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1. 发明申请

US20060145177A1 Light emitting device and process for fabricating the same 审中-公开
标题翻译：发光装置及其制造方法
公开(公告)号：US20060145177A1
公开(公告)日：2006-07-06
申请号：US10546201
申请日：2003-12-19
申请人： Kazunori Hagimoto , Masato Yamada
发明人： Kazunori Hagimoto , Masato Yamada
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/0079
摘要： A light emitting device 100 of the invention is the one using a first main surface of a compound semiconductor layer portion, having a light emitting layer section 24 therein, as a light extraction surface, and having, on the second main surface side of the compound semiconductor layer, a device-substrate 7 bonded thereto while placing, in between, a main metal layer 10 having a reflective surface reflecting light from the light emitting layer section 24 towards the light extraction surface side, and is characterized in that the device-substrate 7 is composed of a Si substrate having a conductivity type of p type, and that the device-substrate 7 has, as being formed on the main surface thereof on the main metal layer 10 side, a contact layer 31 having Al as a major component. With respect to light emitting devices configured as having a structure in which a light emitting layer section and a device-substrate are bonded while placing a metal layer in between, the invention is successful in providing a light emitting device having a desirable electro-conductivity, and a method of fabricating the same.
摘要翻译：本发明的发光装置100是使用化合物半导体层部的第一主表面，其中具有发光层部分24作为光提取表面的发光器件100，并且在化合物的第二主表面侧半导体层，与其结合的器件基板7，同时在其间具有反射表面的主金属层10，反射表面反射来自发光层部分24的光朝向光提取表面侧，并且其特征在于，器件基板 7由具有导电类型为p型的Si衬底组成，器件衬底7在主金属层10侧的主表面上形成有以Al为主要成分的接触层31 。对于配置为具有发光层部分和器件 - 衬底被结合在一起的结构的发光器件，在其间放置金属层的情况下，本发明成功地提供了具有期望的导电性的发光器件，及其制造方法。

2. 发明授权

US07041529B2 Light-emitting device and method of fabricating the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US07041529B2
公开(公告)日：2006-05-09
申请号：US10690453
申请日：2003-10-22
申请人： Masato Yamada , Jun-ya Ishizaki , Nobuhiko Noto , Kazunori Hagimoto , Shinji Nozaki , Kazuo Uchida , Hiroshi Morisaki
发明人： Masato Yamada , Jun-ya Ishizaki , Nobuhiko Noto , Kazunori Hagimoto , Shinji Nozaki , Kazuo Uchida , Hiroshi Morisaki
IPC分类号： H01L21/00 , H01L21/30
CPC分类号： H01L33/42 , H01L33/0079 , H01L33/10 , H01L33/145 , H01L33/387 , H01L33/405 , H01L2933/0016
摘要： In a light-emitting device, a light-emitting layer portion composed of a compound semiconductor is bonded on one main surface of a transparent conductive semiconductor substrate while placing a substrate-bonding conductive oxide layer composed of a conductive oxide in between. Between the light-emitting layer portion and the substrate-bonding conductive oxide layer, a contact layer for reducing junction resistance with the substrate-bonding conductive oxide layer so as to contact with the substrate-bonding conductive oxide layer. This is successful in providing the light-emitting device which is producible at low costs, has a low series resistance, and can attain a sufficient emission efficiency despite it has a thick current-spreading layer.
摘要翻译：在发光装置中，将由化合物半导体构成的发光层部分接合在透明导电半导体衬底的一个主表面上，同时将由导电氧化物构成的衬底接合导电氧化物层放置在其间。在发光层部分和与衬底结合的导电氧化物层之间，具有用于与衬底结合导电氧化物层降低结电阻以与衬底结合导电氧化物层接触的接触层。这是成功地提供了可以低成本生产的低发光装置，具有低串联电阻，并且尽管具有厚的电流扩展层，但是可以获得足够的发光效率。

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