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1. 发明授权

US09316916B2 Method to mitigate resist pattern critical dimension variation in a double-exposure process 有权
标题翻译：减轻双曝光过程中抗蚀剂图案临界尺寸变化的方法
公开(公告)号：US09316916B2
公开(公告)日：2016-04-19
申请号：US12419403
申请日：2009-04-07
申请人： Kuang-Jung Chen , Wu-Song Huang , Wai-kin Li
发明人： Kuang-Jung Chen , Wu-Song Huang , Wai-kin Li
IPC分类号： G03F7/207 , G03F7/40 , G03F7/00 , G03F7/20 , G03F7/38
CPC分类号： G03F7/40 , G03F7/0035 , G03F7/2024 , G03F7/203 , G03F7/2041 , G03F7/38
摘要： A method to mitigate resist pattern critical dimension (CD) variation in a double-exposure process generally includes forming a photoresist layer over a substrate; exposing the photoresist layer to a first radiation; developing the photoresist layer to form a first pattern in the photoresist layer; forming a topcoat layer over the photoresist layer; exposing the topcoat layer and the photoresist layer to a second radiation; removing the topcoat layer; and developing the photoresist layer to form a second pattern in the photoresist layer.
摘要翻译：减轻双曝光工艺中抗蚀剂图案临界尺寸（CD）变化的方法通常包括在衬底上形成光致抗蚀剂层; 将光致抗蚀剂层暴露于第一辐射; 显影光致抗蚀剂层以在光致抗蚀剂层中形成第一图案; 在光致抗蚀剂层上形成顶涂层; 将顶涂层和光致抗蚀剂层暴露于第二辐射; 去除顶涂层; 并且在光致抗蚀剂层中显影光致抗蚀剂层以形成第二图案。

2. 发明授权

US07838198B2 Photoresist compositions and method for multiple exposures with multiple layer resist systems 有权
标题翻译：具有多层抗蚀剂体系的多次曝光的光刻胶组合物和方法
公开(公告)号：US07838198B2
公开(公告)日：2010-11-23
申请号：US11955451
申请日：2007-12-13
申请人： Kuang-Jung Chen , Wu-Song Huang , Wai-kin Li , Pushkara R. Varanasi
发明人： Kuang-Jung Chen , Wu-Song Huang , Wai-kin Li , Pushkara R. Varanasi
IPC分类号： G03F7/00 , G03F7/004 , G03F7/20 , G03F7/26 , G03F7/40
CPC分类号： G03F7/0045 , G03F7/0397 , G03F7/40
摘要： A method and a resist composition. The resist composition includes a polymer having repeating units having a lactone moiety, a thermal base generator capable of generating a base and a photosensitive acid generator. The polymer has the properties of being substantially soluble in a first solvent and becoming substantially insoluble after heating the polymer. The method includes forming a film of a photoresist including a polymer, a thermal base generator capable of releasing a base, a photosensitive acid generator, and a solvent. The film is patternwise imaged. The imaging includes exposing the film to radiation, resulting in producing an acid catalyst. The film is developed in an aqueous base, resulting in removing base-soluble regions and forming a patterned layer. The patterned layer is baked above the temperature, resulting in the thermal base generator releasing a base within the patterned layer and the patterned layer becoming insoluble in the solvent.
摘要翻译：一种方法和抗蚀剂组合物。抗蚀剂组合物包括具有内酯部分的重复单元的聚合物，能够产生碱的热碱发生剂和感光酸产生剂。聚合物具有基本上可溶于第一溶剂的性质，并且在加热聚合物之后变得基本上不溶。该方法包括形成包含聚合物的光致抗蚀剂膜，能够释放碱的热碱发生器，光敏酸产生剂和溶剂。该影片被图案化成像。成像包括将膜暴露于辐射，导致产生酸催化剂。该膜在水性碱中显影，导致去除碱溶性区域并形成图案层。图案化层被烘烤高于该温度，导致热基发生器释放图案化层内的基底并且图案化层变得不溶于溶剂。

3. 发明申请

US20090142704A1 METHOD FOR REDUCING SIDE LOBE PRINTING USING A BARRIER LAYER 有权
标题翻译：使用障碍层减少侧面印刷的方法
公开(公告)号：US20090142704A1
公开(公告)日：2009-06-04
申请号：US11949190
申请日：2007-12-03
申请人： Kuang-Jung Chen , Wu-Song Huang , Wai-kin Li
发明人： Kuang-Jung Chen , Wu-Song Huang , Wai-kin Li
IPC分类号： G03F7/00
CPC分类号： G03F7/095
摘要： A method suitable for reducing side lobe printing in a photolithography process is enabled by the use of a barrier layer on top of a photoresist on a substrate. The barrier layer is absorbing at the imaging wavelength of the underlying photoresist and thus blocks the light from reaching the photoresist. A first exposure followed by a development in an aqueous base solution selectively removes a portion of the barrier layer to reveal a section of the underlying photoresist layer. At least a portion of the revealed section of the photoresist layer is then exposed and developed to form a patterned structure in the photoresist layer. The barrier layer can also be bleachable upon exposure and bake in the present invention.
摘要翻译：通过在基板上的光致抗蚀剂的顶部上使用阻挡层，能够实现在光刻工艺中减少旁瓣印刷的方法。阻挡层在下面的光致抗蚀剂的成像波长处吸收，从而阻挡光到达光致抗蚀剂。第一曝光随后在碱性水溶液中显影，选择性地除去阻挡层的一部分以露出下面的光致抗蚀剂层的一部分。然后将光致抗蚀剂层的显露部分的至少一部分曝光和显影以在光致抗蚀剂层中形成图案化结构。在本发明中曝光和烘烤时，阻挡层也可以是可漂白的。

4. 发明授权

US08268542B2 Method for reducing side lobe printing using a barrier layer 有权
标题翻译：使用阻挡层减少旁瓣印刷的方法
公开(公告)号：US08268542B2
公开(公告)日：2012-09-18
申请号：US11949190
申请日：2007-12-03
申请人： Kuang-Jung Chen , Wu-Song Huang , Wai-kin Li
发明人： Kuang-Jung Chen , Wu-Song Huang , Wai-kin Li
IPC分类号： G03F7/26
CPC分类号： G03F7/095
摘要： A method suitable for reducing side lobe printing in a photolithography process is enabled by the use of a barrier layer on top of a photoresist on a substrate. The barrier layer is absorbing at the imaging wavelength of the underlying photoresist and thus blocks the light from reaching the photoresist. A first exposure followed by a development in an aqueous base solution selectively removes a portion of the barrier layer to reveal a section of the underlying photoresist layer. At least a portion of the revealed section of the photoresist layer is then exposed and developed to form a patterned structure in the photoresist layer. The barrier layer can also be bleachable upon exposure and bake in the present invention.
摘要翻译：通过在基板上的光致抗蚀剂的顶部上使用阻挡层，能够实现在光刻工艺中减少旁瓣印刷的方法。阻挡层在下面的光致抗蚀剂的成像波长处吸收，从而阻挡光到达光致抗蚀剂。第一曝光随后在碱性水溶液中显影，选择性地除去阻挡层的一部分以露出下面的光致抗蚀剂层的一部分。然后将光致抗蚀剂层的显露部分的至少一部分曝光和显影以在光致抗蚀剂层中形成图案化结构。在本发明中曝光和烘烤时，阻挡层也可以是可漂白的。

5. 发明授权

US07838200B2 Photoresist compositions and method for multiple exposures with multiple layer resist systems 有权
公开(公告)号：US07838200B2
公开(公告)日：2010-11-23
申请号：US12356187
申请日：2009-01-20
申请人： Kuang-Jung Chen , Wu-Song Huang , Wai-kin Li , Pushkara R. Varanasi , Sen Liu
发明人： Kuang-Jung Chen , Wu-Song Huang , Wai-kin Li , Pushkara R. Varanasi , Sen Liu
IPC分类号： G03F7/00 , G03F7/004 , G03F7/20 , G03F7/26 , G03F7/40
CPC分类号： G03F7/0045 , G03F7/0035 , G03F7/0397 , G03F7/40
摘要： A method and a resist composition. The resist composition includes a polymer having repeating units having a lactone moiety, a thermal base generator capable of generating a base and a photosensitive acid generator. The polymer has the properties of being substantially soluble in a first solvent and becoming substantially insoluble after heating the polymer. The method includes forming a film of a photoresist including a polymer, a thermal base generator capable of releasing a base, a photosensitive acid generator, and a solvent. The film is patternwise imaged. The imaging includes exposing the film to radiation, resulting in producing an acid catalyst. The film is developed in an aqueous base, resulting in removing base-soluble regions and forming a patterned layer. The patterned layer is baked above the temperature, resulting in the thermal base generator releasing a base within the patterned layer and the patterned layer becoming insoluble in the solvent.

6. 发明申请

US20090155718A1 PHOTORESIST COMPOSITIONS AND METHOD FOR MULTIPLE EXPOSURES WITH MULTIPLE LAYER RESIST SYSTEMS 有权
公开(公告)号：US20090155718A1
公开(公告)日：2009-06-18
申请号：US11955451
申请日：2007-12-13
申请人： Kuang-Jung Chen , Wu-Song Huang , Wai-kin Li , Pushkara R. Varanasi
发明人： Kuang-Jung Chen , Wu-Song Huang , Wai-kin Li , Pushkara R. Varanasi
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/0045 , G03F7/0397 , G03F7/40
摘要： A method and a resist composition. The resist composition includes a polymer having repeating units having a lactone moiety, a thermal base generator capable of generating a base and a photosensitive acid generator. The polymer has the properties of being substantially soluble in a first solvent and becoming substantially insoluble after heating the polymer. The method includes forming a film of a photoresist including a polymer, a thermal base generator capable of releasing a base, a photosensitive acid generator, and a solvent. The film is patternwise imaged. The imaging includes exposing the film to radiation, resulting in producing an acid catalyst. The film is developed in an aqueous base, resulting in removing base-soluble regions and forming a patterned layer. The patterned layer is baked above the temperature, resulting in the thermal base generator releasing a base within the patterned layer and the patterned layer becoming insoluble in the solvent.

7. 发明授权

US08158014B2 Multi-exposure lithography employing differentially sensitive photoresist layers 有权
标题翻译：使用差分敏感光刻胶层的多曝光光刻
公开(公告)号：US08158014B2
公开(公告)日：2012-04-17
申请号：US12139722
申请日：2008-06-16
申请人： Wu-Song Huang , Wai-kin Li , Ping-Chuan Wang
发明人： Wu-Song Huang , Wai-kin Li , Ping-Chuan Wang
IPC分类号： C03C15/00 , H01L21/31
CPC分类号： G03F7/70466 , Y10S438/947 , Y10S438/948 , Y10T428/24802
摘要： A stack of a second photoresist having a second photosensitivity and a first photoresist having a first photosensitivity, which is greater than second photosensitivity, is formed on a substrate. A first pattern is formed in the first photoresist by a first exposure and a first development, while the second photoresist underneath remains intact. A second pattern comprising an array of lines is formed in the second photoresist. An exposed portion of the second photoresist underneath a remaining portion of the first photoresist forms a narrow portion of a line pattern, while an exposed portion of the second photoresist outside the area of the remaining portions of the photoresist forms a wide portion of the line pattern. Each wide portion of the line pattern forms a bulge in the second pattern, which increases overlay tolerance between the second pattern and the pattern of conductive vias.
摘要翻译：在基板上形成具有第二感光性的第二光致抗蚀剂的叠层和具有大于第二光敏性的第一光敏性的第一光致抗蚀剂。通过第一曝光和第一显影在第一光致抗蚀剂中形成第一图案，而下面的第二光致抗蚀剂保持完整。在第二光致抗蚀剂中形成包括线阵列的第二图案。在第一光致抗蚀剂的剩余部分下面的第二光致抗蚀剂的暴露部分形成线图案的窄部分，而在光致抗蚀剂的剩余部分的区域外部的第二光致抗蚀剂的暴露部分形成线图案的宽部分。线图案的每个宽部分在第二图案中形成凸起，这增加了第二图案和导电通孔图案之间的覆盖公差。

8. 发明申请

US20090311491A1 MULTI-EXPOSURE LITHOGRAPHY EMPLOYING DIFFERENTIALLY SENSITIVE PHOTORESIST LAYERS 有权
标题翻译：使用差分感光层的多次曝光光刻
公开(公告)号：US20090311491A1
公开(公告)日：2009-12-17
申请号：US12139722
申请日：2008-06-16
申请人： Wu-Song Huang , Wai-kin Li , Ping-Chuan Wang
发明人： Wu-Song Huang , Wai-kin Li , Ping-Chuan Wang
IPC分类号： G03F7/20 , B32B5/00
CPC分类号： G03F7/70466 , Y10S438/947 , Y10S438/948 , Y10T428/24802
摘要： A stack of a second photoresist having a second photosensitivity and a first photoresist having a first photosensitivity, which is greater than second photosensitivity, is formed on a substrate. A first pattern is formed in the first photoresist by a first exposure and a first development, while the second photoresist underneath remains intact. A second pattern comprising an array of lines is formed in the second photoresist. An exposed portion of the second photoresist underneath a remaining portion of the first photoresist forms a narrow portion of a line pattern, while an exposed portion of the second photoresist outside the area of the remaining portions of the photoresist forms a wide portion of the line pattern. Each wide portion of the line pattern forms a bulge in the second pattern, which increases overlay tolerance between the second pattern and the pattern of conductive vias.
摘要翻译：在基板上形成具有第二感光性的第二光致抗蚀剂的叠层和具有大于第二光敏性的第一光敏性的第一光致抗蚀剂。通过第一曝光和第一显影在第一光致抗蚀剂中形成第一图案，而下面的第二光致抗蚀剂保持完整。在第二光致抗蚀剂中形成包括线阵列的第二图案。在第一光致抗蚀剂的剩余部分下面的第二光致抗蚀剂的暴露部分形成线图案的窄部分，而在光致抗蚀剂的剩余部分的区域外部的第二光致抗蚀剂的暴露部分形成线图案的宽部分。线图案的每个宽部分在第二图案中形成凸起，这增加了第二图案和导电通孔图案之间的覆盖公差。

9. 发明申请

US20120156450A1 MULTI-EXPOSURE LITHOGRAPHY EMPLOYING DIFFERENTIALLY SENSITIVE PHOTORESIST LAYERS 审中-公开
标题翻译：使用差分感光层的多次曝光光刻
公开(公告)号：US20120156450A1
公开(公告)日：2012-06-21
申请号：US13406965
申请日：2012-02-28
申请人： Wu-Song Huang , Wai-kin Li , Ping-Chuan Wang
发明人： Wu-Song Huang , Wai-kin Li , Ping-Chuan Wang
IPC分类号： B32B3/00
CPC分类号： G03F7/70466 , Y10S438/947 , Y10S438/948 , Y10T428/24802
摘要： A stack of a second photoresist having a second photosensitivity and a first photoresist having a first photosensitivity, which is greater than second photosensitivity, is formed on a substrate. A first pattern is formed in the first photoresist by a first exposure and a first development, while the second photoresist underneath remains intact. A second pattern comprising an array of lines is formed in the second photoresist. An exposed portion of the second photoresist underneath a remaining portion of the first photoresist forms a narrow portion of a line pattern, while an exposed portion of the second photoresist outside the area of the remaining portions of the photoresist forms a wide portion of the line pattern. Each wide portion of the line pattern forms a bulge in the second pattern, which increases overlay tolerance between the second pattern and the pattern of conductive vias.
摘要翻译：在基板上形成具有第二感光性的第二光致抗蚀剂的叠层和具有大于第二光敏性的第一光敏性的第一光致抗蚀剂。通过第一曝光和第一显影在第一光致抗蚀剂中形成第一图案，而下面的第二光致抗蚀剂保持完整。在第二光致抗蚀剂中形成包括线阵列的第二图案。在第一光致抗蚀剂的剩余部分下面的第二光致抗蚀剂的暴露部分形成线图案的窄部分，而在光致抗蚀剂的剩余部分的区域外的第二光致抗蚀剂的暴露部分形成线图案的宽部分。线图案的每个宽部分在第二图案中形成凸起，这增加了第二图案和导电通孔图案之间的覆盖公差。

10. 发明授权

US07696085B2 Dual damascene metal interconnect structure having a self-aligned via 有权
标题翻译：具有自对准通孔的双镶嵌金属互连结构
公开(公告)号：US07696085B2
公开(公告)日：2010-04-13
申请号：US12034122
申请日：2008-02-20
申请人： Wai-kin Li , Haining S. Yang
发明人： Wai-kin Li , Haining S. Yang
IPC分类号： H01L21/4763
CPC分类号： H01L21/31144 , H01L21/0337 , H01L21/0338 , H01L21/76811 , H01L21/76813 , H01L21/76816
摘要： A recessed region containing a line portion and a bulge portion is formed in a hard mask layer. Self-assembling block copolymers containing two or more different polymeric block components that are immiscible with one another are applied within the recessed region and annealed. A cylindrical polymeric block centered at the bulge portion is removed selective to a polymeric block matrix surrounding the cylindrical polymeric block. A via cavity is formed by transferring the cavity formed by removal of the cylindrical polymeric block into a dielectric layer. The pattern in the hard mask layer is subsequently transferred into the dielectric layer to form a line cavity. A metal via and a metal line are formed by deposition and planarization of metal. The metal via is self-aligned to the metal line.
摘要翻译：在硬掩模层中形成包含线部分和凸起部分的凹陷区域。包含彼此不混溶的两种或更多种不同的聚合物嵌段组分的自组装嵌段共聚物被施加在凹陷区域内并退火。以凸出部分为中心的圆柱形聚合物块被选择性地除去围绕圆柱形聚合物嵌段的聚合物嵌段基体。通过将通过将圆柱形聚合物块除去形成的空腔转移到电介质层中而形成通孔。随后将硬掩模层中的图案转移到电介质层中以形成线腔。通过金属的沉积和平坦化形成金属通孔和金属线。金属通孔与金属线自对准。

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