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    • 4. 发明授权
    • Method and apparatus for preventing edge deposition
    • 防止边缘沉积的方法和装置
    • US06375748B1
    • 2002-04-23
    • US09387928
    • 1999-09-01
    • Joseph YudovskyTom MadarSalvador UmotoySon Ngoc TrinhLawrence C. LeiAnzhong (Andrew) ChangXiaoxiong (John) Yuan
    • Joseph YudovskyTom MadarSalvador UmotoySon Ngoc TrinhLawrence C. LeiAnzhong (Andrew) ChangXiaoxiong (John) Yuan
    • C23C1600
    • H01L21/68735H01L21/68785
    • A substrate support having a removable edge ring, which is made of a material having a lower coefficient of thermal expansion (CTE), than that of the substrate support is provided. The edge ring and the substrate support are configured for pin and slot coupling. Specifically, either the edge ring, or the substrate support comprises a plurality of pins, and the other of the edge ring or the substrate support comprises a plurality of hollow regions or slots in which the pins may be inserted. The slots are at least as wide as a corresponding one of the plurality of pins and extend in the direction in which the substrate support expands and contracts during thermal cycling. Each of the slots extends a length which is sufficient to compensate for the difference between the CTE of the substrate support and the CTE of the edge ring, over the range of process temperatures to which the apparatus is exposed. Preferably the susceptor is made of aluminum, and the edge ring is made of ceramic. A restrictor gap may be defined between a surface of the substrate support and a surface of the purge ring so as to restrict a volume of purge gas flowing to an edge of a substrate positioned on the substrate support. The purge gas delivery channel may have an exposed outlet and may be upwardly angled to facilitate cleaning.
    • 提供了一种具有可移除的边缘环的衬底支撑件,其由具有比衬底支撑件的热膨胀系数(CTE)低的材料制成。 边缘环和基板支撑件配置为销和槽联接。 具体来说,边缘环或衬底支撑件包括多个销,并且边缘环或衬底支撑件中的另一个包括可以插入销的多个中空区域或狭槽。 所述槽至少与所述多个销中相应的销一样宽,并且在所述基板支撑件在热循环期间膨胀和收缩的方向上延伸。 每个狭槽的长度足以补偿基板支撑件的CTE与边缘环的CTE之间的差异,在该设备暴露于该处理温度的范围内。 优选地,基座由铝制成,并且边缘环由陶瓷制成。 限定器间隙可以限定在衬底支撑件的表面和净化环的表面之间,以便限制流过位于衬底支撑件上的衬底的边缘的吹扫气体的体积。 净化气体输送通道可以具有暴露的出口并且可以向上成角度以便于清洁。
    • 5. 发明授权
    • Tungsten chamber with stationary heater
    • 带固定加热器的钨室
    • US06503331B1
    • 2003-01-07
    • US09660006
    • 2000-09-12
    • Joseph YudovskyLawrence C. LeiSalvador Umotoy
    • Joseph YudovskyLawrence C. LeiSalvador Umotoy
    • C23C1600
    • H01J37/3244H01J2237/022
    • Provided herewith is a chamber for depositing a film on a substrate comprising a process compartment; a purge compartment, a purge ring located on the chamber body to separate the two compartments, a heater, and a shadow ring covering the periphery of the substrate. Alternatively, the chamber may further comprise a shield interconnected with the shadow ring. Still provided is a method for depositing a film of uniformity on a substrate in such a chamber. The method comprises the steps of positioning the substrate in a process compartment; flowing a process gas into the process compartment; flowing a purge gas in a purge compartment; and exhausting the process and purge gas from the chamber, thereby depositing a film of uniformity on the substrate.
    • 提供了一种用于在包括处理隔室的基板上沉积膜的室; 净化室,位于室主体上以分离两个隔室的清洗环,加热器和覆盖基板周边的阴影环。 或者,腔室可以进一步包括与阴影环互连的护罩。 仍然提供了一种在这种室中的基板上沉积均匀膜的方法。 该方法包括以下步骤:将基板定位在处理室中; 将工艺气体流入加工室; 将吹扫气体流入净化室; 并排出该过程并从室中吹扫气体,从而在衬底上沉积均匀的膜。
    • 7. 发明授权
    • Substrate support including purge ring having inner edge aligned to wafer edge
    • 衬底支撑件包括具有与晶片边缘对准的内边缘的清洗环
    • US06521292B1
    • 2003-02-18
    • US09632645
    • 2000-08-04
    • Joseph YudovskySalvador UmotoyThomas Madar
    • Joseph YudovskySalvador UmotoyThomas Madar
    • C23C1652
    • C23C16/45521C23C16/455C23C16/4585H01L21/68721H01L21/68735
    • The present invention provides exemplary apparatus and methods for processing substrates and for ensuring purge gases reach the substrate edge, including edges of JMF type wafers, to help prevent unwanted deposition thereon. One embodiment provides an apparatus for processing substrates which includes a chamber and a substrate support (13) disposed in the chamber. An edge ring (15) is disposed on the substrate support. The edge ring has a lip portion (30) which at least partially overhangs an upper surface (36) of the substrate support to define a gap (29) between the lip portion and the upper surface. In this manner, the edge ring is designed to form a gap which properly directs purge gases to edges of the substrate, including JMF type substrates.
    • 本发明提供了用于处理基板并用于确保吹扫气体到达基板边缘(包括JMF型晶片的边缘)的示例性装置和方法,以帮助防止其上不希望的沉积。 一个实施例提供了一种用于处理衬底的设备,其包括设置在腔室中的室和衬底支撑件(13)。 边缘环(15)设置在基板支撑件上。 边缘环具有唇部(30),其至少部分地悬垂在基底支撑件的上表面(36)上,以在唇部和上表面之间限定间隙(29)。 以这种方式,边缘环被设计成形成适当地将吹扫气体引导到衬底边缘的间隙,包括JMF型衬底。