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1. 发明授权

US5797638A Hoist apparatus for annular member 失效
标题翻译：环形构件提升装置
公开(公告)号：US5797638A
公开(公告)日：1998-08-25
申请号：US822489
申请日：1997-03-24
申请人： Masakazu Yamazaki , Michio Yanaba , Hiroaki Taguchi , Takashi Atami , Hisashi Furuya
发明人： Masakazu Yamazaki , Michio Yanaba , Hiroaki Taguchi , Takashi Atami , Hisashi Furuya
IPC分类号： B66C1/54 , B66C1/66 , C30B15/00 , C30B15/14 , B66C1/62
CPC分类号： C30B15/14 , B66C1/54 , B66C1/66 , C30B15/00
摘要： An annular member hoist apparatus which lifts an annular member and carries and positions the annular member at a predetermined location by a carrier apparatus fitted with an elevator mechanism, including a suspension member suspended from the elevator mechanism, and a plurality of support arms which extend out radially in a horizontal plane from the suspension member. Each of the support arms has an engagement tip portion for supporting the annular member from inside the annular member.
摘要翻译：一种环形构件提升装置，其提升环形构件，并通过装有电梯机构的运载装置将环形构件运送并定位在预定位置，该升降机构包括悬挂在电梯机构上的悬挂构件，以及多个支撑臂，其伸出在悬挂构件的水平面中径向地放置。每个支撑臂具有用于从环形构件内部支撑环形构件的接合末端部分。

2. 发明授权

US5897706A Methods for crucible attachment to support base of single crystal pulling apparatus and support base assembly apparatus and support base employed therein 失效
标题翻译：用于坩埚附着到单晶拉制装置的支撑基座的方法和其中使用的支撑基座组装装置和支撑基座
公开(公告)号：US5897706A
公开(公告)日：1999-04-27
申请号：US834293
申请日：1997-04-15
申请人： Masakazu Yamazaki , Michio Yanaba , Hiroaki Taguchi , Takashi Atami , Hisashi Furuya
发明人： Masakazu Yamazaki , Michio Yanaba , Hiroaki Taguchi , Takashi Atami , Hisashi Furuya
IPC分类号： C30B15/00 , C30B15/10 , C30B15/30 , C30B29/06 , H01L21/208
CPC分类号： C30B15/30 , C30B15/10 , Y10S117/90 , Y10T117/10 , Y10T117/1032 , Y10T117/1052
摘要： An improvement in the safety, ease and speed with which the operation of attaching a crucible 1 to a support base 10 of a single crystal pulling apparatus can be completed is provided. With the method of attaching the crucible 1 to the support base 10, the support base 10 is divided into a support base bottom portion 11 and a support base drum portion 12 which is fitted to the bottom portion 11, and the crucible 1 is mounted on the support base bottom portion 11. The support base 10 is then assembled by fitting the support base drum portion 12 to the support base bottom portion 11.
摘要翻译：提供了可以完成将坩埚1附接到单晶拉制装置的支撑基座10的操作的安全性，容易性和速度的改进。通过将坩埚1安装到支撑基座10上的方法，支撑基座10被分成支撑底部底部11和安装到底部11的支撑基部鼓部分12，坩埚1安装在支撑底部底部11.然后通过将支撑基底鼓部分12装配到支撑基部底部部分11来组装支撑基座10。

3. 发明授权

US5871581A Single crystal pulling apparatus 失效
标题翻译：单晶拉丝机
公开(公告)号：US5871581A
公开(公告)日：1999-02-16
申请号：US781841
申请日：1997-01-10
申请人： Takashi Atami , Hiroaki Taguchi , Hisashi Furuya , Michio Kida
发明人： Takashi Atami , Hiroaki Taguchi , Hisashi Furuya , Michio Kida
IPC分类号： C30B15/02 , C30B15/12 , C30B29/06 , C30B29/42 , H01L21/208 , C30B35/00
CPC分类号： C30B15/12 , C30B15/02 , Y10T117/10 , Y10T117/1052 , Y10T117/1056
摘要： A single crystal pulling apparatus comprising: a gas tight container, a double crucible for storing a semiconductor melt inside the gas tight container comprising an outer crucible and an inner crucible which are connected at a lower edge, and source material supply means for adding source material to the semiconductor melt at a position between the outer crucible and the inner crucible, characterized in that a flow restriction member is provided inside the semiconductor melt region between the outer crucible and the inner crucible for restricting the flow of the semiconductor melt.
摘要翻译：一种单晶拉制装置，包括：气密性容器，用于将密封容器内的半导体熔体储存在包括在下边缘连接的外坩埚和内坩埚的气密容器内的双坩埚，以及源材料供给装置，在外坩埚和内坩埚之间的位置处的半导体熔体，其特征在于，在所述外坩埚和所述内坩埚之间的所述半导体熔融区域的内部设置限流构件，以限制所述半导体熔体的流动。

4. 发明授权

US5840115A Single crystal growth method 失效
标题翻译：单晶生长法
公开(公告)号：US5840115A
公开(公告)日：1998-11-24
申请号：US781818
申请日：1997-01-10
申请人： Hiroaki Taguchi , Takashi Atami , Hisashi Furuya , Michio Kida
发明人： Hiroaki Taguchi , Takashi Atami , Hisashi Furuya , Michio Kida
IPC分类号： C30B15/02 , C30B15/12 , C30B29/06 , C30B29/42 , H01L21/208 , C30B15/04
CPC分类号： C30B15/12 , C30B15/02
摘要： A method of growing a single crystal of semiconductor using a CZ growth technique, having a step (0
摘要翻译：使用CZ生长技术生长半导体单晶的方法，其具有在连续供给源材料以维持恒定量的半导体熔体的同时拉动单晶半导体的步骤（0

5. 发明授权

US5895527A Single crystal pulling apparatus 失效
标题翻译：单晶拉丝机
公开(公告)号：US5895527A
公开(公告)日：1999-04-20
申请号：US791777
申请日：1997-01-29
申请人： Hiroaki Taguchi , Takashi Atami , Hisashi Furuya , Masanori Fukui , Michio Kida
发明人： Hiroaki Taguchi , Takashi Atami , Hisashi Furuya , Masanori Fukui , Michio Kida
IPC分类号： C30B15/02 , C30B15/12 , C30B29/06 , H01L21/208 , C30B35/00
CPC分类号： C30B15/12 , Y10T117/10
摘要： The invention relates to a single crystal pulling apparatus comprising; an outer crucible 11 positioned inside a chamber (gas tight container) 2, for storing a semiconductor melt 21, and an inner crucible 30 comprising a cylindrical partition body, mounted inside the outer crucible 11 to form a double crucible, and wherein a single crystal of semiconductor 26 is pulled from the semiconductor melt 21 stored inside the inner crucible 30. With this arrangement, the inner crucible 30 is made from quartz and comprises an inside layer A, an outside layer C, and an intermediate layer B which lies between the inside layer A and the outside layer C, and the intermediate layer B is made from quartz with a larger gas bubble content than the quartz which makes up the inside layer A and the outside layer C of the inner crucible 30.
摘要翻译：本发明涉及一种单晶拉制装置，包括：位于室（气密容器）2内的用于储存半导体熔体21的外坩埚11和安装在外坩埚11内部以形成双坩埚的圆柱形分隔体的内坩埚30，并且其中单晶半导体26被从存储在内坩埚30内部的半导体熔融物21拉出。由此，内坩埚30由石英制成，包括内层A，外层C和中间层B，内层A和外层C，中间层B由具有比构成内坩埚30的内层A和外层C的石英更大的气泡含量的石英制成。

6. 发明授权

US5891245A Single crystal pulling method and apparatus for its implementation 失效
标题翻译：单晶拉拔方法及其实施方法
公开(公告)号：US5891245A
公开(公告)日：1999-04-06
申请号：US781842
申请日：1997-01-10
申请人： Takashi Atami , Hiroaki Taguchi , Hisashi Furuya , Michio Kida
发明人： Takashi Atami , Hiroaki Taguchi , Hisashi Furuya , Michio Kida
IPC分类号： C30B15/02 , C30B15/12 , C30B35/00
CPC分类号： C30B15/12 , C30B15/02 , Y10T117/1052 , Y10T117/1056
摘要： A single crystal pulling method employing; a gas tight container, a double crucible for storing a semiconductor melt inside the gas tight container comprising an inter-connected outer crucible and inner crucible, and a source material supply tube suspended from an upper portion of the gas tight container and positioned so that a granulated or powdered source material can be added from a lower end opening thereof to the semiconductor melt inside the outer crucible, with the source material being injected into the source material supply tube together with an inert gas flowing towards the enclosed container, characterized in that said source material is injected under conditions where the flow rate N (1/min.multidot.cm.sup.2) of the inert gas is within the range 0.0048P+0.0264
摘要翻译：采用单晶拉制法; 气密容器，用于将半导体熔体储存在气密容器内的双坩埚，其包括相互连接的外坩埚和内坩埚，以及从气密容器的上部悬挂的源材料供给管，颗粒状或粉末状的原料可以从其下端开口加入外坩埚内的半导体熔体，其中源材料与朝向封闭容器流动的惰性气体一起注入源材料供应管中，其特征在于所述在惰性气体的流量N（1 / min×cm 2）在0.0048P + 0.0264

7. 发明授权

US5858087A Single crystal pulling apparatus 失效
标题翻译：单晶拉丝机
公开(公告)号：US5858087A
公开(公告)日：1999-01-12
申请号：US774184
申请日：1996-12-26
申请人： Hiroaki Taguchi , Takashi Atami , Hisashi Furuya , Michio Kida
发明人： Hiroaki Taguchi , Takashi Atami , Hisashi Furuya , Michio Kida
IPC分类号： C30B15/02 , C30B15/12 , C30B35/00
CPC分类号： C30B15/12 , C30B15/02 , Y10T117/1052
摘要： The principal construction of a single crystal pulling apparatus involves a chamber (gas tight chamber) inside of which is a double crucible 3 for storing a semiconductor melt 21, comprising an outer crucible 11 and an inner crucible 12 communicated with each other, and a source material supply tube 5 suspended from an upper portion of the chamber, and positioned so that granular source material 8 can be introduced from a lower end opening 5a thereof into the semiconductor melt 21 between the outer crucible 11 and the inner crucible 12. An incline portion 13 is provided at a lower end of the source material supply tube 5 on the inner crucible 12 side, for introducing source material 8 discharging from the lower end opening 5a to the semiconductor melt 21 in the vicinity of the side wall of the outer crucible 11. The entry point of the source material 8 is as far as possible from the inner crucible 12, and close to the outer wall of the outer crucible 11, and hence the added source material 8 is melted rapidly by heat from a heater surrounding the outer crucible 11, and any gas bubbles generated as a result of the introduction of the source material 8, are unlikely infuse into the inner crucible 12.
摘要翻译：单晶拉制装置的主要结构涉及一个室（气密室），其内部是用于存储半导体熔体21的双坩埚3，其包括彼此连通的外坩埚11和内坩埚12，源材料供给管5从室的上部悬挂，并且定位成使得颗粒状原料8可以从其下端开口5a引入到外坩埚11和内坩埚12之间的半导体熔体21中。倾斜部分在内坩埚12侧的原料供给管5的下端部设置有用于将从下端开口5a排出的原料8引导到外坩埚11的侧壁附近的半导体熔融体21 源材料8的入口点尽可能远离内坩埚12，并且靠近外坩埚11的外壁，因此添加的源配合 rial 8通过来自围绕外坩埚11的加热器的热量迅速熔化，并且由于引入源材料8而产生的任何气泡不太可能注入内坩埚12中。

8. 发明授权

US5843228A Apparatus for preventing heater electrode meltdown in single crystal pulling apparatus 失效
标题翻译：用于防止单晶拉制装置中加热器电极熔化的装置
公开(公告)号：US5843228A
公开(公告)日：1998-12-01
申请号：US825637
申请日：1997-04-01
申请人： Masao Saitoh , Daisuke Wakabayashi , Takashi Atami , Hisashi Furuya
发明人： Masao Saitoh , Daisuke Wakabayashi , Takashi Atami , Hisashi Furuya
IPC分类号： H05B3/00 , C30B15/14 , C30B15/18 , C30B15/20 , H01L21/208 , C30B35/00
CPC分类号： C30B15/18 , Y10T117/1004 , Y10T117/1008 , Y10T117/1088
摘要： The invention is directed to preventing meltdown of conductive metal electrodes 5, 5 used to supply current to a heater 104 of a crucible 103. A single crystal pulling apparatus comprises: the heater 104 which encircles the crucible 103, and the pair of electrodes 5, 5, respectively threaded to a pair of graphite intermediate electrodes 6 of the heater 104, and a voltage source 9 for supplying power to the pair of electrodes 5, 5. A switch 11 switches the power on and off. A watthour meter 10a, continuously measures the current flowing through the heater 104. Investigation by the present inventors showed that in the case of a crack 8 in a lower portion of the intermediate electrode 6, minute fluctuations occurred in the measured value of the current, arising from an electric discharge phenomena in the crack 8 prior to meltdown of the electrodes 5, 5. Therefore, if fluctuations in the electric current measured by the wattmeter 10a are outside of a tolerance range, the controller 12 switches off the switch 11, thus interrupting power to the electrodes 5, 5, and preventing meltdown of the electrodes 5, 5.
摘要翻译：本发明旨在防止用于向坩埚103的加热器104提供电流的导电金属电极5,5的熔化。单晶拉制装置包括：围绕坩埚103的加热器104和一对电极5，分别连接到加热器104的一对石墨中间电极6和用于向一对电极5,5的供电的电压源9.开关11切断电源。电度表10a连续地测量流过加热器104的电流。本发明人的研究结果表明，在中间电极6的下部的裂纹8的情况下，电流的测量值发生微小的波动，由电极5,5的熔断之前的裂纹8中的放电现象引起。因此，如果由瓦特计10a测量的电流的波动超出公差范围，则控制器12将开关11断开中断对电极5,5的电力，并防止电极5,5的熔化。

9. 发明授权

US5873938A Single crystal pulling apparatus 失效
标题翻译：单晶拉丝机
公开(公告)号：US5873938A
公开(公告)日：1999-02-23
申请号：US774183
申请日：1996-12-26
申请人： Takashi Atami , Hisashi Furuya , Michio Kida
发明人： Takashi Atami , Hisashi Furuya , Michio Kida
IPC分类号： C30B15/12 , C30B35/00
CPC分类号： C30B15/12 , Y10S117/90 , Y10T117/1052 , Y10T117/1056
摘要： A single crystal pulling apparatus wherein a semiconductor melt is stored in an outer crucible, and a cylindrical inner crucible which acts as a partition body, is mounted inside the outer crucible to thus form a double crucible, and a single crystal of semiconductor is pulled from the semiconductor melt inside the inner crucible. The inner crucible contains a communicating portion, which is formed when the double crucible is formed, for allowing flow of the semiconductor melt into the inner crucible, and the communicating portion incorporates an arrangement for removal of gas bubbles which have adhered to the communicating portion.
摘要翻译：其中将半导体熔体储存在外坩埚中的单晶拉制装置和用作分隔体的圆柱形内坩埚安装在外坩埚内部，从而形成双坩埚，并将半导体单晶从半导体在内坩埚内熔化。内坩埚包含形成于双坩埚形成时的连通部，用于使半导体熔体流入内坩埚，并且连通部包括用于去除粘附到连通部的气泡的布置。

10. 发明授权

US5779792A Single crystal pulling apparatus 失效
标题翻译：单晶拉丝机
公开(公告)号：US5779792A
公开(公告)日：1998-07-14
申请号：US781843
申请日：1997-01-10
申请人： Takashi Atami , Hisashi Furuya , Michio Kida
发明人： Takashi Atami , Hisashi Furuya , Michio Kida
IPC分类号： C30B15/12 , C30B15/02 , C30B15/30 , C30B29/06 , H01L21/208 , C30B35/00
CPC分类号： C30B15/02 , C30B15/305 , Y10T117/1056
摘要： The present invention provides an improved single crystal pulling apparatus for pulling a single crystal semiconductor such as silicon or gallium arsenide. The apparatus of the present invention comprises a gas tight container, a crucible which is disposed inside the container, a heater, and a pair of coils to apply a cusp magnetic field in the semiconductor melt. The crucible is separated into two regions by a cylindrical partition body, and an outside region is used to supply source material and to melt the source material and an inside region is used for pulling up the single crystal. The inside and outside regions are communicated with the communication passage provided at the bottom of the partition body. Electrical currents in opposing directions are applied to a pair of coils for generating in the melt a cusp magnetic field which includes a vertical portion and a horizontal portion relative to the crucible. By positioning the vertical portion of the cusp magnetic field at the position of the communication passage and the horizontal portion below the semiconductor melt, the flow rate of the melt passing through the communication passage is reduced and the convection within the melt is suppressed. Consequently, high quality semiconductor single crystals can be obtained.
摘要翻译：本发明提供一种用于拉取诸如硅或砷化镓的单晶半导体的改进的单晶拉制装置。本发明的装置包括气密容器，设置在容器内的坩埚，加热器和一对在半导体熔体中施加尖点磁场的线圈。坩埚通过圆柱形分隔体分成两个区域，并且使用外部区域来供应源材料并熔化源材料，并且使用内部区域来拉出单晶。内部和外部区域与设置在分隔体底部的连通通道连通。相反方向的电流被施加到一对线圈，用于在熔体中产生包括相对于坩埚的垂直部分和水平部分的尖点磁场。通过将尖点磁场的垂直部分定位在连通通道的位置和半导体熔体下方的水平部分，通过连通通道的熔体的流速减小，并且熔体内的对流被抑制。因此，可以获得高质量的半导体单晶。

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