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1. 发明授权

US06921468B2 Electroplating system having auxiliary electrode exterior to main reactor chamber for contact cleaning operations 失效
标题翻译：具有辅助电极的电镀系统，用于主反应室外部用于接触清洁操作
公开(公告)号：US06921468B2
公开(公告)日：2005-07-26
申请号：US09910481
申请日：2001-07-19
申请人： Lyndon W. Graham , Kyle Hanson , Thomas L. Ritzdorf , Jeffrey I. Turner
发明人： Lyndon W. Graham , Kyle Hanson , Thomas L. Ritzdorf , Jeffrey I. Turner
IPC分类号： C25D5/08 , C25D7/12 , H01L21/00 , C25D17/00
CPC分类号： H01L21/67126 , C25D5/08 , C25D17/001
摘要： A system for electroplating a semiconductor wafer is set forth. The system comprises a first electrode in electrical contact with the semiconductor wafer and a second electrode. The first electrode and the semiconductor wafer form a cathode during electroplating of the semiconductor wafer. The second electrode forms an anode during electroplating of the semiconductor wafer. A reaction container defining a reaction chamber is also employed. The reaction chamber comprises an electrically conductive plating solution. At least a portion of each of the first electrode, the second electrode, and the semiconductor wafer contact the plating solution during electroplating of the semiconductor wafer. An auxiliary electrode is disposed exterior to the reaction chamber and positioned for contact with plating solution exiting the reaction chamber during cleaning of the first electrode to thereby provide an electrically conductive path between the auxiliary electrode and the first electrode. A power supply system is connected to supply plating power to the first and second electrodes during electroplating of the semiconductor wafer and is further connected to render the first electrode an anode and the auxiliary electrode a cathode during cleaning of the first electrode.
摘要翻译：阐述了一种用于电镀半导体晶片的系统。该系统包括与半导体晶片电接触的第一电极和第二电极。第一电极和半导体晶片在半导体晶片的电镀期间形成阴极。第二电极在电镀半导体晶片期间形成阳极。还使用限定反应室的反应容器。反应室包括导电电镀液。在半导体晶片的电镀期间，第一电极，第二电极和半导体晶片中的每一个的至少一部分与镀液接触。辅助电极设置在反应室的外部，并且定位成在清洁第一电极期间与离开反应室的电镀液接触，从而在辅助电极和第一电极之间提供导电路径。电源系统被连接以在半导体晶片的电镀期间向第一和第二电极提供电镀电力，并且在第一电极的清洁期间进一步连接以使第一电极为阳极，辅助电极为阴极。

2. 发明授权

US06270647B1 Electroplating system having auxiliary electrode exterior to main reactor chamber for contact cleaning operations 失效
标题翻译：具有辅助电极的电镀系统，用于主反应室外部用于接触清洁操作
公开(公告)号：US06270647B1
公开(公告)日：2001-08-07
申请号：US09387338
申请日：1999-08-31
申请人： Lyndon W. Graham , Kyle Hanson , Thomas L. Ritzdorf , Jeffrey I. Turner
发明人： Lyndon W. Graham , Kyle Hanson , Thomas L. Ritzdorf , Jeffrey I. Turner
IPC分类号： C25D2100
CPC分类号： H01L21/67126 , C25D5/08 , C25D7/12 , C25D17/001 , H01L21/6719 , H01L21/6723 , H01L21/67259 , H01L21/67769 , H01L21/67781
摘要： A system for electroplating a semiconductor wafer is set forth. The system comprises a first electrode in electrical contact with the semiconductor wafer and a second electrode. The first electrode and the semiconductor wafer form a cathode during electroplating of the semiconductor wafer. The second electrode forms an anode during electroplating of the semiconductor wafer. A reaction container defining a reaction chamber is also employed. The reaction chamber comprises an electrically conductive plating solution. At least a portion of each of the first electrode, the second electrode, and the semiconductor wafer contact the plating solution during electroplating of the semiconductor wafer. An auxiliary electrode is disposed exterior to the reaction chamber and positioned for contact with plating solution exiting the reaction chamber during cleaning of the first electrode to thereby provide an electrically conductive path between the auxiliary electrode and the first electrode. A power supply system is connected to supply plating power to the first and second electrodes during electroplating of the semiconductor wafer and is further connected to render the first electrode an anode and the auxiliary electrode a cathode during cleaning of the first electrode.
摘要翻译：阐述了一种用于电镀半导体晶片的系统。该系统包括与半导体晶片电接触的第一电极和第二电极。第一电极和半导体晶片在半导体晶片的电镀期间形成阴极。第二电极在电镀半导体晶片期间形成阳极。还使用限定反应室的反应容器。反应室包括导电电镀液。在半导体晶片的电镀期间，第一电极，第二电极和半导体晶片中的每一个的至少一部分与镀液接触。辅助电极设置在反应室的外部，并且定位成在清洁第一电极期间与离开反应室的电镀液接触，从而在辅助电极和第一电极之间提供导电路径。电源系统被连接以在半导体晶片的电镀期间向第一和第二电极提供电镀电力，并且在第一电极的清洁期间进一步连接以使第一电极为阳极，辅助电极为阴极。

3. 发明申请

US20070137679A1 SINGLE SIDE WORKPIECE PROCESSING 失效
标题翻译：单面工件加工
公开(公告)号：US20070137679A1
公开(公告)日：2007-06-21
申请号：US11678931
申请日：2007-02-26
申请人： Jason Rye , Kyle Hanson
发明人： Jason Rye , Kyle Hanson
IPC分类号： B08B3/00
CPC分类号： H01L21/6719 , C25D17/001 , C25D17/06 , H01L21/67051 , H01L21/67748 , H01L21/67751
摘要： A centrifugal workpiece processor for processing semiconductor wafers and similar workpieces includes a head which holds and spins the workpiece. The head includes a rotor having a gas system. Gas is sprayed or jetted from inlets in the rotor to create a rotational gas flow. The rotational gas flow causes pressure conditions which hold the edges of a first side of the workpiece against contact pins or surfaces on the rotor. The rotor and the workpiece rotate together. Guide pins adjacent to a perimeter may help to align the workpiece with the rotor. An angled surface helps to deflect spent process liquid away from the workpiece. The head is moveable into multiple different engagement positions with a bowl. Spray nozzles in the bowl spray a process liquid onto the second side of the workpiece, as the workpiece is spinning, to process the workpiece. A moving end point detector may be used to detect an end point of processing.
摘要翻译：用于处理半导体晶片和类似工件的离心工件处理器包括保持和旋转工件的头部。头包括具有气体系统的转子。气体从转子中的入口喷射或喷射以产生旋转气流。旋转气流导致压力条件，其保持工件的第一面的边缘抵靠转子上的接触销或表面。转子和工件一起旋转。与周边相邻的导销可能有助于将工件与转子对准。有角度的表面有助于将废工艺液体偏离工件。头部可以与碗一起移动到多个不同的接合位置。当工件旋转时，碗中的喷嘴将工艺液体喷射到工件的第二面上，以处理工件。可以使用移动端点检测器来检测处理的终点。

4. 发明申请

US20070068820A1 Electrolytic copper process using anion permeable barrier 有权
标题翻译：电解铜工艺采用阴离子渗透屏障
公开(公告)号：US20070068820A1
公开(公告)日：2007-03-29
申请号：US11416659
申请日：2006-05-03
申请人： Rajesh Baskaran , Robert Batz , Bioh Kim , Tom Ritzdorf , John Klocke , Kyle Hanson
发明人： Rajesh Baskaran , Robert Batz , Bioh Kim , Tom Ritzdorf , John Klocke , Kyle Hanson
IPC分类号： C25D21/06
CPC分类号： C25D7/123 , C25D3/02 , C25D3/38 , C25D5/022 , C25D17/001 , C25D17/002 , C25F3/02 , C25F7/00 , H01L21/2885 , H01L21/76843 , H01L21/76846 , H01L21/76868 , H01L21/76873 , H05K3/423
摘要： Processes and systems for electrolytically processing a microfeature workpiece with a first processing fluid and an anode are described. Microfeature workpieces are electrolytically processed using a first processing fluid, an anode, a second processing fluid, and an anion permeable barrier layer. The anion permeable barrier layer separates the first processing fluid from the second processing fluid while allowing certain anionic species to transfer between the two fluids. The described processes produce deposits over repeated plating cycles that exhibit resistivity values within desired ranges.
摘要翻译：描述了利用第一处理流体和阳极电解处理微特征工件的工艺和系统。使用第一处理流体，阳极，第二处理流体和阴离子可渗透阻挡层对微特征工件进行电解处理。阴离子可渗透阻挡层将第一处理流体与第二处理流体分离，同时允许某些阴离子物质在两种流体之间转移。所描述的过程在反复电镀循环中产生沉积物，其在所期望的范围内显示电阻率值。

5. 发明申请

US20060189129A1 Method for applying metal features onto barrier layers using ion permeable barriers 审中-公开
标题翻译：使用离子渗透屏障将金属特征施加到阻挡层上的方法
公开(公告)号：US20060189129A1
公开(公告)日：2006-08-24
申请号：US11413228
申请日：2006-04-28
申请人： Rajesh Baskaran , Bioh Kim , Robert Batz , Tom Ritzdorf , John Klocke , Kyle Hanson
发明人： Rajesh Baskaran , Bioh Kim , Robert Batz , Tom Ritzdorf , John Klocke , Kyle Hanson
IPC分类号： C25D5/34 , H01L21/44
CPC分类号： C25D3/02 , C25D5/38 , C25D5/54 , C25D7/123 , C25D17/00 , C25D17/001 , C25D17/002 , H01L21/288 , H01L21/2885 , H01L21/321 , H01L21/76843 , H01L21/76861 , H01L21/76873 , H01L21/76877 , H01L21/76883 , H01L21/76885
摘要： The methods described are directed to processes for producing structures containing metallized features for use in microelectronic workpieces. The processes treat a barrier layer to promote the adhesion between the barrier layer and the metallized feature. Suitable means for promoting adhesion between barrier layers and metallized features include an acid treatment of the barrier layer, an electrolytic treatment of the barrier layer, or deposition of a bonding layer between the barrier layer and metallized feature. The processes described modify an exterior surface of a barrier layer making it more suitable for electrodeposition of metal on a barrier, thus eliminating the need for a PVD or CVD seed layer deposition process. According to the processes described metallized features are formed on the treated barrier layers using processes that employ ion permeable barriers.
摘要翻译：所描述的方法涉及用于生产用于微电子工件的包含金属化特征的结构的方法。该方法处理阻挡层以促进阻挡层和金属化特征之间的粘附。用于促进阻挡层和金属化特征之间的粘合的合适方式包括阻挡层的酸处理，阻挡层的电解处理，或阻挡层和金属化特征之间的结合层的沉积。所描述的方法改变了阻挡层的外表面，使得其更适合于在屏障上电沉积金属，因此不需要PVD或CVD种子层沉积工艺。根据所述方法，使用采用离子可渗透屏障的方法在经处理的阻挡层上形成金属化特征。

6. 发明授权

US07002698B2 Semiconductor processing apparatus having lift and tilt mechanism 失效
公开(公告)号：US07002698B2
公开(公告)日：2006-02-21
申请号：US10721057
申请日：2003-11-24
申请人： Kyle Hanson , Mark Dix , Vlad Zila , Daniel J. Woodruff
发明人： Kyle Hanson , Mark Dix , Vlad Zila , Daniel J. Woodruff
IPC分类号： G01B11/14
CPC分类号： H01L21/67259 , H01L21/67173 , H01L21/6719 , H01L21/67196 , H01L21/67742 , H01L21/67769 , H01L21/67781
摘要： A lift/tilt assembly for use in a semiconductor wafer processing device is set forth. The lift/tilt assembly includes a linear way comprising a fixed frame and a moveable frame. A nest for accepting a plurality of semiconductor wafers is rotatably connected to the moveable frame. The nest rotates between a wafer-horizontal orientation and a wafer-vertical orientation as it is driven with the movable frame by a motor that is coupled to the linear way. A lever connected to the nest provides an offset from true vertical for the nest when the nest is in the wafer-vertical orientation.

7. 发明申请

US20050205409A1 Apparatus and methods for electrochemical processing of microelectronic workpieces 审中-公开
标题翻译：微电子工件电化学处理的装置和方法
公开(公告)号：US20050205409A1
公开(公告)日：2005-09-22
申请号：US11096965
申请日：2005-03-29
申请人： Kyle Hanson , Thomas Ritzdorf , Gregory Wilson , Paul McHugh
发明人： Kyle Hanson , Thomas Ritzdorf , Gregory Wilson , Paul McHugh
IPC分类号： C25D7/12 , C10B1/00 , C25C7/00 , C25D3/00 , C25D5/00 , C25D17/00 , C25D21/00 , H01L21/00
CPC分类号： H01L21/6719 , C25D7/123 , C25D17/001 , H01L21/67103 , H01L21/6723
摘要： An apparatus and method for electrochemical processing of microelectronic workpieces in a reaction vessel. In one embodiment, the reaction vessel includes: an outer container having an outer wall; a distributor coupled to the outer container, the distributor having a first outlet configured to introduce a primary flow into the outer container and at least one second outlet configured to introduce a secondary flow into the outer container separate from the primary flow; a primary flow guide in the outer container coupled to the distributor to receive the primary flow from the first outlet and direct it to a workpiece processing site; a dielectric field shaping unit in the outer container coupled to the distributor to receive the secondary flow from the second outlet, the field shaping unit being configured to contain the secondary flow separate from the primary flow through at least a portion of the outer container, and the field shaping unit having at least one electrode compartment through which the secondary flow can pass while the secondary flow is separate from the primary flow; an electrode in the electrode compartment; and an interface member carried by the field shaping unit downstream from the electrode, the interface member being in fluid communication with the secondary flow in the electrode compartment, and the interface member being configured to prevent selected matter of the secondary flow from passing to the primary flow.
摘要翻译：用于反应容器中微电子工件的电化学处理的装置和方法。在一个实施例中，反应容器包括：具有外壁的外容器; 分配器，其耦合到所述外部容器，所述分配器具有构造成将主流引入所述外部容器中的第一出口和构造成将二次流引导到与所述主流分离的所述外部容器中的至少一个第二出口; 外部容器中的主要流动引导件联接到分配器以接收来自第一出口的主流并将其引导到工件加工位置; 所述外容器中的电介质场成形单元联接到所述分配器以接收来自所述第二出口的二次流，所述场整形单元构造成容纳所述次流与所述主流分离通过所述外容器的至少一部分，以及所述场成形单元具有至少一个电极室，所述二次流可以通过所述至少一个电极室，而所述二次流与所述主流分离; 电极室中的电极; 以及由所述场成形单元承载在所述电极的下游的界面构件，所述界面构件与所述电极室中的所述次流体流体连通，并且所述界面构件被构造成防止所述二次流的选定物质通过所述主流流。

8. 发明申请

US20050109629A1 System for electrochemically processing a workpiece 审中-公开
公开(公告)号：US20050109629A1
公开(公告)日：2005-05-26
申请号：US10975843
申请日：2004-10-28
申请人： Gregory Wilson , Paul McHugh , Kyle Hanson
发明人： Gregory Wilson , Paul McHugh , Kyle Hanson
IPC分类号： C25D7/12 , B05C3/00 , B05C3/20 , B23H3/00 , C02F20060101 , C25B9/00 , C25C7/00 , C25D3/02 , C25D5/00 , C25D5/04 , C25D5/08 , C25D7/00 , C25D11/32 , C25D17/00 , C25D17/02 , C25D17/12 , C25D21/00
CPC分类号： C25D17/02 , C25D5/08 , C25D17/001 , Y10S204/07
摘要： A reactor for electrochemically processing at least one surface of a microelectronic workpiece is set forth. The reactor comprises a reactor head including a workpiece support that has one or more electrical contacts positioned to make electrical contact with the microelectronic workpiece. The reactor also includes a processing container having a plurality of nozzles angularly disposed in a sidewall of a principal fluid flow chamber at a level within the principal fluid flow chamber below a surface of a bath of processing fluid normally contained therein during electrochemical processing. A plurality of anodes are disposed at different elevations in the principal fluid flow chamber so as to place them at difference distances from a microelectronic workpiece under process without an intermediate diffuser between the plurality of anodes and the microelectronic workpiece under process. One or more of the plurality of anodes may be in close proximity to the workpiece under process. Still further, one or more of the plurality of anodes may be a virtual anode. The present invention also related to multi-level anode configurations within a principal fluid flow chamber and methods of using the same.

9. 发明申请

US20050109625A1 System for electrochemically processing a workpiece 审中-公开
公开(公告)号：US20050109625A1
公开(公告)日：2005-05-26
申请号：US10975738
申请日：2004-10-28
申请人： Gregory Wilson , Paul McHugh , Kyle Hanson
发明人： Gregory Wilson , Paul McHugh , Kyle Hanson
IPC分类号： C25D7/12 , B05C3/00 , B05C3/20 , B23H3/00 , C02F20060101 , C25B9/00 , C25C7/00 , C25D3/02 , C25D5/00 , C25D5/04 , C25D5/08 , C25D7/00 , C25D11/32 , C25D17/00 , C25D17/02 , C25D17/12 , C25D21/00
CPC分类号： C25D17/02 , C25D5/08 , C25D17/001 , Y10S204/07
摘要： A reactor for electrochemically processing at least one surface of a microelectronic workpiece is set forth. The reactor comprises a reactor head including a workpiece support that has one or more electrical contacts positioned to make electrical contact with the microelectronic workpiece. The reactor also includes a processing container having a plurality of nozzles angularly disposed in a sidewall of a principal fluid flow chamber at a level within the principal fluid flow chamber below a surface of a bath of processing fluid normally contained therein during electrochemical processing. A plurality of anodes are disposed at different elevations in the principal fluid flow chamber so as to place them at difference distances from a microelectronic workpiece under process without an intermediate diffuser between the plurality of anodes and the microelectronic workpiece under process. One or more of the plurality of anodes may be in close proximity to the workpiece under process. Still further, one or more of the plurality of anodes may be a virtual anode. The present invention also related to multi-level anode configurations within a principal fluid flow chamber and methods of using the same.

10. 发明申请

US20050035046A1 Wet chemical processing chambers for processing microfeature workpieces 审中-公开
公开(公告)号：US20050035046A1
公开(公告)日：2005-02-17
申请号：US10860384
申请日：2004-06-03
申请人： Kyle Hanson , Kert Dolechek
发明人： Kyle Hanson , Kert Dolechek
IPC分类号： B01D63/00 , C23F1/00 , C25D17/00 , G01M3/04
CPC分类号： H01L21/6723 , B01D61/425 , C25D17/00 , H01L21/67005 , H01L21/6719 , H01L21/67742 , H01L21/68707
摘要： A wet chemical processing chamber comprising a fixed unit, a detachable unit releasably coupled to the fixed unit, a seal contacting the fixed unit and the detachable unit, and a processing component disposed in the fixed unit and/or the detachable unit. The fixed unit can have a first flow system configured to direct a processing fluid through the fixed unit and a mounting fixture for fixedly attaching the fixed unit to a platform or deck of an integrated processing tool. The detachable unit can include a second flow system configured to direct the processing fluid to and/or from the first flow system of the fixed unit. The seal has an orifice through which processing fluid can flow between the first and second flow systems, and the processing component can impart a property to the processing fluid for processing a surface on a microfeature workpiece having submicron microfeatures.

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