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    • 3. 发明授权
    • Wide range radiation detector and manufacturing method
    • 宽范围辐射探测器及制造方法
    • US08044476B2
    • 2011-10-25
    • US11454522
    • 2006-06-16
    • Yoshinori HatanakaToru Aoki
    • Yoshinori HatanakaToru Aoki
    • H01L31/00
    • H01L31/115H01L27/14661H01L27/14696
    • A radiation detector comprising a II-VI compound semiconductor substrate that absorbs radiation having a first energy, a II-VI compound semiconductor layer of a first conductivity type provided on a main surface of the II-VI compound semiconductor substrate, a metal layer containing at least one of a group III element and a group V element provided on the II-VI compound semiconductor layer, a IV semiconductor layer having a second conductivity type opposite to the first conductivity type provided on the metal layer, and a IV semiconductor substrate that absorbs radiation having a second energy different from the first energy provided on the IV semiconductor layer.
    • 一种辐射检测器,包括吸收具有第一能量的辐射的II-VI化合物半导体衬底,设置在II-VI化合物半导体衬底的主表面上的第一导电类型的II-VI化合物半导体层, 提供在II-VI化合物半导体层上的III族元素和V族元素中的至少一种,具有与金属层上提供的第一导电类型相反的第二导电类型的IV半导体层和吸收 具有与在IV半导体层上提供的第一能量不同的第二能量的辐射。
    • 4. 发明申请
    • Wide range radiation detector and manufacturing method
    • 宽范围辐射探测器及制造方法
    • US20070176200A1
    • 2007-08-02
    • US11454522
    • 2006-06-16
    • Yoshinori HatanakaToru Aoki
    • Yoshinori HatanakaToru Aoki
    • H01L31/00H01L29/732
    • H01L31/115H01L27/14661H01L27/14696
    • There is disclosed a radiation detector comprising a II-VI compound semiconductor substrate that absorbs radiation having a first energy, a II-VI compound semiconductor layer of a first conductivity type provided on a main surface of the II-VI compound semiconductor substrate, a metal layer containing at least one of a group III element and a group V element provided on the II-VI compound semiconductor layer, a IV semiconductor layer having a second conductivity type opposite to the first conductivity type provided on the metal layer, and a IV semiconductor substrate that absorbs radiation having a second energy different to the first energy provided on the IV semiconductor layer.
    • 公开了一种辐射检测器,其包括吸收具有第一能量的辐射的II-VI化合物半导体衬底,设置在II-VI化合物半导体衬底的主表面上的第一导电类型的II-VI化合物半导体层,金属 含有设置在II-VI化合物半导体层上的III族元素和V族元素中的至少一种的层,具有与设置在金属层上的第一导电类型相反的第二导电类型的IV半导体层和IV半导体 吸收具有与IV半导体层上提供的第一能量不同的第二能量的辐射的衬底。
    • 6. 发明授权
    • Semiconductor light emitting device with II-VI group semiconductor contact layer containing alkali metal impurity, method of producing the same, and optical device including same
    • 具有含有碱金属杂质的II-VI族半导体接触层的半导体发光器件及其制造方法以及包括其的光学器件
    • US06456639B2
    • 2002-09-24
    • US09864758
    • 2001-05-24
    • Akira IshibashiYoshinori HatanakaToru AokiMasaharu Nagai
    • Akira IshibashiYoshinori HatanakaToru AokiMasaharu Nagai
    • H01S500
    • H01L33/40H01L33/28H01L33/285
    • The invention provides a semiconductor light emitting device whose operating voltage can be easily reduced, a method of producing the same, and an optical device. An n-type clad layer, a first guide layer, an active layer, a second guide layer, a p-type clad layer, a first semiconductor layer, and a second semiconductor layer of ZnSe are successively grown on an n-type substrate. An alkali compound layer of Na2Se is then formed thereon. Subsequently, a heat treatment is performed by means of irradiation of an excimer laser beam so that at least a part of the second semiconductor layer and at least a part of the alkali compound layer are altered thereby forming a contact layer. Furthermore, a p-side electrode is formed on the contact layer. The contact layer contains an alkali metal serving as a p-type impurity so that the contact layer has a low electric resistance thereby achieving a reduction in the operating voltage and thus a reduction in the operating power. As a result of the reduction in the operating power, the device life is improved.
    • 本发明提供一种可以容易地降低其工作电压的半导体发光器件,其制造方法和光学器件。 在n型衬底上依次生长n型覆盖层,第一引导层,有源层,第二引导层,p型覆盖层,第一半导体层和第二半导体层。 然后在其上形成Na 2 Se的碱性化合物层。 随后,通过照射准分子激光束进行热处理,使得第二半导体层和至少一部分碱性化合物层的至少一部分被改变,从而形成接触层。 此外,在接触层上形成p侧电极。 接触层含有用作p型杂质的碱金属,使得接触层具有低电阻,从而实现工作电压的降低,从而降低工作电力。 由于操作功率的降低,设备寿命得到改善。
    • 8. 发明授权
    • Planar display apparatus having exposed insulated substrate portion
    • 具有露出的绝缘基板部分的平面显示装置
    • US5587627A
    • 1996-12-24
    • US395703
    • 1995-02-28
    • Masato SaitoRyo SuzukiKeiji FukuyamaTakuya OhiraKeiji WatanabeMinoru KobayashiSusumu HoshinouchiYoshinori Hatanaka
    • Masato SaitoRyo SuzukiKeiji FukuyamaTakuya OhiraKeiji WatanabeMinoru KobayashiSusumu HoshinouchiYoshinori Hatanaka
    • H01J31/12H05B37/02
    • H01J31/126
    • A control electrode portion for passing electrons through a given electron-passing hole selected from a plurality of electron-passing holes provided on an insulating substrate is formed by coating the insulating substrate with a conductive film and dividing the into a plurality of conductive films as control electrodes. This structure obviates the mesh structure of electrons which are necessary in the case of arranging control electrodes on the insulating substrate, thereby realizing high-definition display devices with improved luminance. In addition, planar display devices provided with a surface insulated substrate produced by forming an insulating film on a conductive substrate having electron-passing holes and a plurality of separate control electrodes arranged on the surface insulated substrate, it is possible to prevent the charge-up effect which obstructs the passage of electron beams and, hence, to enhance the luminance at least by (1) providing a voltage applying circuit for applying a predetermined voltage to the conductive substrate, (2) providing a portion at which the conductive substrate is exposed between the adjacent control electrodes.
    • 通过用导电膜涂覆绝缘基板并将其分成多个导电膜作为对照,形成用于使电子通过选自设置在绝缘基板上的多个电子通过孔中的给定电子通过孔的控制电极部分 电极。 这种结构消除了在绝缘基板上布置控制电极的情况下必需的电子的网格结构,从而实现了具有改善的亮度的高清晰度显示装置。 另外,具有通过在具有电子通过孔的导电性基板上形成绝缘膜而形成的表面绝缘基板的平面显示装置和配置在表面绝缘基板上的多个分立控制电极,能够防止充电 至少通过(1)提供用于向导电衬底施加预定电压的电压施加电路,(2)提供导电衬底露出的部分,从而阻止电子束通过,并因此提高亮度 在相邻的控制电极之间。