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1. 发明申请

US20150348839A1 DIRECTED SELF ASSEMBLY OF BLOCK COPOLYMERS TO FORM VIAS ALIGNED WITH INTERCONNECTS 审中-公开
标题翻译：方向自组装块状共聚物形成与互连对齐的VIAS
公开(公告)号：US20150348839A1
公开(公告)日：2015-12-03
申请号：US14822865
申请日：2015-08-10
申请人： Paul A. Nyhus , Swaminathan Sivakumar , Robert Bristol
发明人： Paul A. Nyhus , Swaminathan Sivakumar , Robert Bristol
IPC分类号： H01L21/768 , H01L21/311 , H01L23/522 , H01L21/033
CPC分类号： H01L21/76877 , H01L21/0337 , H01L21/31144 , H01L21/76811 , H01L21/76816 , H01L23/5226 , H01L2924/0002 , H01L2924/00
摘要： A method of an aspect includes forming an interconnect line etch opening in a hardmask layer. The hardmask layer is over a dielectric layer that has an interconnect line disposed therein. The interconnect line etch opening is formed aligned over the interconnect line. A block copolymer is introduced into the interconnect line etch opening. The block copolymer is assembled to form a plurality of assembled structures that are spaced along a length of the interconnect line etch opening. An assembled structure is directly aligned over the interconnect line that is disposed within the dielectric layer.
摘要翻译：一方面的方法包括在硬掩模层中形成互连线蚀刻开口。硬掩模层位于其中布置有互连线的电介质层上。互连线蚀刻开口在互连线上形成对准。将嵌段共聚物引入到互连线蚀刻开口中。嵌段共聚物被组装以形成沿着互连线蚀刻开口的长度间隔开的多个组装结构。组装的结构在设置在电介质层内的互连线上直接对准。

2. 发明授权

US07652272B2 Plasma-based debris mitigation for extreme ultraviolet (EUV) light source 有权
标题翻译：用于极紫外（EUV）光源的等离子体碎片减轻
公开(公告)号：US07652272B2
公开(公告)日：2010-01-26
申请号：US11762011
申请日：2007-06-12
申请人： David Ruzic , Robert Bristol , Bryan J. Rice
发明人： David Ruzic , Robert Bristol , Bryan J. Rice
IPC分类号： H01J35/00
CPC分类号： B82Y10/00 , G03F7/70033 , G03F7/70166 , G03F7/70916 , H01J37/321 , H01J2237/022 , H05G2/001
摘要： A light source chamber in an Extreme Ultraviolet (EUV) lithography system may include a secondary plasma to ionize debris particles created by the light source and a foil trap to trap the ionize particles to avoid contamination of the collector optics in the chamber.
摘要翻译：极紫外（EUV）光刻系统中的光源室可以包括用于离子化由光源产生的碎屑颗粒的二次等离子体和箔陷阱以捕获电离粒子，以避免腔室中的收集器光学元件的污染。

3. 发明授权

US07527920B2 Active hardmask for lithographic patterning 失效
标题翻译：用于光刻图案的主动硬掩模
公开(公告)号：US07527920B2
公开(公告)日：2009-05-05
申请号：US11293594
申请日：2005-12-02
申请人： Michael Goldstein , Manish Chandhok , Eric Panning , Robert Bristol , Bryan J. Rice
发明人： Michael Goldstein , Manish Chandhok , Eric Panning , Robert Bristol , Bryan J. Rice
IPC分类号： G03F7/20
CPC分类号： G03F7/091 , G03F7/11
摘要： In an implementation, energy reaching the lower surface of a photoresist may be redirected back into the photoresist material. This may be done by, for example, reflecting and/or fluorescing the energy from a hardmask provided on the wafer surface back into the photoresist.
摘要翻译：在一个实现中，到达光致抗蚀剂的下表面的能量可以被重定向回到光致抗蚀剂材料中。这可以通过例如将设置在晶片表面上的硬掩模的能量反射和/或发射到光致抗蚀剂中来完成。

4. 发明授权

US07423275B2 Erosion mitigation for collector optics using electric and magnetic fields 有权
标题翻译：使用电场和磁场的集光器光栅的侵蚀减轻
公开(公告)号：US07423275B2
公开(公告)日：2008-09-09
申请号：US10759344
申请日：2004-01-15
申请人： Sang Hun Lee , Robert Bristol , Arun Ramamoorthy
发明人： Sang Hun Lee , Robert Bristol , Arun Ramamoorthy
IPC分类号： H01J1/50
CPC分类号： G03F7/70916 , H01L21/0273
摘要： A magnetic and/or electric field may be generated around collector optics in an EUV lithography system to deflect debris particles from the reflective surfaces of the optics. The magnetic and/or electric field may be generated by a solenoid structure around the optics or by passing current through inner an outer shells in a nested shell arrangement.
摘要翻译：可以在EUV光刻系统中的收集器光学器件周围产生磁场和/或电场，以使来自光学器件的反射表面的碎屑颗粒偏转。磁场和/或电场可以通过围绕光学器件的螺线管结构产生，或者通过将电流传递通过嵌套壳体布置中的外部外壳。

5. 发明授权

US07374867B2 Enhancing photoresist performance using electric fields 有权
标题翻译：使用电场增强光致抗蚀剂性能
公开(公告)号：US07374867B2
公开(公告)日：2008-05-20
申请号：US10679816
申请日：2003-10-06
申请人： Robert Bristol , Heidi Cao , Manish Chandhok , Robert Meagley , Vijayakumar S. Ramachandrarao
发明人： Robert Bristol , Heidi Cao , Manish Chandhok , Robert Meagley , Vijayakumar S. Ramachandrarao
IPC分类号： G03F7/26
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/24 , G03F7/093 , G03F7/11 , G03F7/168 , G03F7/2002 , G03F7/3007 , G03F7/38
摘要： Electric fields may be advantageously used in various steps of photolithographic processes. For example, prior to the pre-exposure bake, photoresists that have been spun-on the wafer may be exposed to an electric field to orient aggregates or other components within the unexposed photoresist. By aligning these aggregates or other components with the electric field, line edge roughness may be reduced, for example in connection with 193 nanometer photoresist. Likewise, during exposure, electric fields may be applied through uniquely situated electrodes or using a radio frequency coil. In addition, electric fields may be applied at virtually any point in the photolithography process by depositing a conductive electrode, which is subsequently removed during development. Finally, electric fields may be applied during the developing process to improve line edge roughness.
摘要翻译：电场可以有利地用于光刻工艺的各个步骤。例如，在预曝光烘烤之前，已经旋涂在晶片上的光致抗蚀剂可以暴露于电场以取向未曝光的光致抗蚀剂内的聚集体或其它组分。通过将这些聚集体或其它组分与电场对准，可以减少线边缘粗糙度，例如与193纳米光致抗蚀剂结合。同样地，在曝光期间，可以通过独特的电极或使用射频线圈施加电场。此外，可以通过沉积导电电极在光刻工艺中的几乎任何点处施加电场，导电电极随后在显影期间被去除。最后，可以在显影过程中施加电场以改善线边缘粗糙度。

6. 发明授权

US07153615B2 Extreme ultraviolet pellicle using a thin film and supportive mesh 有权
标题翻译：极紫外线防护薄膜使用薄膜和支撑网
公开(公告)号：US07153615B2
公开(公告)日：2006-12-26
申请号：US10645877
申请日：2003-08-20
申请人： Robert Bristol , Bryan J. Rice
发明人： Robert Bristol , Bryan J. Rice
IPC分类号： G03F1/00
CPC分类号： G03F1/62 , B32B5/18 , B32B27/06 , B82Y10/00 , B82Y40/00 , C08J5/04 , G03F1/24 , Y10T428/24917
摘要： An extreme ultraviolet (EUV) pellicle including a thin film or membrane and a supportive wire mesh. The pellicle allows EUV radiation to pass through the pellicle to a reticle but prevents particles from passing through the pellicle. A buffer gas supports the film against the wire mesh. The film or membrane may be embedded with support fibers or beams.
摘要翻译：包括薄膜或膜的极紫外（EUV）防护薄膜和支撑丝网。防护薄膜可使EUV辐射通过防护薄膜到掩模版，但防止颗粒通过防护薄膜。缓冲气体将薄膜支撑在金属丝网上。膜或膜可以嵌入支撑纤维或梁。

7. 发明授权

US07078700B2 Optics for extreme ultraviolet lithography 失效
公开(公告)号：US07078700B2
公开(公告)日：2006-07-18
申请号：US10883048
申请日：2004-06-30
申请人： Manish Chandhok , Bryan J. Rice , Robert Bristol
发明人： Manish Chandhok , Bryan J. Rice , Robert Bristol
IPC分类号： G03F7/20 , G03F9/00
CPC分类号： G03F7/70175 , G03F7/70033 , G21K1/06
摘要： According to an embodiment of the invention, extreme ultraviolet (EUV) photolithography is performed using lobster eye transmission optics. A light source, such as a source plasma, is located at the center of a circle. Several mirror segments are arranged on an arc of the circle. The mirror segments may be arranged so that the light generated by the light source is collimated after being reflected. The light source may be a source plasma capable of generating EUV photons.

8. 发明申请

US20060017027A1 Debris mitigation device 有权
标题翻译：碎片缓解装置
公开(公告)号：US20060017027A1
公开(公告)日：2006-01-26
申请号：US11193212
申请日：2005-07-29
申请人： Robert Bristol
发明人： Robert Bristol
IPC分类号： H01J5/18 , H01J3/14
CPC分类号： G03F7/70916
摘要： Numerous embodiments of a debris mitigation device are disclosed. One embodiment of the claimed subject matter may comprise a debris mitigation device for use in photolithography processes. In one embodiment, the debris mitigation device comprises a foil trap device. The foil trap device, in this embodiment, comprises a plurality of electrically conductive elements and one or more mounting devices, where the plurality of electrically conductive elements are coupled to the one or more mounting devices in such as way as to provide a space between one or more adjacent elements. In this embodiment, the elements are foil elements, and adjacent foil elements carry alternating potentials.
摘要翻译：公开了碎片减轻装置的许多实施例。所要求保护的主题的一个实施例可以包括用于光刻工艺的碎片缓解装置。在一个实施例中，碎片缓解装置包括箔陷阱装置。在该实施例中，箔捕获装置包括多个导电元件和一个或多个安装装置，其中多个导电元件以这样的方式联接到一个或多个安装装置，以便在一个或更多的相邻元件。在该实施例中，元件是箔元件，并且相邻的箔元件承载交替电位。

9. 发明申请

US20060000489A1 In-situ cleaning of light source collector optics 失效
标题翻译：光源收集器光学原位清洗
公开(公告)号：US20060000489A1
公开(公告)日：2006-01-05
申请号：US11217008
申请日：2005-08-30
申请人： Michael Chan , Robert Bristol , Mark Doczy
发明人： Michael Chan , Robert Bristol , Mark Doczy
IPC分类号： B08B6/00
CPC分类号： G21K1/06 , B08B7/0057 , G03F7/70925 , Y10S134/902
摘要： A method for cleaning optics in a chamber. The method can include introducing a first etchant into a chamber that encloses an optical component and a source of electromagnetic radiation that is suitable for lithography, ionizing the first etchant, and removing debris from a surface of the optical component.
摘要翻译：一种清洁室内光学元件的方法。该方法可以包括将第一蚀刻剂引入到包围光学部件的室中，以及适于光刻的电磁辐射源，电离第一蚀刻剂，以及从光学部件的表面去除碎屑。

10. 发明授权

US06968850B2 In-situ cleaning of light source collector optics 失效
标题翻译：光源收集器光学原位清洗
公开(公告)号：US06968850B2
公开(公告)日：2005-11-29
申请号：US10197628
申请日：2002-07-15
申请人： Michael Chan , Robert Bristol , Mark Doczy
发明人： Michael Chan , Robert Bristol , Mark Doczy
IPC分类号： B08B7/00 , G03F7/20
CPC分类号： G21K1/06 , B08B7/0057 , G03F7/70925 , Y10S134/902
摘要： A method and system for cleaning collector optics in a light source chamber. In producing, for example, extreme ultraviolet light for lithography, debris such as tungsten can accumulate on optical components near a light source in the light source chamber.An etchant, such as a fluorine-containing gas, can be introduced into the light source chamber. The etchant is ionized via electrodes to generate free fluorine. The electrodes can be, for example, existing light source chamber components including the optical components. The fluorine can then react with the debris, forming gaseous compounds, which are pumped out of the light source chamber.
摘要翻译：一种用于清洁光源室中的收集器光学元件的方法和系统。例如，在制造用于光刻的极紫外光时，诸如钨的碎屑可以积聚在光源室中的光源附近的光学部件上。诸如含氟气体的蚀刻剂可以被引入到光源室中。蚀刻剂通过电极离子化以产生游离氟。电极可以是例如包括光学部件的现有光源室部件。然后，氟可以与碎屑反应，形成气体化合物，其被泵送出光源室。

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