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1. 发明授权

US07041529B2 Light-emitting device and method of fabricating the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US07041529B2
公开(公告)日：2006-05-09
申请号：US10690453
申请日：2003-10-22
申请人： Masato Yamada , Jun-ya Ishizaki , Nobuhiko Noto , Kazunori Hagimoto , Shinji Nozaki , Kazuo Uchida , Hiroshi Morisaki
发明人： Masato Yamada , Jun-ya Ishizaki , Nobuhiko Noto , Kazunori Hagimoto , Shinji Nozaki , Kazuo Uchida , Hiroshi Morisaki
IPC分类号： H01L21/00 , H01L21/30
CPC分类号： H01L33/42 , H01L33/0079 , H01L33/10 , H01L33/145 , H01L33/387 , H01L33/405 , H01L2933/0016
摘要： In a light-emitting device, a light-emitting layer portion composed of a compound semiconductor is bonded on one main surface of a transparent conductive semiconductor substrate while placing a substrate-bonding conductive oxide layer composed of a conductive oxide in between. Between the light-emitting layer portion and the substrate-bonding conductive oxide layer, a contact layer for reducing junction resistance with the substrate-bonding conductive oxide layer so as to contact with the substrate-bonding conductive oxide layer. This is successful in providing the light-emitting device which is producible at low costs, has a low series resistance, and can attain a sufficient emission efficiency despite it has a thick current-spreading layer.
摘要翻译：在发光装置中，将由化合物半导体构成的发光层部分接合在透明导电半导体衬底的一个主表面上，同时将由导电氧化物构成的衬底接合导电氧化物层放置在其间。在发光层部分和与衬底结合的导电氧化物层之间，具有用于与衬底结合导电氧化物层降低结电阻以与衬底结合导电氧化物层接触的接触层。这是成功地提供了可以低成本生产的低发光装置，具有低串联电阻，并且尽管具有厚的电流扩展层，但是可以获得足够的发光效率。

2. 发明授权

US06847056B2 Light emitting device 失效
标题翻译：发光装置
公开(公告)号：US06847056B2
公开(公告)日：2005-01-25
申请号：US10240101
申请日：2002-01-29
申请人： Nobuhiko Noto , Masato Yamada , Masahisa Endo , Hitoshi Ikeda , Shinji Nozaki , Kazuo Uchida , Hiroshi Morisaki
发明人： Nobuhiko Noto , Masato Yamada , Masahisa Endo , Hitoshi Ikeda , Shinji Nozaki , Kazuo Uchida , Hiroshi Morisaki
IPC分类号： H01L33/32 , H01L33/42 , H01L33/00
CPC分类号： H01L33/42 , H01L33/0079
摘要： A light emitting device 100 has a structure in which a p type InGaAs layer 7 as an electrode contact layer and an ITO electrode layer 8 as an oxide transparent electrode layer are formed in the order in a first major surface 17 side of a light emitting layer section 24. In a second major surface 18 side of the light emitting layer section 24, an n type InGaAs layer 9 as an electrode contact layer and an ITO electrode layer 10 as an oxide transparent electrode layer are formed in the order. The ITO electrode layers 8 and 10 together with the p type InGaAs layer 7 and the n type InGaAs layer 9 are formed on the respective both major surfaces 17 and 18 of the light emitting layer section 24 so as to cover the respective both major surfaces 17 and 18 in the entirety thereof.
摘要翻译：发光器件100具有以下结构：作为电极接触层的ap型InGaAs层7和作为氧化物透明电极层的ITO电极层8按照发光层部分的第一主表面17侧的顺序形成在发光层部分24的第二主表面18侧，依次形成作为电极接触层的n型InGaAs层9和作为氧化物透明电极层的ITO电极层10。在发光层部分24的两个主表面17和18上形成ITO电极层8和10以及p型InGaAs层7和n型InGaAs层9，以覆盖相应的两个主表面17 全部为18。

3. 发明授权

US07553685B2 Method of fabricating light-emitting device and light-emitting device 有权
标题翻译：制造发光器件和发光器件的方法
公开(公告)号：US07553685B2
公开(公告)日：2009-06-30
申请号：US10523636
申请日：2003-08-06
申请人： Nobuhiko Noto , Masato Yamada , Shinji Nozaki , Kazuo Uchida , Hiroshi Morisaki
发明人： Nobuhiko Noto , Masato Yamada , Shinji Nozaki , Kazuo Uchida , Hiroshi Morisaki
IPC分类号： H01L21/00
CPC分类号： H01L33/42 , H01L33/30
摘要： A light-emitting device 100 has ITO transparent electrode layers 8, 10 used for applying drive voltage for light-emission to a light-emitting layer section 24, and is designed so as to extract light from the light-emitting layer section 24 through the ITO transparent electrode layers 8, 10. The light-emitting device 100 also has contact layers composed of In-containing GaAs, formed between the light-emitting layer section 24 and the ITO transparent electrode layers 8, 10, so as to contact with the ITO transparent electrode layers respectively. The contact layers 7, 9 are formed by annealing a stack 13 obtained by forming GaAs layers 7′, 9′ on the light-emitting layer section, and by forming the ITO transparent electrode layers 8, 10 so as to contact with the GaAs layers 7′, 9′, to thereby allow In to diffuse from the ITO transparent electrode layers 8, 10 into the GaAs layers 7′, 9′. This provides a method of fabricating a light-emitting device, in which the ITO transparent electrode layers as the light-emission drive electrodes are bonded as being underlain by the contact layers, to thereby reduce contact resistance of these electrodes, and to thereby make the contact layers less susceptible to difference in the lattice constants with those of the light-emitting layer section during the formation thereof.
摘要翻译：发光装置100具有用于向发光层部分24施加用于发光的驱动电压的ITO透明电极层8,10，并且被设计成从发光层部分24通过 ITO透明电极层8,10。发光装置100还具有形成在发光层部24和ITO透明电极层8,10之间的含有In的GaAs的接触层，以与ITO透明电极层8,10接触。 ITO透明电极层。接触层7,9通过在发光层部分上形成GaAs层7'，9'而获得的叠层13退火并通过形成ITO透明电极层8,10而与GaAs层接触而形成 7'，9'，从而允许In从ITO透明电极层8,10扩散到GaAs层7'，9'中。这提供了一种制造发光器件的方法，其中作为发光驱动电极的ITO透明电极层被接触层接合，从而降低这些电极的接触电阻，从而使接触层在其形成期间不太容易发生与发光层部分的晶格常数的差异。

4. 发明授权

US06995401B2 Light emitting device and method of fabricating the same 失效
标题翻译：发光元件及其制造方法
公开(公告)号：US06995401B2
公开(公告)日：2006-02-07
申请号：US10690479
申请日：2003-10-22
申请人： Masato Yamada , Nobuhiko Noto , Masanobu Takahashi , Kingo Suzuki , Shinji Nozaki , Kazuo Uchida , Hiroshi Morisaki
发明人： Masato Yamada , Nobuhiko Noto , Masanobu Takahashi , Kingo Suzuki , Shinji Nozaki , Kazuo Uchida , Hiroshi Morisaki
IPC分类号： H01L27/15
CPC分类号： H01L33/14 , H01L33/20 , H01L33/42 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , Y10S257/918 , H01L2924/00014 , H01L2924/00
摘要： A light emitting device having an oxide transparent electrode layer as an emission drive electrode, and designed so that damage possibly occurs during bonding of electrode wires to the bonding pads is less influential to a light emitting layer portion is disclosed. The light emitting device has the light emitting layer portion composed of a compound semiconductor and has a double heterostructure in which a first-conductivity-type cladding layer, an active layer and a second-conductivity-type cladding layer are stacked in this order; and the light emitting layer portion is applied with emission drive voltage through an oxide transparent electrode layer formed so as to cover the main surface of the second-conductivity-type cladding layer. A bonding pad composed of a metal is disposed on the oxide transparent electrode layer, and to the bonding pad an electrode wire for current supply is bonded. Between the second-conductivity cladding layer and the oxide transparent electrode layer, a cushion layer composed of a compound semiconductor having a dopant concentration lower than that of the second-conductivity-type cladding layer is disposed.
摘要翻译：公开了一种具有氧化物透明电极层作为发光驱动电极的发光元件，其设计成使得在电极线接合到接合焊盘时可能发生的损伤对于发光层部分影响较小。发光器件具有由化合物半导体构成的发光层部分，并且具有双重异质结构，其中第一导电型包层，有源层和第二导电型包覆层依次层叠; 并且通过形成为覆盖第二导电型包层的主表面的氧化物透明电极层施加发光驱动电压。在氧化物透明电极层上设置由金属构成的接合焊盘，并且接合用于电流供给用的电极线。在第二导电率包层和氧化物透明电极层之间设置由掺杂剂浓度低于第二导电型包覆层的化合物半导体构成的缓冲层。

5. 发明授权

US06787383B2 Light-emitting device and method for manufacturing the same 失效
标题翻译：发光装置及其制造方法
公开(公告)号：US06787383B2
公开(公告)日：2004-09-07
申请号：US10255000
申请日：2002-09-26
申请人： Shunichi Ikeda , Masato Yamada , Nobuhiko Noto , Shinji Nozaki , Kazuo Uchida , Hiroshi Morisaki
发明人： Shunichi Ikeda , Masato Yamada , Nobuhiko Noto , Shinji Nozaki , Kazuo Uchida , Hiroshi Morisaki
IPC分类号： H01L2100
CPC分类号： H01L33/38 , H01L33/14 , H01L33/20 , H01L33/387
摘要： The light-emitting device 100 has an ITO electrode layer 8 for applying drive voltage for light emission to a light emitting layer section 24, where the light from the light emitting layer section 24 is extracted as being passed through the ITO electrode layer 8. Between the light emitting layer section 24 and the ITO electrode layer 8, an electrode contact layer 7 composed of In-containing GaAs is located so as to contact with such ITO electrode layer 8, where occupied areas and unoccupied areas for the electrode contact layer 7 are arranged in a mixed manner on the contact interface with the transparent electrode layer 8. The electrode contact layer 7 can be obtained by annealing a stack 13, which comprises a GaAs layer 7″ formed on the light emitting layer section 24 and the ITO electrode layer 8 formed so as to contact with the GaAs layer 7″, to thereby allow In to diffuse from the ITO electrode layer to the GaAs layer 7″.
摘要翻译：发光装置100具有用于向发光层部分24施加用于发光的驱动电压的ITO电极层8，其中来自发光层部分24的光被提取通过ITO电极层8。发光层部分24和ITO电极层8，由含In的GaAs组成的电极接触层7被定位成与ITO电极层8接触，其中用于电极接触层7的占据区域和未占用区域是以与透明电极层8的接触界面上混合的方式配置。电极接触层7可以通过对包括形成在发光层部分24上的GaAs层7“和ITO电极的堆叠13进行退火而获得形成为与GaAs层7“接触的层8，从而允许In从ITO电极层扩散到GaAs层7”。

6. 发明申请

US20050285127A1 Method of fabricating light-emitting device and light-emitting device 有权
标题翻译：制造发光器件和发光器件的方法
公开(公告)号：US20050285127A1
公开(公告)日：2005-12-29
申请号：US10523636
申请日：2003-08-06
申请人： Nobuhiko Noto , Masato Yamada , Shinji Nozaki , Kazuo Uchida , Hiroshi Morisaki
发明人： Nobuhiko Noto , Masato Yamada , Shinji Nozaki , Kazuo Uchida , Hiroshi Morisaki
IPC分类号： H01L33/10 , H01L33/30 , H01L33/36 , H01L29/20 , H01L21/00
CPC分类号： H01L33/42 , H01L33/30
摘要： A light-emitting device 100 has ITO transparent electrode layers 8, 10 used for applying drive voltage for light-emission to a light-emitting layer section 24, and is designed so as to extract light from the light-emitting layer section 24 through the ITO transparent electrode layers 8, 10. The light-emitting device 100 also has contact layers composed of In-containing GaAs, formed between the light-emitting layer section 24 and the ITO transparent electrode layers 8, 10, so as to contact with the ITO transparent electrode layers respectively. The contact layers 7, 9 are formed by annealing a stack 13 obtained by forming GaAs layers 7′, 9′ on the light-emitting layer section, and by forming the ITO transparent electrode layers 8, 10 so as to contact with the GaAs layers 7′, 9′, to thereby allow In to diffuse from the ITO transparent electrode layers 8, 10 into the GaAs layers 7′, 9′. This provides a method of fabricating a light-emitting device, in which the ITO transparent electrode layers as the light-emission drive electrodes are bonded as being underlain by the contact layers, to thereby reduce contact resistance of these electrodes, and to thereby make the contact layers less susceptible to difference in the lattice constants with those of the light-emitting layer section during the formation thereof.
摘要翻译：发光装置100具有用于向发光层部分24施加用于发光的驱动电压的ITO透明电极层8,10，并且被设计成从发光层部分24通过 ITO透明电极层8,10。发光装置100还具有形成在发光层部24和ITO透明电极层8,10之间的含有In的GaAs的接触层，以分别与ITO透明电极层接触。接触层7,9通过在发光层部分上形成GaAs层7'，9'而获得的叠层13退火并通过形成ITO透明电极层8,10而与GaAs层接触而形成 7'，9'，从而允许In从ITO透明电极层8,10扩散到GaAs层7'，9'中。这提供了一种制造发光器件的方法，其中作为发光驱动电极的ITO透明电极层被接触层接合，从而降低这些电极的接触电阻，从而使接触层在其形成期间不太容易发生与发光层部分的晶格常数的差异。

7. 发明申请

US20060145177A1 Light emitting device and process for fabricating the same 审中-公开
标题翻译：发光装置及其制造方法
公开(公告)号：US20060145177A1
公开(公告)日：2006-07-06
申请号：US10546201
申请日：2003-12-19
申请人： Kazunori Hagimoto , Masato Yamada
发明人： Kazunori Hagimoto , Masato Yamada
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/0079
摘要： A light emitting device 100 of the invention is the one using a first main surface of a compound semiconductor layer portion, having a light emitting layer section 24 therein, as a light extraction surface, and having, on the second main surface side of the compound semiconductor layer, a device-substrate 7 bonded thereto while placing, in between, a main metal layer 10 having a reflective surface reflecting light from the light emitting layer section 24 towards the light extraction surface side, and is characterized in that the device-substrate 7 is composed of a Si substrate having a conductivity type of p type, and that the device-substrate 7 has, as being formed on the main surface thereof on the main metal layer 10 side, a contact layer 31 having Al as a major component. With respect to light emitting devices configured as having a structure in which a light emitting layer section and a device-substrate are bonded while placing a metal layer in between, the invention is successful in providing a light emitting device having a desirable electro-conductivity, and a method of fabricating the same.
摘要翻译：本发明的发光装置100是使用化合物半导体层部的第一主表面，其中具有发光层部分24作为光提取表面的发光器件100，并且在化合物的第二主表面侧半导体层，与其结合的器件基板7，同时在其间具有反射表面的主金属层10，反射表面反射来自发光层部分24的光朝向光提取表面侧，并且其特征在于，器件基板 7由具有导电类型为p型的Si衬底组成，器件衬底7在主金属层10侧的主表面上形成有以Al为主要成分的接触层31 。对于配置为具有发光层部分和器件 - 衬底被结合在一起的结构的发光器件，在其间放置金属层的情况下，本发明成功地提供了具有期望的导电性的发光器件，及其制造方法。

8. 发明申请

US20120287990A1 IMAGE PROCESSOR 有权
标题翻译：图像处理器
公开(公告)号：US20120287990A1
公开(公告)日：2012-11-15
申请号：US13522122
申请日：2010-11-29
申请人： Toshimitsu Tatsuka , Hiromu Hasegawa , Takeaki Komuro , Masato Yamada
发明人： Toshimitsu Tatsuka , Hiromu Hasegawa , Takeaki Komuro , Masato Yamada
IPC分类号： H04N7/12
CPC分类号： H04N19/174 , H04N19/124 , H04N19/147 , H04N19/149 , H04N19/196 , H04N19/61
摘要： An image processor includes an encoder that performs encoding including quantization on an image signal and a controller that controls a quantization parameter for quantization. The controller determines a quantization parameter of a currently target macroblock as an increase or decrease from a reference value, and determines the increase or decrease based on a difference between a target amount of code for a predetermined number of macroblocks fewer than a total number of macroblocks within one frame and a generated amount of code of the predetermined number of macroblocks processed immediately before. The controller can further determine the increase or decrease, based on pixel information of the currently target macroblock such as an activity evaluation value.
摘要翻译：图像处理器包括编码器，该编码器执行包括对图像信号的量化的编码以及控制量化量化参数的控制器。控制器根据参考值确定当前目标宏块的量化参数为增加或减小，并且基于小于总宏块数的预定数量的宏块的目标代码量之间的差确定增加或减小并且在紧接着之前处理预定数量的宏块的生成的代码量。控制器可以基于诸如活动评估值的当前目标宏块的像素信息来进一步确定增加或减少。

9. 发明申请

US20110051209A1 BEAM IRRADIATION APPARATUS AND LASER RADAR 审中-公开
标题翻译：光束辐射装置和激光雷达
公开(公告)号：US20110051209A1
公开(公告)日：2011-03-03
申请号：US12869312
申请日：2010-08-26
申请人： Masato Yamada , Takaaki Morimoto , Yoichiro Goto
发明人： Masato Yamada , Takaaki Morimoto , Yoichiro Goto
IPC分类号： G02B26/10
CPC分类号： G02B26/101 , B60T7/22 , G01S7/4814 , G01S7/4817 , G01S17/10 , G01S17/42
摘要： A beam irradiation apparatus includes a light source which outputs a laser beam, a convergent lens into which the laser beam output from the light source is entered, and a scanning portion which makes the laser beam transmitted through the convergent lens scan on a target region. In the beam irradiation apparatus, the laser light source is arranged such that a pn junction surface of a laser chip is parallel with the vertical direction. Length of the laser beam in the vertical direction on the target region is set by length of a light emitting portion of the laser light source in the vertical direction. Further, a wavefront aberration of the convergent lens with respect to the laser beam is set to be 0.15 λrms or less.
摘要翻译：束照射装置包括输出激光束的光源，从光源输出的激光束入射到的会聚透镜，以及使激光束通过会聚透镜扫描的目标区域的扫描部。在光束照射装置中，激光光源被配置为使得激光芯片的pn结面与垂直方向平行。目标区域上的垂直方向上的激光束的长度由激光光源的发光部分的垂直方向的长度来设定。此外，会聚透镜相对于激光束的波前像差被设定为0.15λrms以下。

10. 发明申请

US20100321751A1 MIRROR ACTUATOR AND BEAM IRRADIATION DEVICE 审中-公开
标题翻译：镜子致动器和光束辐射装置
公开(公告)号：US20100321751A1
公开(公告)日：2010-12-23
申请号：US12815788
申请日：2010-06-15
申请人： Masato Yamada , Yoichiro Goto , Nobuo Iwatsuki , Yoshiaki Maeno
发明人： Masato Yamada , Yoichiro Goto , Nobuo Iwatsuki , Yoshiaki Maeno
IPC分类号： G02B26/10 , G02B7/182
CPC分类号： G02B26/101
摘要： A mirror actuator includes a base block; a first pivot shaft fixedly attached to the base block; a first pivot portion pivotally supported on the first pivot shaft; a second pivot shaft fixedly attached to the first pivot portion and perpendicularly intersecting with the first pivot shaft; a second pivot portion pivotally supported on the second pivot shaft; and a mirror attached to the second pivot portion. In the above arrangement, the first pivot portion and the second pivot portion respectively have a first bearing portion and a second bearing portion for bearing the first pivot shaft and the second pivot shaft at one position.
摘要翻译：反射镜致动器包括基座; 固定在基座上的第一枢转轴; 枢转地支撑在所述第一枢轴上的第一枢转部分; 固定地连接到第一枢转部分并与第一枢轴垂直相交的第二枢转轴; 枢转地支撑在所述第二枢转轴上的第二枢转部分; 以及附接到第二枢转部分的反射镜。在上述结构中，第一枢转部分和第二枢轴部分别具有第一轴承部分和第二轴承部分，用于将第一枢轴和第二枢轴轴承在一个位置。

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