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1. 发明授权

US5260960A Tunable semiconductor laser on a semi-insulating substrate 失效
标题翻译：可半导体半导体激光器在半绝缘基板上
公开(公告)号：US5260960A
公开(公告)日：1993-11-09
申请号：US872401
申请日：1992-04-23
申请人： Markus-Christian Amann , Stefan Illek , Wolfgang Thulke
发明人： Markus-Christian Amann , Stefan Illek , Wolfgang Thulke
IPC分类号： H01S5/00 , H01S5/02 , H01S5/026 , H01S5/06 , H01S5/062 , H01S5/227 , H01S3/19
CPC分类号： H01S5/06206 , H01S5/227 , H01S5/0208 , H01S5/2275
摘要： A tunable laser diode on a semi-insulating substrate having a stripe-shaped layer structure has an intermediate layer between an active layer and a tuning layer that is grown-over by an confinement layer that is doped for the same conductivity type as the intermediate layer. An oppositely doped, lateral region is electrically connected via an identically doped lower region to the active layer. An upper region is likewise oppositely doped and is electrically connected to the tuning layer. A contact layer is essentially planarly applied on the surface of the confinement layer and has respective portions on the appertaining regions on which the contacts provided with adequate bond areas are applied with a further contact layer for the common contact.
摘要翻译：具有条形层结构的半绝缘衬底上的可调谐激光二极管在有源层和调谐层之间具有中间层，该中间层由掺杂与中间层相同的导电类型的约束层生长。相对掺杂的横向区域经由相同掺杂的下部区域电连接到有源层。上部区域同样相反地掺杂并且电连接到调谐层。接触层基本上平面地施加在限制层的表面上，并且在其上具有足够粘合区域的触点上的相应部分被施加有用于共同接触的另外的接触层。

2. 发明授权

US5333141A Modulatable laser diode for high frequencies 失效
标题翻译：可调激光二极管用于高频
公开(公告)号：US5333141A
公开(公告)日：1994-07-26
申请号：US87322
申请日：1993-07-08
申请人： Thomas Wolf , Wolfgang Thulke
发明人： Thomas Wolf , Wolfgang Thulke
IPC分类号： H01S5/00 , H01S5/02 , H01S5/06 , H01S5/062 , H01S5/12 , H01S5/34 , H01S3/10 , H01S3/19
CPC分类号： H01S5/06206 , H01S5/0208 , H01S5/06 , H01S5/12 , H01S5/3428
摘要： A modulatable laser diode for high frequencies, such as a tuneable turn guide distributed feedback laser diode, that has a central layer provided for a separate current supply located between a tuning layer and an active layer. The tuning layer has a quantum well structure. A ridge waveguide is provided for the laser diode and the layer sequence is limited to a strip-shaped mesa on the substrate in order to reduce the parasitic capacitances.
摘要翻译：用于高频的可调制激光二极管，例如可调式转向导向分布反馈激光二极管，其具有为位于调谐层和有源层之间的单独电流供应提供的中心层。调谐层具有量子阱结构。为激光二极管提供脊形波导，并且层序列限于衬底上的条状台面，以便减小寄生电容。

3. 发明授权

US5027364A Laser diode with buried active layer and lateral current limitation 失效
标题翻译：具有埋层有源层和横向电流限制的激光二极管
公开(公告)号：US5027364A
公开(公告)日：1991-06-25
申请号：US455411
申请日：1989-12-18
申请人： Wolfgang Thulke
发明人： Wolfgang Thulke
IPC分类号： H01S5/00 , H01L33/00 , H01S3/06 , H01S5/042 , H01S5/10 , H01S5/223 , H01S5/227 , H01S5/24
CPC分类号： H01S5/0425 , H01S5/10 , H01S5/227 , H01S5/2232 , H01S5/2234 , H01S5/2235 , H01S5/2237 , H01S5/2275 , H01S5/24
摘要： Laser diode with BH double hetero-structure and lateral channels for lateral current limitation, whereby the laser-active stripes are provided with lateral spacer layers and these spacer layers are fashioned before the etching of the lateral channels of a semiconductor material that cannot be attached by the etchant, so that the laser-active stripes have an undamaged, straight line, lateral limitation. This laser diode has a low threshold current and a high differential efficiency given a high output power. Parasitic capacitances are voided by transverse channels and a structured metal contact.
摘要翻译： PCT No.PCT / DE88 / 00234 Sec。 371日期1989年12月18日 102（e）日期1989年12月18日PCT提交1988年4月18日PCT公布。第WO88 / 08215号公报日期为1988年10月20日。具有BH双异质结构和侧向通道的激光二极管用于横向电流限制，由此激光有源条带设置有侧向间隔层，并且在蚀刻侧向通道之前形成这些间隔层不能被蚀刻剂附着的半导体材料，使得激光活性条纹具有未损坏的直线，横向限制。该激光二极管具有低阈值电流和给出高输出功率的高差分效率。寄生电容通过横向通道和结构化金属接触而失效。

4. 发明授权

US4963507A Method and manufacturing a laser diode with buried active layer 失效
标题翻译：方法和制造具有掩埋有源层的激光二极管
公开(公告)号：US4963507A
公开(公告)日：1990-10-16
申请号：US186799
申请日：1988-04-27
申请人： Markus-Christian Amann , Wolfgang Thulke , Gerhard Baumann
发明人： Markus-Christian Amann , Wolfgang Thulke , Gerhard Baumann
IPC分类号： H01S5/00 , H01S5/227
CPC分类号： H01S5/227 , H01S5/2275 , Y10S148/099 , Y10S148/101
摘要： In the manufacture of laser diodes having a stripe-shaped, active layer, a problem arises upon application of lateral layers, particularly of blocking pn-junctions for lateral current conduction, in that these layers are undesired above the active layer. By applying a protective cover layer that will dissolve in super-cooled melts of the material of the lateral layers, before the growth of the lateral layers, the growth of the lateral layers, particularly blocking pn-junctions, above the active stripe is avoided since the cover layer dissolves in the melt given epitaxial application of the lateral layers.
摘要翻译：在具有条形有源层的激光二极管的制造中，在施加横向层，特别是用于横向电流传导的阻挡pn结的应用中出现问题，因为这些层在有源层上方是不期望的。通过在横向层的生长之前施加将溶解在横向层的材料的超冷却熔体中的保护性覆盖层，避免了横向层的生长，特别是阻挡pn结，使活性条上方的生长被避免，因为覆盖层在侧向层的外延应用中溶解在熔体中。

5. 发明授权

US5222087A TTG-DFB laser diode 失效
标题翻译： TTG-DFB激光二极管
公开(公告)号：US5222087A
公开(公告)日：1993-06-22
申请号：US872405
申请日：1992-04-23
申请人： Wolfgang Thulke , Stefan Illek
发明人： Wolfgang Thulke , Stefan Illek
IPC分类号： H01S5/00 , H01S5/026 , H01S5/06 , H01S5/062 , H01S5/12
CPC分类号： H01S5/06206 , H01S5/12
摘要： A TTG-DFB laser diode on a doped substrate having a stripe-shaped layer structure that has an intermediate layer between an active layer and a tuning layer. A confinement layer laterally adjoins this layer structure at both sides, is doped for the same conductivity type as the substrate and is electrically conductively connected to the substrate through an interruption of the layers situated therebelow. An upper region, that respectively extends up to the surface and that is oppositely doped, is formed in the confinement layer above the layer structure. A lateral region, separated therefrom and that is electrically conductively connected via a lower confinement layer to a side of the layer structure facing toward the substrate, is formed in the confinement layer. Contact layers and contacts are applied on the upper region and on the lateral region, and a contact is applied on the substrate, so that separate current injection into both the active layer and the tuning layer is possible through the intermediate layer.
摘要翻译：掺杂衬底上的TTG-DFB激光二极管具有带状层结构，其在有源层和调谐层之间具有中间层。在两侧侧向邻接该层结构的限制层被掺杂用于与衬底相同的导电类型，并且通过中间位于其下的层而导电地连接到衬底。在层结构上方的限制层中形成分别延伸到表面并且相对掺杂的上部区域。在限制层中形成有从其隔开的并且经由下限制层导电连接到层结构面向衬底的一侧的横向区域。接触层和触点施加在上部区域和横向区域上，并且在基板上施加接触，从而可以通过中间层分别注入有源层和调谐层。

6. 发明授权

US5208878A Monolithically integrated laser-diode-waveguide combination 失效
标题翻译：单组分激光二极管波形组合
公开(公告)号：US5208878A
公开(公告)日：1993-05-04
申请号：US769972
申请日：1991-10-02
申请人： Wolfgang Thulke
发明人： Wolfgang Thulke
IPC分类号： G02B6/12 , H01L27/15 , H01S5/00 , H01S5/02 , H01S5/026 , H01S5/042 , H01S5/062 , H01S5/227
CPC分类号： H01L27/15 , H01S5/026 , H01S5/0425 , H01S5/06206 , H01S5/0208 , H01S5/2275
摘要： A monolithically integrated laser diode waveguide combination on a semi-insulating substrate has in an active region thereof a laser diode with a waveguide layer, an intermediate layer, an active layer, and a grating layer arranged between portions of a lower cover layer. Above this laser strip, an upper cover layer with a central contact layer is located thereupon together with a central contact. An activation of the active layer occurs via the lower cover layer, a lateral contact layer applied on the coating layer, and lateral contacts.
摘要翻译：在半绝缘衬底上的单片集成激光二极管波导组合在其有源区域中具有布置在下覆盖层的部分之间的具有波导层，中间层，有源层和光栅层的激光二极管。在该激光条上方，具有中心接触层的上覆盖层与中心接触件一起位于其上。活性层的活化通过下覆盖层，涂覆在涂层上的侧接触层和侧向触点进行。

7. 发明授权

US5008893A Tunable semiconductor laser 失效
标题翻译：可调谐半导体激光器
公开(公告)号：US5008893A
公开(公告)日：1991-04-16
申请号：US480825
申请日：1990-02-15
申请人： Markus-Christian Amann , Gerhard Baumann , Jochen Heinen , Wolfgang Thulke
发明人： Markus-Christian Amann , Gerhard Baumann , Jochen Heinen , Wolfgang Thulke
IPC分类号： H01S5/00 , H01S5/042 , H01S5/062 , H01S5/12
CPC分类号： H01S5/06206 , H01S5/12
摘要： A tunable semiconductor laser which is formed on a substrate 2 which has a first contact 14 on one surface and a third contact 16 on the opposite surface so as to supply the operating current which is laterally limited to a laser-active stripe through a barrier layer 4 l and including a second contact 15 on a ridge waveguide 11, 12, 13 so as to inject charge carriers into a tuning layer 9 mounted adjacent an active layer 6 and which is separated from the active layer by highly doped central layer 10 so as to allow tuning of the laser.
摘要翻译：一种可调谐半导体激光器，其形成在基板2上，该基板2在一个表面上具有第一触点14，并且在相对表面上具有第三触点16，以便通过阻挡层提供侧向限制于激光活性条纹的工作电流并且在脊波导11,12,13上包括第二接触15，以便将电荷载流子注入安装在有源层6附近的调谐层9中，并通过高度掺杂的中心层10与有源层分离，以便以允许调谐激光。

8. 发明授权

US4656636A Method for manufacturing of integrated DFB laser with coupled strip waveguide on a substrate 失效
标题翻译：用于在基板上制造具有耦合条形波导的集成DFB激光器的方法
公开(公告)号：US4656636A
公开(公告)日：1987-04-07
申请号：US810611
申请日：1985-12-23
申请人： Markus-Christian Amann , Hans F. Mahlein , Bernhard Stegmueller , Wolfgang Thulke , Gerhard Winzer , Ulrich Wolff
发明人： Markus-Christian Amann , Hans F. Mahlein , Bernhard Stegmueller , Wolfgang Thulke , Gerhard Winzer , Ulrich Wolff
IPC分类号： H01S5/00 , H01S5/026 , H01S5/10 , H01S5/12 , H01S5/223 , H01S5/323 , H01S3/19 , B44C1/22 , H01L21/00 , H01L21/306
CPC分类号： H01S5/12 , H01S5/026 , H01S5/1032 , H01S5/2231 , H01S5/32391
摘要： A method for integrating a DFB laser and a passive strip waveguide on a substrate. A layer stack is produced in a first epitaxy step, the layer stack having a laser-active layer and a surface-wide grating on the uppermost layer, and eroding the stack area-wise, but only down to a layer under the laser-active layer, not down to the substrate, by means of etching to create a step separating the laser region from the passive strip waveguide region. By employing an etching stop layer, the etching can ensue self-adjustingly, and the coupling between the laser-active layer and the passive strip waveguide region occurs not by end coupling, but by surface coupling. Only two epitaxy steps are required for the complete manufacture of the structure, and a strip required for the definition of the laser and of the waveguide can be produced in the same single method step.
摘要翻译：一种在基板上集成DFB激光器和无源带状波导的方法。在第一外延步骤中产生层堆叠，层堆叠在最上层具有激光有源层和表面宽光栅，并且在区域上仅侵蚀堆叠，但仅下降到激光活性层，而不是通过蚀刻来形成将激光区域与无源带状波导区域分离的步骤。通过使用蚀刻停止层，可以进行自适应的蚀刻，并且激光有源层和无源带状波导区域之间的耦合不是通过端部耦合而是通过表面耦合而发生的。完全制造结构仅需要两个外延步骤，并且可以在相同的单一方法步骤中制造激光和波导的定义所需的条。

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