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    • 2. 发明授权
    • Method and apparatus for forming SiC thin film on high polymer base material by plasma CVD
    • 通过等离子体CVD在高聚物基材上形成SiC薄膜的方法和装置
    • US06372304B1
    • 2002-04-16
    • US08888954
    • 1997-07-07
    • Keiichiro SanoMasaya NomuraHiroaki TamamakiYoshinori Hatanaka
    • Keiichiro SanoMasaya NomuraHiroaki TamamakiYoshinori Hatanaka
    • C23C1632
    • C23C16/325C23C16/511
    • A high quality transparent SiC thin film can be deposited on the surface of a plastic material at low temperature utilizing Electron Cyclotron Resonance (ECR) Plasma CVD techniques, thereby enhancing surfacial hardness without spoiling designability. A magnetic field is applied to a plasma generating chamber by means of a surrounding magnetic coil. Microwaves are then introduced into the plasma generating chamber. Further, an upstream gas is introduced into the plasma generating chamber. ECR plasma is thus generated. A downstream gas is then supplied to the chamber from an inlet. Furthermore, the ECR plasma is passed through a mesh placed between the inlet and a polymer base material or between the plasma generating chamber and the inlet. Accordingly, a SiC film is deposited on a surface of a polymer base material.
    • 使用电子回旋共振(ECR)等离子体CVD技术,可以在低温下在塑料材料的表面上沉积高质量的透明SiC薄膜,从而提高表面硬度,而不破坏可设计性。 通过周围的电磁线圈将磁场施加到等离子体发生室。 然后将微波引入等离子体发生室。 此外,上游气体被引入到等离子体产生室中。 从而产生ECR等离子体。 然后从入口将下游气体供应到室。 此外,ECR等离子体通过放置在入口和聚合物基材之间或者等离子体产生室和入口之间的网。 因此,在聚合物基材的表面上沉积SiC膜。