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1. 发明申请

US20050203250A1 Pressure-sensitive adhesive film for the suface protection of semiconductor wafers and method for protection of semiconductor wafers with the film 有权
标题翻译：用于半导体晶片的表面保护的压敏粘合剂膜以及用该膜保护半导体晶片的方法
公开(公告)号：US20050203250A1
公开(公告)日：2005-09-15
申请号：US10507245
申请日：2003-03-26
申请人： Masafumi Miyakawa , Makoto Kataoka , Jun Nakashima , Yoshihisa Fujii , Shinichi Hayakawa , Yasuhisa Fujii
发明人： Masafumi Miyakawa , Makoto Kataoka , Jun Nakashima , Yoshihisa Fujii , Shinichi Hayakawa , Yasuhisa Fujii
IPC分类号： C09J7/02 , H01L21/68 , C08F8/00
CPC分类号： H01L21/6836 , C09J7/22 , C09J7/38 , C09J2203/326 , H01L2221/68327 , Y10T428/31935
摘要： A surface protecting adhesive film for a semiconductor wafer in which an adhesive layer is formed on one surface of a base film, wherein the adhesive layer comprises 100 weight parts of a polymer (A) having a functional group capable of reacting with a cross-linking agent and a temperature in a range of from −50° C. to 5° C. at which tan δ of a dynamic viscoelasticity is maximized, from 10 weight parts to 100 weight parts of a polymer (B) having a functional group capable of reacting with a cross-linking agent and a temperature in a range of from more than 5° C. to 50° C. at which tan δ of a dynamic viscoelasticity is maximized, and from 0.1 weight part to 10 weight parts of a cross-linking agent (C) having more than 2 cross-linking reactive functional groups in a molecule based on 100 weight parts of total amount of the polymers (A) and (B), and the surface protecting adhesive film for a semiconductor wafer which the thickness of the adhesive layer is from 5 μm to 50 μm has an excellent adhesion, prevention of breakage and contamination resistance.
摘要翻译：一种用于半导体晶片的表面保护粘合剂膜，其中在基膜的一个表面上形成粘合剂层，其中粘合剂层包含100重量份具有能够与交联反应的官能团的聚合物（A）并且在-50℃至5℃的范围内的温度，其中动态粘弹性的tanδ最大化，10重量份至100重量份具有能够具有以下官能团的官能团的聚合物（B）与交联剂反应，并且在大于5℃至50℃的范围内的温度，动态粘弹性的tanδ最大化，0.1重量份至10重量份的交联剂，基于100重量份聚合物（A）和（B）的总量，在分子中具有多于2个交联反应性官能团的交联剂（C）和半导体晶片的表面保护粘合剂膜，其厚度的粘合剂层为5〜50μm 具有优异的附着力，防止破损和抗污染。

2. 发明授权

US07201969B2 Pressure-sensitive adhesive film for the surface protection of semiconductor wafers and method for protection of semiconductor wafers with the film 有权
标题翻译：用于半导体晶片的表面保护的压敏粘合剂膜以及用该膜保护半导体晶片的方法
公开(公告)号：US07201969B2
公开(公告)日：2007-04-10
申请号：US10507245
申请日：2003-03-26
申请人： Masafumi Miyakawa , Makoto Kataoka , Jun Nakashima , Yoshihisa Saimoto , Shinichi Hayakawa , Yasuhisa Fujii
发明人： Masafumi Miyakawa , Makoto Kataoka , Jun Nakashima , Yoshihisa Saimoto , Shinichi Hayakawa , Yasuhisa Fujii
IPC分类号： B32B27/30
CPC分类号： H01L21/6836 , C09J7/22 , C09J7/38 , C09J2203/326 , H01L2221/68327 , Y10T428/31935
摘要： A surface protecting adhesive film for a semiconductor wafer in which an adhesive layer is formed on one surface of a base film, wherein the adhesive layer comprises 100 weight parts of a polymer (A) having a functional group capable of reacting with a cross-linking agent and a temperature in a range of from −50° C. to 5° C. at which tan δ of a dynamic viscoelasticity is maximized, from 10 weight parts to 100 weight parts of a polymer (B) having a functional group capable of reacting with a cross-linking agent and a temperature in a range of from more than 5° C. to 50° C. at which tan δ of a dynamic viscoelasticity is maximized, and from 0.1 weight part to 10 weight parts of a cross-linking agent (C) having more than 2 cross-linking reactive functional groups in a molecule based on 100 weight parts of total amount of the polymers (A) and (B), and the surface protecting adhesive film for a semiconductor wafer which the thickness of the adhesive layer is from 5 μm to 50 μm has an excellent adhesion, prevention of breakage and contamination resistance.
摘要翻译：一种用于半导体晶片的表面保护粘合剂膜，其中在基膜的一个表面上形成粘合剂层，其中粘合剂层包含100重量份具有能够与交联反应的官能团的聚合物（A）并且在-50℃至5℃的范围内的温度，其中动态粘弹性的tanδ最大化，10重量份至100重量份具有能够具有以下官能团的官能团的聚合物（B）与交联剂反应，并且在大于5℃至50℃的范围内的温度，动态粘弹性的tanδ最大化，0.1重量份至10重量份的交联剂，基于100重量份聚合物（A）和（B）的总量，在分子中具有多于2个交联反应性官能团的交联剂（C）和半导体晶片的表面保护粘合剂膜，其厚度的粘合剂层为5〜50μm 具有优异的附着力，防止破损和抗污染。

3. 发明授权

US06273791B1 Method of producing semiconductor wafer 有权
标题翻译：半导体晶圆的制造方法
公开(公告)号：US06273791B1
公开(公告)日：2001-08-14
申请号：US09319968
申请日：1999-06-14
申请人： Makoto Kataoka , Yasuhisa Fujii , Kentaro Hirai , Hideki Fukumoto
发明人： Makoto Kataoka , Yasuhisa Fujii , Kentaro Hirai , Hideki Fukumoto
IPC分类号： B24B100
CPC分类号： H01L21/6836 , B24B37/042 , H01L21/304 , H01L2221/68327
摘要： A method of producing a semiconductor wafer, which can prevent the breakage of a wafer, and also can reduce the working time in a series of operations attended by back surface grinding of the semiconductor wafer. The method involves producing a semiconductor wafer wherein an adhesive tape is applied on the surface of the semiconductor wafer and, after grinding the back surface of the semiconductor wafer using a grinding machine, the adhesive tape is peeled off, said process comprises using an adhesive tape having heat shrinkability as the adhesive tape, grinding the back surface of the semiconductor wafer and heating the adhesive tape in the grinding machine, thereby peeling off the adhesive tape from the surface of the semiconductor wafer.
摘要翻译：一种半导体晶片的制造方法，其能够防止晶片的破损，并且还可以减少半导体晶片的背面研磨所引起的一系列操作中的工作时间。该方法包括制造半导体晶片，其中将粘合带施加在半导体晶片的表面上，并且在使用研磨机研磨半导体晶片的背表面之后，将胶带剥离，所述方法包括使用胶带作为粘合带具有热收缩性，研磨半导体晶片的背面并加热研磨机中的粘合带，从而从半导体晶片的表面剥离粘合带。

4. 发明授权

US6159827A Preparation process of semiconductor wafer 失效
标题翻译：半导体晶圆的制备工艺
公开(公告)号：US6159827A
公开(公告)日：2000-12-12
申请号：US285702
申请日：1999-04-05
申请人： Makoto Kataoka , Yasuhisa Fujii , Kentaro Hirai , Hideki Fukumoto , Masatoshi Kumagai
发明人： Makoto Kataoka , Yasuhisa Fujii , Kentaro Hirai , Hideki Fukumoto , Masatoshi Kumagai
IPC分类号： H01L21/304 , H01L21/68 , H01L21/46 , H01L21/78
CPC分类号： H01L21/6836 , H01L21/304 , H01L2221/68327 , Y10S156/941 , Y10S438/928 , Y10S438/974 , Y10S438/976 , Y10S438/977 , Y10T156/19
摘要： An object of the invention is to provide a preparation process of a semiconductor wafer, in which breakage of the wafer on grinding the back surface of the wafer and on peeling the adhesive tape is prevented, and the operation time can be reduced. The preparation process of a semiconductor wafer comprises the steps of: adhering an adhesive tape on a front surface of a semiconductor wafer; grinding a back surface of the semiconductor wafer by a grinding machine; peeling the adhesive tape; and cleaning the front surface of the semiconductor wafer, wherein an adhesive tape having heat shrinkability is used as the adhesive tape, and after grinding the back surface of the semiconductor wafer, warm water at a temperature of from 50 to 99.degree. C. is poured to peel the adhesive tape in a wafer cleaning machine, and the front surface of the semiconductor wafer is cleaned in the wafer cleaning machine.
摘要翻译：本发明的目的是提供一种半导体晶片的制备方法，其中防止在研磨晶片的背面和剥离胶带时晶片破损，并且可以降低操作时间。半导体晶片的制备方法包括以下步骤：将粘合带粘附在半导体晶片的前表面上; 通过研磨机研磨半导体晶片的背面; 剥去胶带; 并且清洗半导体晶片的前表面，其中使用具有热收缩性的粘合带作为粘合带，并且在研磨半导体晶片的背表面之后，将温度为50至99℃的温水倒入将晶片清洗机中的胶带剥离，在晶圆清洗机中清洗半导体晶片的前表面。

5. 发明授权

US06730595B2 Protecting method for semiconductor wafer and surface protecting adhesive film for semiconductor wafer used in said method 有权
标题翻译：用于所述方法的半导体晶片的半导体晶片和表面保护粘合膜的保护方法
公开(公告)号：US06730595B2
公开(公告)日：2004-05-04
申请号：US10003227
申请日：2001-12-06
申请人： Yoshihisa Saimoto , Yasuhisa Fujii , Makoto Kataoka , Kentaro Hirai , Hideki Fukumoto , Takanobu Koshimizu
发明人： Yoshihisa Saimoto , Yasuhisa Fujii , Makoto Kataoka , Kentaro Hirai , Hideki Fukumoto , Takanobu Koshimizu
IPC分类号： H01L2144
CPC分类号： H01L21/6835 , C09J7/22 , C09J7/38 , C09J2203/326 , H01L21/6836 , H01L24/27 , H01L24/83 , H01L2221/68327 , H01L2221/6834 , H01L2224/274 , H01L2224/2919 , H01L2224/8319 , H01L2224/8385 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01027 , H01L2924/01032 , H01L2924/01033 , H01L2924/01056 , H01L2924/01075 , H01L2924/01082 , H01L2924/0665 , H01L2924/07802 , H01L2924/12042 , H01L2924/00 , H01L2924/3512
摘要： This invention aims to provide a protecting method for a semiconductor wafer which can prevent breakage of a semiconductor wafer even when a semiconductor wafer is thinned to a thickness of 200 &mgr;m or less, and a surface protecting adhesive film for a semiconductor wafer used in the protecting method. According to this invention, there is provided a protecting method for a semiconductor wafer comprising a first step of adhering a surface protecting adhesive film for a semiconductor wafer to a circuit-formed surface of the semiconductor wafer, a second step of processing a non-circuit-formed surface of the semiconductor wafer and a third step of adhering a bonding film for die bonding to the non-circuit-formed surface of the semiconductor wafer, characterized in that the third step is performed without peeling the surface protecting adhesive film for the semiconductor wafer, and an adhesive film in which an adhesive layer is formed on one surface of a substrate film at least one layer of which is made of a resin having a melting point of 200° C. or more is used, and a surface protecting adhesive film for a semiconductor wafer used in the protecting method.
摘要翻译：本发明的目的在于提供一种用于半导体晶片的保护方法，即使将半导体晶片减薄至200μm以下的厚度，也可以防止半导体晶片的破损，以及用于保护半导体晶片的表面保护用粘接膜方法。根据本发明，提供了一种用于半导体晶片的保护方法，包括将用于半导体晶片的表面保护粘合剂膜粘合到半导体晶片的电路形成表面的第一步骤，第二步骤，并且将用于管芯接合的接合膜粘合到半导体晶片的非电路形成表面的第三步骤，其特征在于，在不剥离半导体的表面保护粘合剂膜的情况下进行第三步骤晶片和粘合剂层，其中在基材膜的一个表面上形成粘合剂层，至少一层由熔点为200℃以上的树脂制成，表面保护粘合剂用于保护方法中使用的半导体晶片的膜。

6. 发明授权

US08680599B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08680599B2
公开(公告)日：2014-03-25
申请号：US13207002
申请日：2011-08-10
申请人： Hiroshi Mitsuyama , Yasuhisa Fujii , Keiichi Yamada
发明人： Hiroshi Mitsuyama , Yasuhisa Fujii , Keiichi Yamada
IPC分类号： H01L27/108 , H01L21/8242
CPC分类号： H01L23/5223 , H01L21/7687 , H01L21/76883 , H01L28/75 , H01L2924/0002 , H01L2924/00
摘要： To provide a more reliable semiconductor device including a lower-cost and more reliable capacitor and a method of manufacturing the same. This manufacturing method comprises the steps of: preparing a semiconductor substrate; and forming, over one of the major surfaces of the semiconductor substrate, a first metal electrode including an aluminum layer, a dielectric layer over the first metal electrode, and a second metal electrode over the dielectric layer. In the step of forming the first metal electrode, the aluminum layer is formed so that the surface thereof satisfies a relationship of Rmax
摘要翻译：为了提供一种更可靠的半导体装置及其制造方法。该制造方法包括以下步骤：制备半导体衬底; 以及在所述半导体衬底的一个主表面上形成第一金属电极，所述第一金属电极包括铝层，所述第一金属电极上的电介质层和所述电介质层上的第二金属电极。在形成第一金属电极的步骤中，形成铝层，使得其表面满足Rmax <80nm，Rms <10nm和Ra <9nm的关系。形成第一金属电极的步骤包括以下步骤：形成至少一个第一阻挡层; 在所述第一阻挡层上形成所述铝层; 并使构成铝层的结晶重结晶。

7. 发明授权

US08444396B2 Fluid transferring system and micropump suitable therefor 失效
公开(公告)号：US08444396B2
公开(公告)日：2013-05-21
申请号：US12699331
申请日：2010-02-03
申请人： Kusunoki Higashino , Yasuhisa Fujii , Shunichi Hayamizu , Yasuhiro Sando
发明人： Kusunoki Higashino , Yasuhisa Fujii , Shunichi Hayamizu , Yasuhiro Sando
IPC分类号： F04B25/00 , F04B17/03
CPC分类号： F16K99/0001 , B01L3/5027 , F04B43/043 , F15C5/00 , F16K99/0015 , F16K99/0048 , F16K2099/0074 , F16K2099/0094 , Y10T137/2224 , Y10T137/2273
摘要： Disclosed herein is a micro fluid transferring system that comprises a micropump having a chamber, a first fluid transferring portion connected to the chamber, and a second fluid transferring portion connected to the chamber. This system is characterized in that at least one of the first and second fluid transferring portions comprises a pressure absorbing section for absorbing or alleviating a liquid vibrational pressure therein.

8. 发明申请

US20110303086A1 AIR PRE-TREATMENT DEVICE 有权
标题翻译：空气预处理装置
公开(公告)号：US20110303086A1
公开(公告)日：2011-12-15
申请号：US13058944
申请日：2010-06-15
申请人： Yasuhisa Fujii , Masahiro Ueda
发明人： Yasuhisa Fujii , Masahiro Ueda
IPC分类号： B03C3/68 , B01D46/00
CPC分类号： B03C3/09 , B01D46/0024 , B01D46/10 , B01D46/442 , B01D2275/30 , B03C3/025 , B03C3/12 , B03C3/155 , B03C2201/24 , B03C2201/30
摘要： The present technology provides an air pre-treatment and monitoring device that includes an inlet port configured to receive an air flow and an outlet port configured to expel the air flow. The illustrative air pre-treatment device further includes a multiple-stage filter arranged between the inlet and outlet ports and that is configured to filter particles from the air flow.
摘要翻译：本技术提供了一种空气预处理和监测装置，其包括构造成接收空气流的入口端口和被配置为排出空气流的出口端口。示例性空气预处理装置还包括布置在入口和出口之间的多级过滤器，并且被配置为从空气流中过滤颗粒。

9. 发明授权

US07647032B2 Oscillation control device and synchronization system 有权
标题翻译：振荡控制装置和同步系统
公开(公告)号：US07647032B2
公开(公告)日：2010-01-12
申请号：US11541634
申请日：2006-10-03
申请人： Michito Imae , Tomonari Suzuyama , Yasuhisa Fujii , Yoshinobu Kasumi , Eiji Ogita , Toshiaki Kawakami
发明人： Michito Imae , Tomonari Suzuyama , Yasuhisa Fujii , Yoshinobu Kasumi , Eiji Ogita , Toshiaki Kawakami
IPC分类号： H04B1/16 , H04B1/06
CPC分类号： H03L7/00
摘要： An oscillation control device for controlling a frequency of an oscillator located at the remote site from a standard laboratory having a standard oscillator. The control device includes: a comparison section to compare a frequency of the frequency signal synchronized with a radio signal produced by a signal processing section with a frequency of a oscillation signal outputted from an oscillator to be controlled, an acquisition section to obtain, through a communication network, a comparison result which is obtained by a comparison of a frequency of the standard oscillator held by the standard laboratory and a frequency of the radio signal, a calculation section to calculate deviation between the frequency of the oscillator to be controlled and the frequency of the standard oscillator based on their comparison, and a control section to control the frequency of the oscillator to be controlled, based on the deviation calculated.
摘要翻译：一种振荡控制装置，用于从具有标准振荡器的标准实验室控制位于远端的振荡器的频率。控制装置包括：比较部，其将与由信号处理部生成的无线信号同步的频率信号的频率与从被控制的振荡器输出的振荡信号的频率进行比较;获取部，通信网络，通过比较由标准实验室保持的标准振荡器的频率和无线电信号的频率获得的比较结果，计算部分，用于计算要控制的振荡器的频率与频率之间的偏差基于其比较的标准振荡器，以及基于计算的偏差来控制要控制的振荡器的频率的控制部分。

10. 发明申请

US20070077902A1 Oscillation control device and synchronization system 有权
标题翻译：振荡控制装置和同步系统
公开(公告)号：US20070077902A1
公开(公告)日：2007-04-05
申请号：US11541634
申请日：2006-10-03
申请人： Michito Imae , Tomonari Suzuyama , Yasuhisa Fujii , Yoshinobu Kasumi , Eiji Ogita , Toshiaki Kawakami
发明人： Michito Imae , Tomonari Suzuyama , Yasuhisa Fujii , Yoshinobu Kasumi , Eiji Ogita , Toshiaki Kawakami
IPC分类号： H04B1/18
CPC分类号： H03L7/00
摘要： An oscillation control device for controlling a frequency of an oscillator located at the remote site from a standard laboratory having a standard oscillator. The control device includes: a comparison section to compare a frequency of the frequency signal synchronized with a radio signal produced by a signal processing section with a frequency of a oscillation signal outputted from an oscillator to be controlled, an acquisition section to obtain, through a communication network, a comparison result which is obtained by a comparison of a frequency of the standard oscillator held by the standard laboratory and a frequency of the radio signal, a calculation section to calculate deviation between the frequency of the oscillator to be controlled and the frequency of the standard oscillator based on their comparison, and a control section to control the frequency of the oscillator to be controlled, based on the deviation calculated.
摘要翻译：一种振荡控制装置，用于从具有标准振荡器的标准实验室控制位于远端的振荡器的频率。控制装置包括：比较部，其将与由信号处理部生成的无线信号同步的频率信号的频率与从被控制的振荡器输出的振荡信号的频率进行比较;获取部，通信网络，通过比较由标准实验室保持的标准振荡器的频率和无线电信号的频率获得的比较结果，计算部分，用于计算要控制的振荡器的频率与频率之间的偏差基于其比较的标准振荡器，以及基于计算的偏差来控制要控制的振荡器的频率的控制部分。

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