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1. 发明授权

US06265288B1 Method of manufacturing silicon-based thin-film photoelectric conversion device 有权
标题翻译：硅基薄膜光电转换装置的制造方法
公开(公告)号：US06265288B1
公开(公告)日：2001-07-24
申请号：US09390085
申请日：1999-09-03
申请人： Yoshifumi Okamoto , Masashi Yoshimi
发明人： Yoshifumi Okamoto , Masashi Yoshimi
IPC分类号： H01L2120
CPC分类号： H01L21/02422 , H01L21/02425 , H01L21/0245 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L31/075 , H01L31/182 , H01L31/1824 , Y02E10/545 , Y02E10/546 , Y02E10/548 , Y02P70/521
摘要： A method of fabricating a silicon-based thin-film photoelectric conversion device, where a plasma CVD process is used to deposit a polycrystalline photoelectric conversion layer. During the deposition of the photoelectric conversion layer, the temperature of the underlying layer is less than 550° C., the pressure in the plasma chamber is more than 5 Torr, and the ratio of the flow rates of a hydrogen gas and a silane-type gas is more than 50. In addition, one of the following operations is carried out during the deposition to change the relevant parameters between the start and end of the deposition. First, the distance between the plasma discharge electrodes is increased gradually or in steps. Second, the pressure of the reaction chamber is increased gradually or in steps. Third, the flow rate of the silane-type gas is increased gradually. Fourth, the plasma discharge power density is reduced gradually or in steps.
摘要翻译：一种制造硅基薄膜光电转换装置的方法，其中使用等离子体CVD工艺沉积多晶光电转换层。在光电转换层的沉积期间，下层的温度低于550℃，等离子体室内的压力大于5Torr，氢气与硅烷 - 型气体大于50.此外，在沉积期间进行以下操作之一以改变沉积开始和结束之间的相关参数。首先，等离子体放电电极之间的距离逐渐或逐步增加。第二，反应室的压力逐渐增加或逐步增加。三是硅烷型气体的流量逐渐增加。第四，等离子体放电功率密度逐渐或逐步降低。

2. 发明授权

US06190932B1 Method of manufacturing tandem type thin film photoelectric conversion device 有权
标题翻译：制造串联型薄膜光电转换装置的方法
公开(公告)号：US06190932B1
公开(公告)日：2001-02-20
申请号：US09389514
申请日：1999-09-03
申请人： Masashi Yoshimi , Yoshifumi Okamoto
发明人： Masashi Yoshimi , Yoshifumi Okamoto
IPC分类号： H01L2100
CPC分类号： H01L31/076 , H01L31/077 , H01L31/206 , Y02E10/548 , Y02P70/521
摘要： A p type semiconductor layer, an i type amorphous photoelectric conversion layer and an n type semiconductor layer of an amorphous type photoelectric conversion unit are formed in separate deposition chambers, respectively. A p type semiconductor layer, an i type crystalline photoelectric conversion layer and an n type semiconductor layer of crystalline type photoelectric conversion unit are formed continuously in one deposition chamber. Accordingly, a method of manufacturing a tandem type thin film photoelectric conversion device is obtained by which a tandem type thin film photoelectric conversion device having superior performance and high quality can be formed by a simple apparatus at a low cost with superior productivity.
摘要翻译：在分离的沉积室中分别形成p型半导体层，i型非晶型光电转换层和非晶型光电转换单元的n型半导体层。在一个沉积室中连续地形成p型半导体层，i型晶体光电转换层和n型半导体晶体型光电转换单元。因此，制造串联型薄膜光电转换装置的方法是通过简单的装置以低成本形成具有优异性能和高质量的串联型薄膜光电转换装置，具有优异的生产率。

3. 发明授权

US06337224B1 Method of producing silicon thin-film photoelectric transducer and plasma CVD apparatus used for the method 有权
标题翻译：生产用于该方法的硅薄膜光电转换器和等离子体CVD装置的方法
公开(公告)号：US06337224B1
公开(公告)日：2002-01-08
申请号：US09554164
申请日：2000-05-10
申请人： Yoshifumi Okamoto , Masashi Yoshimi , Kenji Yamamoto
发明人： Yoshifumi Okamoto , Masashi Yoshimi , Kenji Yamamoto
IPC分类号： H01L2100
CPC分类号： H01L31/076 , H01L31/03685 , H01L31/077 , H01L31/182 , H01L31/206 , Y02E10/545 , Y02E10/546 , Y02E10/548 , Y02P70/521 , Y10S438/935
摘要： In a method of manufacturing a silicon-based thin film photoelectric converter, a crystalline photoelectric conversion layer included in the photoelectric converter is deposited by plasma CVD under the following conditions: the temperature of the underlying film is at most 550° C.; a gas introduced into a plasma reaction chamber has a silane-based gas and a hydrogen gas where the flow rate of the hydrogen gas relative to the silane-based gas is at least 50 times; the pressure in the plasma reaction chamber is set to 3 Torr; and the deposition speed is 17 nm/min in the thickness-wise direction.
摘要翻译：在制造硅基薄膜光电转换器的方法中，包括在光电转换器中的晶体光电转换层在以下条件下通过等离子体CVD沉积：底层膜的温度至多为550℃。引入等离子体反应室的气体具有硅烷系气体和氢气，氢气相对于硅烷系气体的流量为50倍以上，等离子体反应室中的压力设定为3乇; 并且沉积速度在厚度方向上为17nm / min。

4. 发明授权

US06200825B1 Method of manufacturing silicon based thin film photoelectric conversion device 有权
标题翻译：硅基薄膜光电转换装置的制造方法
公开(公告)号：US06200825B1
公开(公告)日：2001-03-13
申请号：US09390083
申请日：1999-09-03
申请人： Masashi Yoshimi , Yoshifumi Okamoto , Kenji Yamamoto
发明人： Masashi Yoshimi , Yoshifumi Okamoto , Kenji Yamamoto
IPC分类号： H01L2100
CPC分类号： C23C16/24 , C23C16/45523 , C23C16/45557 , C23C16/50 , C23C16/54 , H01L31/0747 , H01L31/075 , H01L31/076 , H01L31/1804 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A p type semiconductor layer, an i type crystalline (polycrystalline, microcrystalline) photoelectric conversion layer, and an n type semiconductor layer are successively formed in the same plasma CVD deposition chamber. The p type semiconductor layer is produced on condition that the pressure in the deposition chamber is at least 5 Torr. Accordingly, a silicon-based thin film photoelectric conversion device having the p type semiconductor layer, the i type crystalline photoelectric conversion layer, and the n type semiconductor layer stacked on each other is manufactured. A method of manufacturing a silicon-based thin film photoelectric conversion device is thus implemented to produce a photoelectric conversion device having a superior performance and quality by a simple apparatus at a low cost and with high productivity.
摘要翻译：在相同的等离子体CVD沉积室中依次形成p型半导体层，i型结晶（多晶，微晶）光电转换层和n型半导体层。在沉积室中的压力至少为5托的条件下制备p型半导体层。因此，制造了具有堆叠在p型半导体层，i型晶体光电转换层和n型半导体层的硅基薄膜光电转换装置。因此，制造硅基薄膜光电转换装置的方法通过简单的装置以低成本和高生产率制造具有优异性能和质量的光电转换装置。

5. 发明申请

US20140291994A1 VEHICLE AND METHOD OF CONTROLLING VEHICLE 有权
标题翻译：车辆和车辆控制方法
公开(公告)号：US20140291994A1
公开(公告)日：2014-10-02
申请号：US14345474
申请日：2011-09-26
申请人： Takahiko Hirasawa , Masashi Yoshimi
发明人： Takahiko Hirasawa , Masashi Yoshimi
IPC分类号： H02P9/04
CPC分类号： B60W20/10 , B60L1/00 , B60L1/006 , B60L9/00 , B60L11/1859 , B60L11/1861 , B60L2240/36 , B60L2240/54 , B60L2250/10 , B60L2250/16 , B60L2250/30 , B60L2260/12 , B60L2260/16 , B60R16/03 , B60W10/30 , B60W50/14 , H02P9/04 , Y02T10/7005 , Y02T10/7044 , Y02T10/705
摘要： A vehicle includes a feeding system supplying an electric power to an external device disposed outside the vehicle, a controller controlling the operation of the feeding system, and an information output unit outputting predetermined information. The controller performs the processing of determining whether or not feeding can be performed from the feeding system to the external device. When the feeding from the feeding system to the external device is prohibited, the controller causes the information output unit to output prohibition information about the prohibition of the feeding including the contents of a determination processing.
摘要翻译：车辆包括向设置在车辆外部的外部装置提供电力的馈送系统，控制馈送系统的操作的控制器和输出预定信息的信息输出单元。控制器执行确定是否可以从馈送系统向外部设备执行馈送的处理。当禁止从进给系统进给到外部装置时，控制器使信息输出单元输出关于禁止进给的禁止信息，包括确定处理的内容。

6. 发明授权

US08676418B2 Control system and control method 有权
标题翻译：控制系统及控制方法
公开(公告)号：US08676418B2
公开(公告)日：2014-03-18
申请号：US13159160
申请日：2011-06-13
申请人： Masashi Yoshimi
发明人： Masashi Yoshimi
IPC分类号： B60L9/00
CPC分类号： B60W20/00 , B60K6/48 , B60L11/12 , B60L2250/16 , B60W10/30 , B60W50/06 , B60W50/082 , B60W50/14 , B60W2050/146 , B60W2510/244 , Y02T10/6221 , Y02T10/7077 , Y02T10/92 , Y10T477/23 , Y10T477/26 , Y10T477/33
摘要： A control for a hybrid vehicle includes; obtaining information that an EV switch that is operated when a travel of the vehicle in an EV mode in which priority is given to an EV travel in which the vehicle travels by a motive power only from a rotary electric machine is to be selected has been operated; starting a permission preparation control for causing a transition from a state in which a situation of the vehicle satisfies a predetermined reservation condition for reserving the EV mode to a state in which the situation of the vehicle satisfies a predetermined permission condition for permitting the EV mode if the situation of the vehicle does not satisfy the permission condition but satisfies the reservation condition when the EV switch has been operated; and enabling to control the travel of the vehicle in the EV mode if the predetermined permission condition is satisfied.
摘要翻译：混合动力车辆的控制包括：获取信息，即当EV被选择优先给予车辆行驶的EV行驶的EV行驶中的车辆行驶时，操作的EV开关被操作，该车辆行驶通过来自旋转电机的动力行驶。 ; 开始许可准备控制，以从车辆的状况满足预定EV模式的预定条件的状态转变到车辆的状况满足允许EV模式的预定允许条件的状态，如果车辆的情况不满足允许条件，但满足EV切换已经运行时的预约条件; 并且如果满足预定允许条件，则能够控制车辆在EV模式中的行驶。

7. 发明申请

US20060097259A1 Thin-film photoelectric converter 有权
标题翻译：薄膜光电转换器
公开(公告)号：US20060097259A1
公开(公告)日：2006-05-11
申请号：US10543516
申请日：2004-05-28
申请人： Takashi Suezaki , Masashi Yoshimi , Toshiaki Sasaki , Yuko Tawada , Kenji Yamamoto
发明人： Takashi Suezaki , Masashi Yoshimi , Toshiaki Sasaki , Yuko Tawada , Kenji Yamamoto
IPC分类号： H01L29/76 , H01L29/10
CPC分类号： H01L31/076 , H01L31/046 , Y02E10/548
摘要： A thin film photoelectric converter, especially an integrated thin film photoelectric converter having improved photoelectric conversion efficiency is provided by controlling an open-circuit voltage and a fill factor so as not be small in a thin film photoelectric converter including a crystalline silicon photoelectric conversion unit. The thin film photoelectric converter by the present invention has at least a transparent electrode film, a crystalline silicon photoelectric conversion unit, and a back electrode film formed sequentially on one principal surface of a transparent substrate, and the converter has a whitish discoloring area on a part of a surface of the converter after formation of the crystalline silicon photoelectric conversion unit. A percentage of dimensions of the whitish discoloring area preferably is not more than 5% of a dimension of the photoelectric conversion area. A thin film photoelectric converter of the present invention is preferably an integrated thin film photoelectric converter.
摘要翻译：通过在包括晶体硅光电转换单元的薄膜光电转换器中控制开路电压和填充因子以不小而提供薄膜光电转换器，特别是具有改进的光电转换效率的集成薄膜光电转换器。本发明的薄膜光电转换器至少在透明基板的一个主表面上依次形成透明电极膜，晶体硅光电转换单元和背面电极膜，并且转换器具有白色变色区域形成晶体硅光电转换单元后的转换器表面的一部分。白色变色区域的尺寸的百分比优选不大于光电转换区域的尺寸的5％。本发明的薄膜光电转换器优选为集成薄膜光电转换器。

8. 发明申请

US20060043517A1 Stacked photoelectric converter 有权
公开(公告)号：US20060043517A1
公开(公告)日：2006-03-02
申请号：US10530283
申请日：2004-07-15
申请人： Toshiaki Sasaki , Yohei Koi , Kenji Yamamoto , Masashi Yoshimi , Mitsuru Ichikawa
发明人： Toshiaki Sasaki , Yohei Koi , Kenji Yamamoto , Masashi Yoshimi , Mitsuru Ichikawa
IPC分类号： H01L31/105
CPC分类号： H01L31/077 , H01L31/056 , H01L31/076 , Y02E10/52 , Y02E10/548
摘要： In a stacked-layer type photoelectric conversion device, a plurality of photoelectric conversion units are stacked on a substrate, each of which includes a one conductivity-type layer, a photoelectric conversion layer of substantially intrinsic semiconductor and an opposite conductivity-type layer in this order from a light-incident side. At least one of the opposite conductivity-type layer in a front photoelectric conversion unit arranged relatively closer to the light-incident side and the one conductivity-type layer in a back photoelectric conversion unit arranged adjacent to the front photoelectric conversion unit includes a silicon composite layer at least in a part thereof. The silicon composite layer has a thickness of more than 20 nm and less than 130 nm and an oxygen concentration of more than 25 atomic % and less than 60 atomic %, and includes silicon-rich phase parts in an amorphous alloy phase of silicon and oxygen.

9. 发明授权

US06187150B1 Method for manufacturing thin film photovoltaic device 有权
标题翻译：制造薄膜光伏器件的方法
公开(公告)号：US06187150B1
公开(公告)日：2001-02-13
申请号：US09414092
申请日：1999-10-07
申请人： Masashi Yoshimi , Kenji Yamamoto
发明人： Masashi Yoshimi , Kenji Yamamoto
IPC分类号： C23C1408
CPC分类号： H01L31/1884 , H01L31/056 , H01L31/075 , Y02E10/52 , Y02E10/548
摘要： A method for manufacturing a thin film photovoltaic device comprising a transparent conductive film, a thin film photovoltaic unit, and a back transparent conductive film and a back metal electrode which are successively formed on a substrate, wherein the back transparent conductive film is formed by sputtering comprising steps of forming an initial back transparent conductive film under a pressure of 5×10−2 Torr or more for 1 to 30 seconds in the initial stage and forming a main back transparent conductive film having the remainder thickness under a pressure reduced to {fraction (1/10)} the initial pressure or less.
摘要翻译：一种薄膜光伏器件的制造方法，其特征在于，在基板上依次形成有透明导电膜，薄膜光电单元，背面透明导电膜和背面金属电极，其中，所述背面透明导电膜通过溅射形成包括在初始阶段在5×10 -2 Torr以上的压力下形成初始背面透明导电膜1〜30秒的步骤，并且在压力降低到{部分（1）的情况下形成剩余厚度的主背面透明导电膜 / 10）}初始压力或更小。

10. 发明授权

US08681457B2 Power source system for electric powered vehicle and control method therefor 失效
标题翻译：电动车辆电源系统及其控制方法
公开(公告)号：US08681457B2
公开(公告)日：2014-03-25
申请号：US13258660
申请日：2009-04-23
申请人： Shinichiro Minegishi , Masashi Yoshimi
发明人： Shinichiro Minegishi , Masashi Yoshimi
IPC分类号： H02H7/10 , H02H9/02
CPC分类号： B60W20/10 , B60K1/02 , B60K6/365 , B60K6/445 , B60L3/003 , B60L3/0046 , B60L3/0069 , B60L3/0092 , B60L11/123 , B60L11/14 , B60L11/1816 , B60L2210/14 , B60L2220/14 , B60W10/26 , B60W20/00 , H01H47/002 , Y02T10/6217 , Y02T10/6239 , Y02T10/6269 , Y02T10/7005 , Y02T10/7072 , Y02T10/7077 , Y02T10/7225 , Y02T90/127 , Y02T90/14
摘要： Relays are inserted and connected between a battery and a boosting converter, and other relays are inserted and connected between another battery and another boosting converter. A controller outputs control signals that control opening/closing of the relays. When short-circuit of a switching element occurs in the boosting converters, the controller controls turning-off of the relays such that at least one of order and timing of turning off the relays is changed depending on which of the switching elements is short-circuited.
摘要翻译：继电器插入并连接在电池和升压转换器之间，其他继电器插入并连接在另一个电池和另一个升压转换器之间。控制器输出控制继电器开/关的控制信号。当升压转换器中发生开关元件的短路时，控制器控制继电器的关断，使得关断继电器的顺序和定时中的至少一个根据哪个开关元件短路而改变。

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