J2237/055
摘要： An ion beam deposition system in which ions of different masses and from different sources are independently steered into different parts of an analyzer magnet to be converged into a single wide beam which maintains a perpendicular relationship between the beam and the target. The beam is decelerated by a slit type deceleration lens to an energy suitable for deposition. The target is then scanned across the decelerated beam. The beam is maintained at high current and low pressure by confining electrons away from the magnet and/or adding energy to the low pressure atmosphere inside the analyzer magnet to produce a plasma of electrons and charged particles in order to provide adequate neutralizing of the space charge of the beam.
摘要翻译：一种离子束沉积系统，其中不同质量和不同源的离子被独立地转导到分析器磁体的不同部分中，以被聚集成单个宽光束，其维持光束和目标之间的垂直关系。光束通过狭缝式减速透镜减速到适于沉积的能量。然后将目标扫描在减速梁上。通过将电子限制在远离磁体的位置和/或向分析器磁体内部的低压气氛中增加能量，将光束保持在高电流和低压，以产生电子和带电粒子的等离子体，以便提供足够的中和空间电荷的梁。

9. 发明授权

US6051151A Apparatus and method of producing a negative ion plasma 失效
标题翻译：负离子等离子体的制造方法
公开(公告)号：US6051151A
公开(公告)日：2000-04-18
申请号：US968194
申请日：1997-11-12
申请人： John H. Keller , Dennis K. Coultas
发明人： John H. Keller , Dennis K. Coultas
IPC分类号： H01J37/32 , H05H1/46 , H05H1/00
CPC分类号： H01J37/321 , H01J37/3266 , H01J37/32706 , H05H1/46
摘要： An apparatus and method of producing a negative ion plasma for use in manufacturing of microelectronic devices, particularly etching of microelectronic patterns in semiconductor wafers. A negative ion plasma is produced from a hot electron plasma formed by a RF or UHF plasma source. The negative ion plasma includes positive ions, negative ions and relatively cold electrons, such electrons having an effective electron temperature or average energies less than that for maintaining the plasma. The fields producing the hot plasma are isolated from the negative ion plasma in a cold plasma region by a magnetic filter. The magnetic filter confines the plasmas to provide plasma uniformity at a work piece being etched by the negative ion plasma. The magnetic filter further prevents hot electrons originating in the hot electron plasma from diffusing into the negative ion plasma, while allowing positive ions and cold electrons to diffuse from the hot plasma to the negative ion plasma. An RF bias on the work piece accelerates the positive ions, electrons and/or negative ions to the work piece being etched.
摘要翻译：一种用于制造微电子器件的负离子等离子体的设备和方法，特别是在半导体晶片中蚀刻微电子图案。由RF或UHF等离子体源形成的热电子等离子体产生负离子等离子体。负离子等离子体包括正离子，负离子和相对冷的电子，这样的电子具有比维持等离子体的电子的有效电子温度或平均能量小的电子。通过磁性过滤器在冷等离子体区域中产生热等离子体的场与负离子等离子体隔离。磁性过滤器限制等离子体，以在由负离子等离子体蚀刻的工件上提供等离子体均匀性。磁性过滤器进一步防止来自热电子等离子体的热电子扩散到负离子等离子体中，同时允许正离子和冷电子从热等离子体扩散到负离子等离子体。工件上的RF偏压将正离子，电子和/或负离子加速到被蚀刻的工件。

10. 发明授权

US5304279A Radio frequency induction/multipole plasma processing tool 失效
标题翻译：射频感应/多极等离子体处理工具
公开(公告)号：US5304279A
公开(公告)日：1994-04-19
申请号：US951978
申请日：1992-09-28
申请人： Dennis K. Coultas , John H. Keller
发明人： Dennis K. Coultas , John H. Keller
IPC分类号： C23C16/44 , C23C16/507 , H01J37/32 , H01L21/00 , H01J7/24
CPC分类号： H01J37/321 , C23C16/4404 , C23C16/507 , H01J37/32688
摘要： A dry processing apparatus for plasma etching or deposition includes a chamber for plasma processing having an external wall for housing a work piece with a surface to be plasma processed. A source of an induction field is located outside the chamber on its opposite side from the work piece. A radio frequency induction field applied to the chamber generates a plasma. The plasma is confined within the external wall in the chamber by magnetic dipoles providing a surface magnetic field for confining the plasma. The surface magnetic field is confined to the space adjacent to the external wall. An R.F. generator provides an R.F. generated bias to the work piece. The chamber is lined with a material inert to a plasma or noncontaminating to the work piece, and the induction source in the form of a spiral or involute shaped induction coil is located on the exterior of the liner material on the opposite side of the chamber from the work piece. Distribution of gas to the chamber is uniform because a manifold located about the periphery of the chamber and an orifice formed by the surface of the chamber and the manifold admits gas from the manifold into the chamber at a uniform pressure about the periphery of the cover of the chamber.
摘要翻译：用于等离子体蚀刻或沉积的干式处理装置包括用于等离子体处理的室，其具有用于容纳待加工等离子体表面的工件的外壁。感应场源位于腔室的与工件相对的一侧的外侧。施加到室的射频感应场产生等离子体。等离子体通过提供用于限制等离子体的表面磁场的磁偶极子被限制在室内的外壁内。表面磁场被限制在与外壁相邻的空间。一个R.F. 发电机提供R.F. 产生工件偏差。腔室内衬有对等离子体惰性或不污染工件的材料，螺旋形或渐开线形感应线圈形式的感应源位于衬套材料的外侧，与腔室相反侧工件。气体到腔室的分布是均匀的，因为位于腔室周边的歧管和由腔室的表面和歧管形成的孔口将歧管的气体以围绕盖的周边的均匀压力允许房间。

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