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1. 发明授权

US5874365A Semiconductor wafer etching method 失效
标题翻译：半导体晶片蚀刻方法
公开(公告)号：US5874365A
公开(公告)日：1999-02-23
申请号：US328528
申请日：1994-10-25
申请人： Masahiro Tomita , Yasuo Souki , Motoki Ito , Kazuo Tanaka , Hiroshi Tanaka
发明人： Masahiro Tomita , Yasuo Souki , Motoki Ito , Kazuo Tanaka , Hiroshi Tanaka
IPC分类号： H01L21/304 , H01L21/306 , H01L21/308 , H01L21/311 , H01L21/312 , H01L21/302
CPC分类号： H01L21/02019 , H01L21/30608 , H01L21/31127 , H01L21/3121 , Y10S438/928
摘要： A semiconductor wafer etching method is disclosed that allows etching without use of restricted ozone-destroying solvents such as trichloroethane or fluorocarbons. This method involves forming a protective film of silicon resin or alkali resistant resin on a semiconductor wafer. Then, a surface region of the wafer not covered by the protective film is etched. Finally, the protective film is peeled from the semiconductor wafer without damaging the wafer or employing solvents harmful to the environment.
摘要翻译：公开了半导体晶片蚀刻方法，其允许在不使用限制性的臭氧破坏溶剂如三氯乙烷或碳氟化合物的情况下进行蚀刻。该方法包括在半导体晶片上形成硅树脂或耐碱树脂的保护膜。然后，蚀刻未被保护膜覆盖的晶片的表面区域。最后，保护膜从半导体晶片剥离而不会损坏晶片或者使用对环境有害的溶剂。

2. 发明授权

US06251542B1 Semiconductor wafer etching method 失效
标题翻译：半导体晶片蚀刻方法
公开(公告)号：US06251542B1
公开(公告)日：2001-06-26
申请号：US09188565
申请日：1998-11-10
申请人： Masahiro Tomita , Yasuo Souki , Motoki Ito , Kazuo Tanaka , Hiroshi Tanaka
发明人： Masahiro Tomita , Yasuo Souki , Motoki Ito , Kazuo Tanaka , Hiroshi Tanaka
IPC分类号： H01L21302
CPC分类号： H01L21/30608 , H01L21/02019 , H01L21/31127 , H01L21/3121 , Y10S438/928
摘要： A semiconductor wafer etching method is disclosed that allows etching without use of restricted ozone-destroying solvents such as trichloroethane or fluorocarbons. This method involves forming a protective film of silicon resin or alkali resistant resin on a semiconductor wafer. Then, a surface region of the wafer not covered by the protective film is etched. Finally, the protective film is peeled from the semiconductor wafer without damaging the wafer or employing solvents harmful to the environment.
摘要翻译：公开了半导体晶片蚀刻方法，其允许在不使用限制性的臭氧破坏溶剂如三氯乙烷或碳氟化合物的情况下进行蚀刻。该方法包括在半导体晶片上形成硅树脂或耐碱树脂的保护膜。然后，蚀刻未被保护膜覆盖的晶片的表面区域。最后，保护膜从半导体晶片剥离而不会损坏晶片或者使用对环境有害的溶剂。

3. 发明授权

US5972236A Etchant, etching method using the same, and related etching apparatus 失效
标题翻译：蚀刻剂，使用其的蚀刻方法以及相关的蚀刻装置
公开(公告)号：US5972236A
公开(公告)日：1999-10-26
申请号：US907907
申请日：1997-08-11
申请人： Hiroshi Tanaka , Yoshitsugu Abe , Motoki Ito , Kazuyuki Inoue , Satoru Kosaka
发明人： Hiroshi Tanaka , Yoshitsugu Abe , Motoki Ito , Kazuyuki Inoue , Satoru Kosaka
IPC分类号： H01L21/306 , B44C1/22
CPC分类号： H01L21/30617
摘要： A silicon substance is etched by using alkaline etchant containing additive (Cu, Pb, Mg). The content of the additive is controlled intentionally to provide desired etching quality during an etching operation.
摘要翻译：通过使用含碱性蚀刻剂的添加剂（Cu，Pb，Mg）蚀刻硅物质。有意地控制添加剂的含量以在蚀刻操作期间提供期望的蚀刻质量。

4. 发明授权

US5949118A Etching method for silicon substrates and semiconductor sensor 失效
标题翻译：硅衬底和半导体传感器的蚀刻方法
公开(公告)号：US5949118A
公开(公告)日：1999-09-07
申请号：US637128
申请日：1996-04-24
申请人： Minekazu Sakai , Tsuyoshi Fukada , Koki Mizuno , Yasutoshi Suzuki , Yoshitsugu Abe , Hiroshi Tanaka , Motoki Ito , Kazuhisa Ikeda , Hiroshi Okada
发明人： Minekazu Sakai , Tsuyoshi Fukada , Koki Mizuno , Yasutoshi Suzuki , Yoshitsugu Abe , Hiroshi Tanaka , Motoki Ito , Kazuhisa Ikeda , Hiroshi Okada
IPC分类号： G01L9/00 , H01L29/84 , H01L29/82
CPC分类号： G01L9/0042 , H01L29/84 , Y10S438/977
摘要： An etching method for a silicon substrate, which can easily smooth the etching surface of the (110)-oriented silicon, is disclosed. A container is filled with KOH solution. In the KOH solution is immersed a (110)-oriented silicon wafer having a PN junction and is also disposed a platinum electrode plate to face the silicon wafer. To between a platinum electrode of the silicon wafer and the platinum electrode plate are connected a constant voltage power source, an ammeter and a contact in series. A controller starts etching from one surface on which the PN junction is formed, and terminates voltage application when the specified time lapses after the formation of an anodic oxide film is equilibrated with the etching of the anodic oxide film on the etching surface on the PN junction part. In this case, the controller detects flowing current through the ammeter, and the point of time when the equilibrium state is obtained is the point of inflection of the detected current to the constant current after the peak thereof.
摘要翻译：公开了一种可以容易地平滑（110）取向的硅的蚀刻表面的硅衬底的蚀刻方法。容器中充满KOH溶液。在KOH溶液中浸渍具有PN结的（110）取向的硅晶片，并且还设置有与铂晶片相对的铂电极板。在硅晶片的铂电极和铂电极板之间连接恒压电源，电流表和触点串联。控制器从其上形成PN结的一个表面开始蚀刻，并且在阳极氧化膜形成之后指定的时间经过平衡后，在PN结的蚀刻表面上蚀刻阳极氧化膜来终止电压施加部分。在这种情况下，控制器检测通过电流表的流动电流，并且获得平衡状态的时间点是检测电流在其峰值之后的恒定电流的拐点。

5. 发明授权

US06194236B1 Electrochemical etching method for silicon substrate having PN junction 有权
标题翻译：具有PN结的硅衬底的电化学蚀刻方法
公开(公告)号：US06194236B1
公开(公告)日：2001-02-27
申请号：US09247908
申请日：1999-02-11
申请人： Minekazu Sakai , Tsuyoshi Fukada , Yukihiko Tanizawa , Koki Mizuno , Yasutoshi Suzuki , Yoshitsugu Abe , Hiroshi Tanaka , Motoki Ito , Kazuhisa Ikeda , Hiroshi Okada
发明人： Minekazu Sakai , Tsuyoshi Fukada , Yukihiko Tanizawa , Koki Mizuno , Yasutoshi Suzuki , Yoshitsugu Abe , Hiroshi Tanaka , Motoki Ito , Kazuhisa Ikeda , Hiroshi Okada
IPC分类号： H01L2166
CPC分类号： G01L9/0042 , H01L29/84 , Y10S438/977
摘要： An etching method for a silicon substrate, which can easily smooth the etching surface of the (110)-oriented silicon, is disclosed. A container is filled with KOH solution. In the KOH solution is immersed a (110)-oriented silicon wafer having a PN junction and is also disposed a platinum electrode plate to face the silicon wafer. To between a platinum electrode of the silicon wafer and the platinum electrode plate are connected a constant voltage power source, an ammeter and a contact in series. A controller starts etching from one surface on which the PN junction is formed, and terminates voltage application when the specified time lapses after the formation of an anodic oxide film is equilibrated with the etching of the anodic oxide film on the etching surface on the PN junction part. In this case, the controller detects flowing current through the ammeter, and the point of time when the equilibrium state is obtained is the point of inflection of the detected current to the constant current after the peak thereof.
摘要翻译：公开了一种可以容易地平滑（110）取向的硅的蚀刻表面的硅衬底的蚀刻方法。容器中充满KOH溶液。在KOH溶液中浸渍具有PN结的（110）取向的硅晶片，并且还设置有与铂晶片相对的铂电极板。在硅晶片的铂电极和铂电极板之间连接恒压电源，电流表和触点串联。控制器从其上形成PN结的一个表面开始蚀刻，并且在阳极氧化膜形成之后指定的时间经过平衡后，在PN结的蚀刻表面上蚀刻阳极氧化膜来终止电压施加部分。在这种情况下，控制器检测通过电流表的流动电流，并且获得平衡状态的时间点是检测电流在其峰值之后的恒定电流的拐点。

6. 发明授权

US07868715B2 Duplexer and communication apparatus using the same 有权
标题翻译：双工器和使用其的通信设备
公开(公告)号：US07868715B2
公开(公告)日：2011-01-11
申请号：US12091428
申请日：2006-10-26
申请人： Motoki Ito
发明人： Motoki Ito
IPC分类号： H03H9/72 , H03H9/64
CPC分类号： H03H9/0576 , H03H9/725
摘要： The present invention provides a duplexer using a ladder-type filter, which has a small size and is superior in isolation characteristic, and a communication apparatus using such a duplexer. A series resonator (R1) contained in a first filter element (F1) and a parallel resonator (R4) contained in a second filter element (F2) are disposed so as not to allow the elastic wave propagating paths to be overlapped with each other. By disposing them in this manner, it is possible to prevent an elastic wave, leaked from the series resonator (R1) and most influential to the isolation characteristic, from being received by the parallel resonator (R4). Consequently, it is possible to achieve a small-size duplexer that is superior in isolation characteristic.
摘要翻译：本发明提供一种使用具有小尺寸并且隔离特性优异的梯形滤波器的双工器，以及使用这种双工器的通信装置。包含在包含在第二滤波器元件（F2）中的第一滤波器元件（F1）和并联谐振器（R4）中的串联谐振器（R1）被布置成不允许弹性波传播路径彼此重叠。通过以这种方式设置它们，可以防止从串联谐振器（R1）泄漏并且最有影响隔离特性的弹性波被并联谐振器（R4）接收。因此，可以实现隔离特性优异的小型双工器。

7. 发明授权

US07307369B2 Surface acoustic wave device, surface acoustic wave apparatus, and communications equipment 失效
标题翻译：表面声波装置，表面声波装置和通信设备
公开(公告)号：US07307369B2
公开(公告)日：2007-12-11
申请号：US11212504
申请日：2005-08-26
申请人： Yuuko Yokota , Motoki Ito , Shigehiko Nagamine , Masayuki Funami , Kiyohiro Iioka
发明人： Yuuko Yokota , Motoki Ito , Shigehiko Nagamine , Masayuki Funami , Kiyohiro Iioka
IPC分类号： H01L41/04
CPC分类号： H03H9/1085 , H01L2224/16225 , H01L2924/16195 , H03H3/08 , H03H9/02622 , H03H9/02874 , H03H9/059 , H03H9/1092 , H03H9/6483 , H03H9/725
摘要： An IDT electrode 3, and an input electrode section 5 and an output electrode section 6 each connecting with the IDT electrode 3 are formed in a filter region on one main surface of a piezoelectric substrate 2, and a semiconductor layer 22 is formed on the other main surface opposite to the one main surface of the piezoelectric substrate 2. The semiconductor layer 22 makes it possible to prevent pyroelectric destruction in the device manufacturing process as well as to prevent out-of-band attenuation characteristics from being degraded.
摘要翻译：在压电基板2的一个主表面上的过滤器区域中形成有与IDT电极3连接的IDT电极3，输入电极部5和输出电极部6，并且在另一个主表面上形成半导体层22 主表面与压电基片2的一个主表面相对。半导体层22使得可以防止器件制造工艺中的热释电破坏以及防止带外衰减特性的劣化。

8. 发明申请

US20060117832A1 Gas analyzer apparatus 有权
标题翻译：气体分析仪
公开(公告)号：US20060117832A1
公开(公告)日：2006-06-08
申请号：US11286584
申请日：2005-11-23
申请人： Tomohisa Nakashima , Naoki Tsukamoto , Motoki Ito , Yukichika Ito
发明人： Tomohisa Nakashima , Naoki Tsukamoto , Motoki Ito , Yukichika Ito
IPC分类号： G01N7/00
CPC分类号： G01N33/0009 , G01N1/2258 , G01N2001/2282
摘要： A gas analyzer apparatus including a support tube having a distal portion arranged in a flue and a gas sensor supported on the support tube. An air supply tube supplies cooling air into the support tube. A basal portion of the gas sensor is cooled by the cooling air.
摘要翻译：一种气体分析装置，包括：支撑管，其具有布置在烟道中的远端部分和支撑在所述支撑管上的气体传感器。供气管将冷却空气提供到支撑管中。气体传感器的基础部分被冷却空气冷却。

9. 发明申请

US20050001696A1 Surface acoustic wave device and communication apparatus using the same 有权
标题翻译：声表面波装置及使用其的通信装置
公开(公告)号：US20050001696A1
公开(公告)日：2005-01-06
申请号：US10884827
申请日：2004-07-02
申请人： Kazuhiro Otsuka , Motoki Ito , Kiyohiro Iioka , Tsuyoshi Nakai
发明人： Kazuhiro Otsuka , Motoki Ito , Kiyohiro Iioka , Tsuyoshi Nakai
IPC分类号： H03H9/00 , H03H9/02 , H03H9/25 , H03H9/64 , H03H9/72
CPC分类号： H03H9/6469 , H03H9/0038 , H03H9/0042 , H03H9/0057 , H03H9/0061 , H03H9/02763 , H03H9/14582 , H03H9/14588 , H03H9/25 , H03H9/6436
摘要： IDT electrodes are arranged on a piezoelectric substrate along a propagation direction of a surface acoustic wave whereas reflectors are each interposed between a respective pair of IDT electrodes, the reflectors each including four or more electrode fingers extended perpendicularly to the propagation direction. An electrode-finger pitch ‘a’ of the reflector is progressively decreased from the opposite ends of the reflector toward the center thereof. Frequencies allowed to pass through a pass band may be controlled by varying the electrode-finger pitch. Thus is provided a surface acoustic wave device featuring a wide-band transmission performance.
摘要翻译： IDT电极沿着声表面波的传播方向布置在压电基板上，而反射器分别插在相应的一对IDT电极之间，每个反射器包括垂直于传播方向延伸的四个或更多个电极指。反射器的电极指间距“a”从反射器的相对端逐渐减小到其中心。允许通过通带的频率可以通过改变电极指间距来控制。因此，提供了具有宽带传输性能的表面声波装置。

10. 发明授权

US09737850B2 Exhaust gas purification palladium monolayer catalyst for saddle-riding-type vehicle 有权
公开(公告)号：US09737850B2
公开(公告)日：2017-08-22
申请号：US14389129
申请日：2012-09-12
申请人： Toshiaki Kimura , Hiroyuki Horimura , Akiko Koga , Motoki Ito , Masateru Tsuji , Takashi Wakabayashi , Yosuke Shibata , Yunosuke Nakahara , Kiyotaka Yasuda
发明人： Toshiaki Kimura , Hiroyuki Horimura , Akiko Koga , Motoki Ito , Masateru Tsuji , Takashi Wakabayashi , Yosuke Shibata , Yunosuke Nakahara , Kiyotaka Yasuda
IPC分类号： B01D53/86 , B01D53/94 , F01N3/10 , B01J23/63
CPC分类号： B01D53/865 , B01D53/944 , B01D2255/1023 , B01D2255/2042 , B01D2255/2065 , B01D2258/01 , B01J23/63 , F01N3/101 , F01N2590/04 , Y02A50/2324 , Y02A50/2341 , Y02T10/22
摘要： Provided is a novel palladium catalyst capable of efficiently purifying carbon monoxide (CO) and total hydrocarbons (THC) under a fuel-rich atmosphere even when palladium (Pd) is used as a catalyst active component. Proposed is a palladium monolayer catalyst for an exhaust gas from a saddle-riding-type vehicle, which is an exhaust gas purification catalyst for a saddle-riding-type vehicle to be installed in an exhaust gas passage in an internal combustion engine. The palladium monolayer catalyst includes a substrate, and a catalyst layer that has the form of a monolayer and contains palladium acting as a catalyst active component, an inorganic porous body acting as a catalyst carrier, ceria (CeO2) particles acting as a promoter component, and barium.

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