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1. 发明授权

US06200825B1 Method of manufacturing silicon based thin film photoelectric conversion device 有权
标题翻译：硅基薄膜光电转换装置的制造方法
公开(公告)号：US06200825B1
公开(公告)日：2001-03-13
申请号：US09390083
申请日：1999-09-03
申请人： Masashi Yoshimi , Yoshifumi Okamoto , Kenji Yamamoto
发明人： Masashi Yoshimi , Yoshifumi Okamoto , Kenji Yamamoto
IPC分类号： H01L2100
CPC分类号： C23C16/24 , C23C16/45523 , C23C16/45557 , C23C16/50 , C23C16/54 , H01L31/0747 , H01L31/075 , H01L31/076 , H01L31/1804 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A p type semiconductor layer, an i type crystalline (polycrystalline, microcrystalline) photoelectric conversion layer, and an n type semiconductor layer are successively formed in the same plasma CVD deposition chamber. The p type semiconductor layer is produced on condition that the pressure in the deposition chamber is at least 5 Torr. Accordingly, a silicon-based thin film photoelectric conversion device having the p type semiconductor layer, the i type crystalline photoelectric conversion layer, and the n type semiconductor layer stacked on each other is manufactured. A method of manufacturing a silicon-based thin film photoelectric conversion device is thus implemented to produce a photoelectric conversion device having a superior performance and quality by a simple apparatus at a low cost and with high productivity.
摘要翻译：在相同的等离子体CVD沉积室中依次形成p型半导体层，i型结晶（多晶，微晶）光电转换层和n型半导体层。在沉积室中的压力至少为5托的条件下制备p型半导体层。因此，制造了具有堆叠在p型半导体层，i型晶体光电转换层和n型半导体层的硅基薄膜光电转换装置。因此，制造硅基薄膜光电转换装置的方法通过简单的装置以低成本和高生产率制造具有优异性能和质量的光电转换装置。

2. 发明授权

US06265288B1 Method of manufacturing silicon-based thin-film photoelectric conversion device 有权
标题翻译：硅基薄膜光电转换装置的制造方法
公开(公告)号：US06265288B1
公开(公告)日：2001-07-24
申请号：US09390085
申请日：1999-09-03
申请人： Yoshifumi Okamoto , Masashi Yoshimi
发明人： Yoshifumi Okamoto , Masashi Yoshimi
IPC分类号： H01L2120
CPC分类号： H01L21/02422 , H01L21/02425 , H01L21/0245 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L31/075 , H01L31/182 , H01L31/1824 , Y02E10/545 , Y02E10/546 , Y02E10/548 , Y02P70/521
摘要： A method of fabricating a silicon-based thin-film photoelectric conversion device, where a plasma CVD process is used to deposit a polycrystalline photoelectric conversion layer. During the deposition of the photoelectric conversion layer, the temperature of the underlying layer is less than 550° C., the pressure in the plasma chamber is more than 5 Torr, and the ratio of the flow rates of a hydrogen gas and a silane-type gas is more than 50. In addition, one of the following operations is carried out during the deposition to change the relevant parameters between the start and end of the deposition. First, the distance between the plasma discharge electrodes is increased gradually or in steps. Second, the pressure of the reaction chamber is increased gradually or in steps. Third, the flow rate of the silane-type gas is increased gradually. Fourth, the plasma discharge power density is reduced gradually or in steps.
摘要翻译：一种制造硅基薄膜光电转换装置的方法，其中使用等离子体CVD工艺沉积多晶光电转换层。在光电转换层的沉积期间，下层的温度低于550℃，等离子体室内的压力大于5Torr，氢气与硅烷 - 型气体大于50.此外，在沉积期间进行以下操作之一以改变沉积开始和结束之间的相关参数。首先，等离子体放电电极之间的距离逐渐或逐步增加。第二，反应室的压力逐渐增加或逐步增加。三是硅烷型气体的流量逐渐增加。第四，等离子体放电功率密度逐渐或逐步降低。

3. 发明授权

US06190932B1 Method of manufacturing tandem type thin film photoelectric conversion device 有权
标题翻译：制造串联型薄膜光电转换装置的方法
公开(公告)号：US06190932B1
公开(公告)日：2001-02-20
申请号：US09389514
申请日：1999-09-03
申请人： Masashi Yoshimi , Yoshifumi Okamoto
发明人： Masashi Yoshimi , Yoshifumi Okamoto
IPC分类号： H01L2100
CPC分类号： H01L31/076 , H01L31/077 , H01L31/206 , Y02E10/548 , Y02P70/521
摘要： A p type semiconductor layer, an i type amorphous photoelectric conversion layer and an n type semiconductor layer of an amorphous type photoelectric conversion unit are formed in separate deposition chambers, respectively. A p type semiconductor layer, an i type crystalline photoelectric conversion layer and an n type semiconductor layer of crystalline type photoelectric conversion unit are formed continuously in one deposition chamber. Accordingly, a method of manufacturing a tandem type thin film photoelectric conversion device is obtained by which a tandem type thin film photoelectric conversion device having superior performance and high quality can be formed by a simple apparatus at a low cost with superior productivity.
摘要翻译：在分离的沉积室中分别形成p型半导体层，i型非晶型光电转换层和非晶型光电转换单元的n型半导体层。在一个沉积室中连续地形成p型半导体层，i型晶体光电转换层和n型半导体晶体型光电转换单元。因此，制造串联型薄膜光电转换装置的方法是通过简单的装置以低成本形成具有优异性能和高质量的串联型薄膜光电转换装置，具有优异的生产率。

4. 发明授权

US06337224B1 Method of producing silicon thin-film photoelectric transducer and plasma CVD apparatus used for the method 有权
标题翻译：生产用于该方法的硅薄膜光电转换器和等离子体CVD装置的方法
公开(公告)号：US06337224B1
公开(公告)日：2002-01-08
申请号：US09554164
申请日：2000-05-10
申请人： Yoshifumi Okamoto , Masashi Yoshimi , Kenji Yamamoto
发明人： Yoshifumi Okamoto , Masashi Yoshimi , Kenji Yamamoto
IPC分类号： H01L2100
CPC分类号： H01L31/076 , H01L31/03685 , H01L31/077 , H01L31/182 , H01L31/206 , Y02E10/545 , Y02E10/546 , Y02E10/548 , Y02P70/521 , Y10S438/935
摘要： In a method of manufacturing a silicon-based thin film photoelectric converter, a crystalline photoelectric conversion layer included in the photoelectric converter is deposited by plasma CVD under the following conditions: the temperature of the underlying film is at most 550° C.; a gas introduced into a plasma reaction chamber has a silane-based gas and a hydrogen gas where the flow rate of the hydrogen gas relative to the silane-based gas is at least 50 times; the pressure in the plasma reaction chamber is set to 3 Torr; and the deposition speed is 17 nm/min in the thickness-wise direction.
摘要翻译：在制造硅基薄膜光电转换器的方法中，包括在光电转换器中的晶体光电转换层在以下条件下通过等离子体CVD沉积：底层膜的温度至多为550℃。引入等离子体反应室的气体具有硅烷系气体和氢气，氢气相对于硅烷系气体的流量为50倍以上，等离子体反应室中的压力设定为3乇; 并且沉积速度在厚度方向上为17nm / min。

5. 发明授权

US5825993A Information processing apparatus and output apparatus 失效
标题翻译：信息处理装置和输出装置
公开(公告)号：US5825993A
公开(公告)日：1998-10-20
申请号：US917100
申请日：1997-08-25
申请人： Akihiro Shimura , Satoshi Nagata , Yoshifumi Okamoto , Tetsuya Morita , Shunya Mitsuhashi , Nobuhiko Sato , Takanori Nishijima , Masaki Unishi
发明人： Akihiro Shimura , Satoshi Nagata , Yoshifumi Okamoto , Tetsuya Morita , Shunya Mitsuhashi , Nobuhiko Sato , Takanori Nishijima , Masaki Unishi
IPC分类号： B41J5/30 , B41J29/38 , G06F3/12 , G06K15/00
CPC分类号： G06K15/00 , G06F3/1296 , G06K15/1823 , G06K15/1863 , G06K2215/0017 , G06K2215/0062
摘要： An information processing apparatus comprises acquiring means for acquiring a memory capacity of a printer connected through a bi-directional interface, compare means for comparing the memory capacity acquired by the acquiring means with a capacity of data to be outputted to the printer, and determination means for determining a memory size of a memory of the printer in accordance with the comparison result. An output apparatus comprises receiving means for receiving memory size information determined by a capacity of data to be outputted from an information processing apparatus connected through a bi-directional interface and a capacity of a memory for storing the data, from the information processing apparatus, and setting means for dynamically setting a size of the memory for storing the data in accordance with the memory size information received by the receiving means.
摘要翻译：一种信息处理装置，包括：获取装置，用于获取通过双向接口连接的打印机的存储容量;比较装置，用于将获取装置获取的存储容量与要输出到打印机的数据的容量进行比较;以及确定装置用于根据比较结果确定打印机的存储器的存储器大小。输出装置包括：接收装置，用于从信息处理装置接收由通过双向接口连接的信息处理装置输出的数据的容量和用于存储数据的存储器的容量确定的存储器大小信息;以及设置装置，用于根据由接收装置接收的存储器尺寸信息动态地设置用于存储数据的存储器的大小。

6. 发明授权

US5668247A Thermoplastic polyimide, polyamide acid, and thermally fusible laminated film for covering conductive wires 失效
标题翻译：热塑性聚酰亚胺，聚酰胺酸和用于覆盖导电线的热熔层叠膜
公开(公告)号：US5668247A
公开(公告)日：1997-09-16
申请号：US167024
申请日：1993-12-16
申请人： Hiroyuki Furutani , Kazuhisa Danno , Yoshifumi Okamoto , Junya Ida , Yoshihide Oonari , Hitoshi Nojiri , Hirosaku Nagano
发明人： Hiroyuki Furutani , Kazuhisa Danno , Yoshifumi Okamoto , Junya Ida , Yoshihide Oonari , Hitoshi Nojiri , Hirosaku Nagano
IPC分类号： B32B15/08 , B32B27/36 , C08G69/44 , C08G73/10 , C08G73/16 , C08J5/18 , C09D179/08
CPC分类号： C08J5/18 , B32B15/08 , C08G73/1042 , C08G73/16 , C08J2379/08 , Y10T428/31504 , Y10T428/31721
摘要： The invention provides novel thermoplastic polyimide featuring solid adhesive property under low temperature, low hygroscopic coefficient, and solid resistivity to radioactive rays. The invention also provides novel polyamide acid which is substantially precursor of the thermoplastic polyimide, and also provides novel thermally fusible laminated film for covering conductive wires, featuring solid adhesive property under low temperature, solid resistivity to radioactive rays, and distinct suitability for covering superconductive wires in particular.The novel thermoplastic polyimide is represented by general formula (1) corresponding to the chemical structure shown below; ##STR1## wherein, Ar.sub.1, Ar.sub.2, Ar.sub.4, and Ar.sub.6, respectively designate divalent organic radical, whereas Ar.sub.3 and Ar.sub.5 respectively designate quadrivalent organic radical, wherein, 1, m, and n, respectively designate positive integer 0 to 1 or more than 1, wherein the sum of 1 and m aggregates 1 or more than 1, and wherein t designates positive integer of 1 or more than 1.
摘要翻译：本发明提供了新型热塑性聚酰亚胺，其在低温下具有固体粘合性，低吸湿系数和对放射线的固体电阻率。本发明还提供了基本上是热塑性聚酰亚胺前体的新型聚酰胺酸，并且还提供了用于覆盖导电线的新型热熔性层压膜，其特征在于在低温下具有固体粘合性，对放射线具有固体电阻率，并且具有明显的适用于覆盖超导线尤其是。新型热塑性聚酰亚胺由对应于下述化学结构的通式（1）表示; 其中，Ar1，Ar2，Ar4和Ar6分别表示二价有机基团，Ar3和Ar5分别表示四价有机基团，其中，1，m和n分别表示正整数0至1或大于1，其中1和m的和聚合1或大于1，其中t表示1或大于1的正整数。

7. 发明授权

US5408635A Method of controlling data output by direct memory access 失效
标题翻译：通过直接存储器访问控制数据输出的方法
公开(公告)号：US5408635A
公开(公告)日：1995-04-18
申请号：US243522
申请日：1994-05-16
申请人： Yoshifumi Okamoto
发明人： Yoshifumi Okamoto
IPC分类号： B41J5/30 , G06F3/12 , G06F12/04 , G06F13/28
CPC分类号： G06F12/04 , G06F13/28
摘要： An output control method includes the step of outputting a predetermined portion of data obtained by first direct memory access as last data of one line, checking whether the data obtained by the access includes data other than the last data, performing direct memory access again with respect to data at the same address as that in the previous access as start data of a line next to the previous line when it is determined that the obtained data includes data other than the last data, and outputting a predetermined portion of the data obtained by the second access as the start data. An output control apparatus for this method is also disclosed.
摘要翻译：输出控制方法包括以下步骤：将通过第一直接存储器访问获得的数据的预定部分作为一行的最后数据输出，检查由该访问获得的数据是否包括除最后数据以外的数据，再次执行直接存储器访问当确定所获得的数据包括除了最后数据之外的数据时，输出与先前访问相同地址的数据作为与前一行相邻的行的起始数据，并输出由第二次访问作为开始数据。还公开了一种用于该方法的输出控制装置。

8. 发明授权

US5387542A Polycrystalline silicon thin film and low temperature fabrication method thereof 失效
标题翻译：多晶硅薄膜及其低温制造方法
公开(公告)号：US5387542A
公开(公告)日：1995-02-07
申请号：US087759
申请日：1993-07-12
申请人： Kenji Yamamoto , Yoshifumi Okamoto
发明人： Kenji Yamamoto , Yoshifumi Okamoto
IPC分类号： H01L21/205 , H01L21/30 , H01L21/20
CPC分类号： H01L21/3003 , H01L21/02422 , H01L21/02532 , H01L21/02609 , H01L21/0262
摘要： A polycrystalline silicon thin film having a hydrogen content of not more than 5 atomic %, which can be fabricated on an inexpensive glass substrate (3) such as soda glass or on a glass substrate (3) provided with a metal electrode or transparent electrode. The polycrystalline silicon thin film can be fabricated at such a tempereture by using multiple repetitions of a process comprising the fabrication of an amorphous silicon film, for example, by the CVD method, followed by exposure to a hydrogen plasma for set period of time.
摘要翻译： PCT No.PCT / JP92 / 01491 Sec。 371日期：1993年7月12日 102（e）日期1993年7月12日PCT 1991年11月16日PCT PCT。公开号WO93 / 10555 日期：1993年5月27日。一种氢含量为5原子％以下的多晶硅薄膜，其可以在廉价的玻璃基板（3）如苏打玻璃或玻璃基板（3）上制造，所述玻璃基板（3）金属电极或透明电极。可以通过使用多次重复的制造非晶硅膜的方法，例如通过CVD方法，然后暴露于氢等离子体设定的时间段，在这样的温度下制造多晶硅薄膜。

9. 发明授权

US4985850A Output apparatus 失效
标题翻译：输出装置
公开(公告)号：US4985850A
公开(公告)日：1991-01-15
申请号：US321395
申请日：1989-03-10
申请人： Yoshifumi Okamoto
发明人： Yoshifumi Okamoto
IPC分类号： B41J2/525 , G06K15/00 , G06K15/12
CPC分类号： G06K15/129 , G06K15/00 , G06K15/128 , G06K2215/0094
摘要： There is provided an output apparatus comprising: a 1st memory to store the print information of the 1st color; a 2nd memory which stores the print information of the 2nd color and has the same address arrangement as that of the 1st memory; a CPU as a reading device for allowing the print information of the 1st and 2nd colors to be simultaneously read out of the 1st and 2nd memories synchronously with the print timing for the 1st-color print information; and a timing adjusting circuit for delaying the print timing for the readout 2nd-color print information than the print timing for the 1st-color print information by a predetermined time. The 2nd-color print information is temporarily stored into the 2nd memory consisting of an RAM or buffer memory and is read out therefrom after the print of the 1st-color print information. With the apparatus, the number of access reading times is reduced and the access timings for the memories can be easily adjusted by the single operation.
摘要翻译：提供了一种输出装置，包括：第一存储器，用于存储第一颜色的打印信息; 第二存储器，其存储第二颜色的打印信息，并且具有与第一存储器相同的地址排列; CPU作为读取装置，用于与第一色印刷信息的打印定时同步地从第一和第二存储器同时读出第一和第二颜色的打印信息; 以及定时调整电路，用于将读出的第二色打印信息的打印定时延迟预定时间的第一色打印信息的打印定时。第二色打印信息被临时存储到由RAM或缓冲存储器组成的第二存储器中，并且在打印第一色打印信息之后从其读出。利用该装置，访问读取次数减少，并且可以通过单次操作容易地调整存储器的访问定时。

10. 发明授权

US06667812B1 Information processing apparatus with device control language based program selection 失效
标题翻译：具有设备控制语言的程序选择的信息处理设备
公开(公告)号：US06667812B1
公开(公告)日：2003-12-23
申请号：US08076785
申请日：1993-06-15
申请人： Nobuhiko Sato , Satoshi Nagata , Yoshifumi Okamoto , Tetsuya Morita , Akihiro Shimura , Shunya Mitsuhashi , Takanori Nishijima , Masaki Unishi
发明人： Nobuhiko Sato , Satoshi Nagata , Yoshifumi Okamoto , Tetsuya Morita , Akihiro Shimura , Shunya Mitsuhashi , Takanori Nishijima , Masaki Unishi
IPC分类号： G06K1500
CPC分类号： G06F3/1204 , G06F3/1206 , G06F3/1224 , G06F3/1226 , G06F3/1232 , G06F3/1244 , G06F3/1284
摘要： An information processing apparatus acquires identification information which specifies an interpreting program for interpreting a device control language, the specified interpreting program being operable in an external device connected to the information processing apparatus. It is discriminated whether a selected first control program corresponds to the device control language interpreted by the specified interpreting program. If it is discriminated that the selected first control program does not correspond to the device control language interpreted by the specified interpreting program, a second control program corresponding to the device control language interpreted by the specified interpreting program is selected from a plurality of control programs. Data is output to the external device using the first control program or, if it is discriminated that the first control program does not correspond to the device control language, the selected second control program.
摘要翻译：信息处理设备获取指定用于解释设备控制语言的解释程序的识别信息，所指定的解释程序可在连接到信息处理设备的外部设备中操作。鉴别所选择的第一控制程序是否对应于由指定解释程序解释的设备控制语言。如果识别出所选择的第一控制程序与由指定的解释程序解释的设备控制语言不对应，则从多个控制程序中选择与由指定的解释程序解释的设备控制语言相对应的第二控制程序。使用第一控制程序将数据输出到外部设备，或者如果识别出第一控制程序不对应于设备控制语言，则选择的第二控制程序。

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