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1. 发明授权

US06635116B1 Residual oxygen reduction system 有权
标题翻译：残余氧还原系统
公开(公告)号：US06635116B1
公开(公告)日：2003-10-21
申请号：US09650164
申请日：2000-08-29
申请人： Mark I. Mayeda , Steven E. Reder , Richard Gimmi , Matthew R. Trattles
发明人： Mark I. Mayeda , Steven E. Reder , Richard Gimmi , Matthew R. Trattles
IPC分类号： C23C1600
CPC分类号： C23C16/4408 , C23C16/4401 , H01L21/67017
摘要： An apparatus for reducing residual oxygen content from a processing chamber of an atmospheric reactor after the processing chamber of the atmospheric reactor has been exposed to an oxygen environment. The processing chamber of the atmospheric reactor has an inert gas purge, including an inert gas source, for reducing a residual oxygen level within the processing chamber of the atmospheric reactor at a rate of reduction. A venturi vacuum system is enabled by the inert gas source. The venturi vacuum system draws a vacuum on the processing chamber of the atmospheric reactor and supplements the inert gas purge, thereby accelerating the rate at which the residual oxygen level is reduced within the processing chamber of the atmospheric reactor. In this manner, the vacuum created by the venturi vacuum system increases the efficiency of the inert gas purge by reducing by some moderate degree the pressure within the processing chamber of the atmospheric reactor. This provides additional gas flow within the processing chamber to physically remove the residual oxygen from the processing chamber. However, the vacuum provided by the venturi vacuum system is not high enough to cause damage to the components of the atmospheric reactor, which are not designed to withstand the forces that are created by a relatively high vacuum.
摘要翻译：在大气反应堆的处理室之后已经暴露于氧气环境中的用于减少大气压反应器的处理室中的残留氧含量的装置。大气反应器的处理室具有惰性气体吹扫，包括惰性气体源，用于以降低的速率降低大气反应堆的处理室内的残余氧水平。文丘里真空系统由惰性气体源启用。文丘里真空系统在大气反应器的处理室中抽真空，并补充惰性气体吹扫，从而加速在大气反应器的处理室内残余氧含量降低的速率。以这种方式，由文氏管真空系统产生的真空度通过在大气反应器的处理室内的一定程度上的压力降低来提高惰性气体吹扫的效率。这在处理室内提供额外的气流，以物理地从处理室去除残留的氧气。然而，由文丘里真空系统提供的真空度不够高，不会对大气反应堆的组件造成损害，这些组件不是设计成能承受由较高真空产生的力。

2. 发明授权

US06927177B2 Chemical mechanical electropolishing system 失效
标题翻译：化学机械电抛光系统
公开(公告)号：US06927177B2
公开(公告)日：2005-08-09
申请号：US10693110
申请日：2003-10-24
申请人： Steven E. Reder , Michael J. Berman
发明人： Steven E. Reder , Michael J. Berman
IPC分类号： B24B37/04 , C25F3/02 , H01L21/31 , H01L21/469
CPC分类号： C25F3/02 , B24B37/042 , H01L21/32125 , Y10S438/907
摘要： A system for thinning a layer on a substrate without damaging a delicate underlying layer in the substrate. The system includes means for mechanically eroding the layer on the substrate, and means for electropolishing the layer on the substrate. In this manner, portions of the layer that cannot be removed by electropolishing can be removed by the mechanical erosion. However, electropolishing can preferentially be used on some portions of the layer so that unnecessary mechanical stresses can be avoided. Thus, the system imparts less mechanical stress to the substrate during the removal of the layer, and the delicate underlying layer receives less damage during the process, and preferably no damage whatsoever.
摘要翻译：一种用于在衬底上稀薄层而不损坏衬底中精细的下层的系统。该系统包括用于机械腐蚀衬底上的层的装置，以及用于电镀抛光衬底上的层的装置。以这种方式，通过电解抛光不能除去的层的部分可以通过机械侵蚀去除。然而，电解抛光可优先用于层的某些部分，从而可以避免不必要的机械应力。因此，在去除层期间，该系统对基板施加较少的机械应力，并且精细的下层在该过程期间受到较少的损伤，并且优选地不受任何损害。

3. 发明授权

US06649537B1 Intermittent pulsed oxidation process 有权
标题翻译：间歇脉冲氧化工艺
公开(公告)号：US06649537B1
公开(公告)日：2003-11-18
申请号：US10044215
申请日：2001-11-19
申请人： Steven E. Reder , Hemanshu D. Bhatt
发明人： Steven E. Reder , Hemanshu D. Bhatt
IPC分类号： H07L2131
CPC分类号： H01L21/0214 , H01L21/02238 , H01L21/02255 , H01L21/02332 , H01L21/02337 , H01L21/31662 , Y10S438/913
摘要： The present invention provides a method of forming a dielectric on a semiconductor substrate. A dielectric is grown at a substrate interface in a plurality of increments. Stress is relieved at the dielectric substrate interface between each increment. In another aspect, stress relief is performed by annealing the substrate. The annealing is performed by placing the substrate in an inert environment and by raising the temperature surrounding the substrate.
摘要翻译：本发明提供一种在半导体衬底上形成电介质的方法。电介质以多个增量在衬底界面处生长。在每个增量之间的电介质基板界面处，应力消除。另一方面，通过对衬底进行退火来进行应力释放。通过将衬底放置在惰性环境中并通过提高衬底周围的温度来进行退火。

4. 发明授权

US07332062B1 Electroplating tool for semiconductor manufacture having electric field control 有权
标题翻译：具有电场控制的半导体制造用电镀工具
公开(公告)号：US07332062B1
公开(公告)日：2008-02-19
申请号：US10452360
申请日：2003-06-02
申请人： Steven E. Reder , Michael J. Berman
发明人： Steven E. Reder , Michael J. Berman
IPC分类号： C25D17/00 , C25D17/06 , C25D7/12
CPC分类号： C25D17/06 , C25D17/001 , C25D17/005
摘要： An electroplating tool for providing a metal or metal film on a semiconductor wafer during processing thereof has a wafer chucking mechanism with a conductor or conductors associated therewith. The conductor(s) are electrically connected to a controller that applies a voltage or current applied thereto for altering the position of and/or varying the intensity of electromagnetic field lines originating from a source anode of the electroplating tool. The electromagnetic field lines originating from the source anode direct the deposition of metal from the electroplating solution to the semiconductor wafer. The conductor(s) of the wafer chucking mechanism improve and/or modulate the electromagnetic field lines of the electroplating process. This provides greater control of metal deposition during the electroplating process such that uniformity of the metal (e.g. copper) is provided across the semiconductor wafer.
摘要翻译：一种用于在其处理期间在半导体晶片上提供金属或金属膜的电镀工具具有带有与其相关联的导体或导体的晶片夹持机构。导体电连接到控制器，该控制器施加施加到其上的电压或电流，以改变源自电镀工具的源极的电磁场线的位置和/或改变电磁场线的强度。源自源极阳极的电磁场线将金属从电镀溶液沉积到半导体晶片。晶片夹持机构的导体改善和/或调制电镀工艺的电磁场线。这提供了在电镀工艺期间对金属沉积的更大控制，使得跨半导体晶片提供金属（例如铜）的均匀性。

5. 发明授权

US06982206B1 Mechanism for improving the structural integrity of low-k films 有权
标题翻译：改善低k膜结构完整性的机理
公开(公告)号：US06982206B1
公开(公告)日：2006-01-03
申请号：US10679004
申请日：2003-10-02
申请人： Michael J. Berman , Steven E. Reder , Hemanshu Bhatt
发明人： Michael J. Berman , Steven E. Reder , Hemanshu Bhatt
IPC分类号： H01L21/76
CPC分类号： H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a method of forming a low-k dielectric composite film is provided. A low-k interconnect dielectric layer is strengthened by forming whiskers in the low-k film. The whiskers are formed simultaneously with the low-k layer. In one embodiment, the low-k structure is removed by heating a volatile matrix film, leaving a whisker residue.
摘要翻译：根据一个实施例，提供了形成低k电介质复合膜的方法。通过在低k膜中形成晶须来增强低k互连电介质层。晶须与低k层同时形成。在一个实施方案中，通过加热挥发性基质膜除去低k结构，留下晶须残留物。

6. 发明授权

US06574525B1 In situ measurement 有权
标题翻译：原位测量
公开(公告)号：US06574525B1
公开(公告)日：2003-06-03
申请号：US10105483
申请日：2002-03-25
申请人： Steven E. Reder , Hemanshu D. Bhatt
发明人： Steven E. Reder , Hemanshu D. Bhatt
IPC分类号： G06F1900
CPC分类号： H01L21/67253
摘要： A reaction chamber of the type used to create a reaction at a surface of a substrate disposed within the reaction chamber. A transmitter produces a transmitted beam having first characteristics, where the transmitter is disposed outside of the reaction chamber. A view port is disposed in a boundary wall of the reaction chamber, where the view port is formed of a material that is transparent at least in part to the transmitted beam. The transmitter, the view port, and the substrate are aligned such that the transmitted beam is directable to and reflected at least in part from the surface of the substrate, thereby producing a reflected beam having second characteristics. A receiver is disposed outside of the reaction chamber, and the receiver receives the reflected beam from the surface of the substrate through the view port. The receiver also senses the second characteristics of the reflected beam and reports the second characteristics. A controller receives the second characteristics from the receiver and compares the second characteristics to the first characteristics to determine a difference between the first characteristics and the second characteristics. The difference relates to a progress of the reaction at the surface of the substrate. The controller also reports the progress of the reaction. A view port shield shields the view port from the reaction without substantially inhibiting the transmitted beam from reaching the surface of the substrate and the reflected beam from reaching the receiver. The transmitted beam is produced by the transmitter and the reflected beam is received and sensed by the receiver and the controller determines the progress of the reaction while the reaction is conducted.
摘要翻译：用于在设置在反应室内的基板的表面产生反应的类型的反应室。发射器产生具有第一特性的透射光束，其中发射器设置在反应室外。视图端口设置在反应室的边界壁中，其中视口由至少部分透射的透射束的材料形成。发射器，视图端口和基板被对准，使得透射光束可以被定向至少部分地从衬底的表面反射，从而产生具有第二特性的反射光束。接收器设置在反应室的外部，并且接收器通过视口从基板的表面接收反射光束。接收器还感测反射光束的第二特性并报告第二特性。控制器从接收器接收第二特性，并将第二特性与第一特性进行比较，以确定第一特性和第二特性之间的差异。该差异涉及在基材表面的反应进展。控制人还报告反应的进展。视口端口屏蔽将视口从反应屏蔽，基本上不阻止透射光束到达衬底的表面，并且反射光束到达接收器。发射光束由发射器产生，反射光束由接收器接收和感测，控制器在反应进行时确定反应进程。

7. 发明授权

US5146869A Tube and injector for preheating gases in a chemical vapor deposition reactor 失效
标题翻译：用于在化学气相沉积反应器中预热气体的管和注射器
公开(公告)号：US5146869A
公开(公告)日：1992-09-15
申请号：US535811
申请日：1990-06-11
申请人： Kenneth W. Bohannon , Kuppuswamy Srikrishna , Anthony F. Sholing , Steven E. Reder
发明人： Kenneth W. Bohannon , Kuppuswamy Srikrishna , Anthony F. Sholing , Steven E. Reder
IPC分类号： C23C16/44 , C23C16/455
CPC分类号： C23C16/45512 , C23C16/455 , Y10S156/912
摘要： A gas injector apparatus and process, having a gas injector tube ending at the top of a vertical reaction chamber, improves the thickness and resistivity uniformity of films deposited in CVD process reactors. The injection tube has a plurality of baffles to increase the residence time of reactant gases flowing toward the reaction chamber.
摘要翻译：具有终止于垂直反应室顶部的气体注入管的气体注入装置和方法改善了沉积在CVD工艺反应器中的薄膜的厚度和电阻率均匀性。注射管具有多个挡板，以增加朝向反应室流动的反应气体的停留时间。

8. 发明授权

US08404960B2 Method for heat dissipation on semiconductor device 有权
标题翻译：半导体器件散热方法
公开(公告)号：US08404960B2
公开(公告)日：2013-03-26
申请号：US10930590
申请日：2004-08-31
申请人： Zachary A. Prather , Steven E. Reder , Michael J. Berman
发明人： Zachary A. Prather , Steven E. Reder , Michael J. Berman
IPC分类号： H01L35/30 , H01L23/34
CPC分类号： H01L35/30 , H01L23/38 , H01L24/48 , H01L24/73 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/00014 , H01L2924/01019 , H01L2924/15153 , H01L2924/15165 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A device and method wherein a thermo electric generator device is disposed between stacks of a multiple level device, or is provided on or under a die of a package and is conductively connected to the package. The thermo electric generator device is configured to generate a voltage by converting heat into electric power. The voltage which is generated by the thermo electric generator can be recycled back into the die itself, or to a higher-level unit in the system, even to a cooling fan.
摘要翻译：一种装置和方法，其中热电发生器装置设置在多级装置的堆叠之间，或者设置在包装的管芯上或下方，并且导电地连接到包装。热电发生器装置被配置为通过将热量转换成电力来产生电压。由热电发生器产生的电压可以再循环回模具本身，或再循环回系统中的较高级别的单元，甚至可以再循环回冷却风扇。

9. 发明授权

US07314527B1 Reactor system 有权
标题翻译：反应器系统
公开(公告)号：US07314527B1
公开(公告)日：2008-01-01
申请号：US10012821
申请日：2001-12-10
申请人： Steven E. Reder , Preston E. Pillow
发明人： Steven E. Reder , Preston E. Pillow
IPC分类号： C23C16/40 , C23C16/448 , C23C16/453 , C23F1/00 , H01L21/306
CPC分类号： F23D14/22 , F23C2900/9901 , F23D14/32 , F23D91/02
摘要： A gas delivery system for delivering a gas to a reactor. The reactor has a reactor chamber, a gas inlet port, and a gas exhaust port. The gas delivery system included a torch chamber having an outer wall extending along a first axis. A torch injector extends into the torch chamber at a first end of the torch chamber. The torch injector includes at least one gas intake port for receiving at least one gas and a gas injector section for expelling the at least one gas into the torch chamber. A gas outlet section is disposed at a second end of the torch chamber. The gas outlet section includes a first tubing member disposed along a second axis and a gas outlet port connected to the first tubing member. The gas outlet port of the gas outlet section engages the gas inlet port of the reactor. The torch chamber, the torch injector, and the gas outlet section of the gas delivery system are formed into a unitized structure with no resealable connections between them.
摘要翻译：用于将气体输送到反应器的气体输送系统。反应器具有反应室，气体入口和排气口。气体输送系统包括具有沿着第一轴线延伸的外壁的割炬室。焊炬喷射器在割炬室的第一端延伸到割炬室内。火炬喷射器包括用于接收至少一个气体的至少一个气体进入口和用于将至少一个气体排出到炬室中的气体喷射器部分。气体出口部分设置在割炬室的第二端。气体出口部分包括沿着第二轴线设置的第一管道部件和连接到第一管道部件的气体出口。气体出口部分的气体出口接合反应器的气体入口。气体输送系统的割炬室，火炬喷射器和气体出口部分形成为一体的结构，它们之间不具有可再密封的连接。

10. 发明授权

US06971944B2 Method and control system for improving CMP process by detecting and reacting to harmonic oscillation 失效
标题翻译：通过检测和谐波振荡反应来改善CMP工艺的方法和控制系统
公开(公告)号：US06971944B2
公开(公告)日：2005-12-06
申请号：US10779966
申请日：2004-02-17
申请人： Michael J. Berman , Steven E. Reder , Bruce Whitefield
发明人： Michael J. Berman , Steven E. Reder , Bruce Whitefield
IPC分类号： B24B37/04 , B24B49/10 , B24B1/00
CPC分类号： B24B37/005 , B24B49/10
摘要： A method and control system for detecting harmonic oscillation in a chemical mechanical polishing process and reacting thereto, such as by taking steps to at least one of: 1) reduce or eliminate the harmonic oscillation; and 2) counter the noise which is associated with the harmonic oscillation. By reducing or eliminating harmonic oscillation, films with reduced structure strengths including low k dielectric films can be used. By countering the noise, the quality of the work environment is improved.
摘要翻译：一种用于检测化学机械抛光工艺中的谐波振荡并与其反应的方法和控制系统，例如通过采取以下步骤中的至少一个步骤：1）减少或消除谐波振荡; 和2）对抗与谐波振荡相关的噪声。通过减少或消除谐波振荡，可以使用包括低k电介质膜的具有降低的结构强度的膜。通过对付噪声，提高了工作环境的质量。

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