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1. 发明申请

US20060093972A1 Active hardmask for lithographic patterning 失效
公开(公告)号：US20060093972A1
公开(公告)日：2006-05-04
申请号：US11293594
申请日：2005-12-02
申请人： Michael Goldstein , Manish Chandhok , Eric Panning , Robert Bristol , Bryan Rice
发明人： Michael Goldstein , Manish Chandhok , Eric Panning , Robert Bristol , Bryan Rice
IPC分类号： G03F7/00
CPC分类号： G03F7/091 , G03F7/11
摘要： In an implementation, energy reaching the lower surface of a photoresist may be redirected back into the photoresist material. This may be done by, for example, reflecting and/or fluorescing the energy from a hardmask provided on the wafer surface back into the photoresist.

2. 发明申请

US20060017024A1 Extreme ultraviolet illumination source 失效
公开(公告)号：US20060017024A1
公开(公告)日：2006-01-26
申请号：US10882784
申请日：2004-06-30
申请人： Manish Chandhok , Eric Panning , Bryan Rice
发明人： Manish Chandhok , Eric Panning , Bryan Rice
IPC分类号： G01J3/10
CPC分类号： G03F7/70916 , B82Y10/00 , G03F7/70033
摘要： According to a first embodiment of the invention, a dual cathode electrode for generating EUV light is disclosed. The dual cathode electrode may include a first outer cathode, a second inner cathode, and an anode disposed between the inner and outer cathodes. The dual cathode electrode also includes a plasma disposed in between the cathodes that emits EUV photons when it is excited by an arc between the anode and the cathodes. According to a second embodiment of the invention, several Dense Plasma Focus (DPF) electrodes are placed along a circle. The DPF electrodes, when activated, will emit electron photons from the circle in which they are placed thereby avoiding obscuration used to protect UV mirrors against debris.

3. 发明申请

US20060002113A1 Adjustable illumination source 有权
公开(公告)号：US20060002113A1
公开(公告)日：2006-01-05
申请号：US10883297
申请日：2004-06-30
申请人： Manish Chandhok , Eric Panning , Bryan Rice
发明人： Manish Chandhok , Eric Panning , Bryan Rice
IPC分类号： F21S6/00
CPC分类号： B82Y10/00 , G03F7/70033 , G03F7/70175 , G03F7/70583
摘要： According to an embodiment of the invention, an adjustable EUV light source may be used for photolithography. The EUV light source, such as an electrode, is mounted in an adjustable housing. The housing can be adjusted to change the distance between the light source and focusing mirrors, which in turn changes the partial coherence value of the system. The partial coherence value can be changed to print different types of semiconductor features.

4. 发明申请

US20060289810A1 Adjustment of distance between source plasma and mirrors to change partial coherence 失效
标题翻译：调整源等离子体和反射镜之间的距离以改变部分相干性
公开(公告)号：US20060289810A1
公开(公告)日：2006-12-28
申请号：US11433412
申请日：2006-05-12
申请人： Manish Chandhok , Eric Panning , Bryan Rice
发明人： Manish Chandhok , Eric Panning , Bryan Rice
IPC分类号： G01J3/10
CPC分类号： B82Y10/00 , G03F7/70033 , G03F7/70175 , G03F7/70583
摘要： According to an embodiment of the invention, an adjustable EUV light source may be used for photolithography. The EUV light source, such as an electrode, is mounted in an adjustable housing. The housing can be adjusted to change the distance between the light source and focusing mirrors, which in turn changes the partial coherence value of the system. The partial coherence value can be changed to print different types of semiconductor features.
摘要翻译：根据本发明的实施例，可调节的EUV光源可用于光刻。 EUV光源，例如电极，安装在可调整的外壳中。可以调整外壳以改变光源和聚焦镜之间的距离，这又改变了系统的部分相干值。可以改变部分相干值以打印不同类型的半导体特征。

5. 发明申请

US20060000985A1 Optics for extreme ultraviolet lithography 失效
标题翻译：极光紫外光刻光学
公开(公告)号：US20060000985A1
公开(公告)日：2006-01-05
申请号：US10883048
申请日：2004-06-30
申请人： Manish Chandhok , Bryan Rice , Robert Bristol
发明人： Manish Chandhok , Bryan Rice , Robert Bristol
IPC分类号： G03F7/20
CPC分类号： G03F7/70175 , G03F7/70033 , G21K1/06
摘要： According to an embodiment of the invention, extreme ultraviolet (EUV) photolithography is performed using lobster eye transmission optics. A light source, such as a source plasma, is located at the center of a circle. Several mirror segments are arranged on an arc of the circle. The mirror segments may be arranged so that the light generated by the light source is collimated after being reflected. The light source may be a source plasma capable of generating EUV photons.
摘要翻译：根据本发明的实施例，使用龙虾眼传输光学器件执行极紫外（EUV）光刻。诸如源等离子体的光源位于圆的中心。圆弧上设有几个镜片段。镜片段可以被布置成使得由光源产生的光在被反射之后被准直。光源可以是能够产生EUV光子的源等离子体。

6. 发明申请

US20050042153A1 Extreme ultraviolet pellicle using a thin film and supportive mesh 有权
标题翻译：极紫外线防护薄膜使用薄膜和支撑网
公开(公告)号：US20050042153A1
公开(公告)日：2005-02-24
申请号：US10645877
申请日：2003-08-20
申请人： Robert Bristol , Bryan Rice
发明人： Robert Bristol , Bryan Rice
IPC分类号： B32B3/00 , B32B5/18 , B32B9/04 , B32B27/06 , G03F1/14
CPC分类号： G03F1/62 , B32B5/18 , B32B27/06 , B82Y10/00 , B82Y40/00 , C08J5/04 , G03F1/24 , Y10T428/24917
摘要： An extreme ultraviolet (EUV) pellicle including a thin film or membrane and a supportive wire mesh. The pellicle allows EUV radiation to pass through the pellicle to a reticle but prevents particles from passing through the pellicle. A buffer gas supports the film against the wire mesh. The film or membrane may be embedded with support fibers or beams.
摘要翻译：包括薄膜或膜的极紫外（EUV）防护薄膜和支撑丝网。防护薄膜可使EUV辐射通过防护薄膜到掩模版，但防止颗粒通过防护薄膜。缓冲气体将薄膜支撑在金属丝网上。膜或膜可以嵌入支撑纤维或梁。

7. 发明申请

US20050031502A1 Erosion resistance of EUV source electrodes 有权
标题翻译： EUV源电极的耐腐蚀性
公开(公告)号：US20050031502A1
公开(公告)日：2005-02-10
申请号：US10638261
申请日：2003-08-07
申请人： Robert Bristol , Arun Ramamoorthy , Bryan Rice
发明人： Robert Bristol , Arun Ramamoorthy , Bryan Rice
IPC分类号： B01J19/08 , H05G2/00
CPC分类号： H05G2/003
摘要： Erosion of material in an electrode in a plasma-produced extreme ultraviolet (EUV) light source may be reduced by treating the surface of the electrode. Grooves may be provided in the electrode surface to increase re-deposition of electrode material in the grooves. The electrode surface may be coated with a porous material to reduce erosion due to brittle destruction. The electrode surface may be coated with a pseudo-alloy to reduce erosion from surface waves caused by the plasma in molten material on the surface of the electrode.
摘要翻译：可以通过处理电极的表面来减少等离子体产生的极紫外（EUV）光源中的电极中的材料的侵蚀。沟槽可以设置在电极表面中以增加沟槽中的电极材料的再沉积。电极表面可以用多孔材料涂覆以减少由于脆性破坏引起的侵蚀。电极表面可以涂覆有假合金，以减少由电极表面上的熔融材料中的等离子体引起的表面波的侵蚀。

8. 发明授权

US07180082B1 Method for plasma formation for extreme ultraviolet lithography-theta pinch 有权
标题翻译：用于等离子体形成的方法用于极紫外光刻-θ夹点
公开(公告)号：US07180082B1
公开(公告)日：2007-02-20
申请号：US11066655
申请日：2005-02-22
申请人： Ahmed Hassanein , Isak Konkashbaev , Bryan Rice
发明人： Ahmed Hassanein , Isak Konkashbaev , Bryan Rice
IPC分类号： A61N5/06 , G01J3/10 , H05G2/00
CPC分类号： H05G2/003 , B82Y10/00 , G03F7/70033 , H05G2/005
摘要： A device and method for generating extremely short-wave ultraviolet electromagnetic wave, utilizing a theta pinch plasma generator to produce electromagnetic radiation in the range of 10 to 20 nm. The device comprises an axially aligned open-ended pinch chamber defining a plasma zone adapted to contain a plasma generating gas within the plasma zone; a means for generating a magnetic field radially outward of the open-ended pinch chamber to produce a discharge plasma from the plasma generating gas, thereby producing a electromagnetic wave in the extreme ultraviolet range; a collecting means in optical communication with the pinch chamber to collect the electromagnetic radiation; and focusing means in optical communication with the collecting means to concentrate the electromagnetic radiation.
摘要翻译：一种用于产生极短波紫外线电磁波的装置和方法，其利用θ收缩等离子体发生器产生在10至20nm范围内的电磁辐射。所述装置包括轴向对准的开口收缩室，其限定适于在等离子体区域内容纳等离子体产生气体的等离子体区域; 用于产生位于所述开放式收缩室的径向外侧的磁场的装置，以从所述等离子体产生气体产生放电等离子体，由此产生极紫外范围的电磁波; 收集装置，与收集室进行光通信以收集电磁辐射; 以及聚焦装置，与收集装置进行光学通信，以集中电磁辐射。

9. 发明申请

US20070235666A1 Plasma-Based Debris Mitigation for Extreme Ultraviolet (EUV) Light Source 有权
标题翻译：极端紫外线（EUV）光源基于等离子体的碎片减轻
公开(公告)号：US20070235666A1
公开(公告)日：2007-10-11
申请号：US11762011
申请日：2007-06-12
申请人： David Ruzic , Robert Bristol , Bryan Rice
发明人： David Ruzic , Robert Bristol , Bryan Rice
IPC分类号： H01J35/00
CPC分类号： B82Y10/00 , G03F7/70033 , G03F7/70166 , G03F7/70916 , H01J37/321 , H01J2237/022 , H05G2/001
摘要： A light source chamber in an Extreme Ultraviolet (EUV) lithography system may include a secondary plasma to ionize debris particles created by the light source and a foil trap to trap the ionize particles to avoid contamination of the collector optics in the chamber.
摘要翻译：极紫外（EUV）光刻系统中的光源室可以包括用于离子化由光源产生的碎屑颗粒的二次等离子体和箔陷阱以捕获电离粒子，以避免腔室中的收集器光学元件的污染。

10. 发明申请

US20060102986A1 Forming a reticle for extreme ultraviolet radiation and structures formed thereby 有权
标题翻译：形成用于极紫外线辐射的掩模版和由此形成的结构
公开(公告)号：US20060102986A1
公开(公告)日：2006-05-18
申请号：US10991246
申请日：2004-11-16
申请人： Kramadhati Ravi , Bryan Rice
发明人： Kramadhati Ravi , Bryan Rice
IPC分类号： H01L29/06 , H01L21/46
CPC分类号： H01L21/76256
摘要： Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a plurality of openings in a portion of a first side of a substrate, bonding a first silicon layer of a silicon on insulator wafer to the first side of the substrate, wherein the silicon on insulator wafer comprises the first silicon layer disposed on an insulator layer disposed on a second silicon layer, forming a plurality of support structures by removing a portion of a second side of the substrate, removing the second silicon layer and removing the insulator layer.
摘要翻译：描述形成微电子结构的方法。这些方法的实施例包括在衬底的第一侧的一部分中形成多个开口，将绝缘体上硅晶片上的第一硅层与衬底的第一侧接合，其中绝缘体上硅晶片包括第一硅层，设置在设置在第二硅层上的绝缘体层上，通过去除衬底的第二侧的一部分，去除第二硅层并去除绝缘体层，形成多个支撑结构。

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