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1. 发明授权

US06337224B1 Method of producing silicon thin-film photoelectric transducer and plasma CVD apparatus used for the method 有权
标题翻译：生产用于该方法的硅薄膜光电转换器和等离子体CVD装置的方法
公开(公告)号：US06337224B1
公开(公告)日：2002-01-08
申请号：US09554164
申请日：2000-05-10
申请人： Yoshifumi Okamoto , Masashi Yoshimi , Kenji Yamamoto
发明人： Yoshifumi Okamoto , Masashi Yoshimi , Kenji Yamamoto
IPC分类号： H01L2100
CPC分类号： H01L31/076 , H01L31/03685 , H01L31/077 , H01L31/182 , H01L31/206 , Y02E10/545 , Y02E10/546 , Y02E10/548 , Y02P70/521 , Y10S438/935
摘要： In a method of manufacturing a silicon-based thin film photoelectric converter, a crystalline photoelectric conversion layer included in the photoelectric converter is deposited by plasma CVD under the following conditions: the temperature of the underlying film is at most 550° C.; a gas introduced into a plasma reaction chamber has a silane-based gas and a hydrogen gas where the flow rate of the hydrogen gas relative to the silane-based gas is at least 50 times; the pressure in the plasma reaction chamber is set to 3 Torr; and the deposition speed is 17 nm/min in the thickness-wise direction.
摘要翻译：在制造硅基薄膜光电转换器的方法中，包括在光电转换器中的晶体光电转换层在以下条件下通过等离子体CVD沉积：底层膜的温度至多为550℃。引入等离子体反应室的气体具有硅烷系气体和氢气，氢气相对于硅烷系气体的流量为50倍以上，等离子体反应室中的压力设定为3乇; 并且沉积速度在厚度方向上为17nm / min。

2. 发明授权

US06200825B1 Method of manufacturing silicon based thin film photoelectric conversion device 有权
标题翻译：硅基薄膜光电转换装置的制造方法
公开(公告)号：US06200825B1
公开(公告)日：2001-03-13
申请号：US09390083
申请日：1999-09-03
申请人： Masashi Yoshimi , Yoshifumi Okamoto , Kenji Yamamoto
发明人： Masashi Yoshimi , Yoshifumi Okamoto , Kenji Yamamoto
IPC分类号： H01L2100
CPC分类号： C23C16/24 , C23C16/45523 , C23C16/45557 , C23C16/50 , C23C16/54 , H01L31/0747 , H01L31/075 , H01L31/076 , H01L31/1804 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A p type semiconductor layer, an i type crystalline (polycrystalline, microcrystalline) photoelectric conversion layer, and an n type semiconductor layer are successively formed in the same plasma CVD deposition chamber. The p type semiconductor layer is produced on condition that the pressure in the deposition chamber is at least 5 Torr. Accordingly, a silicon-based thin film photoelectric conversion device having the p type semiconductor layer, the i type crystalline photoelectric conversion layer, and the n type semiconductor layer stacked on each other is manufactured. A method of manufacturing a silicon-based thin film photoelectric conversion device is thus implemented to produce a photoelectric conversion device having a superior performance and quality by a simple apparatus at a low cost and with high productivity.
摘要翻译：在相同的等离子体CVD沉积室中依次形成p型半导体层，i型结晶（多晶，微晶）光电转换层和n型半导体层。在沉积室中的压力至少为5托的条件下制备p型半导体层。因此，制造了具有堆叠在p型半导体层，i型晶体光电转换层和n型半导体层的硅基薄膜光电转换装置。因此，制造硅基薄膜光电转换装置的方法通过简单的装置以低成本和高生产率制造具有优异性能和质量的光电转换装置。

3. 发明授权

US06265288B1 Method of manufacturing silicon-based thin-film photoelectric conversion device 有权
标题翻译：硅基薄膜光电转换装置的制造方法
公开(公告)号：US06265288B1
公开(公告)日：2001-07-24
申请号：US09390085
申请日：1999-09-03
申请人： Yoshifumi Okamoto , Masashi Yoshimi
发明人： Yoshifumi Okamoto , Masashi Yoshimi
IPC分类号： H01L2120
CPC分类号： H01L21/02422 , H01L21/02425 , H01L21/0245 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L31/075 , H01L31/182 , H01L31/1824 , Y02E10/545 , Y02E10/546 , Y02E10/548 , Y02P70/521
摘要： A method of fabricating a silicon-based thin-film photoelectric conversion device, where a plasma CVD process is used to deposit a polycrystalline photoelectric conversion layer. During the deposition of the photoelectric conversion layer, the temperature of the underlying layer is less than 550° C., the pressure in the plasma chamber is more than 5 Torr, and the ratio of the flow rates of a hydrogen gas and a silane-type gas is more than 50. In addition, one of the following operations is carried out during the deposition to change the relevant parameters between the start and end of the deposition. First, the distance between the plasma discharge electrodes is increased gradually or in steps. Second, the pressure of the reaction chamber is increased gradually or in steps. Third, the flow rate of the silane-type gas is increased gradually. Fourth, the plasma discharge power density is reduced gradually or in steps.
摘要翻译：一种制造硅基薄膜光电转换装置的方法，其中使用等离子体CVD工艺沉积多晶光电转换层。在光电转换层的沉积期间，下层的温度低于550℃，等离子体室内的压力大于5Torr，氢气与硅烷 - 型气体大于50.此外，在沉积期间进行以下操作之一以改变沉积开始和结束之间的相关参数。首先，等离子体放电电极之间的距离逐渐或逐步增加。第二，反应室的压力逐渐增加或逐步增加。三是硅烷型气体的流量逐渐增加。第四，等离子体放电功率密度逐渐或逐步降低。

4. 发明授权

US06190932B1 Method of manufacturing tandem type thin film photoelectric conversion device 有权
标题翻译：制造串联型薄膜光电转换装置的方法
公开(公告)号：US06190932B1
公开(公告)日：2001-02-20
申请号：US09389514
申请日：1999-09-03
申请人： Masashi Yoshimi , Yoshifumi Okamoto
发明人： Masashi Yoshimi , Yoshifumi Okamoto
IPC分类号： H01L2100
CPC分类号： H01L31/076 , H01L31/077 , H01L31/206 , Y02E10/548 , Y02P70/521
摘要： A p type semiconductor layer, an i type amorphous photoelectric conversion layer and an n type semiconductor layer of an amorphous type photoelectric conversion unit are formed in separate deposition chambers, respectively. A p type semiconductor layer, an i type crystalline photoelectric conversion layer and an n type semiconductor layer of crystalline type photoelectric conversion unit are formed continuously in one deposition chamber. Accordingly, a method of manufacturing a tandem type thin film photoelectric conversion device is obtained by which a tandem type thin film photoelectric conversion device having superior performance and high quality can be formed by a simple apparatus at a low cost with superior productivity.
摘要翻译：在分离的沉积室中分别形成p型半导体层，i型非晶型光电转换层和非晶型光电转换单元的n型半导体层。在一个沉积室中连续地形成p型半导体层，i型晶体光电转换层和n型半导体晶体型光电转换单元。因此，制造串联型薄膜光电转换装置的方法是通过简单的装置以低成本形成具有优异性能和高质量的串联型薄膜光电转换装置，具有优异的生产率。

5. 发明申请

US20060097259A1 Thin-film photoelectric converter 有权
标题翻译：薄膜光电转换器
公开(公告)号：US20060097259A1
公开(公告)日：2006-05-11
申请号：US10543516
申请日：2004-05-28
申请人： Takashi Suezaki , Masashi Yoshimi , Toshiaki Sasaki , Yuko Tawada , Kenji Yamamoto
发明人： Takashi Suezaki , Masashi Yoshimi , Toshiaki Sasaki , Yuko Tawada , Kenji Yamamoto
IPC分类号： H01L29/76 , H01L29/10
CPC分类号： H01L31/076 , H01L31/046 , Y02E10/548
摘要： A thin film photoelectric converter, especially an integrated thin film photoelectric converter having improved photoelectric conversion efficiency is provided by controlling an open-circuit voltage and a fill factor so as not be small in a thin film photoelectric converter including a crystalline silicon photoelectric conversion unit. The thin film photoelectric converter by the present invention has at least a transparent electrode film, a crystalline silicon photoelectric conversion unit, and a back electrode film formed sequentially on one principal surface of a transparent substrate, and the converter has a whitish discoloring area on a part of a surface of the converter after formation of the crystalline silicon photoelectric conversion unit. A percentage of dimensions of the whitish discoloring area preferably is not more than 5% of a dimension of the photoelectric conversion area. A thin film photoelectric converter of the present invention is preferably an integrated thin film photoelectric converter.
摘要翻译：通过在包括晶体硅光电转换单元的薄膜光电转换器中控制开路电压和填充因子以不小而提供薄膜光电转换器，特别是具有改进的光电转换效率的集成薄膜光电转换器。本发明的薄膜光电转换器至少在透明基板的一个主表面上依次形成透明电极膜，晶体硅光电转换单元和背面电极膜，并且转换器具有白色变色区域形成晶体硅光电转换单元后的转换器表面的一部分。白色变色区域的尺寸的百分比优选不大于光电转换区域的尺寸的5％。本发明的薄膜光电转换器优选为集成薄膜光电转换器。

6. 发明申请

US20060043517A1 Stacked photoelectric converter 有权
公开(公告)号：US20060043517A1
公开(公告)日：2006-03-02
申请号：US10530283
申请日：2004-07-15
申请人： Toshiaki Sasaki , Yohei Koi , Kenji Yamamoto , Masashi Yoshimi , Mitsuru Ichikawa
发明人： Toshiaki Sasaki , Yohei Koi , Kenji Yamamoto , Masashi Yoshimi , Mitsuru Ichikawa
IPC分类号： H01L31/105
CPC分类号： H01L31/077 , H01L31/056 , H01L31/076 , Y02E10/52 , Y02E10/548
摘要： In a stacked-layer type photoelectric conversion device, a plurality of photoelectric conversion units are stacked on a substrate, each of which includes a one conductivity-type layer, a photoelectric conversion layer of substantially intrinsic semiconductor and an opposite conductivity-type layer in this order from a light-incident side. At least one of the opposite conductivity-type layer in a front photoelectric conversion unit arranged relatively closer to the light-incident side and the one conductivity-type layer in a back photoelectric conversion unit arranged adjacent to the front photoelectric conversion unit includes a silicon composite layer at least in a part thereof. The silicon composite layer has a thickness of more than 20 nm and less than 130 nm and an oxygen concentration of more than 25 atomic % and less than 60 atomic %, and includes silicon-rich phase parts in an amorphous alloy phase of silicon and oxygen.

7. 发明授权

US06187150B1 Method for manufacturing thin film photovoltaic device 有权
标题翻译：制造薄膜光伏器件的方法
公开(公告)号：US06187150B1
公开(公告)日：2001-02-13
申请号：US09414092
申请日：1999-10-07
申请人： Masashi Yoshimi , Kenji Yamamoto
发明人： Masashi Yoshimi , Kenji Yamamoto
IPC分类号： C23C1408
CPC分类号： H01L31/1884 , H01L31/056 , H01L31/075 , Y02E10/52 , Y02E10/548
摘要： A method for manufacturing a thin film photovoltaic device comprising a transparent conductive film, a thin film photovoltaic unit, and a back transparent conductive film and a back metal electrode which are successively formed on a substrate, wherein the back transparent conductive film is formed by sputtering comprising steps of forming an initial back transparent conductive film under a pressure of 5×10−2 Torr or more for 1 to 30 seconds in the initial stage and forming a main back transparent conductive film having the remainder thickness under a pressure reduced to {fraction (1/10)} the initial pressure or less.
摘要翻译：一种薄膜光伏器件的制造方法，其特征在于，在基板上依次形成有透明导电膜，薄膜光电单元，背面透明导电膜和背面金属电极，其中，所述背面透明导电膜通过溅射形成包括在初始阶段在5×10 -2 Torr以上的压力下形成初始背面透明导电膜1〜30秒的步骤，并且在压力降低到{部分（1）的情况下形成剩余厚度的主背面透明导电膜 / 10）}初始压力或更小。

8. 发明授权

US07847186B2 Silicon based thin film solar cell 有权
标题翻译：硅基薄膜太阳能电池
公开(公告)号：US07847186B2
公开(公告)日：2010-12-07
申请号：US10563009
申请日：2004-07-12
申请人： Toru Sawada , Yohei Koi , Toshiaki Sasaki , Masashi Yoshimi , Masahiro Goto , Kenji Yamamoto
发明人： Toru Sawada , Yohei Koi , Toshiaki Sasaki , Masashi Yoshimi , Masahiro Goto , Kenji Yamamoto
IPC分类号： H01L31/00
CPC分类号： H01L31/077 , H01L31/056 , H01L31/075 , H01L31/076 , Y02E10/52 , Y02E10/548
摘要： According to the present invention, sufficient light trapping effect can be exhibited and series resistance can be kept small, by sequentially forming a silicon based low refractive index layer and a thin silicon based interface layer on a backside of a photoelectric conversion layer observed from a light incident side, and as a result a silicon based thin film solar cell may be provided efficiently and at low cost.
摘要翻译：根据本发明，通过从光线观察到的光电转换层的背面顺序地形成硅基低折射率层和薄硅基界面层，可以发挥足够的光捕获效果并且串联电阻较小因此，可以以低成本有效地提供硅基薄膜太阳能电池。

9. 发明授权

US07550665B2 Stacked photoelectric converter 有权
标题翻译：堆叠光电转换器
公开(公告)号：US07550665B2
公开(公告)日：2009-06-23
申请号：US10530283
申请日：2004-07-15
申请人： Toshiaki Sasaki , Yohei Koi , Kenji Yamamoto , Masashi Yoshimi , Mitsuru Ichikawa
发明人： Toshiaki Sasaki , Yohei Koi , Kenji Yamamoto , Masashi Yoshimi , Mitsuru Ichikawa
IPC分类号： H01L31/00 , H02N6/00
CPC分类号： H01L31/077 , H01L31/056 , H01L31/076 , Y02E10/52 , Y02E10/548
摘要： In a stacked-layer type photoelectric conversion device, a plurality of photoelectric conversion units are stacked on a substrate, each of which includes a one conductivity-type layer, a photoelectric conversion layer of substantially intrinsic semiconductor and an opposite conductivity-type layer in this order from a light-incident side. At least one of the opposite conductivity-type layer in a front photoelectric conversion unit arranged relatively closer to the light-incident side and the one conductivity-type layer in a back photoelectric conversion unit arranged adjacent to the front photoelectric conversion unit includes a silicon composite layer at least in a part thereof. The silicon composite layer has a thickness of more than 20 nm and less than 130 nm and an oxygen concentration of more than 25 atomic % and less than 60 atomic %, and includes silicon-rich phase parts in an amorphous alloy phase of silicon and oxygen.
摘要翻译：在堆叠层型光电转换装置中，在基板上层叠多个光电转换单元，每个基板包括一个导电型层，本质上为半导体的光电转换层和相反的导电型层从光线一方的命令。在与前光电转换单元相邻布置的背光电转换单元中相对靠近光入射侧的前光电转换单元中的至少一个导电类型层和一个导电型层中的至少一个包括硅复合物至少在其一部分。硅复合层的厚度大于20nm且小于130nm，氧浓度大于25原子％且小于60原子％，并且包括在硅和氧的非晶合金相中的富硅相部分。

10. 发明申请

US20130146132A1 CRYSTALLINE SILICON-BASED SOLAR CELL 审中-公开
标题翻译：晶体硅基太阳能电池
公开(公告)号：US20130146132A1
公开(公告)日：2013-06-13
申请号：US13816216
申请日：2011-08-03
申请人： Takashi Kuchiyama , Kenji Yamamoto , Masashi Yoshimi
发明人： Takashi Kuchiyama , Kenji Yamamoto , Masashi Yoshimi
IPC分类号： H01L31/0224
CPC分类号： H01L31/022466 , H01L31/022475 , H01L31/0747 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： The present invention improves a photoelectric conversion efficiency of a crystalline silicon-based solar cell. The crystalline silicon based solar cell includes a silicon-based thin-film of a first conductivity type and a first transparent electrode layer, in this order, on one surface of a conductive single-crystal silicon substrate, and a silicon-based thin-film of the opposite conductivity type and a second transparent electrode layer, in this order, on the other surface of the conductive single-crystal silicon substrate. The first and second transparent electrode layers are each formed of a transparent conductive metal oxide, and the first transparent electrode layer preferably has at least two layers, and a total thickness of 50 to 120 nm, wherein the carrier density of the substrate-side electroconductive layer is higher than that of the surface-side electroconductive layer, and the carrier density of the surface-side electroconductive layer is 1 to 4×1020 cm−3.
摘要翻译：本发明提高了晶体硅系太阳能电池的光电转换效率。晶体硅基太阳能电池包括在导电单晶硅衬底的一个表面上的第一导电类型的硅基薄膜和第一透明电极层，以及硅基薄膜的第二透明电极层，依次形成在导电性单晶硅基板的另一面上。第一透明电极层和第二透明电极层各自由透明导电性金属氧化物形成，第一透明电极层优选具有至少两层，总厚度为50〜120nm，其中基板侧导电性的载流子密度层比表面侧导电层高，表面侧导电层的载流子密度为1〜4×1020cm-3。

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