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1. 发明申请

US20050255244A1 Lifting glass substrate without center lift pins 审中-公开
标题翻译：提升玻璃基板，无中心升降针
公开(公告)号：US20050255244A1
公开(公告)日：2005-11-17
申请号：US11188375
申请日：2005-07-25
申请人： Li Hou , Quanyuan Shang , Robert Greene
发明人： Li Hou , Quanyuan Shang , Robert Greene
IPC分类号： H01L21/687 , C23C16/00 , H05H1/24
CPC分类号： H01L21/68742 , H01L21/68778
摘要： A method for lifting a substrate from a susceptor. A plurality of lift pins is configured so that they support the substrate without contacting a central portion of the substrate. The processed substrate has a first dimension that is at least 500 millimeters and a second dimension that is at least 500 millimeters. Each lift pin in the plurality of lift pins is configured so that it supports the substrate from a point that is at least 120 millimeters from a center of the substrate. The plurality of lift pins is configured so that each side of the susceptor is supported by at least three lift pins. In some embodiments, a support member overlies at least a subset of the plurality of lift pins.
摘要翻译：一种用于从基座提起基板的方法。多个提升销构造成使得它们支撑基板而不接触基板的中心部分。经处理的基底具有至少500毫米的第一尺寸和至少500毫米的第二尺寸。多个提升销中的每个提升销被构造成使得其从距衬底的中心至少120毫米的点支撑衬底。多个提升销构造成使得基座的每侧由至少三个提升销支撑。在一些实施例中，支撑构件覆盖多个提升销的至少一个子集。

2. 发明申请

US20050150459A1 Full glass substrate deposition in plasma enhanced chemical vapor deposition 审中-公开
标题翻译：全玻璃基板沉积在等离子体中增强化学气相沉积
公开(公告)号：US20050150459A1
公开(公告)日：2005-07-14
申请号：US11010956
申请日：2004-12-13
申请人： Quanyuan Shang , Robert Greene , Li Hou
发明人： Quanyuan Shang , Robert Greene , Li Hou
IPC分类号： C23C16/458 , C23C16/46 , H01J37/32 , C23C16/00
CPC分类号： C23C16/46 , C23C16/4581 , H01J2237/0206 , H01J2237/20
摘要： Embodiments of the invention generally provides an apparatus and a method for minimizing the deformation of a substrate during PECVD processing. In one aspect, the substrate is supported within a processing region on an insulating layer to provide uniform heating of the substrate.
摘要翻译：本发明的实施例通常提供一种用于在PECVD处理期间最小化衬底的变形的装置和方法。在一个方面，衬底被支撑在绝缘层上的处理区域内以提供衬底的均匀加热。

3. 发明授权

US06942753B2 Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition 有权
标题翻译：用于大面积等离子体增强化学气相沉积的气体分配板组件
公开(公告)号：US06942753B2
公开(公告)日：2005-09-13
申请号：US10417592
申请日：2003-04-16
申请人： Soo Young Choi , Quanyuan Shang , Robert I. Greene , Li Hou
发明人： Soo Young Choi , Quanyuan Shang , Robert I. Greene , Li Hou
IPC分类号： C23C16/44 , C23C16/455 , C23C16/509 , C23C16/00 , C23C16/452 , C23F1/00 , H01L21/00
CPC分类号： C23C16/45565 , C23C16/5096
摘要： Embodiments of a gas distribution plate for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution plate includes a diffuser plate having a plurality of gas passages passing between an upstream side and a downstream side of the diffuser plate. At least one of the gas passages includes a first hole and a second hole coupled by an orifice hole. The first hole extends from the upstream side of the diffuser plate while the second hole extends from the downstream side. The orifice hole has a diameter less than the respective diameters of the first and second holes.
摘要翻译：提供了用于在处理室中分配气体的气体分配板的实施例。在一个实施例中，气体分配板包括具有通过扩散板的上游侧和下游侧之间的多个气体通道的扩散板。至少一个气体通道包括第一孔和通过孔口联接的第二孔。第一孔从扩散板的上游侧延伸，而第二孔从下游侧延伸。孔口的直径小于第一孔和第二孔的直径。

4. 发明授权

US07561258B2 Wafer tilt detection apparatus and method 失效
标题翻译：晶圆倾斜检测装置及方法
公开(公告)号：US07561258B2
公开(公告)日：2009-07-14
申请号：US11749611
申请日：2007-05-16
申请人： Songlin Xu , Li Hou , Stephen Hyatt
发明人： Songlin Xu , Li Hou , Stephen Hyatt
IPC分类号： H01L21/66 , G01J3/443
CPC分类号： H01L22/26
摘要： An exemplary embodiment providing one or more improvements includes a wafer tilt detection apparatus for use with a wafer processing or manufacturing device that applies a process to the wafer and which utilizes an endpoint signal for determining control of the process applied to the wafer. The wafer tilt apparatus uses the endpoint signal in establishing when the wafer was in a tilted orientation during processing.
摘要翻译：提供一个或多个改进的示例性实施例包括与晶片处理或制造装置一起使用的晶片倾斜检测装置，该晶片处理或制造装置向晶片施加过程，并且利用端点信号来确定施加到晶片的工艺的控制。晶片倾斜装置在处理期间当晶片处于倾斜取向时，使用端点信号建立。

5. 发明申请

US20060228490A1 Gas distribution uniformity improvement by baffle plate with multi-size holes for large size PECVD systems 审中-公开
标题翻译：用于大尺寸PECVD系统的具有多尺寸孔的挡板的气体分布均匀性改善
公开(公告)号：US20060228490A1
公开(公告)日：2006-10-12
申请号：US11101305
申请日：2005-04-07
申请人： Qunhua Wang , Li Hou , Sanjay Yadav , Gaku Furuta , Kenji Omori , Soo Choi , John White
发明人： Qunhua Wang , Li Hou , Sanjay Yadav , Gaku Furuta , Kenji Omori , Soo Choi , John White
IPC分类号： C23F1/00 , B01J19/08 , C23C16/00 , H01L21/306
CPC分类号： H01J37/3244 , C23C16/45565 , C23F4/00 , H01J37/32449
摘要： Embodiments of a gas distribution plate for distributing gas in a processing chamber for large area substrates are provided. The embodiments describe a gas distribution plate assembly for a plasma processing chamber having a cover plate comprises a diffuser plate having an upstream side, a downstream side facing a processing region, and a plurality of gas passages formed through the diffuser plate, and a baffle plate, placed between the cover plate of the process chamber and the diffuser plate, having a plurality of holes extending from the upper surface to the lower surface of the baffle plate, wherein the plurality of holes have at least two sizes. The small pinholes of the baffle plate are used to allow sufficient pass-through of gas mixture, while the large holes of the baffle plate are used to improve the process uniformity across the substrate.
摘要翻译：提供了用于在大面积基板的处理室中分配气体的气体分配板的实施例。实施方式描述了一种用于等离子体处理室的气体分配板组件，其具有盖板，该盖板包括具有上游侧，面向加工区域的下游侧和通过扩散板形成的多个气体通道的扩散板，以及挡板，放置在处理室的盖板和扩散板之间，具有从挡板的上表面延伸到下表面的多个孔，其中多个孔具有至少两个尺寸。挡板的小针孔用于允许气体混合物的充分通过，而挡板的大孔用于改善基板上的工艺均匀性。

6. 发明申请

US20080178807A1 GAS DISTRIBUTION UNIFORMITY IMPROVEMENT BY BAFFLE PLATE WITH MULTI-SIZE HOLES FOR LARGE SIZE PECVD SYSTEMS 审中-公开
标题翻译：气体分布均匀度改进由具有多个尺寸PECVD系统的多尺寸孔板
公开(公告)号：US20080178807A1
公开(公告)日：2008-07-31
申请号：US12099112
申请日：2008-04-07
申请人： Qunhua Wang , Li Hou , Sanjay Yadav , Gaku Furuta , Kenji Omori , Soo Young Choi , John M. White
发明人： Qunhua Wang , Li Hou , Sanjay Yadav , Gaku Furuta , Kenji Omori , Soo Young Choi , John M. White
IPC分类号： C23C16/00
CPC分类号： H01J37/3244 , C23C16/45565 , C23F4/00 , H01J37/32449
摘要： Embodiments of a gas distribution plate for distributing gas in a processing chamber for large area substrates are provided. The embodiments describe a gas distribution plate assembly for a plasma processing chamber having a cover plate comprises a diffuser plate having an upstream side, a downstream side facing a processing region, and a plurality of gas passages formed through the diffuser plate, and a baffle plate, placed between the cover plate of the process chamber and the diffuser plate, having a plurality of holes extending from the upper surface to the lower surface of the baffle plate, wherein the plurality of holes have at least two sizes. The small pinholes of the baffle plate are used to allow sufficient pass-through of gas mixture, while the large holes of the baffle plate are used to improve the process uniformity across the substrate.
摘要翻译：提供了用于在大面积基板的处理室中分配气体的气体分配板的实施例。实施方式描述了一种用于等离子体处理室的气体分配板组件，其具有盖板，该盖板包括具有上游侧，面向加工区域的下游侧和通过扩散板形成的多个气体通道的扩散板，以及挡板，放置在处理室的盖板和扩散板之间，具有从挡板的上表面延伸到下表面的多个孔，其中多个孔具有至少两个尺寸。挡板的小针孔用于允许气体混合物的充分通过，而挡板的大孔用于改善基板上的工艺均匀性。

7. 发明申请

US20050251990A1 Plasma uniformity control by gas diffuser hole design 有权
标题翻译：通过气体扩散器孔设计的等离子体均匀性控制
公开(公告)号：US20050251990A1
公开(公告)日：2005-11-17
申请号：US10889683
申请日：2004-07-12
申请人： Soo Young Choi , John White , Qunhua Wang , Li Hou , Ki Kim , Shinichi Kurita , Tae Won , Suhail Anwar , Beom Park , Robin Tiner
发明人： Soo Young Choi , John White , Qunhua Wang , Li Hou , Ki Kim , Shinichi Kurita , Tae Won , Suhail Anwar , Beom Park , Robin Tiner
IPC分类号： H01L21/02 , C23C16/00 , C23C16/34 , C23C16/44 , C23C16/455 , C23C16/505 , C23C16/509 , C23F1/00 , H01J37/32 , H01L21/205
CPC分类号： H01J37/3244 , C23C16/345 , C23C16/455 , C23C16/45565 , C23C16/5096 , H01J37/32082 , H01J37/32091 , H01J37/32541 , H01J37/32596 , H01J2237/327 , H01J2237/3321 , H01J2237/3323 , H01J2237/3325 , Y10T29/49885 , Y10T29/49996
摘要： Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.
摘要翻译：提供了用于在处理室中分配气体的气体扩散板的实施例。气体分配板包括具有上游侧和下游侧的扩散板，以及在扩散板的上游侧和下游侧之间通过的多个气体通路。气体通道包括在下游侧的中空阴极腔，以增强等离子体电离。延伸到下游端的气体通道的空心阴极腔的深度，直径，表面积和密度可以从扩散板的中心到边缘逐渐增加，以改善衬底上的膜厚度和性能均匀性。从扩散板的中心到边缘的直径，深度和表面积的增加可以通过向下游侧弯曲扩散板，然后在凸出的下游侧加工出来。扩散板的弯曲可以通过热处理或真空工艺来实现。从扩散板的中心到边缘的直径，深度和表面积的增加也可以用计算机数字控制加工。具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加，深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

8. 发明授权

US09200368B2 Plasma uniformity control by gas diffuser hole design 有权
标题翻译：通过气体扩散器孔设计的等离子体均匀性控制
公开(公告)号：US09200368B2
公开(公告)日：2015-12-01
申请号：US13207227
申请日：2011-08-10
申请人： Soo Young Choi , John M. White , Qunhua Wang , Li Hou , Ki Woon Kim , Shinichi Kurita , Tae Kyung Won , Suhail Anwar , Beom Soo Park , Robin L. Tiner
发明人： Soo Young Choi , John M. White , Qunhua Wang , Li Hou , Ki Woon Kim , Shinichi Kurita , Tae Kyung Won , Suhail Anwar , Beom Soo Park , Robin L. Tiner
IPC分类号： C23C16/455 , C23C16/34 , C23C16/509 , H01J37/32
CPC分类号： H01J37/3244 , C23C16/345 , C23C16/455 , C23C16/45565 , C23C16/5096 , H01J37/32082 , H01J37/32091 , H01J37/32541 , H01J37/32596 , H01J2237/327 , H01J2237/3321 , H01J2237/3323 , H01J2237/3325 , Y10T29/49885 , Y10T29/49996
摘要： Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.
摘要翻译：提供了用于在处理室中分配气体的气体扩散板的实施例。气体分配板包括具有上游侧和下游侧的扩散板，以及在扩散板的上游侧和下游侧之间通过的多个气体通路。气体通道包括在下游侧的中空阴极腔，以增强等离子体电离。延伸到下游端的气体通道的空心阴极腔的深度，直径，表面积和密度可以从扩散板的中心到边缘逐渐增加，以改善衬底上的膜厚度和性能均匀性。从扩散板的中心到边缘的直径，深度和表面积的增加可以通过向下游侧弯曲扩散板，然后在凸出的下游侧加工出来。扩散板的弯曲可以通过热处理或真空工艺来实现。从扩散板的中心到边缘的直径，深度和表面积的增加也可以用计算机数字控制加工。具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加，深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

9. 发明申请

US20110290183A1 Plasma Uniformity Control By Gas Diffuser Hole Design 有权
标题翻译：通过气体扩散器孔设计的等离子体均匀性控制
公开(公告)号：US20110290183A1
公开(公告)日：2011-12-01
申请号：US13207227
申请日：2011-08-10
申请人： Soo Young Choi , John M. White , Qunhua Wang , Li Hou , Ki Woon Kim , Shinichi Kurita , Tae Kyung Won , Suhail Anwar , Beom Soo Park , Robin L. Tiner
发明人： Soo Young Choi , John M. White , Qunhua Wang , Li Hou , Ki Woon Kim , Shinichi Kurita , Tae Kyung Won , Suhail Anwar , Beom Soo Park , Robin L. Tiner
IPC分类号： C23C16/455
CPC分类号： H01J37/3244 , C23C16/345 , C23C16/455 , C23C16/45565 , C23C16/5096 , H01J37/32082 , H01J37/32091 , H01J37/32541 , H01J37/32596 , H01J2237/327 , H01J2237/3321 , H01J2237/3323 , H01J2237/3325 , Y10T29/49885 , Y10T29/49996
摘要： Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.
摘要翻译：提供了用于在处理室中分配气体的气体扩散板的实施例。气体分配板包括具有上游侧和下游侧的扩散板，以及在扩散板的上游侧和下游侧之间通过的多个气体通路。气体通道包括在下游侧的中空阴极腔，以增强等离子体电离。延伸到下游端的气体通道的空心阴极腔的深度，直径，表面积和密度可以从扩散板的中心到边缘逐渐增加，以改善衬底上的膜厚度和性能均匀性。从扩散板的中心到边缘的直径，深度和表面积的增加可以通过向下游侧弯曲扩散板，然后在凸出的下游侧加工出来。扩散板的弯曲可以通过热处理或真空工艺来实现。从扩散板的中心到边缘的直径，深度和表面积的增加也可以用计算机数字控制加工。具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加，深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

10. 发明授权

US08917518B2 Housing with rotation arm and panel for securing hard disk drive therein 有权
标题翻译：带旋转臂和面板的外壳，用于固定硬盘驱动器
公开(公告)号：US08917518B2
公开(公告)日：2014-12-23
申请号：US13531734
申请日：2012-06-25
申请人： Xiu-Quan Hu , Lin-Han Wu , Li Hou , Wei Wang
发明人： Xiu-Quan Hu , Lin-Han Wu , Li Hou , Wei Wang
IPC分类号： H05K5/00 , G06F1/18 , G11B33/12
CPC分类号： G11B33/124 , G06F1/187
摘要： A housing for a hard disk drive includes an enclosure defining a window in a front side thereof for providing access to install the hard disk drive in the enclosure, a rotation arm having a front end and a back end, and a panel. The back end of the rotation arm is pivotally connected to a rear end of the enclosure, and the panel is pivotally connected to the front end of the rotation arm. The rotation arm and the panel are pivotable between a locked state in which the panel covers the window of the enclosure and the rotation arm abuts a lateral side of the enclosure, and an open state in which the panel is pulled away from the enclosure to expose the window.
摘要翻译：用于硬盘驱动器的外壳包括限定其前侧的窗口的外壳，用于提供对硬盘驱动器安装在外壳中的访问，具有前端和后端的旋转臂以及面板。旋转臂的后端枢转地连接到外壳的后端，并且面板枢转地连接到旋转臂的前端。所述旋转臂和所述面板可在所述面板覆盖所述外壳的窗口并且所述旋转臂抵靠所述外壳的侧面的锁定状态和所述面板从所述外壳拉出以暴露窗户。

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