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    • 1. 发明授权
    • Photoresist compositions and methods for shrinking a photoresist critical dimension
    • 用于收缩光刻胶临界尺寸的光刻胶组合物和方法
    • US08394573B2
    • 2013-03-12
    • US12883442
    • 2010-09-16
    • Wu-Song HuangKuang-Jung ChenWai-Kin LiSen Liu
    • Wu-Song HuangKuang-Jung ChenWai-Kin LiSen Liu
    • G03F7/00G03F7/004G03F7/40
    • G03F7/40G03F7/0045G03F7/0397G03F7/405
    • A method for reducing a photoresist critical dimension, the method comprising depositing a photoresist film on a substrate, wherein the photoresist film includes a thermal base generator; patterning the photoresist film to form a first patterned film possessing a first critical dimension; depositing a crosslinkable film over the first patterned film; heat-activating the first patterned film, either before or after depositing the crosslinkable film, to release a base in the first patterned film and cause crosslinking in the crosslinkable film in contact with the first patterned film; and developing the crosslinkable film to remove non-crosslinked soluble portions therein to form a second patterned film possessing a reduced critical dimension compared to the first critical dimension.
    • 一种降低光致抗蚀剂临界尺寸的方法,所述方法包括在基底上沉积光致抗蚀剂膜,其中光致抗蚀剂膜包括热碱发生器; 图案化光致抗蚀剂膜以形成具有第一临界尺寸的第一图案化膜; 在第一图案化膜上沉积可交联膜; 在沉积可交联膜之前或之后热激活第一图案化膜,以释放第一图案化膜中的碱,并引起与第一图案化膜接触的可交联膜的交联; 并且显影所述可交联膜以除去其中的非交联的可溶部分以形成与第一临界尺寸相比具有降低的临界尺寸的第二图案化膜。
    • 2. 发明申请
    • PHOTORESIST COMPOSITIONS AND METHOD FOR MULTIPLE EXPOSURES WITH MULTIPLE LAYER RESIST SYSTEMS
    • 多层耐蚀系统多光照的组合物和方法
    • US20090155715A1
    • 2009-06-18
    • US12356187
    • 2009-01-20
    • Kuang-Jung ChenWu-Song HuangWai-Kin LiPushkara Rao VaranasiSen Liu
    • Kuang-Jung ChenWu-Song HuangWai-Kin LiPushkara Rao VaranasiSen Liu
    • G03F7/20G03F7/004
    • G03F7/0045G03F7/0035G03F7/0397G03F7/40
    • A method and a resist composition. The resist composition includes a polymer having repeating units having a lactone moiety, a thermal base generator capable of generating a base and a photosensitive acid generator. The polymer has the properties of being substantially soluble in a first solvent and becoming substantially insoluble after heating the polymer. The method includes forming a film of a photoresist including a polymer, a thermal base generator capable of releasing a base, a photosensitive acid generator, and a solvent. The film is patternwise imaged. The imaging includes exposing the film to radiation, resulting in producing an acid catalyst. The film is developed in an aqueous base, resulting in removing base-soluble regions and forming a patterned layer. The patterned layer is baked above the temperature, resulting in the thermal base generator releasing a base within the patterned layer and the patterned layer becoming insoluble in the solvent.
    • 一种方法和抗蚀剂组合物。 抗蚀剂组合物包括具有内酯部分的重复单元的聚合物,能够产生碱的热碱发生剂和感光酸产生剂。 聚合物具有基本上可溶于第一溶剂的性质,并且在加热聚合物之后变得基本上不溶。 该方法包括形成包含聚合物的光致抗蚀剂膜,能够释放碱的热碱发生器,光敏酸产生剂和溶剂。 该影片被图案化成像。 成像包括将膜暴露于辐射,导致产生酸催化剂。 该膜在水性碱中显影,导致去除碱溶性区域并形成图案层。 图案化层被烘烤高于该温度,导致热基发生器释放图案化层内的基底并且图案化层变得不溶于溶剂。
    • 3. 发明申请
    • PHOTORESIST COMPOSITIONS AND METHODS FOR SHRINKING A PHOTORESIST CRITICAL DIMENSION
    • 光电复合材料组合物和方法,用于收缩光刻胶关键尺寸
    • US20120070787A1
    • 2012-03-22
    • US12883442
    • 2010-09-16
    • Wu-Song HuangKuang-Jung ChenWai-Kin LiSen Liu
    • Wu-Song HuangKuang-Jung ChenWai-Kin LiSen Liu
    • G03F7/20
    • G03F7/40G03F7/0045G03F7/0397G03F7/405
    • A method for reducing a photoresist critical dimension, the method comprising depositing a photoresist film on a substrate, wherein the photoresist film includes a thermal base generator; patterning the photoresist film to form a first patterned film possessing a first critical dimension; depositing a crosslinkable film over the first patterned film; heat-activating the first patterned film, either before or after depositing the crosslinkable film, to release a base in the first patterned film and cause crosslinking in the crosslinkable film in contact with the first patterned film; and developing the crosslinkable film to remove non-crosslinked soluble portions therein to form a second patterned film possessing a reduced critical dimension compared to the first critical dimension.
    • 一种降低光致抗蚀剂临界尺寸的方法,所述方法包括在基底上沉积光致抗蚀剂膜,其中光致抗蚀剂膜包括热碱发生器; 图案化光致抗蚀剂膜以形成具有第一临界尺寸的第一图案化膜; 在第一图案化膜上沉积可交联膜; 在沉积可交联膜之前或之后热激活第一图案化膜,以释放第一图案化膜中的碱,并引起与第一图案化膜接触的可交联膜的交联; 并且显影所述可交联膜以除去其中的非交联的可溶部分以形成与第一临界尺寸相比具有降低的临界尺寸的第二图案化膜。
    • 5. 发明申请
    • PHOTORESIST COMPOSITION FOR NEGATIVE DEVELOPMENT AND PATTERN FORMING METHOD USING THEREOF
    • 用于负面发展的光电组合物及其使用的图案形成方法
    • US20120122031A1
    • 2012-05-17
    • US12946232
    • 2010-11-15
    • Kuang-Jung ChenSen LiuWu-Song HuangWai-Kin Li
    • Kuang-Jung ChenSen LiuWu-Song HuangWai-Kin Li
    • G03F7/004G03F7/20
    • G03F7/325G03F7/0397
    • The present invention relates to a photoresist composition capable of negative development and a pattern forming method using the photoresist composition. The photoresist composition includes an imaging polymer and a radiation sensitive acid generator. The imaging polymer includes a first monomeric unit having a pendant acid labile moiety and a second monomeric unit containing a reactive ether moiety, an isocyanide moiety or an isocyanate moiety. The patterning forming method utilizes an organic solvent developer to selectively remove unexposed regions of a photoresist layer of the photoresist composition to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method are especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.
    • 本发明涉及能够显影的光致抗蚀剂组合物和使用光致抗蚀剂组合物的图案形成方法。 光致抗蚀剂组合物包括成像聚合物和辐射敏感酸产生剂。 成像聚合物包括具有侧链酸不稳定部分的第一单体单元和包含反应性醚部分,异氰化物部分或异氰酸酯部分的第二单体单元。 图案形成方法利用有机溶剂显影剂选择性地除去光致抗蚀剂组合物的光致抗蚀剂层的未曝光区域,以在光致抗蚀剂层中形成图案化结构。 光致抗蚀剂组合物和图案形成方法对于使用193nm(ArF)光刻在半导体衬底上形成材料图案特别有用。
    • 6. 发明授权
    • Method of forming semiconductor structures with contact holes
    • 形成具有接触孔的半导体结构的方法
    • US09449822B2
    • 2016-09-20
    • US12846020
    • 2010-07-29
    • Wai-Kin LiWu-Song HuangJoy ChengKuang-Jung Chen
    • Wai-Kin LiWu-Song HuangJoy ChengKuang-Jung Chen
    • H01L21/033
    • H01L21/0337H01L21/0338
    • Embodiments of the present invention provide a method of forming a semiconductor structure. The method includes forming a set of shapes on top of a substrate; applying a layer of copolymer covering the substrate; causing the copolymer to form a plurality of cylindrical blocks both inside and outside the shapes; forming a pattern of contact holes from the plurality of cylindrical blocks; and transferring the pattern of contact holes to the substrate to form the semiconductor structure. In one embodiment, the shapes are rings and forming the set of shapes includes forming a set of rings that are equally and squarely spaced. In another embodiment, causing the copolymer to form the plurality of cylindrical blocks includes forming only one cylindrical block inside each of the rings and only one cylindrical block outside every four (4) squarely neighboring rings.
    • 本发明的实施例提供一种形成半导体结构的方法。 该方法包括在衬底的顶部上形成一组形状; 涂覆覆盖基材的共聚物层; 使共聚物在形状内部和外部形成多个圆柱形块; 从所述多个圆柱形块形成接触孔的图案; 并将接触孔的图案转移到衬底以形成半导体结构。 在一个实施例中,形状是环,并且形成一组形状包括形成均匀且平直间隔的一组环。 在另一个实施方案中,使共聚物形成多个圆柱形块包括仅在每个环内形成一个圆柱形块,并且在每四(4)个正方形相邻的环周围仅形成一个圆柱形块。
    • 8. 发明申请
    • PHOTORESIST COMPOSITIONS AND PROCESS FOR MULTIPLE EXPOSURES WITH MULTIPLE LAYER PHOTORESIST SYSTEMS
    • 多层次光电子系统的多光照组合物和工艺
    • US20090130590A1
    • 2009-05-21
    • US11942062
    • 2007-11-19
    • Kuang-Jung ChenWu-Song HuangWai-Kin LiPushkara R. Varanasi
    • Kuang-Jung ChenWu-Song HuangWai-Kin LiPushkara R. Varanasi
    • G03C1/73G03F7/26
    • G03F7/0048G03F7/0035G03F7/0397G03F7/40
    • A photoresist composition and methods using the photoresist composition in multiple exposure/multiple layer processes. The photoresist composition includes a polymer comprising repeat units having a hydroxyl moiety; a photoacid generator; and a solvent. The polymer when formed on a substrate is substantially insoluble to the solvent after heating to a temperature of about 150° C. or greater. One method includes forming a first photoresist layer on a substrate, patternwise exposing the first photoresist layer, forming a second non photoresist layer on the substrate and patterned first photoresist layer. Another method includes forming a first photoresist layer on a substrate, patternwise exposing the first photoresist layer, forming a second photoresist layer on the substrate and patterned first photoresist layer and patternwise exposing the second photoresist layer.
    • 光致抗蚀剂组合物和在多次曝光/多层工艺中使用光致抗蚀剂组合物的方法。 光致抗蚀剂组合物包括包含具有羟基部分的重复单元的聚合物; 光致酸发生器; 和溶剂。 形成在基材上的聚合物在加热至约150℃或更高的温度之后基本上不溶于溶剂。 一种方法包括在衬底上形成第一光致抗蚀剂层,图案地暴露第一光致抗蚀剂层,在衬底上形成第二非光致抗蚀剂层并且形成图案化的第一光致抗蚀剂层。 另一种方法包括在衬底上形成第一光致抗蚀剂层,以图形方式暴露第一光致抗蚀剂层,在衬底上形成第二光致抗蚀剂层并图案化的第一光致抗蚀剂层和图案地曝光第二光致抗蚀剂层。
    • 10. 发明授权
    • Method for reducing side lobe printing using a barrier layer
    • 使用阻挡层减少旁瓣印刷的方法
    • US08268542B2
    • 2012-09-18
    • US11949190
    • 2007-12-03
    • Kuang-Jung ChenWu-Song HuangWai-kin Li
    • Kuang-Jung ChenWu-Song HuangWai-kin Li
    • G03F7/26
    • G03F7/095
    • A method suitable for reducing side lobe printing in a photolithography process is enabled by the use of a barrier layer on top of a photoresist on a substrate. The barrier layer is absorbing at the imaging wavelength of the underlying photoresist and thus blocks the light from reaching the photoresist. A first exposure followed by a development in an aqueous base solution selectively removes a portion of the barrier layer to reveal a section of the underlying photoresist layer. At least a portion of the revealed section of the photoresist layer is then exposed and developed to form a patterned structure in the photoresist layer. The barrier layer can also be bleachable upon exposure and bake in the present invention.
    • 通过在基板上的光致抗蚀剂的顶部上使用阻挡层,能够实现在光刻工艺中减少旁瓣印刷的方法。 阻挡层在下面的光致抗蚀剂的成像波长处吸收,从而阻挡光到达光致抗蚀剂。 第一曝光随后在碱性水溶液中显影,选择性地除去阻挡层的一部分以露出下面的光致抗蚀剂层的一部分。 然后将光致抗蚀剂层的显露部分的至少一部分曝光和显影以在光致抗蚀剂层中形成图案化结构。 在本发明中曝光和烘烤时,阻挡层也可以是可漂白的。