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    • 1. 发明申请
    • SURFACE ACOUSTIC WAVE FILTER DEVICE AND DUPLEXER
    • 表面声波滤波器和双工器
    • US20160094201A1
    • 2016-03-31
    • US14959135
    • 2015-12-04
    • Murata Manufacturing Co., Ltd.
    • Yuichi TAKAMINE
    • H03H9/72H03H9/54
    • H03H9/725H03H9/0038H03H9/008H03H9/14588H03H9/54H03H9/6433H03H9/6469H03H9/6496
    • A surface acoustic wave filter device includes surface acoustic wave filters, one of which includes a longitudinally coupled resonator-type first filter section and a longitudinally coupled resonator-type second filter section. The second filter section is electrically connected in parallel or series with the first filter section on at least one of an input signal side and an output signal side. The first filter section includes a first IDT group including three IDTs. The second filter section includes a second IDT group including three IDTs. Another surface acoustic wave filter includes a third IDT group that is cascade connected to the first filter section and the second filter section and includes IDTs arranged in order in a line in a surface acoustic wave propagation direction.
    • 表面声波滤波器装置包括表面声波滤波器,其中之一包括纵向耦合的谐振器型第一滤波器部分和纵向耦合的谐振器型第二滤波器部分。 第二滤波器部分在输入信号侧和输出信号侧中的至少一个上与第一滤波器部分并联或串联电连接。 第一滤波器部分包括包括三个IDT的第一IDT组。 第二滤波器部分包括包括三个IDT的第二IDT组。 另一个表面声波滤波器包括级联连接到第一滤波器部分和第二滤波器部分的第三IDT组,并且包括按表面声波传播方向的一行排列的IDT。
    • 3. 发明授权
    • Elastic wave filter and communication device equipped with the elastic wave filter
    • 弹性波滤波器和通讯装置配有弹性波滤波器
    • US07760048B2
    • 2010-07-20
    • US10561341
    • 2005-04-04
    • Teruhisa ShibaharaMasakazu TaniYasuaki Shin
    • Teruhisa ShibaharaMasakazu TaniYasuaki Shin
    • H03H9/64H03H9/72
    • H03H9/0222H03H9/0061H03H9/02952H03H9/14588H03H9/6469
    • An elastic wave filter includes two longitudinally coupled resonator type elastic wave filter elements that are cascade connected with each other, each longitudinally coupled resonator type elastic wave filter element including three IDTs (interdigital transducers) arranged on a piezoelectric substrate in a transmitting direction of an elastic wave. In at least one of the longitudinally coupled resonator type elastic wave filter elements, electrode fingers of the IDTs that are cascade connected are arranged at a pitch that is smaller than a pitch of electrode fingers of the remaining IDT. The adverse effect of a parasitic capacitance in cascade connected wires disposed between the longitudinally coupled resonator type elastic wave filter elements is reduced so as to improve impedance matching of a cascade connected portion and to improve the VSWR characteristics of input-output terminals of the elastic wave filter.
    • 弹性波滤波器包括彼此串联连接的两个纵向耦合的谐振器型弹性波滤波器元件,每个纵向耦合的谐振器型弹性波滤波器元件包括布置在压电基片上的三个IDT(叉指换能器) 波。 在纵向耦合的谐振器型弹性波滤波器元件中的至少一个中,串联连接的IDT的电极指以小于剩余IDT的电极指的间距的间距排列。 布置在纵向耦合的谐振器型弹性波滤波器元件之间的级联连接线中的寄生电容的不利影响减小,从而改善级联连接部分的阻抗匹配并改善弹性波的输入 - 输出端子的VSWR特性 过滤。
    • 4. 发明申请
    • ACOUSTIC WAVE DEVICE
    • 声波设备
    • US20090201105A1
    • 2009-08-13
    • US12428715
    • 2009-04-23
    • Minefumi Ouchi
    • Minefumi Ouchi
    • H03H9/46
    • H03H9/6469H03H9/0057H03H9/0061H03H9/0085H03H9/0222H03H9/14588H03H9/6433
    • An acoustic wave device includes first and second 3-IDT acoustic wave filters provided on a piezoelectric substrate. A second IDT in the first acoustic wave filter is electrically connected to a second IDT in the second acoustic wave filter and a third IDT in the first acoustic wave filter is electrically connected to a third IDT in the second acoustic wave filter to cascade the first acoustic wave filter with the second acoustic wave filter. An acoustic wave resonator is connected to a first IDT in the first acoustic wave filter. In the acoustic wave device, NA/NB is in a range from about 2.6 to about 3.5 and fB/fa is in a range from about 0.995 to about 1.010, where NA denotes the number of electrode fingers of the first IDT in the first acoustic wave filter, NB denotes the number of electrode fingers of each of the second and third IDTs in the first acoustic wave filter, fB denotes the end frequency of a stop band of each of reflectors in the first and second acoustic wave filters, and fa denotes an anti-resonant frequency of the acoustic wave resonator.
    • 声波装置包括设置在压电基板上的第一和第二3-IDT声波滤波器。 第一声​​波滤波器中的第二IDT电连接到第二声波滤波器中的第二IDT,并且第一声波滤波器中的第三IDT与第二声波滤波器中的第三IDT电连接以级联第一声学 滤波器与第二声波滤波器。 声波谐振器连接到第一声波滤波器中的第一IDT。 在声波装置中,NA / NB在约2.6至约3.5的范围内,并且fB / fa在约0.995至约1.010的范围内,其中NA表示第一声学中第一IDT的电极指的数量 波形滤波器,NB表示第一声波滤波器中的第二和第三IDT中的每一个的电极指的数量,fB表示第一和第二声波滤波器中每个反射器的阻带的结束频率,fa表示 声波谐振器的反谐振频率。
    • 5. 发明申请
    • SURFACE ACOUSTIC WAVE FILTER DEVICE AND DUPLEXER
    • 表面声波滤波器和双工器
    • US20090179715A1
    • 2009-07-16
    • US12414696
    • 2009-03-31
    • Yuichi TAKAMINE
    • Yuichi TAKAMINE
    • H03H9/00
    • H03H9/0061H03H9/0085H03H9/14588H03H9/6469H03H9/725
    • A surface acoustic wave filter device includes first and second longitudinally coupled resonator type surface acoustic wave filter units. The first and second filter units are cascade-connected to each other. A phase of a signal flowing through a first signal line electrically connecting second IDTs of the first and second surface acoustic wave filter units is different by about 180° from a phase of a signal flowing through a signal line electrically connecting third IDTs of the first and second surface acoustic wave filter units. A surface acoustic wave resonator is connected between the first and second signal lines. A resonance point of the surface acoustic wave resonator is set in an attenuation region in the vicinity of the edge of a low frequency side of a filter passband or an anti-resonance point of the surface acoustic wave resonator is set in an attenuation region in the vicinity of the edge of a high frequency side of the filter passband
    • 表面声波滤波器装置包括第一和第二纵向耦合的谐振器型表面声波滤波器单元。 第一和第二过滤器单元彼此级联连接。 流过电连接第一和第二声表面波滤波器单元的第二IDT的第一信号线的信号的相位与流过电连接第一和第二表面声波滤波器单元的第三IDT的信号线的信号的相位相差约180° 第二声表面波滤波器单元。 表面声波谐振器连接在第一和第二信号线之间。 表面声波谐振器的共振点设置在滤波器通带的低频侧边缘附近的衰减区域中,或者声表面波谐振器的反共振点被设定在衰减区域中 滤波器通带的高频侧的边缘附近
    • 7. 发明授权
    • Surface acoustic wave apparatus and communications equipment
    • 表面声波装置和通信设备
    • US07453333B2
    • 2008-11-18
    • US11210157
    • 2005-08-23
    • Hiroyuki TanakaKiyohiro Iioka
    • Hiroyuki TanakaKiyohiro Iioka
    • H03H9/64
    • H03H9/6469H03H9/1085
    • A surface acoustic wave apparatus comprises a piezoelectric substrate 17 on the bottom face of which IDT electrodes 3 and 4 and an annular ground electrode 6 which encloses the IDT electrodes 3 and 4 and is connected to the IDT electrode 3, and a base substrate on the top face of which an annular ground conductor 7 is formed and which has an internal ground conductor layer 10a and a bottom face ground conductor layer 11a connected to the annular ground conductor 7 and an internal ground conductor layer 10b and a bottom face ground conductor layer 11b connected to the IDT electrode 4. A first ground conductor composed of the internal ground conductor layer 10a and the bottom face ground conductor layer 11a is electrically separated from a second ground conductor composed of the internal ground conductor layer 10b and the bottom face ground conductor layer 11b. The apparatus has an excellent out-of-band attenuation characteristic.
    • 表面声波装置包括位于其底面上的IDT电极3和4的压电基片17和围绕IDT电极3和4并与IDT电极3连接的环形接地电极6, 其顶面形成有环形接地导体7,并且具有连接到环形接地导体7的内部接地导体层10a和底面接地导体层11a,以及内部接地导体层10b和底面接地 连接到IDT电极4的导体层11b。 由内部接地导体层10a和底面接地导体层11a组成的第一接地导体与由内部接地导体层10b和底面接地导体层11b组成的第二接地导体电分离。 该装置具有优异的带外衰减特性。