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1. 发明授权

US5435379A Method and apparatus for low-temperature semiconductor processing 失效
标题翻译：低温半导体加工方法和装置
公开(公告)号：US5435379A
公开(公告)日：1995-07-25
申请号：US930074
申请日：1992-08-14
申请人： Mehrdad M. Moslehi , Habib N. Najm , Ajit P. Paranjpe , Cecil J. Davis
发明人： Mehrdad M. Moslehi , Habib N. Najm , Ajit P. Paranjpe , Cecil J. Davis
IPC分类号： H01L21/302 , F04B23/02 , F04B49/24 , H01J37/34 , H01L21/00 , H01L21/3065 , H01L21/683 , F28D15/00
CPC分类号： H01L21/67103 , F04B23/028 , F04B49/24 , H01J37/34 , H01J2237/2001 , H01J2237/32
摘要： A chilling system (12) has a container (20) filled with a coolant (22). A pipe (16) traverses within the container (20) and the coolant (22) to a housing (18). Fluid flows within the pipe (16) and becomes chilled through the pipe (16) upon entering the container (20) and the coolant (22). The chilled fluid enters the housing (18) chilling the housing (18) through the pipe (16). In turn, semiconductor substrate (19) in contact with the housing (18) also is chilled.
摘要翻译：冷却系统（12）具有填充有冷却剂（22）的容器（20）。管道（16）在容器（20）和冷却剂（22）内移动到壳体（18）。流体在管道（16）内流动，并且在进入容器（20）和冷却剂（22）时通过管道（16）变冷。冷冻流体通过管道（16）进入冷却壳体（18）的壳体（18）。反过来，与壳体（18）接触的半导体衬底（19）也被冷却。

2. 发明授权

US06444103B1 Method and apparatus for thin film deposition using an active shutter 失效
标题翻译：使用主动快门进行薄膜沉积的方法和装置
公开(公告)号：US06444103B1
公开(公告)日：2002-09-03
申请号：US09662575
申请日：2000-09-15
申请人： Mehrdad M. Moslehi , Yong Jin Lee , Cecil J. Davis , Ajit P. Paranjpe
发明人： Mehrdad M. Moslehi , Yong Jin Lee , Cecil J. Davis , Ajit P. Paranjpe
IPC分类号： C23C1434
CPC分类号： H01J37/3447 , C23C14/3464 , C23C14/564
摘要： Material is deposited from an active shutter onto a substrate located in a processing chamber housing with a shutter target coupled to a shutter target assembly. A first target assembly located in the housing supports a target for physical-vapor deposition of a first material onto the substrate. A shutter is selectively moveable to extend into a closed or activated position and to retract into an open position. The shutter target assembly is coupled to the shutter such that when the shutter is in the closed position, the shutter target assembly is positioned to allow deposition of material from the shutter target onto the substrate. When the shutter is in the open position, the first target is positioned to deposit material onto the substrate. Alternating layers of materials may be deposited by the shutter target and first target by cycling the shutter between an open position and a closed position.
摘要翻译：材料从活动快门沉积到位于处理室壳体中的基板上，其中快门目标件联接到快门目标组件。位于壳体中的第一目标组件支撑用于将第一材料物理 - 气相沉积到衬底上的靶。快门选择性地可移动以延伸到关闭或启动位置并缩回到打开位置。快门目标组件联接到快门，使得当快门处于关闭位置时，快门目标组件被定位成允许材料从快门目标物体沉积到基板上。当快门处于打开位置时，第一目标定位成将材料沉积到基板上。通过在打开位置和关闭位置之间循环活门，可以通过快门目标和第一目标来沉积材料的交替层。

3. 发明授权

US5217559A Apparatus and method for in-situ deep ultraviolet photon-assisted semiconductor wafer processing 失效
标题翻译：用于原位深紫外光子辅助半导体晶片加工的装置和方法
公开(公告)号：US5217559A
公开(公告)日：1993-06-08
申请号：US625186
申请日：1990-12-10
申请人： Mehrdad M. Moslehi , Ajit P. Paranjpe , Cecil J. Davis
发明人： Mehrdad M. Moslehi , Ajit P. Paranjpe , Cecil J. Davis
IPC分类号： H01L21/302 , H01L21/00 , H01L21/205 , H01L21/268 , H01L21/3065
CPC分类号： H01L21/67115 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/2686
摘要： An in-situ deep-ultraviolet light generation module (126) for photon-assisted processing of semiconductor wafers (44) comprises a process environment space (152) for photochemical processing applications. Process gas injection space (182) receives reactive process gases and injects them into process environment space (152). Plasma fill space (124) receives a plasma (120) and may direct plasma (120) away from or into the process environment space (152) according to the presence or absence of control gas (160) flow. Control gas space (174) and flow/pressure switch space (154) receive control gas (160) to selectively permit deep-ultraviolet photons or plasma to reach process environment space (152) and interact with wafer (44) for photo-enhanced or plasma-enhanced wafer processing.
摘要翻译：用于半导体晶片（44）的光子辅助处理的原位深紫外光发生模块（126）包括用于光化学处理应用的工艺环境空间（152）。工艺气体注入空间（182）接收反应性工艺气体并将其注入工艺环境空间（152）。等离子体填充空间（124）接收等离子体（120）并且可以根据是否存在控制气体（160）流将等离子体（120）引导到过程环境空间（152）或进入过程环境空间（152）。控制气体空间（174）和流量/压力开关空间（154）接收控制气体（160）以选择性地允许深紫外光子或等离子体到达处理环境空间（152）并与晶片（44）相互作用以进行光增强或等离子体增强晶片处理。

4. 发明授权

US06905578B1 Apparatus and method for multi-target physical-vapor deposition of a multi-layer material structure 失效
标题翻译：多层材料结构的多目标物理气相沉积的装置和方法
公开(公告)号：US06905578B1
公开(公告)日：2005-06-14
申请号：US09067143
申请日：1998-04-27
申请人： Mehrdad M. Moslehi , Cecil J. Davis , Christopher J. Mann , Dwain R. Jakubik , Ajit P. Paranjpe
发明人： Mehrdad M. Moslehi , Cecil J. Davis , Christopher J. Mann , Dwain R. Jakubik , Ajit P. Paranjpe
IPC分类号： C23C14/56 , C23C14/34 , C23C16/00
CPC分类号： C23C14/568
摘要： An apparatus and method for depositing plural layers of materials on a substrate within a single vacuum chamber allows high-throughput deposition of structures such as these for GMR and MRAM application. An indexing mechanism aligns a substrate with each of plural targets according to the sequence of the layers in the structure. Each target deposits material using a static physical-vapor deposition technique. A shutter can be interposed between a target and a substrate to block the deposition process for improved deposition control. The shutter can also preclean a target or the substrate and can also be used for mechanical chopping of the deposition process. In alternative embodiments, plural substrates may be aligned sequentially with plural targets to allow simultaneous deposition of plural structures within the single vacuum chamber. A monitoring and control device can be wed to optimize equipment state, process state, and wafer state parameters by sensing each respective state during or after the deposition process.
摘要翻译：用于在单个真空室内的衬底上沉积多层材料的装置和方法允许诸如这些结构的高通量沉积用于GMR和MRAM应用。分度机构根据结构中的层序列将衬底与多个靶中的每一个对准。每个目标使用静态物理气相沉积技术沉积材料。可以在目标和基板之间插入快门以阻止沉积工艺以改善沉积控制。快门还可以预清洁目标物或基底，并且还可用于沉积过程的机械切割。在替代实施例中，多个基板可以与多个靶顺序对准，以允许在单个真空室内同时沉积多个结构。可以通过在沉积过程中或之后感测每个相应的状态来优化设备状态，过程状态和晶片状态参数的监控和控制设备。

5. 发明授权

US5305417A Apparatus and method for determining wafer temperature using pyrometry 失效
标题翻译：使用高温计测定晶片温度的装置和方法
公开(公告)号：US5305417A
公开(公告)日：1994-04-19
申请号：US37771
申请日：1993-03-26
申请人： Habib N. Najm , Mehrdad M. Moslehi , Somnath Banerjee , Lino A. Velo
发明人： Habib N. Najm , Mehrdad M. Moslehi , Somnath Banerjee , Lino A. Velo
IPC分类号： G01J5/10 , C30B25/10 , G01J5/08 , G05D23/19 , G05D23/27 , H01L21/66 , G01J5/06
CPC分类号： B24B37/013 , C30B25/10 , G05D23/27 , H01L22/26 , H01L22/12
摘要： In a RTP reactor where wafer temperature is measured by a pyrometer assembly (32), a pyrometer assembly (50) is further provided to measure the temperature of the quartz window (30) that is situated between the wafer pyrometer assembly (32) and the wafer (16) that is being processed. During the calibration procedure (100, 120) where a thermocouple wafer is used, the measurements from the wafer pyrometer assembly (32) and the window pyrometer assembly (50) are calibrated, and pyrometer measurements and thermocouple measurements are collected and compiled into calibration tables. During actual RTP reactor operation, the data from the calibration tables and current wafer and window pyrometer measurements are used to compute corrected wafer temperature(s). The corrected wafer temperature(s) is/are then used to control the intensities of the heating lamps according to the wafer processing heating schedule.
摘要翻译：在通过高温计组件（32）测量晶片温度的RTP反应器中，还提供高温计组件（50）以测量位于晶片高温计组件（32）和晶片高温计组件（32）之间的石英窗口（30）的温度，正在处理的晶片（16）。在使用热电偶晶片的校准过程（100,120）期间，对来自晶片高温计组件（32）和窗口高温计组件（50）的测量进行校准，并将高温计测量和热电偶测量值收集并编译成校准表。在实际的RTP电抗器操作期间，使用来自校准表和当前晶圆和窗口高温计测量的数据来计算校正的晶片温度。然后使用校正的晶片温度来根据晶片加工时间表来控制加热灯的强度。

6. 发明授权

US5317656A Fiber optic network for multi-point emissivity-compensated semiconductor wafer pyrometry 失效
标题翻译：用于多点发射率补偿半导体晶片高温测量的光纤网络
公开(公告)号：US5317656A
公开(公告)日：1994-05-31
申请号：US17359
申请日：1993-02-11
申请人： Mehrdad M. Moslehi , Habib N. Najm
发明人： Mehrdad M. Moslehi , Habib N. Najm
IPC分类号： G01J5/00 , G02B6/35 , G02B6/02
CPC分类号： G01J5/0003 , G01J5/0007 , G01J5/08 , G01J5/0806 , G01J5/0821 , G01J5/0834 , G01J5/0862 , G01J5/0868 , G01J5/0896 , G01J2005/0051 , G01J5/061
摘要： A fiber-optic network for communicating non-invasive, real-time, in-situ semiconductor wafer radiance and emissivity measurements. The fiber-optic network includes a plurality of optical fibers, a plurality of fiber-optic bundles, and a chopper multiplexer. The fiber-optic bundle provides for the simultaneous transmission and receipt of coherent infrared light energy and radiant heat energy from a semiconductor wafer within a fabrication reactor. The fiber-optic bundles are designed to be sufficiently small to fit within hollow light pipe in a lamp module that directs optical heating energy to the wafer. This substantially eliminates measurement error that the lamp module generates in known measurement devices. Use of optical fibers for transmitting and receiving laser energy and wafer radiance permits precision placement of the fiber-optic bundles to measure multiple temperatures on the semiconductor wafer surface.
摘要翻译：用于通信非侵入式，实时，原位半导体晶片辐射和发射率测量的光纤网络。光纤网络包括多个光纤，多个光纤束和斩波多路复用器。光纤束提供在制造反应器内同时传输和接收来自半导体晶片的相干红外光能量和辐射热能。光纤束被设计为足够小以适合于将光学加热能量引导到晶片的灯模块中的中空光管中。这实质上消除了灯模块在已知测量装置中产生的测量误差。使用光纤传输和接收激光能量和晶片辐射允许光纤束的精确放置以测量半导体晶片表面上的多个温度。

7. 发明授权

US5508934A Multi-point semiconductor wafer fabrication process temperature control system 失效
标题翻译：多点半导体晶圆制造工艺温度控制系统
公开(公告)号：US5508934A
公开(公告)日：1996-04-16
申请号：US237971
申请日：1994-05-04
申请人： Mehrdad M. Moslehi , Habib N. Najm
发明人： Mehrdad M. Moslehi , Habib N. Najm
IPC分类号： G01J5/00 , G01S5/06
CPC分类号： G01J5/0003
摘要： A computer controlled system for real-time control of semiconductor wafer fabrication process uses a multi-point, real-time, non-invasive, in-situ pyrometry-based temperature sensor with emissivity compensation to produce semiconductor wafer reflectance, transmittance, and radiant heat energy measurements. The temperature values that the sensor determines are true temperatures for various points on the wafer. The process control computer stores surface roughness values for the semiconductor wafer being examined. The surface roughness values are produced by surface roughness sensor that makes non-invasive and in-situ measurements. The surface roughness sensor performs roughness measurements of the semiconductor wafer based on coherent reflectance and scatter reflectance of the wafer. Based on surface roughness measurements, the process control computer can use the real-time, in-situ measurements of the multi-point pyrometry-based sensor to obtain real-time measurements of time wafer temperature distribution. By associating a multi-zone lamp module having a real-time controller with the present invention a feedback circuit is provided for real-time precision semiconductor wafer process control.
摘要翻译：用于半导体晶片制造过程的实时控制的计算机控制系统使用具有发射率补偿的多点，实时，非侵入性的基于高温测量的温度传感器来产生半导体晶圆的反射率，透射率和辐射热能量测量。传感器确定的温度值是晶圆上各个点的真实温度。过程控制计算机存储正在检查的半导体晶片的表面粗糙度值。表面粗糙度值由表面粗糙度传感器产生，可进行非侵入性和原位测量。表面粗糙度传感器基于晶片的相干反射率和散射反射率执行半导体晶片的粗糙度测量。基于表面粗糙度测量，过程控制计算机可以使用基于多点高温测量的传感器的实时，原位测量来获得时间晶片温度分布的实时测量。通过将具有实时控制器的多区域灯模块与本发明相关联，提供了用于实时精密半导体晶片工艺控制的反馈电路。

8. 发明授权

US5255286A Multi-point pyrometry with real-time surface emissivity compensation 失效
标题翻译：多点高温测量与实时表面发射率补偿
公开(公告)号：US5255286A
公开(公告)日：1993-10-19
申请号：US911609
申请日：1992-07-10
申请人： Mehrdad M. Moslehi , Habib N. Najm
发明人： Mehrdad M. Moslehi , Habib N. Najm
IPC分类号： G01J5/00 , G01J5/08 , G01J5/10
CPC分类号： G01J5/0003 , G01J5/0007 , G01J5/08 , G01J5/0806 , G01J5/0821 , G01J5/0834 , G01J5/0862 , G01J5/0868 , G01J5/0896 , G01J2005/0051 , G01J5/061
摘要： A multi-point non-invasive, real-time pyrometry-based temperature sensor (200) for simultaneously sensing semiconductor wafer (22) temperature and compensating for wafer emissivity effects. The pyrometer (200) measures the radiant energy that a heated semiconductor wafer (22) emits and coherent beams of light (224) that the semiconductor wafer (22) reflects. As a result, the sensor (200) generates accurate, high-resolution multi-point measurements of semiconductor wafer (22) temperature during a device fabrication process. The pyrometer (200) includes an infrared laser source (202) that directs coherent light beam (203) into beam splitter (204). From the beam splitter (204), the coherent light beam (203) is split into numerous incident coherent beams (210). Beams (210) travel via optical fiber bundles (218) to the surface of semiconductor wafer (22) within the fabrication reactor (80). Each optical fiber bundle (218) collects reflected coherent light beam and radiant energy from wafer (22). Reflected coherent light beam (226) and radiant energy (222) is directed to a detector (240) for detecting signals and recording radiance, emissivity, and temperature values. Multiple optical fiber bundles (218) may be used in the sensor (200) for high spatial resolution multi-point measurements of wafer (22) temperature for precision real-time process control and uniformity optimizations.
摘要翻译：一种用于同时感测半导体晶片（22）温度并补偿晶片辐射效应的多点非侵入式实时基于高温测量的温度传感器（200）。高温计（200）测量加热的半导体晶片（22）发射的辐射能量和半导体晶片（22）反射的相干的光束（224）。结果，传感器（200）在器件制造过程中产生半导体晶片（22）温度的准确的高分辨率多点测量。高温计（200）包括将相干光束（203）引导到分束器（204）中的红外激光源（202）。从分束器（204），相干光束（203）被分成许多入射相干光束（210）。光束（210）通过光纤束（218）行进到制造反应器（80）内的半导体晶片（22）的表面。每个光纤束（218）从晶片（22）收集反射的相干光束和辐射能。反射相干光束（226）和辐射能（222）被引导到用于检测信号和记录辐射度，发射率和温度值的检测器（240）。可以在传感器（200）中使用多个光纤束（218），用于晶片（22）温度的高空间分辨率多点测量，用于精确实时过程控制和均匀性优化。

9. 发明授权

US5156461A Multi-point pyrometry with real-time surface emissivity compensation 失效
标题翻译：多点高温测量与实时表面发射率补偿
公开(公告)号：US5156461A
公开(公告)日：1992-10-20
申请号：US702646
申请日：1991-05-17
申请人： Mehrdad M. Moslehi , Habib N. Najm
发明人： Mehrdad M. Moslehi , Habib N. Najm
IPC分类号： G01J5/00 , G01J5/08
CPC分类号： G01J5/0003 , G01J5/00 , G01J5/0007 , G01J5/08 , G01J5/0806 , G01J5/0821 , G01J5/0834 , G01J5/0862 , G01J5/0868 , G01J5/0896 , G01J2005/0051 , G01J2005/0074 , G01J5/061
摘要： A multi-point non-invasive, real-time pyrometry-based temperature sensor (200) for simultaneously sensing semiconductor wafer (22) temperature and compensating for wafer emissivity effects. The pyrometer (200) measures the radiant energy that a heated semiconductor wafer (22) emits and coherent beams of light (224) that the semiconductor wafer (22) reflects. As a result, the sensor (200) generates accurate, high-resolution multi-point measurements of semiconductor wafer (22) temperature during a device fabrication process. The pyrometer (200) includes an infrared laser source (202) that directs coherent light beam (203) into beam splitter (204). From the beam splitter (204), the coherent light beam (203) is split into numerous incident coherent beams (210). Beams (210) travel via optical fiber bundles (218) to the surface of semiconductor wafer (22) within the fabrication reactor (80). Each optical fiber bundle (218) collects reflected coherent light beam and radiant energy from wafer (22). Reflected coherent light beam (226) and radiant energy (222) is directed to a detector (240) for detecting signals and recording radiance, emissivity, and temperature values. Multiple optical fiber bundles (218) may be used in the sensor (200) for high spatial resolution multi-point measurements of wafer (22) temperature for precision real-time process control and uniformity optimizations.
摘要翻译：一种用于同时感测半导体晶片（22）温度并补偿晶片辐射效应的多点非侵入式实时基于高温测量的温度传感器（200）。高温计（200）测量加热的半导体晶片（22）发射的辐射能量和半导体晶片（22）反射的相干的光束（224）。结果，传感器（200）在器件制造过程中产生半导体晶片（22）温度的准确的高分辨率多点测量。高温计（200）包括将相干光束（203）引导到分束器（204）中的红外激光源（202）。从分束器（204），相干光束（203）被分成许多入射相干光束（210）。光束（210）通过光纤束（218）行进到制造反应器（80）内的半导体晶片（22）的表面。每个光纤束（218）从晶片（22）收集反射的相干光束和辐射能。反射相干光束（226）和辐射能（222）被引导到用于检测信号和记录辐射度，发射率和温度值的检测器（240）。可以在传感器（200）中使用多个光纤束（218），用于晶片（22）温度的高空间分辨率多点测量，用于精确实时过程控制和均匀性优化。

10. 发明授权

US06645847B2 Microelectronic interconnect material with adhesion promotion layer and fabrication method 失效
公开(公告)号：US06645847B2
公开(公告)日：2003-11-11
申请号：US10060548
申请日：2002-01-30
申请人： Ajit P. Paranjpe , Mehrdad M. Moslehi , Boris Relja , Randhir S. Bubber , Lino A. Velo , Thomas R. Omstead , David R. Campbell, Sr. , David M. Leet , Sanjay Gopinath
发明人： Ajit P. Paranjpe , Mehrdad M. Moslehi , Boris Relja , Randhir S. Bubber , Lino A. Velo , Thomas R. Omstead , David R. Campbell, Sr. , David M. Leet , Sanjay Gopinath
IPC分类号： H01L214763
CPC分类号： H01L21/76846 , H01L21/2855 , H01L21/28556 , H01L21/28568 , H01L21/76843 , H01L21/76856 , H01L21/76876 , H01L21/76877 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A microelectronic semiconductor interconnect structure barrier and method of deposition provide improved conductive barrier material properties for high-performance device interconnects. The barrier includes a refractory metal such as cobalt, cobalt-based alloys, ruthenium or ruthenium-based alloys for promoting adhesion of copper. The barrier materials can be deposited by chemical-vapor deposition to achieve good step coverage and a relatively conformal thin film with a good nucleation surface for subsequent metallization such as copper metallization. In one embodiment, the barrier suppresses diffusion of copper into other layers of the device, including the inter-metal dielectric, pre-metal dielectric, and transistor structures.

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