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1. 发明授权

US5540777A Aluminum oxide LPCVD system 失效
标题翻译：氧化铝LPCVD系统
公开(公告)号：US5540777A
公开(公告)日：1996-07-30
申请号：US541284
申请日：1995-10-12
申请人： Steven G. Barbee , Jonathan D. Chapple-Sokol , Richard A. Conti , Richard Hsiao , James A. O'Neill , Narayana V. Sarma , Donald L. Wilson , Justin W.-C. Wong , Steven P. Zuhoski
发明人： Steven G. Barbee , Jonathan D. Chapple-Sokol , Richard A. Conti , Richard Hsiao , James A. O'Neill , Narayana V. Sarma , Donald L. Wilson , Justin W.-C. Wong , Steven P. Zuhoski
IPC分类号： C23C16/40 , C23C16/448 , C23C16/52 , H01L21/205 , H01L21/31 , H01L21/316 , C23C16/00
CPC分类号： C23C16/403 , C23C16/4481 , C23C16/52
摘要： A process and apparatus for Al.sub.2 O.sub.3 CVD on silicon wafers using aluminum tri-isopropoxide in a high-volume production environment is presented. The conditions required to use ATI in a production environment and provide maximum utilization of ATI are first of all delivery of ATI via direct evaporation. The ATI source bottle is pumped out (bypassing substrates) until propene and isopropanol signals are reduced to 1% of process pressure before start of aluminum oxide deposition. Either IR spectroscopy or mass spectrometry can be used to provide a control signal to the microprocessor controller. Heating the supplied tetramer to 120.degree. C. for two hours assures complete conversion to trimer. The ATI is stored at 90.degree. C. to minimize decomposition during idle periods and allow recovery of trimer upon return to 120.degree. C. for two hours. During periods of demand, the ATI is held at 120.degree. C. to minimize decomposition.
摘要翻译：介绍了在大批量生产环境中使用三异丙氧基铝的硅晶片上Al2O3 CVD的工艺和装置。在生产环境中使用ATI并提供ATI的最大利用率所需的条件首先通过直接蒸发传送ATI。在开始氧化铝沉积之前，将ATI源瓶泵出（旁路基板），直到丙烯和异丙醇信号降低到过程压力的1％。可以使用红外光谱或质谱法向微处理器控制器提供控制信号。将供应的四聚体加热至120℃保持两小时，确保完全转化为三聚体。将ATI储存在90℃以使空闲期间的分解最小化，并允许在回到120℃回收三聚体两小时。在需求期间，ATI保持在120℃以最小化分解。

2. 发明授权

US5332441A Apparatus for gettering of particles during plasma processing 失效
标题翻译：用于在等离子体处理期间吸除颗粒的装置
公开(公告)号：US5332441A
公开(公告)日：1994-07-26
申请号：US785628
申请日：1991-10-31
申请人： Michael S. Barnes , Dennis K. Coultas , John C. Forster , John H. Keller , James A. O'Neill
发明人： Michael S. Barnes , Dennis K. Coultas , John C. Forster , John H. Keller , James A. O'Neill
IPC分类号： C23C14/00 , C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/31 , C23C16/00 , B05C5/00
CPC分类号： H01J37/32431 , H01J2237/022 , H01J2237/028
摘要： Apparatus for plasma processing involving the gettering of particles having a high charge to mass ratio away from a semiconductor wafer are disclosed. In one aspect of the invention, magnets are used to produce a magnetic field which is transverse to an electric field to draw the negative particles away from the wafer to prevent the formation of a sheath which can trap the particles. In a second aspect of the invention, a power source is connected to the wafer electrode to maintain a negative charge on the wafer, thereby preventing negative particles from being drawn to the wafer surface when the plasma is turned off. In other embodiments of the invention, a low density plasma source is used to produce a large plasma sheath which permits particles to cross a chamber to be gettered. A low density plasma discharge followed by a pulse to a higher density is used to overcome the negative effect of an insulating layer between the wafer and the wafer electrode.
摘要翻译：公开了一种用于等离子体处理的装置，其涉及吸收远离半导体晶片的高电荷质量比的颗粒。在本发明的一个方面，磁体用于产生横向于电场的磁场，以将负极微粒从晶片上拉出以防止形成能够捕获颗粒的护套。在本发明的第二方面中，电源连接到晶片电极以在晶片上保持负电荷，从而防止当等离子体截止时负极被吸引到晶片表面。在本发明的其它实施例中，使用低密度等离子体源来产生允许颗粒穿过室的大等离子体鞘。使用低密度等离子体放电，随后是脉冲到较高密度，以克服晶片和晶片电极之间的绝缘层的负面影响。

3. 发明授权

US5193298A Fishing rod apparatus 失效
标题翻译：钓鱼竿设备
公开(公告)号：US5193298A
公开(公告)日：1993-03-16
申请号：US826032
申请日：1992-01-27
申请人： James A. O'Neill
发明人： James A. O'Neill
IPC分类号： A01K91/02
CPC分类号： A01K91/02
摘要： A fishing rod apparatus is arranged with a first and second rod tube reciprocatably mounting a plunger therethrough. The second rod tube selectively utilizes spring or pneumatic pressure to direct the rod exteriorly through a forward end portion of the first tube. The forward end portion of the first tube is arranged to position a fishing line support such as a float to direct the associated fishing line to a desired target casting position relative to the rod structure.
摘要翻译：钓竿装置布置有第一和第二杆管，其可往复运动地安装柱塞通过其中。第二杆管选择性地利用弹簧或气动压力将杆引导到第一管的前端部分外部。第一管的前端部分布置成定位钓线支撑件例如浮子，以将相关联的钓鱼线相对于杆结构引导到期望的目标铸造位置。

4. 发明授权

US5534066A Fluid delivery apparatus having an infrared feedline sensor 失效
标题翻译：流体输送装置具有红外馈线传感器
公开(公告)号：US5534066A
公开(公告)日：1996-07-09
申请号：US143228
申请日：1993-10-29
申请人： James A. O'Neill , Michael L. Passow , Tina J. Cotler , Jonathan D. Chapple-Sokol , Richard A. Conti , Jyothi Singh
发明人： James A. O'Neill , Michael L. Passow , Tina J. Cotler , Jonathan D. Chapple-Sokol , Richard A. Conti , Jyothi Singh
IPC分类号： G01N21/33 , C23C16/44 , C23C16/455 , C23C16/52 , C23F4/00 , G01N21/35 , H01L21/205 , H01L21/302 , H01L21/31 , H01L31/00 , B05C5/00
CPC分类号： G01N21/3504 , C23C16/52
摘要： An apparatus for processing a layer on a workpiece includes a source of reactant fluid, a reaction chamber having a support for the workpiece and a fluid delivery apparatus for feeding an input fluid into the reaction chamber with the input fluid being utilized to process the material. An infrared sensor is adapted to cooperate with the fluid delivery apparatus for sensing the concentration of a component of the input fluid. The infrared sensor includes an infrared light source positioned to direct a beam of infrared light at an infrared light detector through the input fluid. The infrared light detector produces an electrical output signal indicative of the amount of light received by the detector and therefore not absorbed by the input fluid.
摘要翻译：用于处理工件上的层的设备包括反应物流体源，具有用于工件的支撑的反应室和用于将输入流体输送到反应室中的流体输送装置，其中输入流体用于处理材料。红外传感器适于与流体输送装置配合，用于感测输入流体的组分的浓度。红外传感器包括红外光源，其被定位成通过输入流体引导红外光检测器处的红外光束。红外光检测器产生指示由检测器接收的光量的电输出信号，因此不被输入流体吸收。

5. 发明申请

US20180165131A1 OFFLOAD COMPUTING PROTOCOL 审中-公开
公开(公告)号：US20180165131A1
公开(公告)日：2018-06-14
申请号：US15375940
申请日：2016-12-12
申请人： Fearghal O'Hare , Michael Nolan , James A. O'Neill
发明人： Fearghal O'Hare , Michael Nolan , James A. O'Neill
IPC分类号： G06F9/50 , H04L12/24 , H04W4/00 , G06F9/455
摘要： Systems and methods for are provided for offloading computing tasks from constrained devices. An example apparatus includes an offload computing protocol (OCP) enabled device. The OCP enabled device includes OCP extensions to the operating system to enable the offloading of computing tasks. A proximity locator may use a radio transceiver to locate an OCP device that can accept a computing task. The OCP enabled device may include an OCP bundle comprising code and data, wherein the OCP bundle is to be sent to the OCP device.

6. 发明授权

US5433258A Gettering of particles during plasma processing 失效
标题翻译：在等离子体处理期间吸收颗粒
公开(公告)号：US5433258A
公开(公告)日：1995-07-18
申请号：US191894
申请日：1994-02-04
申请人： Michael S. Barnes , Dennis K. Coultas , John C. Forster , John H. Keller , James A. O'Neill
发明人： Michael S. Barnes , Dennis K. Coultas , John C. Forster , John H. Keller , James A. O'Neill
IPC分类号： C23C14/00 , C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/31 , C23C16/30 , C23C14/34 , C23C16/50 , H05H1/00
CPC分类号： H01J37/32431 , H01J2237/022 , H01J2237/028
摘要： Apparatus and methods for plasma processing involving the gettering of particles having a high charge to mass ratio away from a semiconductor wafer are disclosed. In one aspect of the invention, magnets are used to produce a magnetic field which is transverse to an electric field to draw the negative particles away from the wafer to prevent the formation of a sheath which can trap the particles. In a second aspect of the invention, a power source is connected to the wafer electrode to maintain a negative charge on the wafer, thereby preventing negative particles from being drawn to the wafer surface when the plasma is turned off. In other embodiments of the invention, a low density plasma source is used to produce a large plasma sheath which permits particles to cross a chamber to be gettered. A low density plasma discharge followed by a pulse to a higher density is used to overcome the negative effect of an insulating layer between the wafer and the wafer electrode.
摘要翻译：公开了用于等离子体处理的装置和方法，其涉及吸收远离半导体晶片的高电荷质量比的颗粒。在本发明的一个方面，磁体用于产生横向于电场的磁场，以将负极微粒从晶片上拉出以防止形成能够捕获颗粒的护套。在本发明的第二方面中，电源连接到晶片电极以在晶片上保持负电荷，从而防止当等离子体截止时负极被吸引到晶片表面。在本发明的其它实施例中，使用低密度等离子体源来产生允许颗粒穿过室的大等离子体鞘。使用低密度等离子体放电，随后是脉冲到较高密度，以克服晶片和晶片电极之间的绝缘层的负面影响。

7. 发明授权

US5492718A Fluid delivery apparatus and method having an infrared feedline sensor 失效
标题翻译：流体输送装置和方法具有红外馈线传感器
公开(公告)号：US5492718A
公开(公告)日：1996-02-20
申请号：US349230
申请日：1994-12-05
申请人： James A. O'Neill , Michael L. Passow , Tina J. Cotler , Jonathan D. Chapple-Sokol , Richard A. Conti , Jyothi Singh
发明人： James A. O'Neill , Michael L. Passow , Tina J. Cotler , Jonathan D. Chapple-Sokol , Richard A. Conti , Jyothi Singh
IPC分类号： G01N21/33 , C23C16/44 , C23C16/455 , C23C16/52 , C23F4/00 , G01N21/35 , H01L21/205 , H01L21/302 , H01L21/31 , H01L31/00 , B05D3/06 , C23C8/00
CPC分类号： G01N21/3504 , C23C16/52
摘要： An apparatus for processing a layer on a workpiece includes a source of reactant fluid, a reaction chamber having a support for the workpiece and a fluid delivery apparatus for feeding an input fluid into the reaction chamber with the input fluid being utilized to process the material. An infrared sensor is adapted to cooperate with the fluid delivery apparatus for sensing the concentration of a component of the input fluid. The infrared sensor includes an infrared light source positioned to direct a beam of infrared light at an infrared light detector through the input fluid. The infrared light detector produces an electrical output signal indicative of the amount of light received by the detector and therefore not absorbed by the input fluid.
摘要翻译：用于处理工件上的层的设备包括反应物流体源，具有用于工件的支撑的反应室和用于将输入流体输送到反应室中的流体输送装置，其中输入流体用于处理材料。红外传感器适于与流体输送装置配合，用于感测输入流体的组分的浓度。红外传感器包括红外光源，其被定位成通过输入流体引导红外光检测器处的红外光束。红外光检测器产生指示由检测器接收的光量的电输出信号，因此不被输入流体吸收。

8. 发明授权

US5284549A Selective fluorocarbon-based RIE process utilizing a nitrogen additive 失效
标题翻译：选择性碳氟化合物的RIE工艺利用氮添加剂
公开(公告)号：US5284549A
公开(公告)日：1994-02-08
申请号：US816190
申请日：1992-01-02
申请人： Michael S. Barnes , Melanie M. Chow , John C. Forster , Michael A. Fury , Chang-Ching Kin , Harris C. Jones , John H. Keller , James A. O'Neill
发明人： Michael S. Barnes , Melanie M. Chow , John C. Forster , Michael A. Fury , Chang-Ching Kin , Harris C. Jones , John H. Keller , James A. O'Neill
IPC分类号： C03C15/00 , H01L21/311 , H01L21/00
CPC分类号： C03C15/00 , H01L21/31116 , Y10S438/97
摘要： A CHF.sub.3 -based RIE etching process is disclosed using a nitrogen additive to provide high selectivity of SiO.sub.2 or PSG to Al.sub.2 O.sub.3, low chamfering of a photoresist mask, and low RIE lag. The process uses a pressure in the range of about 200-1,000 mTorr, and an appropriate RF bias power, selected based on the size of the substrate being etched. The substrate mounting pedestal is preferably maintained at a temperature of about 0.degree. C. Nitrogen can be provided from a nitrogen-containing molecule, or as N.sub.2. He gas can be added to the gas mixture to enhance the RIE lag-reducing effect of the nitrogen.
摘要翻译：使用氮添加剂公开了基于CHF 3的RIE蚀刻工艺，以提供SiO 2或PSG对Al 2 O 3的高选择性，光刻胶掩模的低倒角和低RIE滞后。该方法使用约200-1,000mTorr范围内的压力和基于被蚀刻的基底的尺寸选择的适当的RF偏置功率。衬底安装基座优选保持在约0℃的温度。氮可以由含氮分子或N 2提供。可以将气体加入到气体混合物中，以提高氮气的RIE滞后效应。

9. 发明授权

US5200023A Infrared thermographic method and apparatus for etch process monitoring and control 失效
标题翻译：用于蚀刻过程监测和控制的红外热成像方法和设备
公开(公告)号：US5200023A
公开(公告)日：1993-04-06
申请号：US753189
申请日：1991-08-30
申请人： George G. Gifford , James A. O'Neill
发明人： George G. Gifford , James A. O'Neill
IPC分类号： H01J37/32 , H05H1/46
CPC分类号： H01J37/32871 , H01J37/32935 , H01J37/32963 , H01J37/3299 , H05H1/46
摘要： An infrared television camera (20) monitors the etching of a substrate (26) in-situ in an etch chamber (24). Temporal and spatial resolution of IR emissions is obtained by monitoring the top surface of the substrate (26) in two-dimensions throughout the course of the etching process. Anomalies in temperature detected on the top surface of the substrate (26) can indicate defects in the substrate (26) itself or in the operation of the etching apparatus. Process feedback control is achieved by adjusting various parameters of the etching apparatus (i.e., gas-pressure, flow pattern, magnetic field, coolant flow to electrode, or the like) to compensate for etching anomalies. Etch uniformity and etch endpoint monitoring is achieved by monitoring the IR emissions resulting from exothermic reaction of the film being etched. IR emissions decline at the end of an exothermic etch reaction. Particulate matter which might otherwise harm the substrate (26) can be identified in the gas-phase with a second IR television camera (34) which images the region above the substrate (26). Particulate matter appears as localized "hot spots" within the gas plasma, and the identification of particulate matter allows corrective measures to be taken.
摘要翻译：红外电视摄像机（20）在蚀刻室（24）中原位监测衬底（26）的蚀刻。通过在蚀刻过程的整个过程中二维地监测衬底（26）的顶表面来获得IR发射的时间和空间分辨率。在基板（26）的顶表面上检测到的温度异常可以指示基板（26）本身的缺陷或蚀刻装置的操作中的缺陷。通过调整蚀刻装置的各种参数（即，气体压力，流动模式，磁场，冷却剂流向电极等）来实现过程反馈控制，以补偿蚀刻异常。蚀刻均匀性和蚀刻端点监测通过监测被蚀刻的膜的放热反应产生的IR辐射来实现。在放热蚀刻反应结束时，IR辐射下降。否则可能会损害基板（26）的颗粒物质可以在对基板（26）上方的区域进行成像的第二IR电视摄像机（34）的气相中识别。颗粒物质在气体等离子体中呈现为局部“热点”，微粒物质的识别允许采取纠正措施。

10. 发明授权

US4746493A Waveguide reaction cell 失效
标题翻译：波导反应池
公开(公告)号：US4746493A
公开(公告)日：1988-05-24
申请号：US907245
申请日：1986-09-15
申请人： James A. O'Neill
发明人： James A. O'Neill
IPC分类号： B01J19/12 , B01J1/10 , B01K1/00
CPC分类号： B01J19/121
摘要： A process for inducing photochemical reactions using laser radiation employs a dielectric waveguide cell formed by a capillary passage communicating at its ends with a gas inlet chamber and a gas outlet chamber, each chamber being configured to encompass a cone of laser radiation focussed onto, or diverging from, the respective end of the capillary passage. The passage is configured to propagate the laser radiation therealong in one or more selected waveguide modes, thus defining an extended region of high fluence.
摘要翻译：使用激光辐射诱导光化学反应的方法采用由其末端与气体入口室和气体出口室连通的毛细通道形成的电介质波导电池，每个腔室被构造成包围聚焦于或发散的激光辐射锥体从毛细通道的相应末端开始。该通道被配置成在一个或多个所选择的波导模式中传播其上的激光辐射，从而限定了高注量的扩展区域。

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