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1. 发明授权

US08846295B2 Photoresist composition containing a protected hydroxyl group for negative development and pattern forming method using thereof 有权
标题翻译：含有被保护的羟基用于负显影的光致抗蚀剂组合物和使用它的图案形成方法
公开(公告)号：US08846295B2
公开(公告)日：2014-09-30
申请号：US13457735
申请日：2012-04-27
申请人： Kuang-Jung Chen , Wu-Song Huang , Wai-Kin Li
发明人： Kuang-Jung Chen , Wu-Song Huang , Wai-Kin Li
IPC分类号： G03F7/038 , G03F7/021
CPC分类号： G03F7/0382 , G03F7/021 , G03F7/0397 , G03F7/20 , G03F7/325
摘要： The present invention relates to a photoresist composition capable of negative development and a pattern forming method using the photoresist composition. The photoresist composition includes an imaging polymer, a crosslinking agent and a radiation sensitive acid generator. The imaging polymer includes a monomeric unit having an acid-labile moiety-substituted hydroxyl group. The patterning forming method utilizes an organic solvent developer to selectively remove an unexposed region of a photoresist layer of the photoresist composition to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method are especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.
摘要翻译：本发明涉及能够显影的光致抗蚀剂组合物和使用光致抗蚀剂组合物的图案形成方法。光致抗蚀剂组合物包括成像聚合物，交联剂和辐射敏感的酸发生剂。成像聚合物包括具有酸不稳定部分取代的羟基的单体单元。图案形成方法利用有机溶剂显影剂选择性地除去光致抗蚀剂组合物的光致抗蚀剂层的未曝光区域，以在光致抗蚀剂层中形成图案化结构。光致抗蚀剂组合物和图案形成方法对于使用193nm（ArF）光刻在半导体衬底上形成材料图案特别有用。

2. 发明申请

US20090155715A1 PHOTORESIST COMPOSITIONS AND METHOD FOR MULTIPLE EXPOSURES WITH MULTIPLE LAYER RESIST SYSTEMS 有权
标题翻译：多层耐蚀系统多光照的组合物和方法
公开(公告)号：US20090155715A1
公开(公告)日：2009-06-18
申请号：US12356187
申请日：2009-01-20
申请人： Kuang-Jung Chen , Wu-Song Huang , Wai-Kin Li , Pushkara Rao Varanasi , Sen Liu
发明人： Kuang-Jung Chen , Wu-Song Huang , Wai-Kin Li , Pushkara Rao Varanasi , Sen Liu
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/0045 , G03F7/0035 , G03F7/0397 , G03F7/40
摘要： A method and a resist composition. The resist composition includes a polymer having repeating units having a lactone moiety, a thermal base generator capable of generating a base and a photosensitive acid generator. The polymer has the properties of being substantially soluble in a first solvent and becoming substantially insoluble after heating the polymer. The method includes forming a film of a photoresist including a polymer, a thermal base generator capable of releasing a base, a photosensitive acid generator, and a solvent. The film is patternwise imaged. The imaging includes exposing the film to radiation, resulting in producing an acid catalyst. The film is developed in an aqueous base, resulting in removing base-soluble regions and forming a patterned layer. The patterned layer is baked above the temperature, resulting in the thermal base generator releasing a base within the patterned layer and the patterned layer becoming insoluble in the solvent.
摘要翻译：一种方法和抗蚀剂组合物。抗蚀剂组合物包括具有内酯部分的重复单元的聚合物，能够产生碱的热碱发生剂和感光酸产生剂。聚合物具有基本上可溶于第一溶剂的性质，并且在加热聚合物之后变得基本上不溶。该方法包括形成包含聚合物的光致抗蚀剂膜，能够释放碱的热碱发生器，光敏酸产生剂和溶剂。该影片被图案化成像。成像包括将膜暴露于辐射，导致产生酸催化剂。该膜在水性碱中显影，导致去除碱溶性区域并形成图案层。图案化层被烘烤高于该温度，导致热基发生器释放图案化层内的基底并且图案化层变得不溶于溶剂。

3. 发明授权

US08268542B2 Method for reducing side lobe printing using a barrier layer 有权
标题翻译：使用阻挡层减少旁瓣印刷的方法
公开(公告)号：US08268542B2
公开(公告)日：2012-09-18
申请号：US11949190
申请日：2007-12-03
申请人： Kuang-Jung Chen , Wu-Song Huang , Wai-kin Li
发明人： Kuang-Jung Chen , Wu-Song Huang , Wai-kin Li
IPC分类号： G03F7/26
CPC分类号： G03F7/095
摘要： A method suitable for reducing side lobe printing in a photolithography process is enabled by the use of a barrier layer on top of a photoresist on a substrate. The barrier layer is absorbing at the imaging wavelength of the underlying photoresist and thus blocks the light from reaching the photoresist. A first exposure followed by a development in an aqueous base solution selectively removes a portion of the barrier layer to reveal a section of the underlying photoresist layer. At least a portion of the revealed section of the photoresist layer is then exposed and developed to form a patterned structure in the photoresist layer. The barrier layer can also be bleachable upon exposure and bake in the present invention.
摘要翻译：通过在基板上的光致抗蚀剂的顶部上使用阻挡层，能够实现在光刻工艺中减少旁瓣印刷的方法。阻挡层在下面的光致抗蚀剂的成像波长处吸收，从而阻挡光到达光致抗蚀剂。第一曝光随后在碱性水溶液中显影，选择性地除去阻挡层的一部分以露出下面的光致抗蚀剂层的一部分。然后将光致抗蚀剂层的显露部分的至少一部分曝光和显影以在光致抗蚀剂层中形成图案化结构。在本发明中曝光和烘烤时，阻挡层也可以是可漂白的。

4. 发明授权

US08227307B2 Method for removing threshold voltage adjusting layer with external acid diffusion process 有权
标题翻译：用外部酸性扩散法去除阈值电压调节层的方法
公开(公告)号：US08227307B2
公开(公告)日：2012-07-24
申请号：US12490353
申请日：2009-06-24
申请人： Kuang-Jung Chen , Ricardo A. Donaton , Wu-Song Huang , Wai-Kin Li
发明人： Kuang-Jung Chen , Ricardo A. Donaton , Wu-Song Huang , Wai-Kin Li
IPC分类号： H01L21/8238 , H01L21/31
CPC分类号： H01L21/31122 , H01L21/823842 , H01L21/823857
摘要： The present invention provides a method of forming a threshold voltage adjusted gate stack in which an external acid diffusion process is employed for selectively removing a portion of a threshold voltage adjusting layer from one device region of a semiconductor substrate. The external acid diffusion process utilizes an acid polymer which when baked exhibits an increase in acid concentration which can diffuse into an underlying exposed portion of a threshold voltage adjusting layer. The diffused acid reacts with the exposed portion of the threshold voltage adjusting layer providing an acid reacted layer that can be selectively removed as compared to a laterally adjacent portion of the threshold voltage adjusting layer that is not exposed to the diffused acid.
摘要翻译：本发明提供一种形成阈值电压调节的栅极叠层的方法，其中使用外部酸扩散工艺来从半导体衬底的一个器件区域选择性地去除一部分阈值电压调节层。外部酸扩散方法使用酸性聚合物，其在烘烤时表现出酸浓度的增加，其可以扩散到阈值电压调节层的下部暴露部分。扩散的酸与阈值电压调节层的暴露部分反应，提供酸反应层，与不暴露于扩散的酸的阈值电压调节层的横向相邻部分相比，可以选择性地除去酸反应层。

5. 发明授权

US08227180B2 Photolithography focus improvement by reduction of autofocus radiation transmission into substrate 有权
标题翻译：通过将自动聚焦辐射透射减少到基底中来进行光刻聚焦改进
公开(公告)号：US08227180B2
公开(公告)日：2012-07-24
申请号：US13158901
申请日：2011-06-13
申请人： Timothy Allan Brunner , Sean David Burns , Kuang-Jung Chen , Wu-Song Huang , Kafai Lai , Wai-Kin Li , Bernhard R. Liegl
发明人： Timothy Allan Brunner , Sean David Burns , Kuang-Jung Chen , Wu-Song Huang , Kafai Lai , Wai-Kin Li , Bernhard R. Liegl
IPC分类号： G03F7/00 , G03F7/028 , G03F7/11 , G03F7/20 , G03F7/40
CPC分类号： G03F7/091 , G03F7/70216 , Y10S430/127
摘要： An anti-reflective coating material, a microelectronic structure that includes an anti-reflective coating layer formed from the anti-reflective coating material and a related method for exposing a resist layer located over a substrate while using the anti-reflective coating layer provide for attenuation of secondary reflected vertical alignment beam radiation when aligning the substrate including the resist layer located thereover. Such enhanced vertical alignment provides for improved dimensional integrity of a patterned resist layer formed from the resist layer, as well as additional target layers that may be fabricated while using the resist layer as a mask.
摘要翻译：防反射涂层材料，包括由抗反射涂层材料形成的抗反射涂层的微电子结构和用于在使用抗反射涂层的同时使位于基板上的抗蚀剂层曝光的相关方法提供衰减当对准包括位于其上的抗蚀剂层的衬底时，二次反射垂直取向束辐射。这种增强的垂直对准提供了由抗蚀剂层形成的图案化抗蚀剂层的改进的尺寸完整性，以及可以在使用抗蚀剂层作为掩模时制造的附加目标层。

6. 发明申请

US20120070787A1 PHOTORESIST COMPOSITIONS AND METHODS FOR SHRINKING A PHOTORESIST CRITICAL DIMENSION 失效
标题翻译：光电复合材料组合物和方法，用于收缩光刻胶关键尺寸
公开(公告)号：US20120070787A1
公开(公告)日：2012-03-22
申请号：US12883442
申请日：2010-09-16
申请人： Wu-Song Huang , Kuang-Jung Chen , Wai-Kin Li , Sen Liu
发明人： Wu-Song Huang , Kuang-Jung Chen , Wai-Kin Li , Sen Liu
IPC分类号： G03F7/20
CPC分类号： G03F7/40 , G03F7/0045 , G03F7/0397 , G03F7/405
摘要： A method for reducing a photoresist critical dimension, the method comprising depositing a photoresist film on a substrate, wherein the photoresist film includes a thermal base generator; patterning the photoresist film to form a first patterned film possessing a first critical dimension; depositing a crosslinkable film over the first patterned film; heat-activating the first patterned film, either before or after depositing the crosslinkable film, to release a base in the first patterned film and cause crosslinking in the crosslinkable film in contact with the first patterned film; and developing the crosslinkable film to remove non-crosslinked soluble portions therein to form a second patterned film possessing a reduced critical dimension compared to the first critical dimension.
摘要翻译：一种降低光致抗蚀剂临界尺寸的方法，所述方法包括在基底上沉积光致抗蚀剂膜，其中光致抗蚀剂膜包括热碱发生器; 图案化光致抗蚀剂膜以形成具有第一临界尺寸的第一图案化膜; 在第一图案化膜上沉积可交联膜; 在沉积可交联膜之前或之后热激活第一图案化膜，以释放第一图案化膜中的碱，并引起与第一图案化膜接触的可交联膜的交联; 并且显影所述可交联膜以除去其中的非交联的可溶部分以形成与第一临界尺寸相比具有降低的临界尺寸的第二图案化膜。

7. 发明授权

US07838200B2 Photoresist compositions and method for multiple exposures with multiple layer resist systems 有权
公开(公告)号：US07838200B2
公开(公告)日：2010-11-23
申请号：US12356187
申请日：2009-01-20
申请人： Kuang-Jung Chen , Wu-Song Huang , Wai-kin Li , Pushkara R. Varanasi , Sen Liu
发明人： Kuang-Jung Chen , Wu-Song Huang , Wai-kin Li , Pushkara R. Varanasi , Sen Liu
IPC分类号： G03F7/00 , G03F7/004 , G03F7/20 , G03F7/26 , G03F7/40
CPC分类号： G03F7/0045 , G03F7/0035 , G03F7/0397 , G03F7/40
摘要： A method and a resist composition. The resist composition includes a polymer having repeating units having a lactone moiety, a thermal base generator capable of generating a base and a photosensitive acid generator. The polymer has the properties of being substantially soluble in a first solvent and becoming substantially insoluble after heating the polymer. The method includes forming a film of a photoresist including a polymer, a thermal base generator capable of releasing a base, a photosensitive acid generator, and a solvent. The film is patternwise imaged. The imaging includes exposing the film to radiation, resulting in producing an acid catalyst. The film is developed in an aqueous base, resulting in removing base-soluble regions and forming a patterned layer. The patterned layer is baked above the temperature, resulting in the thermal base generator releasing a base within the patterned layer and the patterned layer becoming insoluble in the solvent.

8. 发明授权

US07803521B2 Photoresist compositions and process for multiple exposures with multiple layer photoresist systems 失效
标题翻译：光刻胶组合物和多层光刻胶系统的多次曝光工艺
公开(公告)号：US07803521B2
公开(公告)日：2010-09-28
申请号：US11942062
申请日：2007-11-19
申请人： Kuang-Jung Chen , Wu-Song Huang , Wai-Kin Li , Pushkara R. Varanasi
发明人： Kuang-Jung Chen , Wu-Song Huang , Wai-Kin Li , Pushkara R. Varanasi
IPC分类号： G03F7/30
CPC分类号： G03F7/0048 , G03F7/0035 , G03F7/0397 , G03F7/40
摘要： A photoresist composition and methods using the photoresist composition in multiple exposure/multiple layer processes. The photoresist composition includes a polymer comprising repeat units having a hydroxyl moiety; a photoacid generator; and a solvent. The polymer when formed on a substrate is substantially insoluble to the solvent after heating to a temperature of about 150° C. or greater. One method includes forming a first photoresist layer on a substrate, patternwise exposing the first photoresist layer, forming a second non photoresist layer on the substrate and patterned first photoresist layer. Another method includes forming a first photoresist layer on a substrate, patternwise exposing the first photoresist layer, forming a second photoresist layer on the substrate and patterned first photoresist layer and patternwise exposing the second photoresist layer.
摘要翻译：光致抗蚀剂组合物和在多次曝光/多层工艺中使用光致抗蚀剂组合物的方法。光致抗蚀剂组合物包括包含具有羟基部分的重复单元的聚合物; 光致酸发生器; 和溶剂。形成在基材上的聚合物在加热至约150℃或更高的温度之后基本上不溶于溶剂。一种方法包括在衬底上形成第一光致抗蚀剂层，图案地暴露第一光致抗蚀剂层，在衬底上形成第二非光致抗蚀剂层并且形成图案化的第一光致抗蚀剂层。另一种方法包括在衬底上形成第一光致抗蚀剂层，以图形方式暴露第一光致抗蚀剂层，在衬底上形成第二光致抗蚀剂层并图案化的第一光致抗蚀剂层和图案地曝光第二光致抗蚀剂层。

9. 发明申请

US20100009298A1 FORMING SUB-LITHOGRAPHIC PATTERNS USING DOUBLE EXPOSURE 失效
标题翻译：使用双重曝光形成亚光刻图案
公开(公告)号：US20100009298A1
公开(公告)日：2010-01-14
申请号：US12170722
申请日：2008-07-10
申请人： Kuang-Jung Chen , Wu-Song Huang , Wai-Kin Li
发明人： Kuang-Jung Chen , Wu-Song Huang , Wai-Kin Li
IPC分类号： G03F7/20
CPC分类号： G03F7/2024
摘要： Methods are presented of forming sub-lithographic patterns using double exposure. One method may include providing a photoresist layer over a layer to be patterned; exposing the photoresist layer using a first mask having a first opening; developing the photoresist layer to transfer the first opening into the photoresist layer, forming a boundary in the photoresist layer about the transferred first opening that is hardened; exposing the photoresist layer using a second mask having a second opening that overlaps the boundary; and developing the photoresist layer to transfer the second opening into the photoresist layer, leaving the boundary, wherein the boundary has a sub-lithographic dimension.
摘要翻译：提出了使用双重曝光形成亚光刻图案的方法。一种方法可以包括在待图案化的层上提供光致抗蚀剂层; 使用具有第一开口的第一掩模曝光光致抗蚀剂层; 显影所述光致抗蚀剂层以将所述第一开口转移到所述光致抗蚀剂层中，在所述光致抗蚀剂层周围形成围绕被硬化的转移的第一开口的边界; 使用具有与边界重叠的第二开口的第二掩模曝光光致抗蚀剂层; 并且显影所述光致抗蚀剂层以将所述第二开口转移到所述光致抗蚀剂层中，留下所述边界，其中所述边界具有亚光刻尺寸。

10. 发明授权

US07560222B2 Si-containing polymers for nano-pattern device fabrication 失效
标题翻译：用于纳米图案器件制造的含Si聚合物
公开(公告)号：US07560222B2
公开(公告)日：2009-07-14
申请号：US11554877
申请日：2006-10-31
申请人： Kuang-Jung Chen , Wu-Song Huang , Wai-Kin Li , Yi-Hsiung S. Lin
发明人： Kuang-Jung Chen , Wu-Song Huang , Wai-Kin Li , Yi-Hsiung S. Lin
IPC分类号： G03F7/36 , G03F7/34
CPC分类号： G03F7/0758 , G03F7/0045
摘要： A resist polymer that has nano-scale patterns located therein that are in the form of sub lithographic hollow pores (or openings) that are oriented in a direction that is substantially perpendicular with that of its major surfaces (top and bottom) is provided. Such a resist polymer having the nano-scale patterns is used as an etch mask transferring nano-scale patterns to an underlying substrate such as, for example, dielectric material. After the transferring of the nano-scale patterns into the substrate, nano-scale voids (or openings) having a width of less than 50 nm are created in the substrate. The presence of the nano-scale voids in a dielectric material lowers the dielectric constant, k, of the original dielectric material. In accordance with an aspect of the present invention, the inventive resist polymer comprises a copolymer that includes a first monomer unit (A) that contains a Si-containing component, and a second monomer unit (B) that contains an organic component, wherein said two monomer units (A and B) have different etch rates.
摘要翻译：提供具有位于其中的纳米级图案的抗蚀剂聚合物，其为沿与其主表面（顶部和底部）基本垂直的方向取向的亚光刻中空孔（或开口）的形式。具有纳米尺度图案的这种抗蚀剂聚合物被用作将纳米尺度图案转移到诸如介电材料的下层基底的蚀刻掩模。在将纳米尺度图案转移到基底中之后，在基底中产生宽度小于50nm的纳米级空隙（或开口）。电介质材料中纳米尺度空隙的存在降低了原始电介质材料的介电常数k。根据本发明的一个方面，本发明的抗蚀剂聚合物包括包含含有含Si组分的第一单体单元（A）和含有有机组分的第二单体单元（B）的共聚物，其中所述两个单体单元（A和B）具有不同的蚀刻速率。

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