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1. 发明授权

US07847186B2 Silicon based thin film solar cell 有权
标题翻译：硅基薄膜太阳能电池
公开(公告)号：US07847186B2
公开(公告)日：2010-12-07
申请号：US10563009
申请日：2004-07-12
申请人： Toru Sawada , Yohei Koi , Toshiaki Sasaki , Masashi Yoshimi , Masahiro Goto , Kenji Yamamoto
发明人： Toru Sawada , Yohei Koi , Toshiaki Sasaki , Masashi Yoshimi , Masahiro Goto , Kenji Yamamoto
IPC分类号： H01L31/00
CPC分类号： H01L31/077 , H01L31/056 , H01L31/075 , H01L31/076 , Y02E10/52 , Y02E10/548
摘要： According to the present invention, sufficient light trapping effect can be exhibited and series resistance can be kept small, by sequentially forming a silicon based low refractive index layer and a thin silicon based interface layer on a backside of a photoelectric conversion layer observed from a light incident side, and as a result a silicon based thin film solar cell may be provided efficiently and at low cost.
摘要翻译：根据本发明，通过从光线观察到的光电转换层的背面顺序地形成硅基低折射率层和薄硅基界面层，可以发挥足够的光捕获效果并且串联电阻较小因此，可以以低成本有效地提供硅基薄膜太阳能电池。

2. 发明授权

US07550665B2 Stacked photoelectric converter 有权
标题翻译：堆叠光电转换器
公开(公告)号：US07550665B2
公开(公告)日：2009-06-23
申请号：US10530283
申请日：2004-07-15
申请人： Toshiaki Sasaki , Yohei Koi , Kenji Yamamoto , Masashi Yoshimi , Mitsuru Ichikawa
发明人： Toshiaki Sasaki , Yohei Koi , Kenji Yamamoto , Masashi Yoshimi , Mitsuru Ichikawa
IPC分类号： H01L31/00 , H02N6/00
CPC分类号： H01L31/077 , H01L31/056 , H01L31/076 , Y02E10/52 , Y02E10/548
摘要： In a stacked-layer type photoelectric conversion device, a plurality of photoelectric conversion units are stacked on a substrate, each of which includes a one conductivity-type layer, a photoelectric conversion layer of substantially intrinsic semiconductor and an opposite conductivity-type layer in this order from a light-incident side. At least one of the opposite conductivity-type layer in a front photoelectric conversion unit arranged relatively closer to the light-incident side and the one conductivity-type layer in a back photoelectric conversion unit arranged adjacent to the front photoelectric conversion unit includes a silicon composite layer at least in a part thereof. The silicon composite layer has a thickness of more than 20 nm and less than 130 nm and an oxygen concentration of more than 25 atomic % and less than 60 atomic %, and includes silicon-rich phase parts in an amorphous alloy phase of silicon and oxygen.
摘要翻译：在堆叠层型光电转换装置中，在基板上层叠多个光电转换单元，每个基板包括一个导电型层，本质上为半导体的光电转换层和相反的导电型层从光线一方的命令。在与前光电转换单元相邻布置的背光电转换单元中相对靠近光入射侧的前光电转换单元中的至少一个导电类型层和一个导电型层中的至少一个包括硅复合物至少在其一部分。硅复合层的厚度大于20nm且小于130nm，氧浓度大于25原子％且小于60原子％，并且包括在硅和氧的非晶合金相中的富硅相部分。

3. 发明授权

US08691613B2 Method for manufacturing photoelectric conversion device 有权
标题翻译：制造光电转换装置的方法
公开(公告)号：US08691613B2
公开(公告)日：2014-04-08
申请号：US13877148
申请日：2011-08-31
申请人： Masashi Yoshimi , Mitsuru Ichikawa , Toshihiko Uto , Kenji Yamamoto
发明人： Masashi Yoshimi , Mitsuru Ichikawa , Toshihiko Uto , Kenji Yamamoto
IPC分类号： H01L21/00
CPC分类号： H01L31/18 , H01L31/0684 , H01L31/0747 , H01L31/1804 , H01L31/1868 , Y02E10/547 , Y02P70/521
摘要： A crystalline-based silicon photoelectric conversion device comprises: an intrinsic silicon-based layer and a silicon-based layer of a first conductivity type, on one surface of a single-crystal silicon substrate of the first conductivity type; and an intrinsic silicon-based and a silicon-based layer of an opposite conductivity type, in this order on the other surface of the silicon substrate. At least one of forming the intrinsic silicon-based layer of the first conductivity type layer-side forming the intrinsic silicon-based layer of the opposite conductivity type layer-side includes: forming a first intrinsic silicon-based thin-film layer having a thickness of 1-10 nm on the silicon substrate; plasma-treating the silicon substrate in a gas containing mainly hydrogen; and forming a second intrinsic silicon-based thin-film layer on the first intrinsic silicon-based thin-film.
摘要翻译：晶体硅光电转换装置包括：在第一导电类型的单晶硅衬底的一个表面上的本征硅基层和第一导电类型的硅基层; 以及相反导电类型的本征硅基和硅基层，依次在硅衬底的另一表面上。形成形成相反导电型层侧的本征硅基层的第一导电型层侧的本征硅基层中的至少一个包括：形成具有厚度的第一本征硅基薄膜层在硅衬底上为1-10nm; 在主要包含氢气的气体中等离子体处理硅衬底; 以及在所述第一本征硅基薄膜上形成第二本征硅基薄膜层。

4. 发明申请

US20130210185A1 METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE 有权
标题翻译：制造光电转换装置的方法
公开(公告)号：US20130210185A1
公开(公告)日：2013-08-15
申请号：US13877148
申请日：2011-08-31
申请人： Masashi Yoshimi , Mitsuru Ichikawa , Toshihiko Uto , Kenji Yamamoto
发明人： Masashi Yoshimi , Mitsuru Ichikawa , Toshihiko Uto , Kenji Yamamoto
IPC分类号： H01L31/18
CPC分类号： H01L31/18 , H01L31/0684 , H01L31/0747 , H01L31/1804 , H01L31/1868 , Y02E10/547 , Y02P70/521
摘要： A crystalline-based silicon photoelectric conversion device comprises: an intrinsic silicon-based layer and a silicon-based layer of a first conductivity type, on one surface of a single-crystal silicon substrate of the first conductivity type; and an intrinsic silicon-based and a silicon-based layer of an opposite conductivity type, in this order on the other surface of the silicon substrate. At least one of forming the intrinsic silicon-based layer of the first conductivity type layer-side forming the intrinsic silicon-based layer of the opposite conductivity type layer-side includes: forming a first intrinsic silicon-based thin-film layer having a thickness of 1-10 nm on the silicon substrate; plasma-treating the silicon substrate in a gas containing mainly hydrogen; and forming a second intrinsic silicon-based thin-film layer on the first intrinsic silicon-based thin-film.
摘要翻译：晶体硅光电转换装置包括：在第一导电类型的单晶硅衬底的一个表面上的本征硅基层和第一导电类型的硅基层; 以及相反导电类型的本征硅基和硅基层，依次在硅衬底的另一表面上。形成形成相反导电型层侧的本征硅基层的第一导电型层侧的本征硅基层中的至少一个包括：形成具有厚度的第一本征硅基薄膜层在硅衬底上为1-10nm; 在主要包含氢气的气体中等离子体处理硅衬底; 以及在所述第一本征硅基薄膜上形成第二本征硅基薄膜层。

5. 发明授权

US07238545B2 Method for fabricating tandem thin film photoelectric converter 有权
标题翻译：串联薄膜光电转换器的制造方法
公开(公告)号：US07238545B2
公开(公告)日：2007-07-03
申请号：US10508044
申请日：2003-04-02
申请人： Masashi Yoshimi , Takashi Suezaki , Kenji Yamamoto
发明人： Masashi Yoshimi , Takashi Suezaki , Kenji Yamamoto
IPC分类号： H01L21/00
CPC分类号： H01L31/076 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： A method of manufacturing a tandem-type thin film photoelectric conversion device includes the steps of forming at least one photoelectric conversion unit (3) on a substrate (1) in a deposition apparatus, taking out the substrate (1) having the photoelectric conversion unit (3) from the deposition apparatus to the air, introducing the substrate (1) into a deposition apparatus and carrying out plasma exposure processing on the substrate (1) in an atmosphere of a gas mixture containing an impurity for determining the conductivity type of the same conductivity type as that of the uppermost conductivity type layer (33) and hydrogen, forming a conductivity type intermediate layer (5) by additionally supplying semiconductor raw gas to the deposition apparatus, and then forming a subsequent photoelectric conversion unit (4).
摘要翻译：制造串联型薄膜光电转换装置的方法包括以下步骤：在沉积装置中在基板（1）上形成至少一个光电转换单元（3），取出具有光电转换单元的基板（1）（3）从沉积设备到空气中，将基板（1）引入沉积设备中，并在含有杂质的气体混合物的气氛中对基板（1）进行等离子体曝光处理，以确定导电类型通过向沉积设备另外提供半导体原料气体，然后形成后续的光电转换单元（4），形成导电型中间层（5），与最上面的导电型层（33）和氢的导电类型相同。

6. 发明申请

US20060174935A1 Silicon based thin film solar cell 有权
标题翻译：硅基薄膜太阳能电池
公开(公告)号：US20060174935A1
公开(公告)日：2006-08-10
申请号：US10563009
申请日：2004-07-12
申请人： Toru Sawada , Yohel Koi , Toshiaki Sasaki , Masashi Yoshimi , Masahiro Goto , Kenji Yamamoto
发明人： Toru Sawada , Yohel Koi , Toshiaki Sasaki , Masashi Yoshimi , Masahiro Goto , Kenji Yamamoto
IPC分类号： H01L31/00
CPC分类号： H01L31/077 , H01L31/056 , H01L31/075 , H01L31/076 , Y02E10/52 , Y02E10/548
摘要： According to the present invention, sufficient light trapping effect can be exhibited and series resistance can be kept small, by sequentially forming a silicon based low refractive index layer and a thin silicon based interface layer on a backside of a photoelectric conversion layer observed from a light incident side, and as a result a silicon based thin film solar cell may be provided efficiently and at low cost.
摘要翻译：根据本发明，通过从光线观察到的光电转换层的背面顺序地形成硅基低折射率层和薄硅基界面层，可以发挥足够的光捕获效果并且串联电阻较小因此，可以以低成本有效地提供硅基薄膜太阳能电池。

7. 发明申请

US20050181534A1 Method for fabricating tandem thin film photoelectric converter 有权
标题翻译：串联薄膜光电转换器的制造方法
公开(公告)号：US20050181534A1
公开(公告)日：2005-08-18
申请号：US10508044
申请日：2003-04-02
申请人： Masashi Yoshimi , Takashi Suezaki , Kenji Yamamoto
发明人： Masashi Yoshimi , Takashi Suezaki , Kenji Yamamoto
IPC分类号： H01L31/075 , H01L21/00 , H01L31/076 , H01L31/20
CPC分类号： H01L31/076 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： A method of manufacturing a tandem-type thin film photoelectric conversion device includes the steps of forming at least one photoelectric conversion unit (3) on a substrate (1) in a deposition apparatus, taking out the substrate (1) having the photoelectric conversion unit (3) from the deposition apparatus to the air, introducing the substrate (1) into a deposition apparatus and carrying out plasma exposure processing on the substrate (1) in an atmosphere of a gas mixture containing an impurity for determining the conductivity type of the same conductivity type as that of the uppermost conductivity type layer (33) and hydrogen, forming a conductivity type intermediate layer (5) by additionally supplying semiconductor raw gas to the deposition apparatus, and then forming a subsequent photoelectric conversion unit (4).
摘要翻译：制造串联型薄膜光电转换装置的方法包括以下步骤：在沉积装置中在基板（1）上形成至少一个光电转换单元（3），取出具有光电转换单元的基板（1）（3）从沉积设备到空气中，将基板（1）引入沉积设备中，并在含有杂质的气体混合物的气氛中对基板（1）进行等离子体曝光处理，以确定导电类型通过向沉积设备另外提供半导体原料气体，然后形成后续的光电转换单元（4），形成导电型中间层（5），与最上面的导电型层（33）和氢的导电类型相同。

8. 发明授权

US06297443B1 Thin film photoelectric transducer 有权
标题翻译：薄膜光电传感器
公开(公告)号：US06297443B1
公开(公告)日：2001-10-02
申请号：US09269400
申请日：1999-03-26
申请人： Akihiko Nakajima , Masashi Yoshimi , Takayuki Suzuki , Kenji Yamamoto
发明人： Akihiko Nakajima , Masashi Yoshimi , Takayuki Suzuki , Kenji Yamamoto
IPC分类号： H01L310368
CPC分类号： H01L31/076 , H01L31/02363 , H01L31/02366 , H01L31/056 , H01L31/075 , Y02E10/52 , Y02E10/548
摘要： A thin film photoelectric converter includes a polycrystalline photoelectric conversion layer (4) and a metal thin film (3) covering one main surface of the polycrystalline photoelectric layer. Polycrystalline photoelectric conversion layer (4) has an average thickness in the range from 0.5 to 20 &mgr;m and at least one of main surfaces of polycrystalline photoelectric conversion layer (4) has a textured surface structure. The textured structure has fine unevenness with level differences smaller than half of the thickness of polycrystalline photoelectric conversion layer (4) and substantially in the range from 0.05 to 3 &mgr;m.
摘要翻译：薄膜光电转换器包括多晶光电转换层（4）和覆盖多晶光电层的一个主表面的金属薄膜（3）。多晶光电转换层（4）的平均厚度为0.5〜20μm，多晶光电转换层（4）的至少一个主表面具有纹理表面结构。纹理结构具有微小的不均匀性，其水平差小于多晶光电转换层（4）的厚度的一半，并且基本上在0.05至3μm的范围内。

9. 发明授权

US06200825B1 Method of manufacturing silicon based thin film photoelectric conversion device 有权
标题翻译：硅基薄膜光电转换装置的制造方法
公开(公告)号：US06200825B1
公开(公告)日：2001-03-13
申请号：US09390083
申请日：1999-09-03
申请人： Masashi Yoshimi , Yoshifumi Okamoto , Kenji Yamamoto
发明人： Masashi Yoshimi , Yoshifumi Okamoto , Kenji Yamamoto
IPC分类号： H01L2100
CPC分类号： C23C16/24 , C23C16/45523 , C23C16/45557 , C23C16/50 , C23C16/54 , H01L31/0747 , H01L31/075 , H01L31/076 , H01L31/1804 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A p type semiconductor layer, an i type crystalline (polycrystalline, microcrystalline) photoelectric conversion layer, and an n type semiconductor layer are successively formed in the same plasma CVD deposition chamber. The p type semiconductor layer is produced on condition that the pressure in the deposition chamber is at least 5 Torr. Accordingly, a silicon-based thin film photoelectric conversion device having the p type semiconductor layer, the i type crystalline photoelectric conversion layer, and the n type semiconductor layer stacked on each other is manufactured. A method of manufacturing a silicon-based thin film photoelectric conversion device is thus implemented to produce a photoelectric conversion device having a superior performance and quality by a simple apparatus at a low cost and with high productivity.
摘要翻译：在相同的等离子体CVD沉积室中依次形成p型半导体层，i型结晶（多晶，微晶）光电转换层和n型半导体层。在沉积室中的压力至少为5托的条件下制备p型半导体层。因此，制造了具有堆叠在p型半导体层，i型晶体光电转换层和n型半导体层的硅基薄膜光电转换装置。因此，制造硅基薄膜光电转换装置的方法通过简单的装置以低成本和高生产率制造具有优异性能和质量的光电转换装置。

10. 发明申请

US20130146132A1 CRYSTALLINE SILICON-BASED SOLAR CELL 审中-公开
标题翻译：晶体硅基太阳能电池
公开(公告)号：US20130146132A1
公开(公告)日：2013-06-13
申请号：US13816216
申请日：2011-08-03
申请人： Takashi Kuchiyama , Kenji Yamamoto , Masashi Yoshimi
发明人： Takashi Kuchiyama , Kenji Yamamoto , Masashi Yoshimi
IPC分类号： H01L31/0224
CPC分类号： H01L31/022466 , H01L31/022475 , H01L31/0747 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： The present invention improves a photoelectric conversion efficiency of a crystalline silicon-based solar cell. The crystalline silicon based solar cell includes a silicon-based thin-film of a first conductivity type and a first transparent electrode layer, in this order, on one surface of a conductive single-crystal silicon substrate, and a silicon-based thin-film of the opposite conductivity type and a second transparent electrode layer, in this order, on the other surface of the conductive single-crystal silicon substrate. The first and second transparent electrode layers are each formed of a transparent conductive metal oxide, and the first transparent electrode layer preferably has at least two layers, and a total thickness of 50 to 120 nm, wherein the carrier density of the substrate-side electroconductive layer is higher than that of the surface-side electroconductive layer, and the carrier density of the surface-side electroconductive layer is 1 to 4×1020 cm−3.
摘要翻译：本发明提高了晶体硅系太阳能电池的光电转换效率。晶体硅基太阳能电池包括在导电单晶硅衬底的一个表面上的第一导电类型的硅基薄膜和第一透明电极层，以及硅基薄膜的第二透明电极层，依次形成在导电性单晶硅基板的另一面上。第一透明电极层和第二透明电极层各自由透明导电性金属氧化物形成，第一透明电极层优选具有至少两层，总厚度为50〜120nm，其中基板侧导电性的载流子密度层比表面侧导电层高，表面侧导电层的载流子密度为1〜4×1020cm-3。

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