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1. 发明申请

US20050203250A1 Pressure-sensitive adhesive film for the suface protection of semiconductor wafers and method for protection of semiconductor wafers with the film 有权
标题翻译：用于半导体晶片的表面保护的压敏粘合剂膜以及用该膜保护半导体晶片的方法
公开(公告)号：US20050203250A1
公开(公告)日：2005-09-15
申请号：US10507245
申请日：2003-03-26
申请人： Masafumi Miyakawa , Makoto Kataoka , Jun Nakashima , Yoshihisa Fujii , Shinichi Hayakawa , Yasuhisa Fujii
发明人： Masafumi Miyakawa , Makoto Kataoka , Jun Nakashima , Yoshihisa Fujii , Shinichi Hayakawa , Yasuhisa Fujii
IPC分类号： C09J7/02 , H01L21/68 , C08F8/00
CPC分类号： H01L21/6836 , C09J7/22 , C09J7/38 , C09J2203/326 , H01L2221/68327 , Y10T428/31935
摘要： A surface protecting adhesive film for a semiconductor wafer in which an adhesive layer is formed on one surface of a base film, wherein the adhesive layer comprises 100 weight parts of a polymer (A) having a functional group capable of reacting with a cross-linking agent and a temperature in a range of from −50° C. to 5° C. at which tan δ of a dynamic viscoelasticity is maximized, from 10 weight parts to 100 weight parts of a polymer (B) having a functional group capable of reacting with a cross-linking agent and a temperature in a range of from more than 5° C. to 50° C. at which tan δ of a dynamic viscoelasticity is maximized, and from 0.1 weight part to 10 weight parts of a cross-linking agent (C) having more than 2 cross-linking reactive functional groups in a molecule based on 100 weight parts of total amount of the polymers (A) and (B), and the surface protecting adhesive film for a semiconductor wafer which the thickness of the adhesive layer is from 5 μm to 50 μm has an excellent adhesion, prevention of breakage and contamination resistance.
摘要翻译：一种用于半导体晶片的表面保护粘合剂膜，其中在基膜的一个表面上形成粘合剂层，其中粘合剂层包含100重量份具有能够与交联反应的官能团的聚合物（A）并且在-50℃至5℃的范围内的温度，其中动态粘弹性的tanδ最大化，10重量份至100重量份具有能够具有以下官能团的官能团的聚合物（B）与交联剂反应，并且在大于5℃至50℃的范围内的温度，动态粘弹性的tanδ最大化，0.1重量份至10重量份的交联剂，基于100重量份聚合物（A）和（B）的总量，在分子中具有多于2个交联反应性官能团的交联剂（C）和半导体晶片的表面保护粘合剂膜，其厚度的粘合剂层为5〜50μm 具有优异的附着力，防止破损和抗污染。

2. 发明授权

US07603297B2 Inventory management method, system and program 失效
标题翻译：库存管理方法，系统和程序
公开(公告)号：US07603297B2
公开(公告)日：2009-10-13
申请号：US10529490
申请日：2003-10-07
申请人： Tomoyuki Yoshida , Yoshihisa Fujii , Genichiro Iguchi
发明人： Tomoyuki Yoshida , Yoshihisa Fujii , Genichiro Iguchi
IPC分类号： G06Q1/14 , G06Q10/00 , G06F19/00
CPC分类号： G06Q10/087 , G06Q20/203
摘要： An inventory management method or system for controlling amounts of stocks is provided. The method comprises the steps of: storing delivery times and quantities of order lots accepted and restock lead times predetermined every item in a storage; selecting at least one order lot accepted, having a delivery time within a period from “b” days before to “a” days after a basic time, from said order lots accepted, to set a threshold value x+yσ1 (where y≧0) based upon both an average x and a standard deviation σ1 of quantities of said selected order lot accepted; classifying at least one order lot accepted having a quantity α of the selected order lot accepted as a normal accepted order lot, wherein the α is less than or equal to said threshold value and classifying at least one order lot accepted having a quantity α of the selected order lot accepted as a special accepted order lot, wherein the α is greater than said threshold value; and calculating a basic stock using a predetermined formula from said classified normal order lot accepted.
摘要翻译：提供了一种用于控制库存量的库存管理方法或系统。该方法包括以下步骤：将所接收的订单批量的交货时间和数量保存在存储器中预定的每个物品; 选择至少一个接受的订单，在基本时间之后的“b”天之前到“a”天的时间内从所接收的订单批次中选择交货时间，以设置阈值x + ysigma1（其中y> = 0）基于接受的所选择的订单批次的平均x和标准差σigma2; 将接受的所选择的订单批次的数量α的至少一个订单批次分类为正常接受的订单批次，其中所述α小于或等于所述阈值，并且对接受的至少一个订单批次进行分类，所述订单批次的数量为所选订单批次被接受为特殊接受的订单批次，其中所述α大于所述阈值; 以及使用来自所接受的所述分类正常订单批次的预定公式计算基本库存。

3. 发明申请

US20060085291A1 Inventory management method, inventory management system, and inventory management program 失效
标题翻译：库存管理方法，库存管理系统和库存管理程序
公开(公告)号：US20060085291A1
公开(公告)日：2006-04-20
申请号：US10529490
申请日：2003-10-07
申请人： Tomoyuki Yoshida , Yoshihisa Fujii , Genichiro Iguchi
发明人： Tomoyuki Yoshida , Yoshihisa Fujii , Genichiro Iguchi
IPC分类号： G06E1/00
CPC分类号： G06Q10/087 , G06Q20/203
摘要： An inventory management method or system for controlling amounts of stocks is provided. The method comprises the steps of: storing delivery times and quantities of order lots accepted and restock lead times predetermined every item in a storage; selecting at least one order lot accepted, having a delivery time within a period from “b” days before to “a” days after a basic time, from said order lots accepted, to set a threshold value x+yσ1 (where y≧0) based upon both an average x and a standard deviation σ1 of quantities of said selected order lot accepted; classifying at least one order lot accepted having a quantity α of the selected order lot accepted as a normal accepted order lot, wherein the α is less than or equal to said threshold value and classifying at least one order lot accepted having a quantity α of the selected order lot accepted as a special accepted order lot, wherein the α is greater than said threshold value; and calculating a basic stock using a predetermined formula from said classified normal order lot accepted.
摘要翻译：提供了一种用于控制库存量的库存管理方法或系统。该方法包括以下步骤：将所接收的订单批量的交货时间和数量保存在存储器中预定的每个物品; 选择至少一个接受的订单，在基本时间之后的“b”天之前到“一个”天的期间内，从所接收的订单批次到达设置阈值x + ysigma < / SUB>（其中y> = 0）基于接受的所选择的订单批次的平均值x和标准偏差σσ1 < 将接受的所选择的订单批次的数量α的至少一个订单批次分类为正常接受的订单批次，其中所述α小于或等于所述阈值，并且对接受的至少一个订单批次进行分类，所述订单批次的数量为所选订单批次被接受为特殊接受的订单批次，其中所述α大于所述阈值; 以及使用来自所接受的所述分类正常订单批次的预定公式计算基本库存。

4. 发明授权

US06618415B1 Semiconductor laser device and fabricating method thereof 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US06618415B1
公开(公告)日：2003-09-09
申请号：US09651106
申请日：2000-08-30
申请人： Yoshinori Ohitsu , Keisuke Miyazaki , Yoshihisa Fujii
发明人： Yoshinori Ohitsu , Keisuke Miyazaki , Yoshihisa Fujii
IPC分类号： H01S500
CPC分类号： H01S5/16 , H01S5/2222 , H01S5/2231
摘要： Provided is a semiconductor laser device in which at least an n-type first cladding layer, an active layer and a p-type second cladding layer are formed on or above an n-type semiconductor substrate. An n-type current block layer having a stripe-shaped groove-like removed portion is formed on the second cladding layer and at least a p-type third cladding layer is formed on the current block layer including the stripe-shaped removed portion. The second cladding layer has a p-type C impurity concentration of 3×1017 cm−3 to 2×1018 cm−3.
摘要翻译：提供一种半导体激光器件，其中在n型半导体衬底上或其上形成至少n型第一覆盖层，有源层和p型第二覆盖层。在第二包层上形成具有条形槽状去除部分的n型电流阻挡层，并且在包括条形去除部分的当前阻挡层上至少形成p型第三包覆层。第二包层的p型C杂质浓度为3×10 17 cm -3〜2×10 18 cm -3。

5. 发明授权

US5170231A Silicon carbide field-effect transistor with improved breakdown voltage and low leakage current 失效
标题翻译：具有改善的击穿电压和低漏电流的碳化硅场效应晶体管
公开(公告)号：US5170231A
公开(公告)日：1992-12-08
申请号：US705630
申请日：1991-05-24
申请人： Yoshihisa Fujii , Akira Suzuki , Katsuki Furukawa
发明人： Yoshihisa Fujii , Akira Suzuki , Katsuki Furukawa
IPC分类号： H01L21/04 , H01L29/12 , H01L29/24 , H01L29/78
CPC分类号： H01L29/1608 , H01L29/66068 , H01L29/7802 , H01L29/7839
摘要： A silicon carbide field-effect transistor is provided which includes a semiconductor substrate, a channel formation layer of silicon carbide formed above the substrate, source and drain regions provided in contact with the channel formation layer, a gate insulator disposed between the source and drain regions, and a gate electrode formed on the gate insulator, wherein a first contact between the channel formation layer and the drain region exhibits different electric characteristics from those of a second contact between the channel formation layer and the source region. Also provided is a method for producing such a silicon carbide field-effect transistor.
摘要翻译：提供一种碳化硅场效应晶体管，其包括半导体衬底，形成在衬底上方的碳化硅的沟道形成层，与沟道形成层接触设置的源极和漏极区，设置在源极和漏极区之间的栅极绝缘体以及形成在栅极绝缘体上的栅电极，其中沟道形成层和漏极区之间的第一接触表现出与沟道形成层和源极区之间的第二接触的电特性不同的电特性。还提供了制造这种碳化硅场效应晶体管的方法。

6. 发明授权

US5030580A Method for producing a silicon carbide semiconductor device 失效
标题翻译：碳化硅半导体器件的制造方法
公开(公告)号：US5030580A
公开(公告)日：1991-07-09
申请号：US574487
申请日：1990-08-23
申请人： Katsuki Furukawa , Akira Suzuki , Yoshihisa Fujii
发明人： Katsuki Furukawa , Akira Suzuki , Yoshihisa Fujii
IPC分类号： H01L21/265 , H01L21/04
CPC分类号： H01L21/046 , Y10S438/931
摘要： A method for producing a silicon carbide semiconductor device having at least one of the p-type conductive layer and the n-type conductive layer is disclosed which includes the steps of: forming a silicon carbide single-crystal layer on a semiconductor substrate or semiconductor bulk single crystal; and implanting the III group of V group element ions in combination with fluorine ions in the silicon carbide single-crystal layer to form a p-type or n-type conductive layer, respectively.
摘要翻译：公开了一种制造具有p型导电层和n型导电层中的至少一种的碳化硅半导体器件的方法，其包括以下步骤：在半导体衬底或半导体体上形成碳化硅单晶层单晶; 并且在碳化硅单晶层中将III族V族元素离子与氟离子组合，分别形成p型或n型导电层。

7. 发明授权

US06357224B1 Engine exhaust gas purifying apparatus 失效
标题翻译：发动机废气净化装置
公开(公告)号：US06357224B1
公开(公告)日：2002-03-19
申请号：US09592677
申请日：2000-06-12
申请人： Shigeru Kawamoto , Yutaka Takaku , Toshio Ishii , Yoshihisa Fujii , Shinji Nakagawa , Minoru Oosuga
发明人： Shigeru Kawamoto , Yutaka Takaku , Toshio Ishii , Yoshihisa Fujii , Shinji Nakagawa , Minoru Oosuga
IPC分类号： F01N300
CPC分类号： F01N3/0842 , F01N11/007 , F01N2550/03 , F02B23/101 , F02B2075/125 , F02D41/0275 , F02D41/1441 , Y02T10/24 , Y02T10/47
摘要： The invention provides a method of controlling an air-fuel ratio and for diagnosing a deterioration of a catalyst having an NOx trapping agent in an internal combustion engine. An exhaust gas purifying apparatus having an NOx trapping agent arranged within an exhaust gas passage, an air-fuel ratio changing means temporarily changing the air-fuel ratio of the exhaust gas from the lean to the stoichiometric or rich air-fuel ratio at a predetermined cycle, a particular component detecting means detecting a particular component in the exhaust gas downstream the NOx trapping agent, a NOx discharge or reduction completion judging means, and NOx discharge or reduction completion time detecting means detecting a time required for purifying the NOx.
摘要翻译：本发明提供一种控制空燃比并且用于诊断在内燃机中具有NOx捕集剂的催化剂的劣化的方法。一种排气净化装置，其具有配置在排气通路内的NOx捕集剂，空燃比变更单元将预定的排气的空燃比暂时地从所述稀薄变化为理论空燃比，循环，检测NOx捕集剂下游的废气中的特定成分的特定成分检测装置，NOx排放或还原完成判定装置，以及NOx排放或还原完成时间检测装置，其检测净化NOx所需的时间。

8. 发明授权

US5387804A Light emitting diode 失效
标题翻译：发光二极管
公开(公告)号：US5387804A
公开(公告)日：1995-02-07
申请号：US944794
申请日：1992-09-14
申请人： Akira Suzuki , Katsuki Furukawa , Mitsuhiro Shigeta , Yoshihisa Fujii
发明人： Akira Suzuki , Katsuki Furukawa , Mitsuhiro Shigeta , Yoshihisa Fujii
IPC分类号： H01L29/78 , H01L33/00 , H01L33/20 , H01L33/32 , H01L33/34 , H01L29/161 , H01L29/20 , H01L29/22
CPC分类号： H01L33/32 , H01L33/0025 , H01L33/007 , H01L33/34
摘要： A light emitting diode is disclosed which comprises at least one heterojunction composed of silicon carbide (SIC) and semiconductor materials selected from the group consisting of gallium nitride (GAN), aluminum nitride (AlN), and aluminum gallium nitride (Ga.sub.x Al.sub.1-x N, 0
摘要翻译：公开了一种发光二极管，其包括由碳化硅（SIC）组成的至少一个异质结和从氮化镓（GAN），氮化铝（AlN）和氮化镓铝（GaxAl1-xN，O

9. 发明授权

US5216264A Silicon carbide MOS type field-effect transistor with at least one of the source and drain regions is formed by the use of a schottky contact 失效
标题翻译：通过使用肖特基接触形成具有源极和漏极区域中的至少一个的碳化硅MOS型场效应晶体管
公开(公告)号：US5216264A
公开(公告)日：1993-06-01
申请号：US759933
申请日：1991-09-16
申请人： Yoshihisa Fujii , Akira Suzuki , Katsuki Furukawa , Mitsuhiro Shigeta
发明人： Yoshihisa Fujii , Akira Suzuki , Katsuki Furukawa , Mitsuhiro Shigeta
IPC分类号： H01L29/24 , H01L29/78
CPC分类号： H01L29/1608 , H01L29/7839 , H01L2924/0002
摘要： A silicon carbide field-effect transistor is disclosed which includes an MOS structure composed successively of a silicon carbide layer, a gate insulator film, and a gate electrode. The field-effect transistor has source and drain regions formed in the silicon carbide layer, between which the MOS structure is disposed, wherein at least one of the source and drain regions is formed by the use of a Schottky contact on the silicon carbide layer.
摘要翻译：公开了一种碳化硅场效应晶体管，其包括依次由碳化硅层，栅绝缘膜和栅电极组成的MOS结构。场效应晶体管具有形成在碳化硅层中的源极和漏极区域，其间设置有MOS结构，其中源极和漏极区域中的至少一个通过在碳化硅层上使用肖特基接触形成。

10. 发明授权

US5063421A Silicon carbide light emitting diode having a pn junction 失效
标题翻译：具有pn结的碳化硅发光二极管
公开(公告)号：US5063421A
公开(公告)日：1991-11-05
申请号：US390600
申请日：1989-08-07
申请人： Akira Suzuki , Katsuki Furukawa , Mitsuhiro Shigeta , Yoshihisa Fujii
发明人： Akira Suzuki , Katsuki Furukawa , Mitsuhiro Shigeta , Yoshihisa Fujii
IPC分类号： H01L33/34 , H01L33/40
CPC分类号： H01L33/343 , H01L33/0054
摘要： A silicon carbide light emitting diode having a pn junction is disclosed which comprises a semiconductor substrate, a first silicon carbide single-crystal layer of one conductivity formed on the substrate, and a second silicon carbide single-crystal layer of the opposite conductivity formed on the first silicon carbide layer, the first and second silicon carbide layers constituting the pn junction, wherein at least one of the first and second silicon carbide layers contains a tetravalent transition element as a luminescent center.
摘要翻译：公开了一种具有pn结的碳化硅发光二极管，其包括半导体衬底，形成在衬底上的一种导电性的第一碳化硅单晶层和形成在衬底上的相反电导率的第二碳化硅单晶层第一碳化硅层，构成pn结的第一和第二碳化硅层，其中第一和第二碳化硅层中的至少一个含有四价过渡元素作为发光中心。

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