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1. 发明授权

US06927177B2 Chemical mechanical electropolishing system 失效
标题翻译：化学机械电抛光系统
公开(公告)号：US06927177B2
公开(公告)日：2005-08-09
申请号：US10693110
申请日：2003-10-24
申请人： Steven E. Reder , Michael J. Berman
发明人： Steven E. Reder , Michael J. Berman
IPC分类号： B24B37/04 , C25F3/02 , H01L21/31 , H01L21/469
CPC分类号： C25F3/02 , B24B37/042 , H01L21/32125 , Y10S438/907
摘要： A system for thinning a layer on a substrate without damaging a delicate underlying layer in the substrate. The system includes means for mechanically eroding the layer on the substrate, and means for electropolishing the layer on the substrate. In this manner, portions of the layer that cannot be removed by electropolishing can be removed by the mechanical erosion. However, electropolishing can preferentially be used on some portions of the layer so that unnecessary mechanical stresses can be avoided. Thus, the system imparts less mechanical stress to the substrate during the removal of the layer, and the delicate underlying layer receives less damage during the process, and preferably no damage whatsoever.
摘要翻译：一种用于在衬底上稀薄层而不损坏衬底中精细的下层的系统。该系统包括用于机械腐蚀衬底上的层的装置，以及用于电镀抛光衬底上的层的装置。以这种方式，通过电解抛光不能除去的层的部分可以通过机械侵蚀去除。然而，电解抛光可优先用于层的某些部分，从而可以避免不必要的机械应力。因此，在去除层期间，该系统对基板施加较少的机械应力，并且精细的下层在该过程期间受到较少的损伤，并且优选地不受任何损害。

2. 发明授权

US07332062B1 Electroplating tool for semiconductor manufacture having electric field control 有权
标题翻译：具有电场控制的半导体制造用电镀工具
公开(公告)号：US07332062B1
公开(公告)日：2008-02-19
申请号：US10452360
申请日：2003-06-02
申请人： Steven E. Reder , Michael J. Berman
发明人： Steven E. Reder , Michael J. Berman
IPC分类号： C25D17/00 , C25D17/06 , C25D7/12
CPC分类号： C25D17/06 , C25D17/001 , C25D17/005
摘要： An electroplating tool for providing a metal or metal film on a semiconductor wafer during processing thereof has a wafer chucking mechanism with a conductor or conductors associated therewith. The conductor(s) are electrically connected to a controller that applies a voltage or current applied thereto for altering the position of and/or varying the intensity of electromagnetic field lines originating from a source anode of the electroplating tool. The electromagnetic field lines originating from the source anode direct the deposition of metal from the electroplating solution to the semiconductor wafer. The conductor(s) of the wafer chucking mechanism improve and/or modulate the electromagnetic field lines of the electroplating process. This provides greater control of metal deposition during the electroplating process such that uniformity of the metal (e.g. copper) is provided across the semiconductor wafer.
摘要翻译：一种用于在其处理期间在半导体晶片上提供金属或金属膜的电镀工具具有带有与其相关联的导体或导体的晶片夹持机构。导体电连接到控制器，该控制器施加施加到其上的电压或电流，以改变源自电镀工具的源极的电磁场线的位置和/或改变电磁场线的强度。源自源极阳极的电磁场线将金属从电镀溶液沉积到半导体晶片。晶片夹持机构的导体改善和/或调制电镀工艺的电磁场线。这提供了在电镀工艺期间对金属沉积的更大控制，使得跨半导体晶片提供金属（例如铜）的均匀性。

3. 发明授权

US06982206B1 Mechanism for improving the structural integrity of low-k films 有权
标题翻译：改善低k膜结构完整性的机理
公开(公告)号：US06982206B1
公开(公告)日：2006-01-03
申请号：US10679004
申请日：2003-10-02
申请人： Michael J. Berman , Steven E. Reder , Hemanshu Bhatt
发明人： Michael J. Berman , Steven E. Reder , Hemanshu Bhatt
IPC分类号： H01L21/76
CPC分类号： H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a method of forming a low-k dielectric composite film is provided. A low-k interconnect dielectric layer is strengthened by forming whiskers in the low-k film. The whiskers are formed simultaneously with the low-k layer. In one embodiment, the low-k structure is removed by heating a volatile matrix film, leaving a whisker residue.
摘要翻译：根据一个实施例，提供了形成低k电介质复合膜的方法。通过在低k膜中形成晶须来增强低k互连电介质层。晶须与低k层同时形成。在一个实施方案中，通过加热挥发性基质膜除去低k结构，留下晶须残留物。

4. 发明授权

US08404960B2 Method for heat dissipation on semiconductor device 有权
标题翻译：半导体器件散热方法
公开(公告)号：US08404960B2
公开(公告)日：2013-03-26
申请号：US10930590
申请日：2004-08-31
申请人： Zachary A. Prather , Steven E. Reder , Michael J. Berman
发明人： Zachary A. Prather , Steven E. Reder , Michael J. Berman
IPC分类号： H01L35/30 , H01L23/34
CPC分类号： H01L35/30 , H01L23/38 , H01L24/48 , H01L24/73 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/00014 , H01L2924/01019 , H01L2924/15153 , H01L2924/15165 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A device and method wherein a thermo electric generator device is disposed between stacks of a multiple level device, or is provided on or under a die of a package and is conductively connected to the package. The thermo electric generator device is configured to generate a voltage by converting heat into electric power. The voltage which is generated by the thermo electric generator can be recycled back into the die itself, or to a higher-level unit in the system, even to a cooling fan.
摘要翻译：一种装置和方法，其中热电发生器装置设置在多级装置的堆叠之间，或者设置在包装的管芯上或下方，并且导电地连接到包装。热电发生器装置被配置为通过将热量转换成电力来产生电压。由热电发生器产生的电压可以再循环回模具本身，或再循环回系统中的较高级别的单元，甚至可以再循环回冷却风扇。

5. 发明授权

US06971944B2 Method and control system for improving CMP process by detecting and reacting to harmonic oscillation 失效
标题翻译：通过检测和谐波振荡反应来改善CMP工艺的方法和控制系统
公开(公告)号：US06971944B2
公开(公告)日：2005-12-06
申请号：US10779966
申请日：2004-02-17
申请人： Michael J. Berman , Steven E. Reder , Bruce Whitefield
发明人： Michael J. Berman , Steven E. Reder , Bruce Whitefield
IPC分类号： B24B37/04 , B24B49/10 , B24B1/00
CPC分类号： B24B37/005 , B24B49/10
摘要： A method and control system for detecting harmonic oscillation in a chemical mechanical polishing process and reacting thereto, such as by taking steps to at least one of: 1) reduce or eliminate the harmonic oscillation; and 2) counter the noise which is associated with the harmonic oscillation. By reducing or eliminating harmonic oscillation, films with reduced structure strengths including low k dielectric films can be used. By countering the noise, the quality of the work environment is improved.
摘要翻译：一种用于检测化学机械抛光工艺中的谐波振荡并与其反应的方法和控制系统，例如通过采取以下步骤中的至少一个步骤：1）减少或消除谐波振荡; 和2）对抗与谐波振荡相关的噪声。通过减少或消除谐波振荡，可以使用包括低k电介质膜的具有降低的结构强度的膜。通过对付噪声，提高了工作环境的质量。

6. 发明授权

US06739953B1 Mechanical stress free processing method 有权
标题翻译：机械无应力加工方法
公开(公告)号：US06739953B1
公开(公告)日：2004-05-25
申请号：US10410925
申请日：2003-04-09
申请人： Michael J. Berman , Steven E. Reder
发明人： Michael J. Berman , Steven E. Reder
IPC分类号： B24B100
CPC分类号： B24B37/046 , B24B37/042 , B24B49/16 , H01L21/32125 , Y10S451/908
摘要： According to one embodiment, a method of planarizing of a surface of a semiconductor substrate is provided. A copper layer is inlaid in a dielectric layer of the substrate. The semiconductor substrate is disposed opposite to a polishing pad and relative movement provided between the pad and the substrate. An electrolytic slurry containing abrasive particles is flowed over the substrate or the pad. A voltage is applied between the polishing pad and the substrate to perform electropolishing of the substrate. The rate of chemical mechanical polishing is controlled by the down force applied to a polishing head urging the substrate against the polishing pad.
摘要翻译：根据一个实施例，提供了半导体衬底的表面的平面化方法。在衬底的电介质层中镶嵌铜层。半导体衬底与抛光垫相对设置并且设置在衬垫和衬底之间的相对运动。含有磨粒的电解浆液流过衬底或衬垫。在抛光垫和基板之间施加电压以进行基板的电解抛光。化学机械抛光的速度通过施加到抛光头的向下的力来控制，抛光头将衬底推向抛光垫。

7. 发明授权

US07183787B2 Contact resistance device for improved process control 有权
标题翻译：接触电阻器件，用于改进过程控制
公开(公告)号：US07183787B2
公开(公告)日：2007-02-27
申请号：US10723701
申请日：2003-11-26
申请人： Michael J. Berman , Steven E. Reder
发明人： Michael J. Berman , Steven E. Reder
IPC分类号： G01R31/26
CPC分类号： C25D21/12 , H01L21/2885
摘要： A device for measuring resistances associated with electrical contacts of a contact ring used in a semiconductor wafer electroplating process. The device includes a substrate and a conductive pattern on the substrate. The conductive pattern is electrically contactable with the electrical contacts of the contact ring. Resistance measurement circuitry is connected to the conductive pattern. The resistance measurement circuitry is configured to send test signals to the conductive pattern, receive signals from the conductive pattern, and measure the resistances associated with the electrical contacts of the contact ring. A method of using such a device to measure resistances associated with electrical contacts of a contact ring used in a semiconductor wafer electroplating process is also provided.
摘要翻译：一种用于测量与半导体晶片电镀工艺中使用的接触环的电触点相关联的电阻的装置。该器件在衬底上包括衬底和导电图案。导电图案与接触环的电触点电接触。电阻测量电路连接到导电图案。电阻测量电路被配置为将测试信号发送到导电图案，从导电图案接收信号，并测量与接触环的电触点相关联的电阻。还提供了使用这种装置来测量与在半导体晶片电镀工艺中使用的接触环的电触点相关联的电阻的方法。

8. 发明授权

US07067048B2 Method to improve the control of electro-polishing by use of a plating electrode an electrolyte bath 失效
标题翻译：通过使用电镀电极来提高电抛光控制的方法
公开(公告)号：US07067048B2
公开(公告)日：2006-06-27
申请号：US10637385
申请日：2003-08-08
申请人： Michael J. Berman , Steven E. Reder
发明人： Michael J. Berman , Steven E. Reder
IPC分类号： H05K3/07
CPC分类号： C25F7/02
摘要： A method and apparatus which uses a plating electrode in an electrolyte bath. The plating electrode works to purify an electrolyte polishing solution during the electro-polishing process. Preferably, the plating electrode is employed in a closed loop feedback system. The plating electrode may be powered by a power supply which is controlled by a controller. A sensor may be connected to the controller and the sensor may be configured to sense a characteristic (for example, but not limited to: resistance, conductance or optical transmission, absorption of light, etc.) of the electrolyte bath, which tends to indicate the level of saturation. Preferably, the plating electrode is easily replaceable.
摘要翻译：在电解液槽中使用电镀电极的方法和装置。电镀电极用于在电抛光过程中净化电解抛光液。优选地，电镀电极用于闭环反馈系统中。电镀电极可以由控制器控制的电源供电。传感器可以连接到控制器，并且传感器可以被配置为感测电解液浴的特性（例如但不限于：电阻，电导或光传输，光吸收等），其倾向于指示饱和度水平。优选地，电镀电极易于更换。

9. 发明授权

US06837967B1 Method and apparatus for cleaning deposited films from the edge of a wafer 有权
标题翻译：从晶片边缘清除沉积膜的方法和装置
公开(公告)号：US06837967B1
公开(公告)日：2005-01-04
申请号：US10290437
申请日：2002-11-06
申请人： Michael J. Berman , Steven E. Reder , Rennie G. Barber
发明人： Michael J. Berman , Steven E. Reder , Rennie G. Barber
IPC分类号： H01J37/32 , H01L21/00 , H05H1/00
CPC分类号： H01L21/67069 , H01J37/3244 , H01J37/32623 , H01J37/32633 , H01L21/67028
摘要： A plasma edge cleaning apparatus is configured to remove film deposits from a wafer edge. A gas distribution manifold is annular shaped and positioned to provide plasma process gases near the edge of the wafer. A top insulator and a wafer support each include a magnetic coil to generate a magnetic field for shielding the selected portions of a wafer from the generated plasma. The top insulator is positioned above the wafer during edge processing so as to form a small gap between the top insulator and the wafer to prevent plasma from etching active die areas of the wafer.
摘要翻译：等离子体边缘清洁装置构造成从晶片边缘去除膜沉积物。气体分配歧管是环形的并且定位成在晶片的边缘附近提供等离子体处理气体。顶部绝缘体和晶片支架各自包括磁性线圈，以产生磁场，用于屏蔽所产生的等离子体的晶片的选定部分。顶部绝缘体在边缘处理期间位于晶片上方，以在顶部绝缘体和晶片之间形成小的间隙，以防止等离子体蚀刻晶片的有效裸片区域。

10. 发明授权

US06743701B1 Method for the formation of active area utilizing reverse trench isolation 有权
标题翻译：利用反向沟槽隔离形成有源区的方法
公开(公告)号：US06743701B1
公开(公告)日：2004-06-01
申请号：US10324698
申请日：2002-12-20
申请人： Michael J. Berman , Steven E. Reder , Derryl Allman
发明人： Michael J. Berman , Steven E. Reder , Derryl Allman
IPC分类号： H01L2120
CPC分类号： H01L29/66242 , H01L21/02381 , H01L21/02488 , H01L21/02532 , H01L21/02639 , H01L21/76237
摘要： A method for forming an active area in a substrate includes the steps of growing an isolation oxide on a silicon substrate, providing a photresist mask to define the active areas on the substrate, performing etching and stripping processes, removing the residual oxide from the active areas and selectively growing an epitaxial silicon layer.
摘要翻译：在衬底中形成有源区的方法包括以下步骤：在硅衬底上生长隔离氧化物，提供光阻掩模以限定衬底上的有源区，执行蚀刻和剥离工艺，从活性区去除残留的氧化物并选择性地生长外延硅层。

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