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1. 发明授权

US07002698B2 Semiconductor processing apparatus having lift and tilt mechanism 失效
公开(公告)号：US07002698B2
公开(公告)日：2006-02-21
申请号：US10721057
申请日：2003-11-24
申请人： Kyle Hanson , Mark Dix , Vlad Zila , Daniel J. Woodruff
发明人： Kyle Hanson , Mark Dix , Vlad Zila , Daniel J. Woodruff
IPC分类号： G01B11/14
CPC分类号： H01L21/67259 , H01L21/67173 , H01L21/6719 , H01L21/67196 , H01L21/67742 , H01L21/67769 , H01L21/67781
摘要： A lift/tilt assembly for use in a semiconductor wafer processing device is set forth. The lift/tilt assembly includes a linear way comprising a fixed frame and a moveable frame. A nest for accepting a plurality of semiconductor wafers is rotatably connected to the moveable frame. The nest rotates between a wafer-horizontal orientation and a wafer-vertical orientation as it is driven with the movable frame by a motor that is coupled to the linear way. A lever connected to the nest provides an offset from true vertical for the nest when the nest is in the wafer-vertical orientation.

2. 发明授权

US06645355B2 Semiconductor processing apparatus having lift and tilt mechanism 失效
标题翻译：具有升降机构的半导体处理装置
公开(公告)号：US06645355B2
公开(公告)日：2003-11-11
申请号：US09944828
申请日：2001-08-31
申请人： Kyle Hanson , Mark Dix , Vlad Zila , Daniel J. Woodruff
发明人： Kyle Hanson , Mark Dix , Vlad Zila , Daniel J. Woodruff
IPC分类号： C25D1700
CPC分类号： H01L21/67769 , H01L21/67173 , H01L21/6719 , H01L21/67196 , H01L21/67259 , H01L21/67742 , H01L21/67781
摘要： A lift/tilt assembly for use in a semiconductor wafer processing device is set forth. The lift/tilt assembly includes a linear guide comprising a fixed frame and a moveable frame. A nest for accepting a plurality of semiconductor wafers is rotatably connected to the moveable frame. The nest rotates between a wafer-horizontal orientation and a wafer-vertical orientation as it is driven with the movable frame by a motor that is coupled to the linear way. A lever connected to the nest provides an offset from true vertical for the nest when the nest is in the wafer-vertical orientation.
摘要翻译：阐述了用于半导体晶片处理装置的提升/倾斜组件。提升/倾斜组件包括包括固定框架和可移动框架的线性导轨。用于接收多个半导体晶片的嵌座可旋转地连接到可移动框架。当它由与可线性方式耦合的电动机用可移动框架驱动时，嵌套在晶片水平取向和晶片垂直取向之间旋转。当嵌套处于晶片垂直方向时，连接到嵌套的杠杆提供与巢的真垂直的偏移。

3. 发明授权

US06091498A Semiconductor processing apparatus having lift and tilt mechanism 失效
标题翻译：具有升降机构的半导体处理装置
公开(公告)号：US06091498A
公开(公告)日：2000-07-18
申请号：US991062
申请日：1997-12-15
申请人： Kyle Hanson , Mark Dix , Vladimir Zila , Daniel J. Woodruff
发明人： Kyle Hanson , Mark Dix , Vladimir Zila , Daniel J. Woodruff
IPC分类号： B65G49/07 , B25J9/06 , C25D7/12 , H01L21/00 , H01L21/677 , H01L21/68 , H01L21/687 , G01B11/14 , G01N21/00
CPC分类号： H01L21/67259 , H01L21/67173 , H01L21/6719 , H01L21/67196 , H01L21/67742 , H01L21/67769 , H01L21/67781
摘要： A lift/tilt assembly for use in a semiconductor wafer processing device is set forth. The lift/tilt assembly includes a linear guide/actuator comprising a fixed frame and a movable frame. A nest for accepting a plurality of semiconductor wafers is rotatably connected to the movable frame. The nest rotates between a wafer-horizontal orientation and a wafer-vertical orientation as it is driven with the movable frame by a motor that is coupled to the linear way. A lever connected to the nest provides an offset from true vertical for the nest when the nest is in the wafer-vertical orientation.
摘要翻译：阐述了用于半导体晶片处理装置的提升/倾斜组件。提升/倾斜组件包括具有固定框架和可移动框架的线性导向/致动器。用于接收多个半导体晶片的嵌套可旋转地连接到可移动框架。当它由与可线性方式耦合的电动机用可移动框架驱动时，嵌套在晶片水平取向和晶片垂直取向之间旋转。当嵌套处于晶片垂直方向时，连接到嵌套的杠杆提供与巢的真垂直的偏移。

4. 发明授权

US06654122B1 Semiconductor processing apparatus having lift and tilt mechanism 失效
公开(公告)号：US06654122B1
公开(公告)日：2003-11-25
申请号：US09618707
申请日：2000-07-18
申请人： Kyle Hanson , Mark Dix , Vladimir Zila , Daniel J. Woodruff
发明人： Kyle Hanson , Mark Dix , Vladimir Zila , Daniel J. Woodruff
IPC分类号： G01B1114
CPC分类号： H01L21/67259 , H01L21/67173 , H01L21/6719 , H01L21/67196 , H01L21/67742 , H01L21/67769 , H01L21/67781
摘要： A lift/tilt assembly for use in a semiconductor wafer processing device is set forth. The lift/tilt assembly includes a linear guide comprising a fixed frame and a moveable frame. A nest for accepting a plurality of semiconductor wafers is rotatably connected to the moveable frame. The nest rotates between a wafer-horizontal orientation and a wafer-vertical orientation as it is driven with the movable frame by a motor that is coupled to the linear way. A lever connected to the nest provides an offset from true vertical for the nest when the nest is in the wafer-vertical orientation.

5. 发明授权

US06672820B1 Semiconductor processing apparatus having linear conveyer system 失效
标题翻译：具有线性输送系统的半导体处理装置
公开(公告)号：US06672820B1
公开(公告)日：2004-01-06
申请号：US08990107
申请日：1997-12-15
申请人： Kyle Hanson , Mark Dix , Daniel J. Woodruff , Wayne J. Schmidt , Kevin W. Coyle
发明人： Kyle Hanson , Mark Dix , Daniel J. Woodruff , Wayne J. Schmidt , Kevin W. Coyle
IPC分类号： B65H500
CPC分类号： H01L21/681 , C25D7/12 , C25D17/001 , H01L21/6715 , H01L21/67173 , H01L21/67196 , H01L21/67259 , H01L21/67742 , H01L21/67769 , H01L21/67781
摘要： A transport system for manipulating a semiconductor wafer in a processing tool is set forth. The system includes a transport unit guide disposed within the processing tool for supporting a wafer transfer unit as the unit moves between a first position and a second position. The transport unit guide comprises a frame, a lateral guide rail mounted on the frame, and a series of magnetic segments arranged upon the transport unit guide proximate the lateral guide rail. The wafer transfer unit includes a tram translatably attached to the lateral guide rail and a wafer transfer arm assembly for manipulating the semiconductor wafer. An electromagnet is mounted on the tram in cooperative relation with the magnetic segments for moving the transfer unit along the guide rail. Actuators are used for controlling the position of the transfer unit and transfer arm assembly, and sensors are used for determining the position of the transfer unit and the transfer arm assembly. A controller is disposed remote of the wafer transfer unit and directs the movement of the transfer unit and transfer arm assembly in response to the sensors using the actuators. A communication link is established between the actuators, sensors and controller. Preferably, the communication link is a fiber optic link.
摘要翻译：阐述了在处理工具中操纵半导体晶片的传送系统。该系统包括设置在处理工具内的传送单元引导件，用于当单元在第一位置和第二位置之间移动时支撑晶片传送单元。运输单元引导件包括框架，安装在框架上的横向导轨以及布置在靠近横向导轨的传送单元引导件上的一系列磁性段。晶片传送单元包括可平移地附接到横向导轨的电车和用于操纵半导体晶片的晶片传送臂组件。一个电磁铁与磁性部件协调地安装在电车上，用于沿着导轨移动传送单元。驱动器用于控制传送单元和传送臂组件的位置，传感器用于确定传送单元和传送臂组件的位置。控制器设置在远离晶片传送单元的位置，并响应于使用致动器的传感器引导传送单元和传送臂组件的移动。在执行器，传感器和控制器之间建立通信链路。优选地，通信链路是光纤链路。

6. 发明申请

US20070137679A1 SINGLE SIDE WORKPIECE PROCESSING 失效
标题翻译：单面工件加工
公开(公告)号：US20070137679A1
公开(公告)日：2007-06-21
申请号：US11678931
申请日：2007-02-26
申请人： Jason Rye , Kyle Hanson
发明人： Jason Rye , Kyle Hanson
IPC分类号： B08B3/00
CPC分类号： H01L21/6719 , C25D17/001 , C25D17/06 , H01L21/67051 , H01L21/67748 , H01L21/67751
摘要： A centrifugal workpiece processor for processing semiconductor wafers and similar workpieces includes a head which holds and spins the workpiece. The head includes a rotor having a gas system. Gas is sprayed or jetted from inlets in the rotor to create a rotational gas flow. The rotational gas flow causes pressure conditions which hold the edges of a first side of the workpiece against contact pins or surfaces on the rotor. The rotor and the workpiece rotate together. Guide pins adjacent to a perimeter may help to align the workpiece with the rotor. An angled surface helps to deflect spent process liquid away from the workpiece. The head is moveable into multiple different engagement positions with a bowl. Spray nozzles in the bowl spray a process liquid onto the second side of the workpiece, as the workpiece is spinning, to process the workpiece. A moving end point detector may be used to detect an end point of processing.
摘要翻译：用于处理半导体晶片和类似工件的离心工件处理器包括保持和旋转工件的头部。头包括具有气体系统的转子。气体从转子中的入口喷射或喷射以产生旋转气流。旋转气流导致压力条件，其保持工件的第一面的边缘抵靠转子上的接触销或表面。转子和工件一起旋转。与周边相邻的导销可能有助于将工件与转子对准。有角度的表面有助于将废工艺液体偏离工件。头部可以与碗一起移动到多个不同的接合位置。当工件旋转时，碗中的喷嘴将工艺液体喷射到工件的第二面上，以处理工件。可以使用移动端点检测器来检测处理的终点。

7. 发明申请

US20070068820A1 Electrolytic copper process using anion permeable barrier 有权
标题翻译：电解铜工艺采用阴离子渗透屏障
公开(公告)号：US20070068820A1
公开(公告)日：2007-03-29
申请号：US11416659
申请日：2006-05-03
申请人： Rajesh Baskaran , Robert Batz , Bioh Kim , Tom Ritzdorf , John Klocke , Kyle Hanson
发明人： Rajesh Baskaran , Robert Batz , Bioh Kim , Tom Ritzdorf , John Klocke , Kyle Hanson
IPC分类号： C25D21/06
CPC分类号： C25D7/123 , C25D3/02 , C25D3/38 , C25D5/022 , C25D17/001 , C25D17/002 , C25F3/02 , C25F7/00 , H01L21/2885 , H01L21/76843 , H01L21/76846 , H01L21/76868 , H01L21/76873 , H05K3/423
摘要： Processes and systems for electrolytically processing a microfeature workpiece with a first processing fluid and an anode are described. Microfeature workpieces are electrolytically processed using a first processing fluid, an anode, a second processing fluid, and an anion permeable barrier layer. The anion permeable barrier layer separates the first processing fluid from the second processing fluid while allowing certain anionic species to transfer between the two fluids. The described processes produce deposits over repeated plating cycles that exhibit resistivity values within desired ranges.
摘要翻译：描述了利用第一处理流体和阳极电解处理微特征工件的工艺和系统。使用第一处理流体，阳极，第二处理流体和阴离子可渗透阻挡层对微特征工件进行电解处理。阴离子可渗透阻挡层将第一处理流体与第二处理流体分离，同时允许某些阴离子物质在两种流体之间转移。所描述的过程在反复电镀循环中产生沉积物，其在所期望的范围内显示电阻率值。

8. 发明申请

US20060189129A1 Method for applying metal features onto barrier layers using ion permeable barriers 审中-公开
标题翻译：使用离子渗透屏障将金属特征施加到阻挡层上的方法
公开(公告)号：US20060189129A1
公开(公告)日：2006-08-24
申请号：US11413228
申请日：2006-04-28
申请人： Rajesh Baskaran , Bioh Kim , Robert Batz , Tom Ritzdorf , John Klocke , Kyle Hanson
发明人： Rajesh Baskaran , Bioh Kim , Robert Batz , Tom Ritzdorf , John Klocke , Kyle Hanson
IPC分类号： C25D5/34 , H01L21/44
CPC分类号： C25D3/02 , C25D5/38 , C25D5/54 , C25D7/123 , C25D17/00 , C25D17/001 , C25D17/002 , H01L21/288 , H01L21/2885 , H01L21/321 , H01L21/76843 , H01L21/76861 , H01L21/76873 , H01L21/76877 , H01L21/76883 , H01L21/76885
摘要： The methods described are directed to processes for producing structures containing metallized features for use in microelectronic workpieces. The processes treat a barrier layer to promote the adhesion between the barrier layer and the metallized feature. Suitable means for promoting adhesion between barrier layers and metallized features include an acid treatment of the barrier layer, an electrolytic treatment of the barrier layer, or deposition of a bonding layer between the barrier layer and metallized feature. The processes described modify an exterior surface of a barrier layer making it more suitable for electrodeposition of metal on a barrier, thus eliminating the need for a PVD or CVD seed layer deposition process. According to the processes described metallized features are formed on the treated barrier layers using processes that employ ion permeable barriers.
摘要翻译：所描述的方法涉及用于生产用于微电子工件的包含金属化特征的结构的方法。该方法处理阻挡层以促进阻挡层和金属化特征之间的粘附。用于促进阻挡层和金属化特征之间的粘合的合适方式包括阻挡层的酸处理，阻挡层的电解处理，或阻挡层和金属化特征之间的结合层的沉积。所描述的方法改变了阻挡层的外表面，使得其更适合于在屏障上电沉积金属，因此不需要PVD或CVD种子层沉积工艺。根据所述方法，使用采用离子可渗透屏障的方法在经处理的阻挡层上形成金属化特征。

9. 发明申请

US20050205409A1 Apparatus and methods for electrochemical processing of microelectronic workpieces 审中-公开
标题翻译：微电子工件电化学处理的装置和方法
公开(公告)号：US20050205409A1
公开(公告)日：2005-09-22
申请号：US11096965
申请日：2005-03-29
申请人： Kyle Hanson , Thomas Ritzdorf , Gregory Wilson , Paul McHugh
发明人： Kyle Hanson , Thomas Ritzdorf , Gregory Wilson , Paul McHugh
IPC分类号： C25D7/12 , C10B1/00 , C25C7/00 , C25D3/00 , C25D5/00 , C25D17/00 , C25D21/00 , H01L21/00
CPC分类号： H01L21/6719 , C25D7/123 , C25D17/001 , H01L21/67103 , H01L21/6723
摘要： An apparatus and method for electrochemical processing of microelectronic workpieces in a reaction vessel. In one embodiment, the reaction vessel includes: an outer container having an outer wall; a distributor coupled to the outer container, the distributor having a first outlet configured to introduce a primary flow into the outer container and at least one second outlet configured to introduce a secondary flow into the outer container separate from the primary flow; a primary flow guide in the outer container coupled to the distributor to receive the primary flow from the first outlet and direct it to a workpiece processing site; a dielectric field shaping unit in the outer container coupled to the distributor to receive the secondary flow from the second outlet, the field shaping unit being configured to contain the secondary flow separate from the primary flow through at least a portion of the outer container, and the field shaping unit having at least one electrode compartment through which the secondary flow can pass while the secondary flow is separate from the primary flow; an electrode in the electrode compartment; and an interface member carried by the field shaping unit downstream from the electrode, the interface member being in fluid communication with the secondary flow in the electrode compartment, and the interface member being configured to prevent selected matter of the secondary flow from passing to the primary flow.
摘要翻译：用于反应容器中微电子工件的电化学处理的装置和方法。在一个实施例中，反应容器包括：具有外壁的外容器; 分配器，其耦合到所述外部容器，所述分配器具有构造成将主流引入所述外部容器中的第一出口和构造成将二次流引导到与所述主流分离的所述外部容器中的至少一个第二出口; 外部容器中的主要流动引导件联接到分配器以接收来自第一出口的主流并将其引导到工件加工位置; 所述外容器中的电介质场成形单元联接到所述分配器以接收来自所述第二出口的二次流，所述场整形单元构造成容纳所述次流与所述主流分离通过所述外容器的至少一部分，以及所述场成形单元具有至少一个电极室，所述二次流可以通过所述至少一个电极室，而所述二次流与所述主流分离; 电极室中的电极; 以及由所述场成形单元承载在所述电极的下游的界面构件，所述界面构件与所述电极室中的所述次流体流体连通，并且所述界面构件被构造成防止所述二次流的选定物质通过所述主流流。

10. 发明申请

US20050109629A1 System for electrochemically processing a workpiece 审中-公开
公开(公告)号：US20050109629A1
公开(公告)日：2005-05-26
申请号：US10975843
申请日：2004-10-28
申请人： Gregory Wilson , Paul McHugh , Kyle Hanson
发明人： Gregory Wilson , Paul McHugh , Kyle Hanson
IPC分类号： C25D7/12 , B05C3/00 , B05C3/20 , B23H3/00 , C02F20060101 , C25B9/00 , C25C7/00 , C25D3/02 , C25D5/00 , C25D5/04 , C25D5/08 , C25D7/00 , C25D11/32 , C25D17/00 , C25D17/02 , C25D17/12 , C25D21/00
CPC分类号： C25D17/02 , C25D5/08 , C25D17/001 , Y10S204/07
摘要： A reactor for electrochemically processing at least one surface of a microelectronic workpiece is set forth. The reactor comprises a reactor head including a workpiece support that has one or more electrical contacts positioned to make electrical contact with the microelectronic workpiece. The reactor also includes a processing container having a plurality of nozzles angularly disposed in a sidewall of a principal fluid flow chamber at a level within the principal fluid flow chamber below a surface of a bath of processing fluid normally contained therein during electrochemical processing. A plurality of anodes are disposed at different elevations in the principal fluid flow chamber so as to place them at difference distances from a microelectronic workpiece under process without an intermediate diffuser between the plurality of anodes and the microelectronic workpiece under process. One or more of the plurality of anodes may be in close proximity to the workpiece under process. Still further, one or more of the plurality of anodes may be a virtual anode. The present invention also related to multi-level anode configurations within a principal fluid flow chamber and methods of using the same.

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