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    • 4. 发明授权
    • Laser diode array with lateral coupling
    • 具有横向耦合的激光二极管阵列
    • US4875217A
    • 1989-10-17
    • US196387
    • 1988-05-20
    • Franz KappelerThomas WolfBernhard Stegmueller
    • Franz KappelerThomas WolfBernhard Stegmueller
    • H01S5/00H01S5/22H01S5/40
    • H01S5/4031H01S5/22
    • A laser diode array includes ridges formed in a cover layer forming an upper layer of a semiconductor body, the ridges being provided with separate contacts to produce laser active stripes in an active layer situated between a substrate and the cover layer. The thickness of the cover layer between the ridges is such that lateral coupling is achieved, while the thickness of the cover layer in the region adjoining the outside edges of the outer ridges is small enough so that lateral emission losses are low as the result of quasi-index guidance based on the metal clad ridge waveguide principle. A second embodiment provides wave guidance at the outside edges of the outer ridges by a buried heterostructure principle.
    • 激光二极管阵列包括形成在形成半导体本体的上层的覆盖层中的脊,脊设置有单独的触点,以在位于基底和覆盖层之间的有源层中产生激光有源条纹。 脊之间的覆盖层的厚度使得实现横向耦合,而与外脊的外边缘相邻的区域中的覆盖层的厚度足够小,使得侧向发射损耗低于准 基于金属包脊波导原理的指导指导。 第二实施例通过掩埋异质结构原理在外脊的外边缘处提供波导。