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1. 发明授权

US5784398A Optoelectronic component having codirectional mode coupling 失效
标题翻译：具有双向耦合的光电元件
公开(公告)号：US5784398A
公开(公告)日：1998-07-21
申请号：US731451
申请日：1996-10-15
申请人： Markus-Christian Amann , Stefan Illek
发明人： Markus-Christian Amann , Stefan Illek
IPC分类号： G02B6/26 , G02B6/12 , G02B6/14 , G02B6/34 , G02F1/313 , H01S3/098 , H01S5/00 , H01S5/062 , H01S5/10 , H01S3/19
CPC分类号： G02B6/12007 , G02B6/4215 , G02F1/3132 , H01S5/1032 , G02B2006/12107 , G02B2006/12147 , G02F1/3133 , G02F2001/3135 , G02F2201/30 , G02F2201/302 , H01S5/06206 , H01S5/1035
摘要： An optoelectric component has two waveguide layers and a layer with a periodic structure, which layers are arranged parallel to one another and are dimensioned so that a codirectional coupling is produced between modes guided in each of the waveguide layers. In order to prevent undesirable reflections, changes in the effective refractive index in the periodic structure is gradually changed along the direction of propagation. This change can be by the boundary of the periodic structure extending at an angle other than a right angle to the direction of propagation, either in a vertical or a lateral direction. The change can also be accomplished by a gradual change of the composition at the boundary of the periodic structure and adjacent portions or sections.
摘要翻译：光电部件具有两个波导层和具有周期性结构的层，这些层彼此平行地布置并且尺寸设计成使得在每个波导层中引导的模式之间产生编码耦合。为了防止不期望的反射，周期性结构中的有效折射率的变化沿着传播方向逐渐变化。该变化可以是在垂直方向或横向方向上以与传播方向成直角的角度延伸的周期性结构的边界。该变化也可以通过在周期性结构和相邻部分或部分的边界处的组成的逐渐改变来实现。

2. 发明授权

US5511084A Tunable laser diode 失效
标题翻译：可调谐激光二极管
公开(公告)号：US5511084A
公开(公告)日：1996-04-23
申请号：US372936
申请日：1995-01-17
申请人： Markus-Christian Amann
发明人： Markus-Christian Amann
IPC分类号： H01S5/00 , H01S5/062 , H01S5/10 , H01S3/10 , H01S3/19
CPC分类号： H01S5/1032 , H01S5/06206 , H01S5/1035
摘要： Tunable laser diode having an integrated Mach-Zehnder interferometer is provided. A first and a second waveguide are arranged vertically relative to one another with respect to the layer plane as stripe-shaped layers. The second waveguide extends over the entire resonator length between mirror end faces, whereas the first waveguide is only present in one or more interconnected sections provided as coupling region. The waveguides are arranged in such close proximity to one another in this coupling region that coupling occurs between modes guided in the waveguides. An active layer and a tuning layer are arranged vertically relative to one another in these waveguides. A separate current injection into this tuning layer and into this active layer are present, and an interconnected section of the waveguide not present over the entire resonator length is a respective, natural multiple of the coupling length of two specific modes in the waveguides to be coupled.
摘要翻译：提供具有集成的马赫 - 曾德尔干涉仪的可调谐激光二极管。第一和第二波导相对于作为条形层的层平面彼此垂直地布置。第二波导在镜端面之间在整个谐振器长度上延伸，而第一波导仅存在于作为耦合区域提供的一个或多个互连部分中。波导在该耦合区域中彼此靠近地布置，使得耦合发生在在波导中引导的模式之间。在这些波导中，有源层和调谐层相对于彼此垂直地布置。存在对该调谐层和该有源层的单独的电流注入，并且在整个谐振器长度上不存在的波导的互连部分是要耦合的波导中的两个特定模式的耦合长度的相应的自然倍数。

3. 发明授权

US4742525A Coupled laser diode arrangement 失效
标题翻译：耦合激光二极管布置
公开(公告)号：US4742525A
公开(公告)日：1988-05-03
申请号：US773018
申请日：1985-09-06
申请人： Jochen Heinen , Markus-Christian Amann
发明人： Jochen Heinen , Markus-Christian Amann
IPC分类号： H01S5/00 , H01S5/40 , H01S3/18
CPC分类号： H01S5/4043
摘要： An arrangement of two coupled laser diodes comprises first and second two-layer structures, each structure having a strip-shaped laser-active zone, and a middle layer. The first and second two-layer structures are symmetrically constructed relative to the middle layer at opposite sides thereof and directly across from each other so that the strip-shaped laser-active zones in each of the two-layer structures are positioned at a defined spacing directly across from each other and in symmetrical manner with respect to the middle layer. The middle layer is epitaxially deposited with a precisely dimensioned thickness relative to the two coupled laser diodes being employed.
摘要翻译：两个耦合激光二极管的布置包括第一和第二两层结构，每个结构具有带状激光活性区和中间层。第一和第二两层结构相对于中间层在其相对侧处对称地构造并且彼此直接相交，使得两层结构中的每一个中的带状激光活性区域以限定的间隔直接相对于中间层相对并且以对称的方式。相对于所采用的两个耦合的激光二极管，中间层被外延沉积成具有精确尺寸的厚度。

4. 发明授权

US4682337A Laser diode with buried active layer and lateral current limitation by use of a self-adjusted pn-junction 失效
标题翻译：具有埋入有源层的激光二极管和通过使用自调节pn结的横向电流限制
公开(公告)号：US4682337A
公开(公告)日：1987-07-21
申请号：US776156
申请日：1985-09-13
申请人： Markus-Christian Amann
发明人： Markus-Christian Amann
IPC分类号： H01S5/00 , H01L33/00 , H01S5/20 , H01S5/227 , H01S3/19
CPC分类号： H01S5/227 , H01S5/20 , H01S5/2059 , H01S5/2275
摘要： A laser diode has regions laterally flanking a strip-shaped laser junction. In these regions a pn-junction inhibiting the laser current is generated by a re-doping which has been created by dopant diffusion from a given layer through an adjoining, further layer into another layer spaced from the given layer by the further layer.
摘要翻译：激光二极管具有横向于带状激光器结的侧面的区域。在这些区域中，抑制激光电流的pn结通过再掺杂产生，该掺杂已经通过掺杂剂从给定层通过相邻的另外的层扩散到通过另外的层与给定层间隔开的另一层而产生。

5. 发明授权

US07376163B2 Method for producing a waveguide structure in a surface-emitting semiconductor laser and surface-emitting semiconductor laser 有权
标题翻译：在表面发射半导体激光器和表面发射半导体激光器中制造波导结构的方法
公开(公告)号：US07376163B2
公开(公告)日：2008-05-20
申请号：US10544333
申请日：2003-11-19
申请人： Markus Christian Amann
发明人： Markus Christian Amann
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/18308 , H01S5/18369 , H01S5/3095 , H01S5/34306 , H01S2301/166 , H01S2301/176
摘要： Methods for producing surface-emitting semi-conductor lasers with tunable waveguiding are disclosed. The laser comprises an active zone containing a pn-transition, surrounded by a first n-doped semiconductor layer and at least one p-doped semiconductor layer. In addition to a tunnel junction on the p-side of the active zone, the tunnel junction borders a second n-doped semi-conductor layer with the exception of an area forming an aperture. An n-doped layer is provided between the layer provided for the tunnel junction and the at least one p-doped semiconductor layer. The tunnel junction may be arranged in a maximum or minimum of the vertical intensity distribution of the electric field strength. This enables surface-emitting laser diodes to be produced in high yields with stabilization of the lateral single-mode operation, high performance and wave guiding properties.
摘要翻译：公开了用于制造具有可调谐波导的表面发射半导体激光器的方法。该激光器包括一个包含pn跃迁的有源区，被第一n掺杂半导体层和至少一个p掺杂半导体层围绕。除了在有源区的p侧上的隧道结之外，除了形成孔的区域之外，隧道结与第二n掺杂半导体层相接合。在为隧道结提供的层和至少一个p掺杂半导体层之间提供n掺杂层。隧道结可以布置在电场强度的垂直强度分布的最大或最小值中。这使得能够以高产率制造表面发射激光二极管，同时稳定侧向单模操作，高性能和波导性能。

6. 发明授权

US07170917B2 Surface-emitting semiconductor laser 有权
标题翻译：表面发射半导体激光器
公开(公告)号：US07170917B2
公开(公告)日：2007-01-30
申请号：US10468183
申请日：2002-02-15
申请人： Markus-Christian Amann , Markus Ortsieffer
发明人： Markus-Christian Amann , Markus Ortsieffer
IPC分类号： H01S5/183
CPC分类号： H01S5/18369 , H01S5/0217 , H01S5/02476 , H01S5/0421 , H01S5/0425 , H01S5/18308 , H01S5/18375 , H01S5/18377 , H01S5/3072 , H01S5/3095
摘要： The invention relates to a semiconductor laser of the surface emitting type. In order to provide a semiconductor laser which can be operated at normal ambient temperatures and has stable long-term characteristics, the semiconductor laser comprises an active zone having a pn transition, a first n-doped semiconductor layer on the n side of the active zone, a structured tunnel contact on the p side of the active zone, which forms a conductive transition to a second n-doped semiconductor layer on the p-side of the active zone, a structured dielectric mirror, which is applied to the second n-doped semiconductor layer, a contact layer, which forms a contact with the second n-doped semiconductor layer at the places where the dielectric mirror is not applied, and a diffusion barrier between the contact layer and the second n-doped semiconductor layer.
摘要翻译：本发明涉及一种表面发射型半导体激光器。为了提供可以在正常环境温度下操作并且具有稳定的长期特性的半导体激光器，半导体激光器包括具有pn跃迁的有源区，在有源区的n侧上的第一n掺杂半导体层，在有源区的p侧上的结构化隧道接触，其形成到有源区的p侧上的第二n掺杂半导体层的导电转变，构造的介电镜，施加到第二n- 掺杂半导体层，在不施加电介质镜的位置与第二n掺杂半导体层形成接触的接触层以及接触层和第二n掺杂半导体层之间的扩散阻挡层。

7. 发明授权

US06664571B1 Surface-emitting diode radiation source 有权
标题翻译：表面发射二极管辐射源
公开(公告)号：US06664571B1
公开(公告)日：2003-12-16
申请号：US09806260
申请日：2001-06-21
申请人： Markus-Christian Amann
发明人： Markus-Christian Amann
IPC分类号： H01L3300
CPC分类号： H01L33/0025
摘要： Surface-emitting diode emission source (1) with an active layer (10) used to create optical emissions (101, 102, 103) that is located between a confinement layer (11) consisting of semi-conductor material of a conductivity type (n) and a confinement layer (12) consisting of semi-conductor material of a conductivity type (p) opposed to the first conductivity type (n), whereby an attenuation device (20) is present to suppress the emission components (103) spreading in direction (C) parallel to the layer plane (100) of the active layer (10). Advantage: Output of emission components spreading essentially perpendicular to the layer plane is improved.
摘要翻译：具有活性层（10）的表面发射二极管发射源（1）用于产生光发射（101,102,103），其位于由导电类型（n）的半导体材料构成的约束层（11）之间）和由与第一导电类型（n）相对的导电类型（p）的半导体材料组成的限制层（12），由此存在衰减装置（20）以抑制发射成分（103）在方向（C）平行于有源层（10）的层平面（100）。优点：改善基本上垂直于层平面扩散的发射分量的输出。

8. 发明授权

US5260960A Tunable semiconductor laser on a semi-insulating substrate 失效
标题翻译：可半导体半导体激光器在半绝缘基板上
公开(公告)号：US5260960A
公开(公告)日：1993-11-09
申请号：US872401
申请日：1992-04-23
申请人： Markus-Christian Amann , Stefan Illek , Wolfgang Thulke
发明人： Markus-Christian Amann , Stefan Illek , Wolfgang Thulke
IPC分类号： H01S5/00 , H01S5/02 , H01S5/026 , H01S5/06 , H01S5/062 , H01S5/227 , H01S3/19
CPC分类号： H01S5/06206 , H01S5/227 , H01S5/0208 , H01S5/2275
摘要： A tunable laser diode on a semi-insulating substrate having a stripe-shaped layer structure has an intermediate layer between an active layer and a tuning layer that is grown-over by an confinement layer that is doped for the same conductivity type as the intermediate layer. An oppositely doped, lateral region is electrically connected via an identically doped lower region to the active layer. An upper region is likewise oppositely doped and is electrically connected to the tuning layer. A contact layer is essentially planarly applied on the surface of the confinement layer and has respective portions on the appertaining regions on which the contacts provided with adequate bond areas are applied with a further contact layer for the common contact.
摘要翻译：具有条形层结构的半绝缘衬底上的可调谐激光二极管在有源层和调谐层之间具有中间层，该中间层由掺杂与中间层相同的导电类型的约束层生长。相对掺杂的横向区域经由相同掺杂的下部区域电连接到有源层。上部区域同样相反地掺杂并且电连接到调谐层。接触层基本上平面地施加在限制层的表面上，并且在其上具有足够粘合区域的触点上的相应部分被施加有用于共同接触的另外的接触层。

9. 发明授权

US4918701A Semiconductor laser arrangement and method for the operation thereof 失效
标题翻译：半导体激光装置及其操作方法
公开(公告)号：US4918701A
公开(公告)日：1990-04-17
申请号：US389995
申请日：1989-08-07
申请人： Markus-Christian Amann , Bernhard Stegmueller
发明人： Markus-Christian Amann , Bernhard Stegmueller
IPC分类号： H01S5/00 , G02F3/02 , H01S5/042 , H01S5/062 , H01S5/0625 , H01S5/10 , H01S5/40 , H01S5/50
CPC分类号： G02F3/026 , H01S5/0625 , H01S5/4031 , H01S5/5009 , H01S2301/14 , H01S5/06236 , H01S5/1021
摘要： A semiconductor laser arrangement is composed of two quasi-index guided laser diodes each with a light intensifying layer arranged in a plane shared by both diodes. The characteristics of the laser diodes are such that one polarization state predominates in one diode, while the other polarization state predominates in the other diode. Any desired degree of polarization dependency of the gain is set by the ratio of the operating currents of the two diodes, so that isotropic amplification can be achieved.
摘要翻译：半导体激光装置由两个准折射率引导激光二极管组成，每个激光二极管均布置在由两个二极管共享的平面中。激光二极管的特性使得一个极化状态在一个二极管中占优势，另一个极化状态在另一个二极管中占主导地位。通过两个二极管的工作电流的比率来设定增益的任何期望的偏振度依赖性，从而可以实现各向同性放大。

10. 发明申请

US20100128749A1 Vertical-Cavity Surface-Emitting Semiconductor Laser Diode And Method For The Manufacture Thereof 有权
标题翻译：垂直腔表面发射半导体激光二极管及其制造方法
公开(公告)号：US20100128749A1
公开(公告)日：2010-05-27
申请号：US12623247
申请日：2009-11-20
申请人： Markus-Christian Amann , Markus Ortsiefer
发明人： Markus-Christian Amann , Markus Ortsiefer
IPC分类号： H01S5/187 , H01L21/18
CPC分类号： H01S5/18308 , H01S5/105 , H01S5/18355 , H01S5/18369 , H01S5/3095
摘要： The present invention includes a vertical-cavity surface-emitting semiconductor laser diode having a resonator with a first distributed Bragg reflector, an active zone which has a p-n junction and is embedded into a semiconductor layer sequence, and a second distributed Bragg reflector. The semiconductor laser diode has an emission wavelength λ, wherein a periodic structure is arranged within the resonator as an optical grating made of semiconductive material and dielectric material, the main plane of extension of which is arranged substantially perpendicularly to the direction of emission of the semiconductor laser diode. The periodic structure is in direct contact with at least one of the semiconductor layers embedding the active zone and with at least one of the two distributed Bragg reflectors.
摘要翻译：本发明包括垂直腔表面发射半导体激光二极管，其具有具有第一分布布拉格反射器的谐振器，具有p-n结并嵌入半导体层序列的有源区和第二分布布拉格反射器。半导体激光二极管具有发射波长λ，其中周期性结构布置在谐振器内，作为由半导体材料和电介质材料制成的光栅，其主平面基本上垂直于半导体发射方向激光二极管。周期性结构与嵌入有源区的至少一个半导体层和两个分布式布拉格反射器中的至少一个直接接触。

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