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1. 发明授权

US06635116B1 Residual oxygen reduction system 有权
标题翻译：残余氧还原系统
公开(公告)号：US06635116B1
公开(公告)日：2003-10-21
申请号：US09650164
申请日：2000-08-29
申请人： Mark I. Mayeda , Steven E. Reder , Richard Gimmi , Matthew R. Trattles
发明人： Mark I. Mayeda , Steven E. Reder , Richard Gimmi , Matthew R. Trattles
IPC分类号： C23C1600
CPC分类号： C23C16/4408 , C23C16/4401 , H01L21/67017
摘要： An apparatus for reducing residual oxygen content from a processing chamber of an atmospheric reactor after the processing chamber of the atmospheric reactor has been exposed to an oxygen environment. The processing chamber of the atmospheric reactor has an inert gas purge, including an inert gas source, for reducing a residual oxygen level within the processing chamber of the atmospheric reactor at a rate of reduction. A venturi vacuum system is enabled by the inert gas source. The venturi vacuum system draws a vacuum on the processing chamber of the atmospheric reactor and supplements the inert gas purge, thereby accelerating the rate at which the residual oxygen level is reduced within the processing chamber of the atmospheric reactor. In this manner, the vacuum created by the venturi vacuum system increases the efficiency of the inert gas purge by reducing by some moderate degree the pressure within the processing chamber of the atmospheric reactor. This provides additional gas flow within the processing chamber to physically remove the residual oxygen from the processing chamber. However, the vacuum provided by the venturi vacuum system is not high enough to cause damage to the components of the atmospheric reactor, which are not designed to withstand the forces that are created by a relatively high vacuum.
摘要翻译：在大气反应堆的处理室之后已经暴露于氧气环境中的用于减少大气压反应器的处理室中的残留氧含量的装置。大气反应器的处理室具有惰性气体吹扫，包括惰性气体源，用于以降低的速率降低大气反应堆的处理室内的残余氧水平。文丘里真空系统由惰性气体源启用。文丘里真空系统在大气反应器的处理室中抽真空，并补充惰性气体吹扫，从而加速在大气反应器的处理室内残余氧含量降低的速率。以这种方式，由文氏管真空系统产生的真空度通过在大气反应器的处理室内的一定程度上的压力降低来提高惰性气体吹扫的效率。这在处理室内提供额外的气流，以物理地从处理室去除残留的氧气。然而，由文丘里真空系统提供的真空度不够高，不会对大气反应堆的组件造成损害，这些组件不是设计成能承受由较高真空产生的力。

2. 发明授权

US5614249A Leak detection system for a gas manifold of a chemical vapor deposition apparatus 失效
标题翻译：用于化学气相沉积装置的气体歧管的泄漏检测系统
公开(公告)号：US5614249A
公开(公告)日：1997-03-25
申请号：US520030
申请日：1995-08-28
申请人： Mark I. Mayeda
发明人： Mark I. Mayeda
IPC分类号： G01M3/20 , C23C16/44 , C23C16/455 , G01M3/22 , H01L21/205 , H01L21/31 , B05D3/00
CPC分类号： G01M3/223 , C23C16/4401
摘要： A chemical vapor deposition apparatus includes a gas manifold having a first gas flow port through which a gas flow path extends, and a first peripheral surface which extends about the first gas flow port. The chemical vapor deposition apparatus further includes a second gas flow port through which the gas flow path extends, and a second peripheral surface extending about the second gas flow port. A connection of the gas manifold is provided such that the first and second peripheral surfaces substantially mutually engage intended for providing a substantial seal of the gas flow path. A groove is provided in at least one of the first and second peripheral surfaces and extends so as to communicate with at least one of the first and second gas flow ports. The groove facilitates flow of a test gas therein from outside the chemical vapor deposition apparatus towards the respective gas flow port.A method for checking seals of a chemical vapor deposition apparatus gas manifold includes providing groove in a least one of a pair of mutually engaging peripheral surfaces which surround a gas flow port through which a gas flow path of the gas manifold extends. The groove extends so as to communicate with the gas flow port for facilitating flow of a test gas in the groove. A vacuum is drawn in the gas mixing manifold while a test gas is provided in an area proximate the gas manifold seal, and the entrance of the test gas inside the gas flow path through the seal is detected in order to determine the reliability of the seal.
摘要翻译：一种化学气相沉积装置包括：气体歧管，具有气体流路延伸穿过的第一气体流通端口和围绕第一气体流动端口延伸的第一周边表面。化学气相沉积装置还包括气体流路延伸通过的第二气体流动端口和围绕第二气体流动端口延伸的第二周边表面。提供气体歧管的连接，使得第一和第二外周表面基本上相互接合，用于提供气体流路的基本密封。在所述第一和第二外周表面中的至少一个中设置有凹槽，并且延伸以与所述第一和第二气体流动端口中的至少一个连通。该槽有利于从化学气相沉积装置外部将测试气体从其外部流向相应的气体流动端口。用于检查化学气相沉积装置气体歧管的密封件的方法包括在一对相互接合的外围表面中的至少一个中提供槽，所述凹槽包围气体歧管的气体流动路径延伸的气体流动口。凹槽延伸以与气体流动端口连通，以便于测试气体在凹槽中的流动。在气体混合歧管中抽吸真空，同时在靠近气体歧管密封件的区域中提供测试气体，并且检测通过密封件的气体流动路径内的测试气体的入口，以确定密封件的可靠性。

3. 发明授权

US5635244A Method of forming a layer of material on a wafer 失效
标题翻译：在晶片上形成材料层的方法
公开(公告)号：US5635244A
公开(公告)日：1997-06-03
申请号：US520058
申请日：1995-08-28
申请人： Mark I. Mayeda , Wilbur G. Catabay , Joe W. Zhao
发明人： Mark I. Mayeda , Wilbur G. Catabay , Joe W. Zhao
IPC分类号： C23C14/50 , C23C16/44 , C23C16/458 , H01L21/203 , H01L21/205 , H01L21/285 , H01L21/31 , C23C16/06
CPC分类号： C23C16/4585
摘要： Disclosed is a wafer clamp which holds a wafer in place during chemical vapor deposition processes. The wafer clamp includes (1) a clamp body having an inner facing portion and an outer facing portion; and (2) an overhang member attached to and extending inwardly from the inner facing portion of the clamp body. The clamp is designed such that when it holds the wafer, the overhang member extends over the wafer's peripheral region and is separated from that peripheral region by at least a predefined distance. The peripheral region is a region on the wafer's upper face that resides near the perimeter of the upper face. The predefined distance is chosen such that during deposition, a layer of material does not contact both the wafer face and the overhang member. The predefined distance is at least about 100 times the thickness of the layer of material. When the disclosed wafer clamp is used to hold a wafer for reaction in a chemical vapor deposition reactor, a deposition layer is formed that contacts only the wafer and not the clamp as well.
摘要翻译：公开了一种在化学气相沉积工艺期间将晶片保持在适当位置的晶片夹。晶片夹具包括（1）具有内表面部分和外表面部分的夹具体; 和（2）从夹紧体的内表面部分附接并向内延伸的突出部件。夹具被设计成使得当其保持晶片时，突出部件延伸超过晶片的周边区域并且与该外围区域分开至少预定距离。周边区域是位于晶片上表面附近靠近上表面周边的区域。选择预定义的距离使得在沉积期间，材料层不接触晶片面和突出构件。预定距离是材料层厚度的至少约100倍。当所公开的晶片夹被用于在化学气相沉积反应器中保持用于反应的晶片时，形成仅与晶片而不是夹具接触的沉积层。

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