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1. 发明申请

US20060002113A1 Adjustable illumination source 有权
公开(公告)号：US20060002113A1
公开(公告)日：2006-01-05
申请号：US10883297
申请日：2004-06-30
申请人： Manish Chandhok , Eric Panning , Bryan Rice
发明人： Manish Chandhok , Eric Panning , Bryan Rice
IPC分类号： F21S6/00
CPC分类号： B82Y10/00 , G03F7/70033 , G03F7/70175 , G03F7/70583
摘要： According to an embodiment of the invention, an adjustable EUV light source may be used for photolithography. The EUV light source, such as an electrode, is mounted in an adjustable housing. The housing can be adjusted to change the distance between the light source and focusing mirrors, which in turn changes the partial coherence value of the system. The partial coherence value can be changed to print different types of semiconductor features.

2. 发明申请

US20060093972A1 Active hardmask for lithographic patterning 失效
公开(公告)号：US20060093972A1
公开(公告)日：2006-05-04
申请号：US11293594
申请日：2005-12-02
申请人： Michael Goldstein , Manish Chandhok , Eric Panning , Robert Bristol , Bryan Rice
发明人： Michael Goldstein , Manish Chandhok , Eric Panning , Robert Bristol , Bryan Rice
IPC分类号： G03F7/00
CPC分类号： G03F7/091 , G03F7/11
摘要： In an implementation, energy reaching the lower surface of a photoresist may be redirected back into the photoresist material. This may be done by, for example, reflecting and/or fluorescing the energy from a hardmask provided on the wafer surface back into the photoresist.

3. 发明申请

US20060017024A1 Extreme ultraviolet illumination source 失效
公开(公告)号：US20060017024A1
公开(公告)日：2006-01-26
申请号：US10882784
申请日：2004-06-30
申请人： Manish Chandhok , Eric Panning , Bryan Rice
发明人： Manish Chandhok , Eric Panning , Bryan Rice
IPC分类号： G01J3/10
CPC分类号： G03F7/70916 , B82Y10/00 , G03F7/70033
摘要： According to a first embodiment of the invention, a dual cathode electrode for generating EUV light is disclosed. The dual cathode electrode may include a first outer cathode, a second inner cathode, and an anode disposed between the inner and outer cathodes. The dual cathode electrode also includes a plasma disposed in between the cathodes that emits EUV photons when it is excited by an arc between the anode and the cathodes. According to a second embodiment of the invention, several Dense Plasma Focus (DPF) electrodes are placed along a circle. The DPF electrodes, when activated, will emit electron photons from the circle in which they are placed thereby avoiding obscuration used to protect UV mirrors against debris.

4. 发明申请

US20060289810A1 Adjustment of distance between source plasma and mirrors to change partial coherence 失效
标题翻译：调整源等离子体和反射镜之间的距离以改变部分相干性
公开(公告)号：US20060289810A1
公开(公告)日：2006-12-28
申请号：US11433412
申请日：2006-05-12
申请人： Manish Chandhok , Eric Panning , Bryan Rice
发明人： Manish Chandhok , Eric Panning , Bryan Rice
IPC分类号： G01J3/10
CPC分类号： B82Y10/00 , G03F7/70033 , G03F7/70175 , G03F7/70583
摘要： According to an embodiment of the invention, an adjustable EUV light source may be used for photolithography. The EUV light source, such as an electrode, is mounted in an adjustable housing. The housing can be adjusted to change the distance between the light source and focusing mirrors, which in turn changes the partial coherence value of the system. The partial coherence value can be changed to print different types of semiconductor features.
摘要翻译：根据本发明的实施例，可调节的EUV光源可用于光刻。 EUV光源，例如电极，安装在可调整的外壳中。可以调整外壳以改变光源和聚焦镜之间的距离，这又改变了系统的部分相干值。可以改变部分相干值以打印不同类型的半导体特征。

5. 发明授权

US07033739B2 Active hardmask for lithographic patterning 失效
公开(公告)号：US07033739B2
公开(公告)日：2006-04-25
申请号：US10423466
申请日：2003-04-24
申请人： Michael Goldstein , Manish Chandhok , Eric Panning , Robert Bristol , Bryan J. Rice
发明人： Michael Goldstein , Manish Chandhok , Eric Panning , Robert Bristol , Bryan J. Rice
IPC分类号： G03F7/20
CPC分类号： G03F7/091 , G03F7/11
摘要： In an implementation, energy reaching the lower surface of a photoresist may be redirected back into the photoresist material. This may be done by, for example, reflecting and/or fluorescing the energy from a hardmask provided on the wafer surface back into the photoresist.

6. 发明授权

US07109504B2 Extreme ultraviolet illumination source 失效
标题翻译：极紫外线照明源
公开(公告)号：US07109504B2
公开(公告)日：2006-09-19
申请号：US10882784
申请日：2004-06-30
申请人： Manish Chandhok , Eric Panning , Bryan J. Rice
发明人： Manish Chandhok , Eric Panning , Bryan J. Rice
IPC分类号： H01J35/00
CPC分类号： G03F7/70916 , B82Y10/00 , G03F7/70033
摘要： According to a first embodiment of the invention, a dual cathode electrode for generating EUV light is disclosed. The dual cathode electrode may include a first outer cathode, a second inner cathode, and an anode disposed between the inner and outer cathodes. The dual cathode electrode also includes a plasma disposed in between the cathodes that emits EUV photons when it is excited by an arc between the anode and the cathodes. According to a second embodiment of the invention, several Dense Plasma Focus (DPF) electrodes are placed along a circle. The DPF electrodes, when activated, will emit electron photons from the circle in which they are placed thereby avoiding obscuration used to protect UV mirrors against debris.
摘要翻译：根据本发明的第一实施例，公开了一种用于产生EUV光的双阴极电极。双阴极可以包括第一外阴极，第二内阴极和设置在内阴极和外阴极之间的阳极。双阴极还包括设置在阴极之间的等离子体，其在由阳极和阴极之间的电弧激发时发射EUV光子。根据本发明的第二实施例，几个密集等离子体聚焦（DPF）电极沿着圆放置。 DPF电极在被激活时将从放置它们的圆中发射电子光子，从而避免用于保护UV镜免受碎片的遮蔽。

7. 发明授权

US07527920B2 Active hardmask for lithographic patterning 失效
标题翻译：用于光刻图案的主动硬掩模
公开(公告)号：US07527920B2
公开(公告)日：2009-05-05
申请号：US11293594
申请日：2005-12-02
申请人： Michael Goldstein , Manish Chandhok , Eric Panning , Robert Bristol , Bryan J. Rice
发明人： Michael Goldstein , Manish Chandhok , Eric Panning , Robert Bristol , Bryan J. Rice
IPC分类号： G03F7/20
CPC分类号： G03F7/091 , G03F7/11
摘要： In an implementation, energy reaching the lower surface of a photoresist may be redirected back into the photoresist material. This may be done by, for example, reflecting and/or fluorescing the energy from a hardmask provided on the wafer surface back into the photoresist.
摘要翻译：在一个实现中，到达光致抗蚀剂的下表面的能量可以被重定向回到光致抗蚀剂材料中。这可以通过例如将设置在晶片表面上的硬掩模的能量反射和/或发射到光致抗蚀剂中来完成。

8. 发明申请

US20060000985A1 Optics for extreme ultraviolet lithography 失效
标题翻译：极光紫外光刻光学
公开(公告)号：US20060000985A1
公开(公告)日：2006-01-05
申请号：US10883048
申请日：2004-06-30
申请人： Manish Chandhok , Bryan Rice , Robert Bristol
发明人： Manish Chandhok , Bryan Rice , Robert Bristol
IPC分类号： G03F7/20
CPC分类号： G03F7/70175 , G03F7/70033 , G21K1/06
摘要： According to an embodiment of the invention, extreme ultraviolet (EUV) photolithography is performed using lobster eye transmission optics. A light source, such as a source plasma, is located at the center of a circle. Several mirror segments are arranged on an arc of the circle. The mirror segments may be arranged so that the light generated by the light source is collimated after being reflected. The light source may be a source plasma capable of generating EUV photons.
摘要翻译：根据本发明的实施例，使用龙虾眼传输光学器件执行极紫外（EUV）光刻。诸如源等离子体的光源位于圆的中心。圆弧上设有几个镜片段。镜片段可以被布置成使得由光源产生的光在被反射之后被准直。光源可以是能够产生EUV光子的源等离子体。

9. 发明授权

US07449264B2 Compensation of reflective mask effects in lithography systems 失效
标题翻译：光刻系统中反射掩模效应的补偿
公开(公告)号：US07449264B2
公开(公告)日：2008-11-11
申请号：US11293593
申请日：2005-12-02
申请人： Manish Chandhok , Michael Goldstein
发明人： Manish Chandhok , Michael Goldstein
IPC分类号： G03F1/00 , G01B9/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/24 , G03F7/70283 , G03F7/70425 , G03F7/706
摘要： Aberrations may be introduced in mirror surfaces used in a lithography system utilizing a reflective mask to compensate for adverse optical effects associated with reflective masks. A spherical aberration may be introduced to compensate for a shift in the location of best focus. A coma aberration may be introduced to compensate for a pattern shift.
摘要翻译：可以在使用反射掩模的光刻系统中使用的镜面中引入像差，以补偿与反射掩模相关的不利的光学效应。可以引入球面像差以补偿最佳聚焦位置的偏移。可以引入彗形像差以补偿图案偏移。

10. 发明申请

US20080145792A1 REDUCTION OF LINE EDGE ROUGHNESS WITH A CONFORMAL COATING OF A SEALANT 审中-公开
标题翻译：减少线密封粗糙度与密封胶的合适涂层
公开(公告)号：US20080145792A1
公开(公告)日：2008-06-19
申请号：US11548580
申请日：2006-10-11
申请人： Manish Chandhok , Robert P. Meagley
发明人： Manish Chandhok , Robert P. Meagley
IPC分类号： G03C5/00
CPC分类号： G03F7/40
摘要： A base-loaded polymer is applied to a semiconductor feature formed after exposing and developing a photoresist layer in order to reduce line edge roughness caused by a residual acid collecting on the edges of the feature during the post-exposure bake of the photoresist. Alternatively, a polymer is applied containing grains that are of suitable size for smoothing the line edge roughness.
摘要翻译：将基底负载的聚合物施加到在曝光和显影光致抗蚀剂层之后形成的半导体特征，以便在光致抗蚀剂的后曝光烘烤期间减少由在特征的边缘上收集的残留酸引起的线边缘粗糙度。或者，施加含有适于使线边缘粗糙度平滑的合适尺寸的颗粒的聚合物。

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