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1. 发明授权

US08487325B2 Light emitting diode with large viewing angle and fabricating method thereof 有权
标题翻译：具有大视角的发光二极管及其制造方法
公开(公告)号：US08487325B2
公开(公告)日：2013-07-16
申请号：US13351648
申请日：2012-01-17
申请人： Chen-Yen Lin , Yung-Ming Lin , Po-Chun Yeh , Jeng-Wei Yu , Chih-Ming Lai , Lung-Han Peng
发明人： Chen-Yen Lin , Yung-Ming Lin , Po-Chun Yeh , Jeng-Wei Yu , Chih-Ming Lai , Lung-Han Peng
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/20 , H01L33/0012 , H01L33/0062 , H01L2224/45139 , H01L2224/48091 , H01L2924/00014 , H01L2924/00
摘要： A light emitting diode includes a substrate, a plurality of pillar structures, a filler structure, a transparent conductive layer, a first electrode, and a second electrode. These pillar structures are formed on the substrate. Each of the pillar structures includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first type semiconductor layers are formed on the substrate. The pillar structures are electrically connected with each other through the first type semiconductor layers. The filler structure is formed between the pillar structures. The filler structure and the second type semiconductor layers of the pillar structures are covered with the transparent conductive layer. The first electrode is in contact with the transparent conductive layer. The second electrode is in contact with the first type semiconductor layer.
摘要翻译：发光二极管包括基板，多个柱结构，填充结构，透明导电层，第一电极和第二电极。这些柱结构形成在基板上。每个柱结构包括第一类型半导体层，有源层和第二类型半导体层。在基板上形成第一类型的半导体层。柱结构通过第一类型半导体层彼此电连接。填料结构形成在柱结构之间。柱结构的填充结构和第二类型半导体层被透明导电层覆盖。第一电极与透明导电层接触。第二电极与第一类型半导体层接触。

2. 发明申请

US20120228655A1 LIGHT EMITTING DIODE WITH LARGE VIEWING ANGLE AND FABRICATING METHOD THEREOF 有权
标题翻译：具有大角度角度的发光二极管及其制造方法
公开(公告)号：US20120228655A1
公开(公告)日：2012-09-13
申请号：US13351648
申请日：2012-01-17
申请人： Chen-Yen Lin , Yung-Ming Lin , Po-Chun Yeh , Jeng-Wei Yu , Chih-Ming Lai , Lung-Han Peng
发明人： Chen-Yen Lin , Yung-Ming Lin , Po-Chun Yeh , Jeng-Wei Yu , Chih-Ming Lai , Lung-Han Peng
IPC分类号： H01L33/58 , H01L33/42
CPC分类号： H01L33/20 , H01L33/0012 , H01L33/0062 , H01L2224/45139 , H01L2224/48091 , H01L2924/00014 , H01L2924/00
摘要： A light emitting diode includes a substrate, a plurality of pillar structures, a filler structure, a transparent conductive layer, a first electrode, and a second electrode. These pillar structures are formed on the substrate. Each of the pillar structures includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first type semiconductor layers are formed on the substrate. The pillar structures are electrically connected with each other through the first type semiconductor layers. The filler structure is formed between the pillar structures. The filler structure and the second type semiconductor layers of the pillar structures are covered with the transparent conductive layer. The first electrode is in contact with the transparent conductive layer. The second electrode is in contact with the first type semiconductor layer.
摘要翻译：发光二极管包括基板，多个柱结构，填充结构，透明导电层，第一电极和第二电极。这些柱结构形成在基板上。每个柱结构包括第一类型半导体层，有源层和第二类型半导体层。在基板上形成第一类型的半导体层。柱结构通过第一类型半导体层彼此电连接。填料结构形成在柱结构之间。柱结构的填充结构和第二类型半导体层被透明导电层覆盖。第一电极与透明导电层接触。第二电极与第一类型半导体层接触。

3. 发明授权

US08481353B2 Method of separating nitride films from the growth substrates by selective photo-enhanced wet oxidation 有权
标题翻译：通过选择性光增强湿氧化从生长衬底分离氮化膜的方法
公开(公告)号：US08481353B2
公开(公告)日：2013-07-09
申请号：US13086787
申请日：2011-04-14
申请人： Lung-Han Peng , Jeng-Wei Yu , Po-Chun Yeh
发明人： Lung-Han Peng , Jeng-Wei Yu , Po-Chun Yeh
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L21/268 , H01L33/32
摘要： Various embodiments of the present disclosure pertain to separating nitride films from growth substrates by selective photo-enhanced wet oxidation. In one aspect, a method may transform a portion of a III-nitride structure that bonds with a first substrate structure into a III-oxide layer by selective photo-enhanced wet oxidation. The method may further separate the first substrate structure from the III-nitride structure.
摘要翻译：本公开的各种实施例涉及通过选择性光增强湿氧化从生长衬底分离氮化物膜。在一个方面，一种方法可以通过选择性光增强湿氧化将与第一衬底结构结合的III族氮化物结构的一部分转变为III氧化物层。该方法还可以将第一衬底结构与III族氮化物结构分开。

4. 发明申请

US20120264247A1 Method of Separating Nitride Films from the Growth Substrates by Selective Photo-Enhanced Wet Oxidation 有权
标题翻译：通过选择性光增强湿氧化从生长底物分离氮化物膜的方法
公开(公告)号：US20120264247A1
公开(公告)日：2012-10-18
申请号：US13086787
申请日：2011-04-14
申请人： Lung-Han Peng , Jeng-Wei Yu , Po-Chun Yeh
发明人： Lung-Han Peng , Jeng-Wei Yu , Po-Chun Yeh
IPC分类号： H01L33/32 , H01L21/268
CPC分类号： H01L33/0079 , H01L21/268 , H01L33/32
摘要： Various embodiments of the present disclosure pertain to separating nitride films from growth substrates by selective photo-enhanced wet oxidation. In one aspect, a method may transform a portion of a III-nitride structure that bonds with a first substrate structure into a III-oxide layer by selective photo-enhanced wet oxidation. The method may further separate the first substrate structure from the III-nitride structure.
摘要翻译：本公开的各种实施方案涉及通过选择性光增强湿氧化从生长衬底分离氮化物膜。在一个方面，一种方法可以通过选择性光增强湿氧化将与第一衬底结构结合的III族氮化物结构的一部分转变为III氧化物层。该方法还可以将第一衬底结构与III族氮化物结构分开。

5. 发明授权

US08409892B2 Method of selective photo-enhanced wet oxidation for nitride layer regrowth on substrates 有权
标题翻译：选择性光增强湿法氧化氮化层再生长在衬底上的方法
公开(公告)号：US08409892B2
公开(公告)日：2013-04-02
申请号：US13086663
申请日：2011-04-14
申请人： Lung-Han Peng , Jeng-Wei Yu , Po-Chun Yeh
发明人： Lung-Han Peng , Jeng-Wei Yu , Po-Chun Yeh
IPC分类号： H01L21/00
CPC分类号： H01L33/32 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02603 , H01L21/02639 , H01L33/007 , H01L33/06
摘要： Various embodiments of the present disclosure pertain to selective photo-enhanced wet oxidation for nitride layer regrowth on substrates. In one aspect, a method may comprise: forming a first III-nitride layer with a first low bandgap energy on a first surface of a substrate; forming a second III-nitride layer with a first high bandgap energy on the first III-nitride layer; transforming portions of the first III-nitride layer into a plurality of III-oxide stripes by photo-enhanced wet oxidation; forming a plurality of III-nitride nanowires with a second low bandgap energy on the second III-nitride layer between the III-oxide stripes; and selectively transforming at least some of the III-nitride nanowires into III-oxide nanowires by selective photo-enhanced oxidation.
摘要翻译：本公开的各种实施方案涉及对衬底上的氮化物层再生长的选择性光增强湿氧化。一方面，一种方法可以包括：在衬底的第一表面上形成具有第一低带隙能的第一III族氮化物层; 在所述第一III族氮化物层上形成具有第一高带隙能的第二III族氮化物层; 通过光增强湿氧化将第一III-氮化物层的部分转变成多个III-氧化物条; 在所述III氧化物条之间的所述第二III族氮化物层上形成具有第二低带隙能量的多个III族氮化物纳米线; 并且通过选择性光增强氧化将至少一些III族氮化物纳米线选择性地转化为III族氧化物纳米线。

6. 发明申请

US20120264246A1 Method of Selective Photo-Enhanced Wet Oxidation for Nitride Layer Regrowth on Substrates 有权
标题翻译：选择性光增强湿氧化氮化层在基板上再生的方法
公开(公告)号：US20120264246A1
公开(公告)日：2012-10-18
申请号：US13086663
申请日：2011-04-14
申请人： Lung-Han Peng , Jeng-Wei Yu , Po-Chun Yeh
发明人： Lung-Han Peng , Jeng-Wei Yu , Po-Chun Yeh
IPC分类号： H01L31/18 , H01L21/205
CPC分类号： H01L33/32 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02603 , H01L21/02639 , H01L33/007 , H01L33/06
摘要： Various embodiments of the present disclosure pertain to selective photo-enhanced wet oxidation for nitride layer regrowth on substrates. In one aspect, a method may comprise: forming a first III-nitride layer with a first low bandgap energy on a first surface of a substrate; forming a second III-nitride layer with a first high bandgap energy on the first III-nitride layer; transforming portions of the first III-nitride layer into a plurality of III-oxide stripes by photo-enhanced wet oxidation; forming a plurality of III-nitride nanowires with a second low bandgap energy on the second III-nitride layer between the III-oxide stripes; and selectively transforming at least some of the III-nitride nanowires into III-oxide nanowires by selective photo-enhanced oxidation.
摘要翻译：本公开的各种实施方案涉及对衬底上的氮化物层再生长的选择性光增强湿氧化。一方面，一种方法可以包括：在衬底的第一表面上形成具有第一低带隙能的第一III族氮化物层; 在所述第一III族氮化物层上形成具有第一高带隙能的第二III族氮化物层; 通过光增强湿氧化将第一III-氮化物层的部分转变成多个III-氧化物条; 在所述III氧化物条之间的所述第二III族氮化物层上形成具有第二低带隙能量的多个III族氮化物纳米线; 并且通过选择性光增强氧化将至少一些III族氮化物纳米线选择性地转化为III族氧化物纳米线。

7. 发明授权

US08981373B1 White LED 有权
标题翻译：白色LED
公开(公告)号：US08981373B1
公开(公告)日：2015-03-17
申请号：US14146097
申请日：2014-01-02
申请人： Lung-Han Peng , Yao-Te Wang , Po-Chun Yeh , Po-Ting Lee
发明人： Lung-Han Peng , Yao-Te Wang , Po-Chun Yeh , Po-Ting Lee
IPC分类号： H01L21/02 , H01L33/08 , H01L33/28 , H01L33/32 , H01L33/34
CPC分类号： H01L33/08 , H01L33/26 , H01L33/32
摘要： A white LED is provided. The white LED includes a P-type layer, a tunneling structure, an N-type layer, an N-type electrode, and a P-type electrode. The tunneling structure is disposed over the P-type layer. The tunneling structure includes a first barrier layer, an active layer and a second barrier layer. The first barrier layer includes a first metal oxide layer. The active layer includes a second metal oxide layer. The second barrier layer includes a third metal oxide layer. The N-type layer is disposed over the tunneling structure. The N-type electrode and the P-type electrode are respectively contacted with the N-type layer and the P-type layer. An energy gap of the second metal oxide layer is lower than an energy gap of the first metal oxide layer and is lower than an energy gap of the third metal oxide layer.
摘要翻译：提供白色LED。白色LED包括P型层，隧道结构，N型层，N型电极和P型电极。隧道结构设置在P型层上。隧道结构包括第一阻挡层，有源层和第二阻挡层。第一阻挡层包括第一金属氧化物层。有源层包括第二金属氧化物层。第二阻挡层包括第三金属氧化物层。 N型层设置在隧道结构之上。 N型电极和P型电极分别与N型层和P型层接触。第二金属氧化物层的能隙低于第一金属氧化物层的能隙，并且低于第三金属氧化物层的能隙。

8. 发明申请

US20150090999A1 WHITE LED 有权
标题翻译：白色LED
公开(公告)号：US20150090999A1
公开(公告)日：2015-04-02
申请号：US14146097
申请日：2014-01-02
申请人： Lung-Han Peng , Yao-Te Wang , Po-Chun Yeh , Po-Ting Lee
发明人： Lung-Han Peng , Yao-Te Wang , Po-Chun Yeh , Po-Ting Lee
IPC分类号： H01L33/08 , H01L33/32 , H01L33/34 , H01L33/28
CPC分类号： H01L33/08 , H01L33/26 , H01L33/32
摘要： A white LED is provided. The white LED includes a P-type layer, a tunneling structure, an N-type layer, an N-type electrode, and a P-type electrode. The tunneling structure is disposed over the P-type layer. The tunneling structure includes a first barrier layer, an active layer and a second barrier layer. The first barrier layer includes a first metal oxide layer. The active layer includes a second metal oxide layer. The second barrier layer includes a third metal oxide layer. The N-type layer is disposed over the tunneling structure. The N-type electrode and the P-type electrode are respectively contacted with the N-type layer and the P-type layer. An energy gap of the second metal oxide layer is lower than an energy gap of the first metal oxide layer and is lower than an energy gap of the third metal oxide layer.
摘要翻译：提供白色LED。白色LED包括P型层，隧道结构，N型层，N型电极和P型电极。隧道结构设置在P型层上。隧道结构包括第一阻挡层，有源层和第二阻挡层。第一阻挡层包括第一金属氧化物层。有源层包括第二金属氧化物层。第二阻挡层包括第三金属氧化物层。 N型层设置在隧道结构之上。 N型电极和P型电极分别与N型层和P型层接触。第二金属氧化物层的能隙低于第一金属氧化物层的能隙，并且低于第三金属氧化物层的能隙。

9. 发明授权

US07253061B2 Method of forming a gate insulator in group III-V nitride semiconductor devices 有权
标题翻译：在III-V族氮化物半导体器件中形成栅极绝缘体的方法
公开(公告)号：US07253061B2
公开(公告)日：2007-08-07
申请号：US11005193
申请日：2004-12-06
申请人： Lung-Han Peng , Han-Ming Wu , Jing-Yi Lin
发明人： Lung-Han Peng , Han-Ming Wu , Jing-Yi Lin
IPC分类号： H01L21/336
CPC分类号： H01L21/02241 , H01L21/02258 , H01L21/02337 , H01L21/3143 , H01L21/31679 , H01L29/78681
摘要： A method of forming a gate insulator in the manufacture of a semiconductor device comprises conducting a photo-assisted electrochemical process to form a gate-insulating layer on a gallium nitride layer of the semiconductor device, wherein the gate-insulating layer includes gallium oxynitride and gallium oxide, and performing a rapid thermal annealing process. The photo-assisted electrochemical process uses an electrolyte bath including buffered CH3COOH at a pH between about 5.5 and 7.5. The rapid thermal annealing process is conducted in O2 environment at a temperature between about 500° C. and 800° C.
摘要翻译：在制造半导体器件中形成栅极绝缘体的方法包括进行光辅助电化学处理以在半导体器件的氮化镓层上形成栅极绝缘层，其中栅极绝缘层包括氮氧化镓和镓并进行快速热退火处理。光辅助电化学方法在约5.5和7.5之间的pH下使用包括缓冲CH 3 COOH的电解质浴。快速热退火工艺在O 2 O 2环境中在约500℃至800℃的温度下进行。

10. 发明授权

US06190508B1 Method of oxidizing nitride material enhanced by illumination with UV light at room temperature 失效
标题翻译：通过在室温下用紫外光照射而增强氮化物材料的方法
公开(公告)号：US06190508B1
公开(公告)日：2001-02-20
申请号：US09287326
申请日：1999-04-07
申请人： Lung-Han Peng , Yi-Chien Hsu , Chin-Yuan Chen , Jin-Kuo Ho , Chao-Nien Huang
发明人： Lung-Han Peng , Yi-Chien Hsu , Chin-Yuan Chen , Jin-Kuo Ho , Chao-Nien Huang
IPC分类号： C01B2100
CPC分类号： C01G1/02 , C01B13/324 , C01P2002/72
摘要： A method of forming oxide from nitride, in which the oxidation is enhanced by illuminating the nitride material with UV light. This method produces a rapid growth of oxide and allows for the monitoring of the oxide thickness in situ. The method comprises the steps of (i) placing the nitride material on an illuminating holder; (ii) dipping the nitride material and the illuminating holder in an electrolyte; and (iii) illuminating the nitride material with a light having an energy larger than the energy gap of the nitride material. The nitride material can be connected to a conductive electrode located in the electrolyte via a galvanometer to monitor a photo current generated by the oxidation of the nitride material so as to monitor the thickness of the oxide formed on the nitride material in situ. A metal coating can be coated on the nitride material to define the oxide forming region. The pH value of the electrolyte is in a range of approximately 3 to 10, and is preferably about 3.5.
摘要翻译：从氮化物形成氧化物的方法，其中通过用UV光照射氮化物材料来增强氧化。该方法产生氧化物的快速生长，并允许原位监测氧化物厚度。该方法包括以下步骤：（i）将氮化物材料放置在照明保持器上; （ii）将氮化物材料和照明保持器浸入电解质中; 和（iii）用能量大于氮化物材料的能隙的光来照射氮化物材料。氮化物材料可以经由电流计连接到位于电解质中的导电电极，以监测由氮化物材料的氧化产生的光电流，以便现场监测在氮化物材料上形成的氧化物的厚度。可以在氮化物材料上涂覆金属涂层以限定氧化物形成区域。电解液的pH值在约3〜10的范围内，优选为3.5左右。

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