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1. 发明授权

US06472088B2 Composite and manufacturing method therefor 失效
公开(公告)号：US06472088B2
公开(公告)日：2002-10-29
申请号：US09940409
申请日：2001-08-27
申请人： Masatoshi Nakamura , Yoshinori Hatanaka
发明人： Masatoshi Nakamura , Yoshinori Hatanaka
IPC分类号： B32B1800
CPC分类号： C23C16/509 , B32B15/04 , C03C17/256 , C03C2217/212 , C03C2218/113 , C23C16/405 , C23C16/452 , Y10T428/31504 , Y10T428/31725
摘要： This invention provides a composite having a hydrophilic film made of amorphous titanium oxide. A film is deposited on a substrate made of, for example, glass or synthetic resin. The film is composed of amorphous titanium oxide partially having structures in which a network of Ti—O—Ti bond is broken to give Ti—OH bond terminals.

2. 发明授权

US06692794B2 Composite and manufacturing method therefor 失效
标题翻译：复合制造方法
公开(公告)号：US06692794B2
公开(公告)日：2004-02-17
申请号：US10217113
申请日：2002-08-12
申请人： Masatoshi Nakamura , Yoshinori Hatanaka
发明人： Masatoshi Nakamura , Yoshinori Hatanaka
IPC分类号： H05H124
CPC分类号： C23C16/509 , B32B15/04 , C03C17/256 , C03C2217/212 , C03C2218/113 , C23C16/405 , C23C16/452 , Y10T428/31504 , Y10T428/31725
摘要： This invention provides a composite having a hydrophilic film made of amorphous titanium oxide. A film is deposited on a substrate made of, for example, glass or synthetic resin. The film is composed of amorphous titanium oxide partially having structures in which a network of Ti—O—Ti bond is broken to give Ti—OH bond terminals.
摘要翻译：本发明提供一种具有由无定形氧化钛制成的亲水膜的复合体。将膜沉积在由例如玻璃或合成树脂制成的基板上。该膜由部分具有Ti-O-Ti键网络断裂以得到Ti-OH键末端的结构的无定形氧化钛组成。

3. 发明授权

US08044476B2 Wide range radiation detector and manufacturing method 有权
标题翻译：宽范围辐射探测器及制造方法
公开(公告)号：US08044476B2
公开(公告)日：2011-10-25
申请号：US11454522
申请日：2006-06-16
申请人： Yoshinori Hatanaka , Toru Aoki
发明人： Yoshinori Hatanaka , Toru Aoki
IPC分类号： H01L31/00
CPC分类号： H01L31/115 , H01L27/14661 , H01L27/14696
摘要： A radiation detector comprising a II-VI compound semiconductor substrate that absorbs radiation having a first energy, a II-VI compound semiconductor layer of a first conductivity type provided on a main surface of the II-VI compound semiconductor substrate, a metal layer containing at least one of a group III element and a group V element provided on the II-VI compound semiconductor layer, a IV semiconductor layer having a second conductivity type opposite to the first conductivity type provided on the metal layer, and a IV semiconductor substrate that absorbs radiation having a second energy different from the first energy provided on the IV semiconductor layer.
摘要翻译：一种辐射检测器，包括吸收具有第一能量的辐射的II-VI化合物半导体衬底，设置在II-VI化合物半导体衬底的主表面上的第一导电类型的II-VI化合物半导体层，提供在II-VI化合物半导体层上的III族元素和V族元素中的至少一种，具有与金属层上提供的第一导电类型相反的第二导电类型的IV半导体层和吸收具有与在IV半导体层上提供的第一能量不同的第二能量的辐射。

4. 发明申请

US20070176200A1 Wide range radiation detector and manufacturing method 有权
标题翻译：宽范围辐射探测器及制造方法
公开(公告)号：US20070176200A1
公开(公告)日：2007-08-02
申请号：US11454522
申请日：2006-06-16
申请人： Yoshinori Hatanaka , Toru Aoki
发明人： Yoshinori Hatanaka , Toru Aoki
IPC分类号： H01L31/00 , H01L29/732
CPC分类号： H01L31/115 , H01L27/14661 , H01L27/14696
摘要： There is disclosed a radiation detector comprising a II-VI compound semiconductor substrate that absorbs radiation having a first energy, a II-VI compound semiconductor layer of a first conductivity type provided on a main surface of the II-VI compound semiconductor substrate, a metal layer containing at least one of a group III element and a group V element provided on the II-VI compound semiconductor layer, a IV semiconductor layer having a second conductivity type opposite to the first conductivity type provided on the metal layer, and a IV semiconductor substrate that absorbs radiation having a second energy different to the first energy provided on the IV semiconductor layer.
摘要翻译：公开了一种辐射检测器，其包括吸收具有第一能量的辐射的II-VI化合物半导体衬底，设置在II-VI化合物半导体衬底的主表面上的第一导电类型的II-VI化合物半导体层，金属含有设置在II-VI化合物半导体层上的III族元素和V族元素中的至少一种的层，具有与设置在金属层上的第一导电类型相反的第二导电类型的IV半导体层和IV半导体吸收具有与IV半导体层上提供的第一能量不同的第二能量的辐射的衬底。

5. 发明申请

US20070057190A1 Ultra-high resolution pixel electrode arrangement structure signal processing method 失效
标题翻译：超高分辨率像素电极排列结构信号处理方法
公开(公告)号：US20070057190A1
公开(公告)日：2007-03-15
申请号：US10576413
申请日：2004-10-20
申请人： Yoshinori Hatanaka , Toru Aoki , Yasuhiro Tomita
发明人： Yoshinori Hatanaka , Toru Aoki , Yasuhiro Tomita
IPC分类号： G01T1/24 , H01L27/146 , H01L25/00
CPC分类号： H04N5/349 , H04N5/32 , H04N5/3651
摘要： When a semiconductor sensor element used for detecting high-energy x-rays and gamma rays and an amplifier are connected via wires, the capacitances vary depending on the wires, thereby causing a sensitivity variation. To solve this, a structure for making the capacitances uniform is proposed. If a staggered arrangement is used for high resolution, the capacitances by wiring are different from element to element, so dummy sensor mounting sections (2) are provided to electrode sections (3) to make the capacitance uniform. The width of the connection section is decreased depending on the wiring length so as to make the capacitance uniform.
摘要翻译：当用于检测高能X射线和γ射线的半导体传感器元件和放大器通过导线连接时，电容根据导线而变化，从而导致灵敏度变化。为了解决这个问题，提出了一种使电容均匀化的结构。如果以高分辨率使用交错布置，则通过布线的电容与元件不同，因此将虚拟传感器安装部分（2）设置到电极部分（3）以使电容均匀。连接部分的宽度根据布线长度而减小，从而使电容均匀。

6. 发明授权

US06456639B2 Semiconductor light emitting device with II-VI group semiconductor contact layer containing alkali metal impurity, method of producing the same, and optical device including same 失效
标题翻译：具有含有碱金属杂质的II-VI族半导体接触层的半导体发光器件及其制造方法以及包括其的光学器件
公开(公告)号：US06456639B2
公开(公告)日：2002-09-24
申请号：US09864758
申请日：2001-05-24
申请人： Akira Ishibashi , Yoshinori Hatanaka , Toru Aoki , Masaharu Nagai
发明人： Akira Ishibashi , Yoshinori Hatanaka , Toru Aoki , Masaharu Nagai
IPC分类号： H01S500
CPC分类号： H01L33/40 , H01L33/28 , H01L33/285
摘要： The invention provides a semiconductor light emitting device whose operating voltage can be easily reduced, a method of producing the same, and an optical device. An n-type clad layer, a first guide layer, an active layer, a second guide layer, a p-type clad layer, a first semiconductor layer, and a second semiconductor layer of ZnSe are successively grown on an n-type substrate. An alkali compound layer of Na2Se is then formed thereon. Subsequently, a heat treatment is performed by means of irradiation of an excimer laser beam so that at least a part of the second semiconductor layer and at least a part of the alkali compound layer are altered thereby forming a contact layer. Furthermore, a p-side electrode is formed on the contact layer. The contact layer contains an alkali metal serving as a p-type impurity so that the contact layer has a low electric resistance thereby achieving a reduction in the operating voltage and thus a reduction in the operating power. As a result of the reduction in the operating power, the device life is improved.
摘要翻译：本发明提供一种可以容易地降低其工作电压的半导体发光器件，其制造方法和光学器件。在n型衬底上依次生长n型覆盖层，第一引导层，有源层，第二引导层，p型覆盖层，第一半导体层和第二半导体层。然后在其上形成Na 2 Se的碱性化合物层。随后，通过照射准分子激光束进行热处理，使得第二半导体层和至少一部分碱性化合物层的至少一部分被改变，从而形成接触层。此外，在接触层上形成p侧电极。接触层含有用作p型杂质的碱金属，使得接触层具有低电阻，从而实现工作电压的降低，从而降低工作电力。由于操作功率的降低，设备寿命得到改善。

7. 发明授权

US5962083A Methods of depositing films on polymer substrates 失效
标题翻译：在聚合物基材上沉积膜的方法
公开(公告)号：US5962083A
公开(公告)日：1999-10-05
申请号：US664959
申请日：1996-06-13
申请人： Yoshinori Hatanaka , Yoichiro Nakanishi , Sunil Wickramanayaka , Keiichiro Sano , Masaya Nomura , Shigekazu Hayashi
发明人： Yoshinori Hatanaka , Yoichiro Nakanishi , Sunil Wickramanayaka , Keiichiro Sano , Masaya Nomura , Shigekazu Hayashi
IPC分类号： C08J7/00 , C08J7/06 , C08J7/18 , C23C16/40 , C23C16/511 , H01J37/32 , H05H1/18
CPC分类号： H01J37/32192 , C23C16/402 , C23C16/511 , H01J37/32678
摘要： A method of depositing a thin film on a polymer substrate by plasma CVD comprises applying a magnetic field to a plasma generating chamber by activating a magnetic coil placed in the circumference of the plasma generating chamber, the plasma generating chamber having an inlet; introducing a microwave into the plasma generating chamber; introducing an upstream gas into the plasma generating chamber wherein an ECR plasma is generated; vaporizing a feed gas wherein a supply gas is generated and carries the ECR plasma; passing said ECR plasma through a mesh provided between the inlet and a polymer substrate located downstream of the inlet; and depositing a film on the surface of the polymer substrate.
摘要翻译：通过等离子体CVD在聚合物基板上沉积薄膜的方法包括通过激活置于等离子体发生室周围的电磁线圈将等离子体产生室施加磁场，等离子体产生室具有入口; 将微波引入等离子体发生室; 将上游气体引入等离子体发生室，其中产生ECR等离子体; 蒸发进料气体，其中产生供应气体并携带ECR等离子体; 使所述ECR等离子体通过提供在入口和位于入口下游的聚合物基底之间的网格; 以及在所述聚合物基材的表面上沉积膜。

8. 发明授权

US5587627A Planar display apparatus having exposed insulated substrate portion 失效
标题翻译：具有露出的绝缘基板部分的平面显示装置
公开(公告)号：US5587627A
公开(公告)日：1996-12-24
申请号：US395703
申请日：1995-02-28
申请人： Masato Saito , Ryo Suzuki , Keiji Fukuyama , Takuya Ohira , Keiji Watanabe , Minoru Kobayashi , Susumu Hoshinouchi , Yoshinori Hatanaka
发明人： Masato Saito , Ryo Suzuki , Keiji Fukuyama , Takuya Ohira , Keiji Watanabe , Minoru Kobayashi , Susumu Hoshinouchi , Yoshinori Hatanaka
IPC分类号： H01J31/12 , H05B37/02
CPC分类号： H01J31/126
摘要： A control electrode portion for passing electrons through a given electron-passing hole selected from a plurality of electron-passing holes provided on an insulating substrate is formed by coating the insulating substrate with a conductive film and dividing the into a plurality of conductive films as control electrodes. This structure obviates the mesh structure of electrons which are necessary in the case of arranging control electrodes on the insulating substrate, thereby realizing high-definition display devices with improved luminance. In addition, planar display devices provided with a surface insulated substrate produced by forming an insulating film on a conductive substrate having electron-passing holes and a plurality of separate control electrodes arranged on the surface insulated substrate, it is possible to prevent the charge-up effect which obstructs the passage of electron beams and, hence, to enhance the luminance at least by (1) providing a voltage applying circuit for applying a predetermined voltage to the conductive substrate, (2) providing a portion at which the conductive substrate is exposed between the adjacent control electrodes.
摘要翻译：通过用导电膜涂覆绝缘基板并将其分成多个导电膜作为对照，形成用于使电子通过选自设置在绝缘基板上的多个电子通过孔中的给定电子通过孔的控制电极部分电极。这种结构消除了在绝缘基板上布置控制电极的情况下必需的电子的网格结构，从而实现了具有改善的亮度的高清晰度显示装置。另外，具有通过在具有电子通过孔的导电性基板上形成绝缘膜而形成的表面绝缘基板的平面显示装置和配置在表面绝缘基板上的多个分立控制电极，能够防止充电至少通过（1）提供用于向导电衬底施加预定电压的电压施加电路，（2）提供导电衬底露出的部分，从而阻止电子束通过，并因此提高亮度在相邻的控制电极之间。

9. 发明授权

US07402811B2 Ultra-high resolution pixel electrode arrangement structure and signal processing method 失效
标题翻译：超高分辨率像素电极排列结构和信号处理方法
公开(公告)号：US07402811B2
公开(公告)日：2008-07-22
申请号：US10576413
申请日：2004-10-20
申请人： Yoshinori Hatanaka , Toru Aoki , Yasuhiro Tomita
发明人： Yoshinori Hatanaka , Toru Aoki , Yasuhiro Tomita
IPC分类号： G01T1/24
CPC分类号： H04N5/349 , H04N5/32 , H04N5/3651
摘要： When a semiconductor sensor element used for detecting high-energy x-rays and gamma rays and an amplifier are connected via wires, the capacitances vary depending on the wires, thereby causing a sensitivity variation. To solve this, a structure for making the capacitances uniform is proposed.If a staggered arrangement is used for high resolution, the capacitances by wiring are different from element to element, so dummy sensor mounting sections (2) are provided to electrode sections (3) to make the capacitance uniform. The width of the connection section is decreased depending on the wiring length so as to make the capacitance uniform.
摘要翻译：当用于检测高能X射线和γ射线的半导体传感器元件和放大器通过导线连接时，电容根据导线而变化，从而导致灵敏度变化。为了解决这个问题，提出了一种使电容均匀化的结构。如果以高分辨率使用交错布置，则通过布线的电容与元件不同，因此将虚拟传感器安装部分（2）设置到电极部分（3）以使电容均匀。连接部分的宽度根据布线长度而减小，从而使电容均匀。

10. 发明授权

US07256738B2 Resonant circuits 有权
标题翻译：谐振电路
公开(公告)号：US07256738B2
公开(公告)日：2007-08-14
申请号：US10636720
申请日：2003-08-07
申请人： Shinya Uchibori , Takaaki Mizukawa , Yoshinori Hatanaka
发明人： Shinya Uchibori , Takaaki Mizukawa , Yoshinori Hatanaka
IPC分类号： H01Q1/38
CPC分类号： G08B13/242 , B32B2425/00 , B32B2519/02 , G06K19/07718 , G06K19/07749 , G08B13/2431 , G08B13/2437 , G08B13/244 , H01F5/003 , H01F41/041 , H05K3/041 , Y10S428/901 , Y10T29/49002 , Y10T29/49016 , Y10T29/49018 , Y10T29/49073 , Y10T29/4913 , Y10T29/49155 , Y10T29/532 , Y10T428/24917 , Y10T428/2817 , Y10T428/31681
摘要： A resonant circuit having a circuit coil formed on each surface of a dielectric film. Each coil has a line-width and an outer periphery in which the line-width of each circuit is 1/50 or more of the length of the outermost periphery of that circuit. Each coil has at least three complete turns, and the coils are provided on the faces of a dielectric film in such a manner that the coils are faced to each other.
摘要翻译：一种在电介质膜的每个表面上形成有电路线圈的谐振电路。每个线圈具有线宽度和外周边，其中每个电路的线宽度是该电路的最外周长度的1/50以上。每个线圈具有至少三个完整的匝数，并且线圈以这样的方式设置在电介质膜的表面上，使得线圈彼此面对。

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