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1. 发明申请

US20050126484A1 Edge flow faceplate for improvement of CVD film properties 审中-公开
标题翻译：边缘流动面板，用于改善CVD膜性能
公开(公告)号：US20050126484A1
公开(公告)日：2005-06-16
申请号：US11013124
申请日：2004-12-15
申请人： Maosheng Zhao , Lun Tsuei , Juan Rocha-Alvarez , Tom Cho
发明人： Maosheng Zhao , Lun Tsuei , Juan Rocha-Alvarez , Tom Cho
IPC分类号： C23C16/00 , C23C16/44 , C23C16/455 , C23C16/509 , H01J37/32 , H01L21/00
CPC分类号： C23C16/45565 , C23C16/5096 , H01J37/3244
摘要： Embodiments in accordance with the present invention relate to apparatuses and methods distributing processing gases over a workpiece surface. In accordance with one embodiment of the present invention, process gases are flowed to a surface of a semiconductor wafer through a substantially circular gas distribution showerhead defining a plurality of holes. A first set of holes located at the center of the faceplate, are arranged in a non-concentric manner not exhibiting radial symmetry. This asymmetric arrangement achieves maximum density of holes and gases distributed therefrom. To compensate for nonuniform exposure of the wafer edges to gases flowed from the first hole set, the faceplate periphery defines a second set of holes arranged concentrically and exhibiting radial symmetry. Processing substrates with gases flowed through the first and second sets of holes results in formation of films exhibiting enhanced uniformity across center-to-edge regions.
摘要翻译：根据本发明的实施例涉及在工件表面上分配处理气体的装置和方法。根据本发明的一个实施例，工艺气体通过限定多个孔的基本圆形的气体分配喷头流向半导体晶片的表面。位于面板中心的第一组孔布置成不呈径向对称的非同心方式。这种不对称布置实现了从其分布的孔和气体的最大密度。为了补偿晶片边缘对从第一孔组流出的气体的不均匀曝光，面板周边限定了同心布置且呈径向对称的第二组孔。处理具有流经第一和第二组孔的气体的衬底导致形成在中心到边缘区域上具有增强的均匀性的膜。

2. 发明授权

US06946033B2 Heated gas distribution plate for a processing chamber 失效
标题翻译：用于处理室的加热气体分配板
公开(公告)号：US06946033B2
公开(公告)日：2005-09-20
申请号：US10245443
申请日：2002-09-16
申请人： Lun Tsuei , Soovo Sen , Ju-Hyung Lee , Juan Carlos Rocha-Alvarez , Inna Shmurun , Maosheng Zhao , Troy Kim , Shankar Venkataraman
发明人： Lun Tsuei , Soovo Sen , Ju-Hyung Lee , Juan Carlos Rocha-Alvarez , Inna Shmurun , Maosheng Zhao , Troy Kim , Shankar Venkataraman
IPC分类号： C23C16/44 , C23C16/455 , C23C16/509 , H01L21/00 , C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： C23C16/4557 , C23C16/45565 , C23C16/5096 , H01L21/67017
摘要： An apparatus for distributing gas in a processing system. In one embodiment, the system includes a gas distribution assembly having a gas distribution plate. The gas distribution plate defines a plurality of holes through which gases are transmitted. The assembly further includes a gas box coupled to the gas distribution plate, in which the gas box is configured to supply the gases into the plurality of holes. The assembly further includes a means for reducing heat transfer from the gas box to the gas distribution plate.
摘要翻译：一种用于在处理系统中分配气体的装置。在一个实施例中，该系统包括具有气体分配板的气体分配组件。气体分配板限定了多个孔，气体通过该孔被传输。组件还包括联接到气体分配板的气体箱，气箱配置成将气体供应到多个孔中。组件还包括用于减少从气箱到气体分配板的热传递的装置。

3. 发明申请

US20100151127A1 APPARATUS AND METHOD FOR PREVENTING PROCESS SYSTEM CONTAMINATION 审中-公开
标题翻译：防止过程系统污染的装置和方法
公开(公告)号：US20100151127A1
公开(公告)日：2010-06-17
申请号：US12628034
申请日：2009-11-30
申请人： Tom K. Cho , Lun Tsuei , Kuan-Yuan Peng , Kyle S. Reinke , Brian Sy-Yuan Shieh
发明人： Tom K. Cho , Lun Tsuei , Kuan-Yuan Peng , Kyle S. Reinke , Brian Sy-Yuan Shieh
IPC分类号： C23C16/52 , C23C16/00
CPC分类号： C23C16/4401 , H01L21/67259 , H01L21/67288 , H01L21/68742
摘要： Embodiments of the present invention generally provide apparatus and methods for preventing contamination within a processing system due to substrate breakage. In one embodiment, an acoustic detection mechanism is disposed on or within a process chamber to monitor conditions within the process chamber. In one embodiment, the acoustic detection mechanism detects conditions indicative of substrate breakage within the process chamber. In one embodiment, the acoustic detection mechanism detects conditions that are known to lead to substrate breakage within the process chamber. In one embodiment, the acoustic detection mechanism is combined with an optical detection mechanism. By early detection of substrate breakage or conditions known to lead to substrate breakage, the process chamber may be taken off line and repaired prior to contamination of the entire process system.
摘要翻译：本发明的实施方案通常提供用于防止由于基底破裂而导致处理系统内的污染的装置和方法。在一个实施例中，声学检测机构设置在处理室内或内部，以监测处理室内的状况。在一个实施例中，声学检测机构检测指示处理室内的衬底断裂的条件。在一个实施例中，声学检测机构检测已知导致处理室内的基板破裂的状况。在一个实施例中，声学检测机构与光学检测机构组合。通过早期检测到底物断裂或已知导致基底破裂的条件，处理室可以在整个过程系统被污染之前脱机并修复。

4. 发明申请

US20060162661A1 Mixing energized and non-energized gases for silicon nitride deposition 审中-公开
标题翻译：混合通电和无能气体用于氮化硅沉积
公开(公告)号：US20060162661A1
公开(公告)日：2006-07-27
申请号：US11040712
申请日：2005-01-22
申请人： Kee Jung , Dale Du Bois , Lun Tsuei , Lihua Huang , Martin Seamons , Soovo Sen , Reza Arghavani , Michael Kwan
发明人： Kee Jung , Dale Du Bois , Lun Tsuei , Lihua Huang , Martin Seamons , Soovo Sen , Reza Arghavani , Michael Kwan
IPC分类号： H05H1/24 , C23C16/00 , H01L21/306 , C23F1/00 , B08B6/00
CPC分类号： C23C16/45574 , C23C16/345 , C23C16/452 , C23C16/45565 , C23C16/50 , H01J37/3244 , H01L21/0217 , H01L21/3185
摘要： A dual channel gas distributor can simultaneously distribute plasma species of an first process gas and a non-plasma second process gas into a process zone of a substrate processing chamber. The gas distributor has a localized plasma box with a first inlet to receive a first process gas, and opposing top and bottom plates that are capable of being electrically biased relative to one another to define a localized plasma zone in which a plasma of the first process gas can be formed. The top plate has a plurality of spaced apart gas spreading holes to spread the first process gas across the localized plasma zone, and the bottom plate has a plurality of first outlets to distribute plasma species of the plasma of the first process gas into the process zone. A plasma isolated gas feed has a second inlet to receive the second process gas and a plurality of second outlets to pass the second process gas into the process zone. A plasma isolator is between the second inlet and second outlets to prevent formation of a plasma of the second process gas in the plasma isolated gas feed.
摘要翻译：双通道气体分配器可以将第一工艺气体和非等离子体第二工艺气体的等离子体种类同时分配到衬底处理室的工艺区域中。气体分配器具有局部等离子体盒，其具有第一入口以接收第一工艺气体，以及相对的顶板和底板，其能够相对于彼此电偏置以限定局部等离子体区，其中第一工艺的等离子体可以形成气体。顶板具有多个间隔开的气体扩散孔，以将第一处理气体扩散通过局部等离子体区域，并且底板具有多个第一出口，用于将第一处理气体的等离子体的等离子体物质分配到处理区。等离子体隔离气体进料具有用于接收第二处理气体的第二入口和多个第二出口以将第二处理气体通入处理区。等离子体隔离器位于第二入口和第二出口之间，以防止在等离子体隔离气体进料中形成第二工艺气体的等离子体。

5. 发明授权

US08333842B2 Apparatus for etching semiconductor wafers 有权
标题翻译：用于蚀刻半导体晶片的设备
公开(公告)号：US08333842B2
公开(公告)日：2012-12-18
申请号：US12121599
申请日：2008-05-15
申请人： Dmitry Lubomirsky , Tien Fak Tan , Lun Tsuei
发明人： Dmitry Lubomirsky , Tien Fak Tan , Lun Tsuei
IPC分类号： H01L21/3065
CPC分类号： H01L21/67126 , H01L21/6838 , Y10T279/23
摘要： A wafer pedestal of a semiconductor apparatus is provided. The wafer pedestal is capable of supporting a substrate. The wafer pedestal includes a pedestal having at least one purge opening configured to flow a purge gas and at least one chucking opening configured to chuck the substrate over the pedestal. The pedestal includes a sealing band disposed between the at least one purge opening and the at least one chucking opening. The sealing band is configured to support the substrate.
摘要翻译：提供半导体装置的晶片基座。晶片基座能够支撑基板。晶片基座包括具有至少一个净化开口的基座，该至少一个净化开口构造成流过净化气体;以及至少一个夹紧开口，其构造成将衬底夹在基座上。基座包括设置在至少一个吹扫开口和至少一个夹紧开口之间的密封带。密封带构造成支撑基底。

6. 发明申请

US20090283217A1 APPARATUS FOR ETCHING SEMICONDUCTOR WAFERS 有权
标题翻译：用于蚀刻半导体波长的装置
公开(公告)号：US20090283217A1
公开(公告)日：2009-11-19
申请号：US12121599
申请日：2008-05-15
申请人： DMITRY LUBOMIRSKY , Tien Fak Tan , Lun Tsuei
发明人： DMITRY LUBOMIRSKY , Tien Fak Tan , Lun Tsuei
IPC分类号： H01L21/3065
CPC分类号： H01L21/67126 , H01L21/6838 , Y10T279/23
摘要： A wafer pedestal of a semiconductor apparatus is provided. The wafer pedestal is capable of supporting a substrate. The wafer pedestal includes a pedestal having at least one purge opening configured to flow a purge gas and at least one chucking opening configured to chuck the substrate over the pedestal. The pedestal includes a sealing band disposed between the at least one purge opening and the at least one chucking opening. The sealing band is configured to support the substrate.
摘要翻译：提供半导体装置的晶片基座。晶片基座能够支撑基板。晶片基座包括具有至少一个净化开口的基座，该至少一个净化开口构造成流过净化气体;以及至少一个夹紧开口，其构造成将基板夹在基座上。基座包括设置在至少一个吹扫开口和至少一个夹紧开口之间的密封带。密封带构造成支撑基底。

7. 发明授权

US09714465B2 Gas distribution blocker apparatus 有权
公开(公告)号：US09714465B2
公开(公告)日：2017-07-25
申请号：US12627578
申请日：2009-11-30
申请人： Lun Tsuei , Alan Tso , Tom K. Cho , Brian Sy-Yuan Shieh
发明人： Lun Tsuei , Alan Tso , Tom K. Cho , Brian Sy-Yuan Shieh
IPC分类号： C23C16/455 , H01L31/076 , H01L31/18
CPC分类号： C23C16/45565 , C23C16/45559 , H01L31/076 , H01L31/1824 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： Embodiments of the present invention generally provide apparatus and methods for altering the flow and pressure differential of process gases supplied across a showerhead of a processing chamber to provide improved deposition uniformity across the surface of a substrate disposed therein. In one embodiment, a blocker plate is disposed between a backing plate and a showerhead. In one embodiment, the distance between the blocker plate and the showerhead is adjustable. In another embodiment, the blocker plate has a non-planar surface contour. In another embodiment, a regional blocker plate is disposed between a backing plate and a showerhead. In another embodiment, a central blocker plate and a peripheral blocker plate are disposed between a backing plate and a showerhead.

8. 发明申请

US20120009803A1 Mixing Energized and Non-Energized Gases for Silicon Nitride Deposition 审中-公开
标题翻译：用于氮化硅沉积的混合通电和非能量气体
公开(公告)号：US20120009803A1
公开(公告)日：2012-01-12
申请号：US13212153
申请日：2011-08-17
申请人： Kee Bum Jung , Dale R. Du Bois , Lun Tsuei , Lihua Li Huang , Martin Jay Seamons , Soovo Sen , Reza Arghavani , Michael Chiu Kwan
发明人： Kee Bum Jung , Dale R. Du Bois , Lun Tsuei , Lihua Li Huang , Martin Jay Seamons , Soovo Sen , Reza Arghavani , Michael Chiu Kwan
IPC分类号： H01L21/318
CPC分类号： C23C16/45574 , C23C16/345 , C23C16/452 , C23C16/45565 , C23C16/50 , H01J37/3244 , H01L21/0217 , H01L21/3185
摘要： A dual channel gas distributor can simultaneously distribute plasma species of an first process gas and a non-plasma second process gas into a process zone of a substrate processing chamber. The gas distributor has a localized plasma box with a first inlet to receive a first process gas, and opposing top and bottom plates that are capable of being electrically biased relative to one another to define a localized plasma zone in which a plasma of the first process gas can be formed. The top plate has a plurality of spaced apart gas spreading holes to spread the first process gas across the localized plasma zone, and the bottom plate has a plurality of first outlets to distribute plasma species of the plasma of the first process gas into the process zone. A plasma isolated gas feed has a second inlet to receive the second process gas and a plurality of second outlets to pass the second process gas into the process zone. A plasma isolator is between the second inlet and second outlets to prevent formation of a plasma of the second process gas in the plasma isolated gas feed.
摘要翻译：双通道气体分配器可以将第一工艺气体和非等离子体第二工艺气体的等离子体种类同时分配到衬底处理室的工艺区域中。气体分配器具有局部等离子体箱，其具有第一入口以接收第一处理气体，以及相对的顶板和底板，其能够相对于彼此电偏置以限定局部等离子体区，其中第一工艺的等离子体可以形成气体。顶板具有多个间隔开的气体扩散孔，以将第一处理气体扩散通过局部等离子体区域，并且底板具有多个第一出口，用于将第一处理气体的等离子体的等离子体物质分配到处理区。等离子体隔离气体进料具有用于接收第二处理气体的第二入口和多个第二出口以将第二处理气体通入处理区。等离子体隔离器位于第二入口和第二出口之间，以防止在等离子体隔离气体进料中形成第二工艺气体的等离子体。

9. 发明申请

US20100112212A1 ADJUSTABLE GAS DISTRIBUTION APPARATUS 审中-公开
标题翻译：可调节气体分配装置
公开(公告)号：US20100112212A1
公开(公告)日：2010-05-06
申请号：US12604591
申请日：2009-10-23
申请人： Lin Zhang , Lun Tsuei , Alan Tso , Tom K. Cho , Brian Sy-Yuan Shieh
发明人： Lin Zhang , Lun Tsuei , Alan Tso , Tom K. Cho , Brian Sy-Yuan Shieh
IPC分类号： C23C16/455 , C23C16/54
CPC分类号： H01J37/32935 , C23C16/45565 , C23C16/45589 , H01J37/3244
摘要： Embodiments of the present invention generally provide apparatus and methods for altering the contour of a gas distribution plate within a process chamber without breaking vacuum conditions within the chamber. In one embodiment, a central support device adjusted to vary the height of a central region of a gas distribution plate with respect to the periphery of the gas distribution plate. In another embodiment, a plurality of central support devices is adjusted to vary the height of a central region of a gas distribution plate with respect to the periphery of the plate. In yet another embodiment, a plurality of central support devices and a plurality of mid-range support devices are adjusted to vary the height of certain regions of the gas distribution plate with respect to other regions of the gas distribution plate. In one embodiment, the contour of the gas distribution plate is altered based on changes detected within the process chamber.
摘要翻译：本发明的实施例通常提供用于改变处理室内的气体分配板的轮廓而不破坏室内的真空条件的装置和方法。在一个实施例中，中央支撑装置被调节以改变气体分配板的中心区域相对于气体分配板的周边的高度。在另一个实施例中，调节多个中心支撑装置以相对于板的周边改变气体分配板的中心区域的高度。在另一个实施例中，调节多个中央支撑装置和多个中距离支撑装置以改变气体分配板的某些区域相对于气体分配板的其它区域的高度。在一个实施例中，基于在处理室内检测到的变化来改变气体分配板的轮廓。

10. 发明申请

US20100071210A1 METHODS FOR FABRICATING FACEPLATE OF SEMICONDUCTOR APPARATUS 审中-公开
标题翻译：用于制备半导体装置的方法
公开(公告)号：US20100071210A1
公开(公告)日：2010-03-25
申请号：US12236768
申请日：2008-09-24
申请人： TIEN FAK TAN , Lun Tsuei , Shaofeng Chen , Felix Rabinovich , Dmitry Lubomirsky , Kimberly Hinckley
发明人： TIEN FAK TAN , Lun Tsuei , Shaofeng Chen , Felix Rabinovich , Dmitry Lubomirsky , Kimberly Hinckley
IPC分类号： B05B1/00 , B05D1/02 , B05B1/14 , B21D53/00
CPC分类号： C23C16/45565 , H01J37/3244 , Y10T29/49401
摘要： A method for manufacturing a faceplate of a semiconductor apparatus is provided. The method includes selecting a size of a tool in response to a predetermined specification of a predetermined gas parameter. The tool is used to form the holes within the faceplate. A first gas parameter of the holes of the faceplate is measured by an apparatus to determine if the measured first gas parameter of the holes of the faceplate is within the predetermined specification.
摘要翻译：提供一种制造半导体装置的面板的方法。该方法包括响应于预定气体参数的预定规格来选择工具的尺寸。该工具用于在面板内形成孔。面板的孔的第一气体参数由装置测量以确定面板的孔的测量的第一气体参数是否在预定规格内。

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