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1. 发明授权

US06444103B1 Method and apparatus for thin film deposition using an active shutter 失效
标题翻译：使用主动快门进行薄膜沉积的方法和装置
公开(公告)号：US06444103B1
公开(公告)日：2002-09-03
申请号：US09662575
申请日：2000-09-15
申请人： Mehrdad M. Moslehi , Yong Jin Lee , Cecil J. Davis , Ajit P. Paranjpe
发明人： Mehrdad M. Moslehi , Yong Jin Lee , Cecil J. Davis , Ajit P. Paranjpe
IPC分类号： C23C1434
CPC分类号： H01J37/3447 , C23C14/3464 , C23C14/564
摘要： Material is deposited from an active shutter onto a substrate located in a processing chamber housing with a shutter target coupled to a shutter target assembly. A first target assembly located in the housing supports a target for physical-vapor deposition of a first material onto the substrate. A shutter is selectively moveable to extend into a closed or activated position and to retract into an open position. The shutter target assembly is coupled to the shutter such that when the shutter is in the closed position, the shutter target assembly is positioned to allow deposition of material from the shutter target onto the substrate. When the shutter is in the open position, the first target is positioned to deposit material onto the substrate. Alternating layers of materials may be deposited by the shutter target and first target by cycling the shutter between an open position and a closed position.
摘要翻译：材料从活动快门沉积到位于处理室壳体中的基板上，其中快门目标件联接到快门目标组件。位于壳体中的第一目标组件支撑用于将第一材料物理 - 气相沉积到衬底上的靶。快门选择性地可移动以延伸到关闭或启动位置并缩回到打开位置。快门目标组件联接到快门，使得当快门处于关闭位置时，快门目标组件被定位成允许材料从快门目标物体沉积到基板上。当快门处于打开位置时，第一目标定位成将材料沉积到基板上。通过在打开位置和关闭位置之间循环活门，可以通过快门目标和第一目标来沉积材料的交替层。

2. 发明授权

US5217559A Apparatus and method for in-situ deep ultraviolet photon-assisted semiconductor wafer processing 失效
标题翻译：用于原位深紫外光子辅助半导体晶片加工的装置和方法
公开(公告)号：US5217559A
公开(公告)日：1993-06-08
申请号：US625186
申请日：1990-12-10
申请人： Mehrdad M. Moslehi , Ajit P. Paranjpe , Cecil J. Davis
发明人： Mehrdad M. Moslehi , Ajit P. Paranjpe , Cecil J. Davis
IPC分类号： H01L21/302 , H01L21/00 , H01L21/205 , H01L21/268 , H01L21/3065
CPC分类号： H01L21/67115 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/2686
摘要： An in-situ deep-ultraviolet light generation module (126) for photon-assisted processing of semiconductor wafers (44) comprises a process environment space (152) for photochemical processing applications. Process gas injection space (182) receives reactive process gases and injects them into process environment space (152). Plasma fill space (124) receives a plasma (120) and may direct plasma (120) away from or into the process environment space (152) according to the presence or absence of control gas (160) flow. Control gas space (174) and flow/pressure switch space (154) receive control gas (160) to selectively permit deep-ultraviolet photons or plasma to reach process environment space (152) and interact with wafer (44) for photo-enhanced or plasma-enhanced wafer processing.
摘要翻译：用于半导体晶片（44）的光子辅助处理的原位深紫外光发生模块（126）包括用于光化学处理应用的工艺环境空间（152）。工艺气体注入空间（182）接收反应性工艺气体并将其注入工艺环境空间（152）。等离子体填充空间（124）接收等离子体（120）并且可以根据是否存在控制气体（160）流将等离子体（120）引导到过程环境空间（152）或进入过程环境空间（152）。控制气体空间（174）和流量/压力开关空间（154）接收控制气体（160）以选择性地允许深紫外光子或等离子体到达处理环境空间（152）并与晶片（44）相互作用以进行光增强或等离子体增强晶片处理。

3. 发明授权

US5435379A Method and apparatus for low-temperature semiconductor processing 失效
标题翻译：低温半导体加工方法和装置
公开(公告)号：US5435379A
公开(公告)日：1995-07-25
申请号：US930074
申请日：1992-08-14
申请人： Mehrdad M. Moslehi , Habib N. Najm , Ajit P. Paranjpe , Cecil J. Davis
发明人： Mehrdad M. Moslehi , Habib N. Najm , Ajit P. Paranjpe , Cecil J. Davis
IPC分类号： H01L21/302 , F04B23/02 , F04B49/24 , H01J37/34 , H01L21/00 , H01L21/3065 , H01L21/683 , F28D15/00
CPC分类号： H01L21/67103 , F04B23/028 , F04B49/24 , H01J37/34 , H01J2237/2001 , H01J2237/32
摘要： A chilling system (12) has a container (20) filled with a coolant (22). A pipe (16) traverses within the container (20) and the coolant (22) to a housing (18). Fluid flows within the pipe (16) and becomes chilled through the pipe (16) upon entering the container (20) and the coolant (22). The chilled fluid enters the housing (18) chilling the housing (18) through the pipe (16). In turn, semiconductor substrate (19) in contact with the housing (18) also is chilled.
摘要翻译：冷却系统（12）具有填充有冷却剂（22）的容器（20）。管道（16）在容器（20）和冷却剂（22）内移动到壳体（18）。流体在管道（16）内流动，并且在进入容器（20）和冷却剂（22）时通过管道（16）变冷。冷冻流体通过管道（16）进入冷却壳体（18）的壳体（18）。反过来，与壳体（18）接触的半导体衬底（19）也被冷却。

4. 发明授权

US06905578B1 Apparatus and method for multi-target physical-vapor deposition of a multi-layer material structure 失效
标题翻译：多层材料结构的多目标物理气相沉积的装置和方法
公开(公告)号：US06905578B1
公开(公告)日：2005-06-14
申请号：US09067143
申请日：1998-04-27
申请人： Mehrdad M. Moslehi , Cecil J. Davis , Christopher J. Mann , Dwain R. Jakubik , Ajit P. Paranjpe
发明人： Mehrdad M. Moslehi , Cecil J. Davis , Christopher J. Mann , Dwain R. Jakubik , Ajit P. Paranjpe
IPC分类号： C23C14/56 , C23C14/34 , C23C16/00
CPC分类号： C23C14/568
摘要： An apparatus and method for depositing plural layers of materials on a substrate within a single vacuum chamber allows high-throughput deposition of structures such as these for GMR and MRAM application. An indexing mechanism aligns a substrate with each of plural targets according to the sequence of the layers in the structure. Each target deposits material using a static physical-vapor deposition technique. A shutter can be interposed between a target and a substrate to block the deposition process for improved deposition control. The shutter can also preclean a target or the substrate and can also be used for mechanical chopping of the deposition process. In alternative embodiments, plural substrates may be aligned sequentially with plural targets to allow simultaneous deposition of plural structures within the single vacuum chamber. A monitoring and control device can be wed to optimize equipment state, process state, and wafer state parameters by sensing each respective state during or after the deposition process.
摘要翻译：用于在单个真空室内的衬底上沉积多层材料的装置和方法允许诸如这些结构的高通量沉积用于GMR和MRAM应用。分度机构根据结构中的层序列将衬底与多个靶中的每一个对准。每个目标使用静态物理气相沉积技术沉积材料。可以在目标和基板之间插入快门以阻止沉积工艺以改善沉积控制。快门还可以预清洁目标物或基底，并且还可用于沉积过程的机械切割。在替代实施例中，多个基板可以与多个靶顺序对准，以允许在单个真空室内同时沉积多个结构。可以通过在沉积过程中或之后感测每个相应的状态来优化设备状态，过程状态和晶片状态参数的监控和控制设备。

5. 发明授权

US5591493A Structure and method for incorporating an inductively coupled plasma source in a plasma processing chamber 失效
标题翻译：在等离子体处理室中结合电感耦合等离子体源的结构和方法
公开(公告)号：US5591493A
公开(公告)日：1997-01-07
申请号：US472606
申请日：1995-06-07
申请人： Ajit P. Paranjpe , Cecil J. Davis , Robert T. Matthews
发明人： Ajit P. Paranjpe , Cecil J. Davis , Robert T. Matthews
IPC分类号： C23C16/50 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H05H1/46 , C23C16/00
CPC分类号： H01J37/321 , H05H1/46
摘要： A plasma processing chamber 10 having an inductively coupled plasma (ICP) source 12 mounted therein. The ICP source 12 comprises an antenna 14 encapsulated in epoxy 16 and surrounded by housing 18. The antenna 14 and epoxy 16 are hermetically sealed from plasma formation region 30. The antenna 14 is powered by at least one RF power supply 40 through at least one RF matching network 42. Dielectric capping plate 28 separates ICP source 12 from the plasma formation region 30 and may have a plurality of holes therein to provide a uniform showerhead distribution of process gases.
摘要翻译：具有安装在其中的感应耦合等离子体（ICP）源12的等离子体处理室10。 ICP源12包括封装在环氧树脂16中并被壳体18包围的天线14.天线14和环氧树脂16与等离子体形成区域30气密密封。天线14由至少一个RF电源40通过至少一个 RF匹配网络42.介电封盖板28将ICP源12与等离子体形成区域30分离，并且可以在其中具有多个孔以提供工艺气体均匀的喷头分布。

6. 发明授权

US5580385A Structure and method for incorporating an inductively coupled plasma source in a plasma processing chamber 失效
标题翻译：在等离子体处理室中结合电感耦合等离子体源的结构和方法
公开(公告)号：US5580385A
公开(公告)日：1996-12-03
申请号：US269414
申请日：1994-06-30
申请人： Ajit P. Paranjpe , Cecil J. Davis , Robert T. Matthews
发明人： Ajit P. Paranjpe , Cecil J. Davis , Robert T. Matthews
IPC分类号： C23C16/50 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H05H1/46 , C23C16/00
CPC分类号： H01J37/321 , H05H1/46
摘要： A plasma processing chamber 10 having an inductively coupled plasma (ICP) source 12 mounted therein. The ICP source 12 comprises an antenna 14 encapsulated in epoxy 16 and surrounded by housing 18. The antenna 14 and epoxy 16 are hermetically sealed from plasma formation region 30. The antenna 14 is powered by at least one RF power supply 40 through at least one RF matching network 42. Dielectric capping plate 28 separates ICP source 12 from the plasma formation region 30 and may have a plurality of holes therein to provide a uniform showerhead distribution of process gases.
摘要翻译：具有安装在其中的感应耦合等离子体（ICP）源12的等离子体处理室10。 ICP源12包括封装在环氧树脂16中并被壳体18包围的天线14.天线14和环氧树脂16与等离子体形成区域30气密密封。天线14由至少一个RF电源40通过至少一个 RF匹配网络42.介电封盖板28将ICP源12与等离子体形成区域30分离，并且可以在其中具有多个孔以提供工艺气体均匀的喷头分布。

7. 发明授权

US6126790A Method of magnetically orienting thin magnetic films with a multiple-coil electromagnet 有权
标题翻译：用多线圈电磁铁磁性取向薄磁膜的方法
公开(公告)号：US6126790A
公开(公告)日：2000-10-03
申请号：US499144
申请日：2000-02-07
申请人： Mehrdad M. Moslehi , Shiyuan Cheng , Cecil J. Davis , Dorian Heimanson
发明人： Mehrdad M. Moslehi , Shiyuan Cheng , Cecil J. Davis , Dorian Heimanson
IPC分类号： B05D5/12 , C23C14/00 , C23C14/22 , C23C14/35 , C23C14/58 , H01F3/00 , H01F5/00 , H01F7/20 , H01F41/14 , H01F41/18 , H01H1/00
CPC分类号： C23C14/22 , C23C14/351 , H01F41/14 , H01F41/18 , H01F7/20
摘要： An electromagnet assembly magnetically orients a thin magnetic film deposited onto a surface of a substrate. The magnetic orientation can take place in a low-pressure processing environment such as during the deposition of the thin magnetic film or during a subsequent operation such as annealing. The electromagnet assembly includes a plate-shaped core located adjacent to the substrate and two or more electromagnetic coils that are wrapped in different directions around the core. Electrical currents conveyed through the electromagnetic coils are controlled for orienting a substantially uniaxial magnetic field throughout a range of angular positions in a plane of the substrate surface.
摘要翻译：电磁体组件磁性地定向沉积在基底表面上的薄磁膜。磁性取向可以在低压处理环境中进行，例如在薄磁膜的沉积期间或在诸如退火的后续操作期间。电磁体组件包括位于基板附近的板状铁芯和围绕铁芯缠绕在不同方向上的两个或多个电磁线圈。控制通过电磁线圈输送的电流用于在衬底表面的平面中的角位置的整个范围内定向基本上单轴的磁场。

8. 发明授权

US6042707A Multiple-coil electromagnet for magnetically orienting thin films 失效
标题翻译：用于磁取向薄膜的多线圈电磁铁
公开(公告)号：US6042707A
公开(公告)日：2000-03-28
申请号：US83363
申请日：1998-05-22
申请人： Mehrdad M. Moslehi , Shiyuan Cheng , Cecil J. Davis , Dorian Heimanson
发明人： Mehrdad M. Moslehi , Shiyuan Cheng , Cecil J. Davis , Dorian Heimanson
IPC分类号： B05D5/12 , C23C14/00 , C23C14/22 , C23C14/35 , C23C14/58 , H01F3/00 , H01F5/00 , H01F7/20 , H01F41/14 , H01F41/18 , H01H1/00 , C14C14/35
CPC分类号： C23C14/22 , C23C14/351 , H01F41/14 , H01F41/18 , H01F7/20
摘要： An electromagnet assembly magnetically orients a thin magnetic film deposited onto a surface of a substrate. The magnetic orientation can take place in a low-pressure processing environment such as during the deposition of the thin magnetic film or during a subsequent operation such as annealing. The electromagnet assembly includes a plate-shaped core located adjacent to the substrate and two or more electromagnetic coils that are wrapped in different directions around the core. Electrical currents conveyed through the electromagnetic coils are controlled for orienting a substantially uniaxial magnetic field throughout a range of angular positions in a plane of the substrate surface.
摘要翻译：电磁体组件磁性地定向沉积在基底表面上的薄磁膜。磁性取向可以在低压处理环境中进行，例如在薄磁膜的沉积期间或在诸如退火的后续操作期间。电磁体组件包括位于基板附近的板状铁芯和围绕铁芯缠绕在不同方向上的两个或多个电磁线圈。控制通过电磁线圈输送的电流用于在衬底表面的平面中的角位置的整个范围内定向基本上单轴的磁场。

9. 发明授权

US06705394B1 Rapid cycle chuck for low-pressure processing 失效
标题翻译：快速循环卡盘用于低压处理
公开(公告)号：US06705394B1
公开(公告)日：2004-03-16
申请号：US09664011
申请日：2000-09-19
申请人： Mehrdad M. Moslehi , Xiangqun Chen , Shiyuan Cheng , Cecil J. Davis
发明人： Mehrdad M. Moslehi , Xiangqun Chen , Shiyuan Cheng , Cecil J. Davis
IPC分类号： C23C1602
CPC分类号： H01L21/67248 , C23C16/4586 , C23C16/46 , C23C16/463 , H01L21/67109
摘要： Rapid thermal cycling of substrates in low-pressure processing environments is achieved by movable temperature conditioners located outside the processing environments. The substrates are mounted on thermally conductive pedestals for processing in the low-pressure environment. The temperature conditioners are movable both into and out of thermal contact with the pedestals outside the low-pressure environment to regulate transfers of heat through the pedestals between the substrates and the temperature conditioners. A translatable cooler block with a high thermal mass and a large interface area with the pedestal can be used as a temperature conditioner for more rapidly withdrawing heat from the substrate.
摘要翻译：在低压处理环境中，基板的快速热循环是通过位于加工环境之外的可移动温度调节器实现的。基板安装在导热底座上，用于在低压环境中进行加工。温度调节器可以与低压环境之外的基座进行热接触，以便调节通过基板和温度调节器之间的基座的热传递。可以使用具有高热质量和与基座的大的接口面积的可翻转的冷却器块作为用于更快速地从基板排出热量的温度调节器。

10. 发明授权

US5082542A Distributed-array magnetron-plasma processing module and method 失效
标题翻译：分布式阵列磁控管等离子体处理模块及方法
公开(公告)号：US5082542A
公开(公告)日：1992-01-21
申请号：US561851
申请日：1990-08-02
申请人： Mehrdad M. Moslehi , Cecil J. Davis
发明人： Mehrdad M. Moslehi , Cecil J. Davis
IPC分类号： H01J37/32
CPC分类号： H01J37/32623 , H01J37/3266
摘要： A semiconductor wafer plasma processing magnetron module (12) for magnetron-plasma-enhanced processing of semiconductor wafers comprises a base (50) and distributed magnet array (52). The magnet array (52) comprises a plurality of associated magnet unit cells (54). Unit cells (54) associated for producing a periodic magnetic field at the semiconductor wafer (22). The magnetron (12), including the magnetic array (52), mounts to base (50). Unit cells (54) form a repetitive pattern across the surface of magnet array (52). Magnetron module (12) produces a magnetic field possessing periodic uniformity. Unit cells (54) associate to permit expansion of magnet array (52) for any wafer size. A preferred embodiment of the invention includes a hexagonal configuration of magnets (56) and (58) that form unit cells (54).
摘要翻译：用于半导体晶片的磁控管等离子体增强处理的半导体晶片等离子体处理磁控管模块（12）包括基座（50）和分布磁体阵列（52）。磁体阵列（52）包括多个相关联的磁体单元电池（54）。用于在半导体晶片（22）处产生周期性磁场的单元电池（54）。包括磁性阵列（52）的磁控管（12）安装到基座（50）上。单元电池（54）在磁体阵列（52）的表面上形成重复的图案。磁控管模块（12）产生具有周期性均匀性的磁场。单元电池（54）关联以允许用于任何晶片尺寸的磁体阵列（52）的扩展。本发明的优选实施例包括形成单位电池（54）的磁体（56）和（58）的六边形构造。

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