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1. 发明授权

US06729824B2 Dual robot processing system 失效
标题翻译：双机器人处理系统
公开(公告)号：US06729824B2
公开(公告)日：2004-05-04
申请号：US10017039
申请日：2001-12-14
申请人： Lawrence C. Lei , Moris Kori
发明人： Lawrence C. Lei , Moris Kori
IPC分类号： B65G4907
CPC分类号： H01L21/67184 , H01L21/67126 , H01L21/67201 , H01L21/67742 , H01L21/67745 , H01L21/67748 , Y10S414/139
摘要： A substrate processing system having a transfer chamber having two processing chambers and two load lock chambers coupled thereto is generally provided. The transfer chamber includes a body having a first transfer area and a second transfer area defined therein on either side of a center axis. A first passage couples one of the load locks with the first transfer area and a second passage couples the other one of the load locks with the second transfer area. The first passage and the second passage form an acute angle about the center axis. A transfer platform is disposed between the first transfer area and the second transfer area. A first transfer robot and a second transfer robot are disposed in the first and second transfer areas, respectively. Each robot is adapted to transfer substrates between the load locks, the transfer platform and a processing chamber.
摘要翻译：通常提供具有传送室的基板处理系统，该传送室具有两个处理室和与其连接的两个加载锁定室。传送室包括在中心轴线的任一侧上具有限定在其中的第一传送区域和第二传送区域的主体。第一通道将负载锁中的一个与第一传送区域耦合，并且第二通道将另一个负载锁与第二传送区域耦合。第一通道和第二通道围绕中心轴线形成锐角。传送平台设置在第一传送区域和第二传送区域之间。第一传送机器人和第二传送机器人分别设置在第一传送区域和第二传送区域中。每个机器人适于在负载锁，转移平台和处理室之间传送衬底。

2. 发明申请

US20090214786A1 MULTI-STATION DEPOSITION APPARATUS AND METHOD 有权
标题翻译：多站沉积装置和方法
公开(公告)号：US20090214786A1
公开(公告)日：2009-08-27
申请号：US12435950
申请日：2009-05-05
申请人： Mei Chang , Lawrence C. Lei , Walter B. Glenn
发明人： Mei Chang , Lawrence C. Lei , Walter B. Glenn
IPC分类号： C23C16/22 , C23C16/00
CPC分类号： H01L21/67167 , C23C16/45512 , C23C16/45519 , C23C16/45551 , C23C16/45565 , C23C16/4586 , C23C16/54 , H01L21/67017 , H01L21/6719
摘要： A multi-station deposition apparatus capable of simultaneous processing multiple substrates using a plurality of stations, where a gas curtain separates the stations. The apparatus further comprises a multi-station platen that supports a plurality of wafers and rotates the wafers into specific deposition positions at which deposition gases are supplied to the wafers. The deposition gases may be supplied to the wafer through single zone or multi-zone gas dispensing nozzles.
摘要翻译：一种多站沉积装置，其能够使用多个站同时处理多个基板，其中气幕将站分离。该装置还包括支撑多个晶片并将晶片旋转到特定沉积位置的多工位台板，在该沉积位置将沉积气体供应到晶片。沉积气体可以通过单区或多区气体分配喷嘴供应到晶片。

3. 发明授权

US06866746B2 Clamshell and small volume chamber with fixed substrate support 有权
标题翻译：蛤壳式和小容积室具有固定衬底支撑
公开(公告)号：US06866746B2
公开(公告)日：2005-03-15
申请号：US10302774
申请日：2002-11-21
申请人： Lawrence C. Lei , Alfred W. Mak , Gwo-Chuan Tzu , Avi Tepman , Ming Xi , Walter Benjamin Glenn
发明人： Lawrence C. Lei , Alfred W. Mak , Gwo-Chuan Tzu , Avi Tepman , Ming Xi , Walter Benjamin Glenn
IPC分类号： C23C16/44 , C23C16/455 , H01L21/00 , C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： C23C16/45565 , C23C16/4412 , C23C16/45521 , C23C16/45574 , H01L21/6719
摘要： Embodiments of the present invention generally relate to a clamshell and small volume chamber with a fixed substrate support. One embodiment of a processing chamber includes a fixed substrate support having a substrate receiving surface, a pumping ring disposed around a perimeter of the substrate receiving surface, and a gas distribution assembly disposed over the fixed substrate support. The pumping ring forms at least a portion of a pumping channel and has one or more apertures formed therethrough. The chamber may further include a gas-flow diffuser disposed radially inward of the apertures of the pumping ring. Another embodiment of a processing chamber includes a first assembly comprising a fixed substrate support and a second assembly comprising a gas distribution assembly. The first assembly includes a first assembly body that is shaped and sized so that at least a portion of the first assembly body is below the substrate receiving surface of the substrate support. A hinge assembly couples the first assembly and the second assembly. The first assembly and the second assembly can be selectively positioned between an open position and a closed position.
摘要翻译：本发明的实施例一般涉及具有固定衬底支撑件的蛤壳式和小容积室。处理室的一个实施例包括具有基板接收表面的固定基板支撑件，围绕基板接收表面的周边设置的泵送环和设置在固定基板支撑件上方的气体分配组件。泵送环形成泵送通道的至少一部分并且具有通过其形成的一个或多个孔。腔室还可以包括设置在泵送环的孔的径向内侧的气流扩散器。处理室的另一实施例包括包括固定衬底支撑件的第一组件和包括气体分配组件的第二组件。第一组件包括第一组件主体，其形状和尺寸使得第一组件主体的至少一部分在衬底支撑件的衬底接收表面下方。铰链组件联接第一组件和第二组件。第一组件和第二组件可以选择性地定位在打开位置和关闭位置之间。

4. 发明授权

US06718126B2 Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition 失效
标题翻译：用于汽化用于CVD或原子层沉积的固体前体的装置和方法
公开(公告)号：US06718126B2
公开(公告)日：2004-04-06
申请号：US09953451
申请日：2001-09-14
申请人： Lawrence C. Lei
发明人： Lawrence C. Lei
IPC分类号： C23C1400
CPC分类号： C23C16/4481
摘要： An apparatus and method for effectively and controllably vaporizing a solid precursor material is provided. In particular, the present invention provides an apparatus that includes a housing defining a sealed interior volume having an inlet for receiving a carrier gas, at least one surface within the housing for the application of a solid precursor, and a heating member for heating the solid precursor. The heating member can be located in the housing or in the surface within the housing. The surface can be a rod, baffle, mesh, or grating, and is preferably s-shaped or cone-shaped. Optionally, an outlet connects the housing to a reaction chamber. A method for vaporizing a solid precursor using the apparatus of the present invention is also provided.
摘要翻译：提供了一种用于有效和可控地汽化固体前体材料的装置和方法。特别地，本发明提供了一种装置，其包括限定密封的内部容积的壳体，所述壳体具有用于接收载气的入口，用于施加固体前体的壳体内的至少一个表面，以及用于加热固体的加热构件前体加热构件可以位于壳体内或壳体内的表面中。表面可以是杆，挡板，网格或光栅，并且优选地是s形或锥形的。可选地，出口将壳体连接到反应室。还提供了使用本发明的设备来蒸发固体前体的方法。

5. 发明授权

US06436192B1 Apparatus for aligning a wafer 有权
公开(公告)号：US06436192B1
公开(公告)日：2002-08-20
申请号：US09481055
申请日：2000-01-11
申请人： Ling Chen , Joseph Yudovsky , Ying Yu , Lawrence C. Lei
发明人： Ling Chen , Joseph Yudovsky , Ying Yu , Lawrence C. Lei
IPC分类号： C23C1600
摘要： A method for aligning a wafer on a support member within a vacuum chamber includes increasing the pressure within the vacuum chamber to at least about 1 Torr before aligning the wafer. The wafer is introduced into the vacuum chamber on the support member, the pressure is increased to at least about one Torr, and the support member is lifted into a shadow ring that has a frustoconical inner cavity constructed to funnel the wafer to a centered, aligned position.

6. 发明授权

US08342119B2 Self aligning non contact shadow ring process kit 有权
公开(公告)号：US08342119B2
公开(公告)日：2013-01-01
申请号：US11870285
申请日：2007-10-10
申请人： Joseph Yudovsky , Lawrence C. Lei , Salvador Umotoy , Tom Madar , Girish Dixit , Gwo-Chuan Tzu
发明人： Joseph Yudovsky , Lawrence C. Lei , Salvador Umotoy , Tom Madar , Girish Dixit , Gwo-Chuan Tzu
IPC分类号： C23C16/458
CPC分类号： C23C16/4585 , C30B25/12 , C30B31/14
摘要： The invention provides a removable first edge ring configured for pin and recess/slot coupling with a second edge ring disposed on the substrate support. In one embodiment, a first edge ring includes a plurality of pins, and a second edge ring includes one or more alignment recesses and one or more alignment slots for mating engagement with the pins. Each of the alignment recesses and alignment slots are at least as wide as the corresponding pins, and each of the alignment slots extends in the radial direction a length that is sufficient to compensate for the difference in thermal expansion between the first edge ring and the second edge ring.

7. 发明申请

US20080186022A1 METHOD AND APPARATUS FOR MEASURING OBJECT THICKNESS 有权
标题翻译：用于测量物体厚度的方法和装置
公开(公告)号：US20080186022A1
公开(公告)日：2008-08-07
申请号：US12099747
申请日：2008-04-08
申请人： Lawrence C. Lei , Siqing Lu , Yu Chang , Cecilia Martner , Quyen Pham , Yu Ping Gu , Joel Huston , Paul Smith , Gabriel Lorimer Miller
发明人： Lawrence C. Lei , Siqing Lu , Yu Chang , Cecilia Martner , Quyen Pham , Yu Ping Gu , Joel Huston , Paul Smith , Gabriel Lorimer Miller
IPC分类号： G01B7/06
CPC分类号： G01B7/105
摘要： A method and apparatus are provided for measuring the thickness of a test object. The apparatus includes an eddy current sensor having first and second sensor heads. The sensor heads are positioned to have a predetermined gap therebetween for passage by at least a portion of the test object through the gap. The sensor heads make measurements at given sampling locations on the test object as the test object is moved through the gap. The apparatus also includes a position sensing mechanism to determine positions of the sampling locations on the test object. The apparatus also includes an evaluation circuit in communication with the eddy current sensor and to the position sensing mechanism for determining the thickness of the test object at the sampling locations.
摘要翻译：提供了一种用于测量被测物体的厚度的方法和装置。该装置包括具有第一和第二传感器头的涡流传感器。传感器头被定位成在其间具有预定的间隙，以通过该测试对象的至少一部分通过间隙。当测试对象移动通过间隙时，传感器头在测试对象上的给定采样位置进行测量。该装置还包括位置检测机构，用于确定测试对象上的采样位置的位置。该装置还包括与涡流传感器和位置感测机构通信的评估电路，用于确定采样位置处的测试对象的厚度。

8. 发明授权

US07355394B2 Apparatus and method of dynamically measuring thickness of a layer of a substrate 有权
标题翻译：动态测量衬底层厚度的装置和方法
公开(公告)号：US07355394B2
公开(公告)日：2008-04-08
申请号：US11522416
申请日：2006-09-18
申请人： Lawrence C. Lei , Siqing Lu , Yu Chang , Cecilia Martner , Quyen Pham , Yu P. Gu , Joel Huston , Paul Smith , G. Lorimer Miller
发明人： Lawrence C. Lei , Siqing Lu , Yu Chang , Cecilia Martner , Quyen Pham , Yu P. Gu , Joel Huston , Paul Smith , G. Lorimer Miller
IPC分类号： G01B7/06 , G01N27/72
CPC分类号： G01B7/105
摘要： A method and apparatus are provided for measuring the thickness of a test object. The apparatus includes an eddy current sensor having first and second sensor heads. The sensor heads are positioned to have a predetermined gap therebetween for passage by at least a portion of the test object through the gap. The sensor heads make measurements at given sampling locations on the test object as the test object is moved through the gap. The apparatus also includes a position sensing mechanism to determine positions of the sampling locations on the test object. The apparatus also includes an evaluation circuit in communication with the eddy current sensor and to the position sensing mechanism for determining the thickness of the test object at the sampling locations.
摘要翻译：提供了一种用于测量被测物体的厚度的方法和装置。该装置包括具有第一和第二传感器头的涡流传感器。传感器头被定位成在其间具有预定的间隙，以通过该测试对象的至少一部分通过间隙。当测试对象移动通过间隙时，传感器头在测试对象上的给定采样位置进行测量。该装置还包括位置检测机构，用于确定测试对象上的采样位置的位置。该装置还包括与涡流传感器和位置感测机构通信的评估电路，用于确定采样位置处的测试对象的厚度。

9. 发明授权

US5516367A Chemical vapor deposition chamber with a purge guide 失效
标题翻译：具有清洗导管的化学气相沉积室
公开(公告)号：US5516367A
公开(公告)日：1996-05-14
申请号：US342670
申请日：1994-11-21
申请人： Lawrence C. Lei , Ilya Perlov , Karl A. Littau , Alan F. Morrison , Mei Chang , Ashok K. Sinha
发明人： Lawrence C. Lei , Ilya Perlov , Karl A. Littau , Alan F. Morrison , Mei Chang , Ashok K. Sinha
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , H01L21/00 , H01L21/68 , H01L21/687 , C23C16/00
CPC分类号： C23C16/45519 , C23C16/4412 , C23C16/45521 , C23C16/458 , C23C16/4583 , C23C16/4585 , C23C16/46 , H01L21/67103 , H01L21/68 , H01L21/68721 , H01L21/68728 , H01L21/68735 , H01L21/6875 , H01L21/68785 , H01L21/68792 , Y10S438/935
摘要： Vacuum CVD chambers are disclosed which provide a more uniformly deposited thin film on a substrate. The chamber susceptor mount for the substrate is heated resistively with a single coil firmly contacting the metal of the susceptor on all sides, providing uniform temperatures across the susceptor mount for a substrate. A purge gas line is connected to openings in the susceptor outside of the periphery of the substrate to prevent edge and backside contamination of the substrate. A vacuum feed line mounts the substrate to the susceptor plate during processing. A refractory purge guide, or a plurality of placement pins, maintain a fixed gap passage for the purge gases to pass alongside the edge of the wafer and into the processing area of the chamber. An exhaust pumping plate improves the uniformity of exhaustion of spent gases from the chamber.
摘要翻译：公开了真空CVD室，其在衬底上提供更均匀地沉积的薄膜。用于衬底的腔室基座安装件被电阻加热，单个线圈在基座的所有侧面上牢固地接触基座的金属，从而在基座的基座上提供均匀的温度。吹扫气体管线连接到基座外部的基座上的开口，以防止衬底的边缘和背面污染。在加工过程中，真空进料管将基板安装到基座板上。耐火吹扫引导件或多个安置销保持固定的间隙通道，以使净化气体沿着晶片的边缘并入腔室的处理区域中。排气泵板改善了来自腔室的废气排放的均匀性。

10. 发明授权

US07923069B2 Multi-station deposition apparatus and method 有权
标题翻译：多工位沉积装置及方法
公开(公告)号：US07923069B2
公开(公告)日：2011-04-12
申请号：US12860542
申请日：2010-08-20
申请人： Mei Chang , Lawrence C. Lei , Walter B. Glenn
发明人： Mei Chang , Lawrence C. Lei , Walter B. Glenn
IPC分类号： C23C16/00
CPC分类号： H01L21/67167 , C23C16/45512 , C23C16/45519 , C23C16/45551 , C23C16/45565 , C23C16/4586 , C23C16/54 , H01L21/67017 , H01L21/6719
摘要： A multi-station deposition apparatus capable of simultaneous processing multiple substrates using a plurality of stations, where a gas curtain separates the stations. The apparatus further comprises a multi-station platen that supports a plurality of wafers and rotates the wafers into specific deposition positions at which deposition gases are supplied to the wafers. The deposition gases may be supplied to the wafer through single zone or multi-zone gas dispensing nozzles.
摘要翻译：一种多站沉积装置，其能够使用多个站同时处理多个基板，其中气幕将站分离。该装置还包括支撑多个晶片并将晶片旋转到特定沉积位置的多工位台板，在该沉积位置将沉积气体供应到晶片。沉积气体可以通过单区或多区气体分配喷嘴供应到晶片。

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