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1. 发明授权

US08617791B2 Fluorine-free fused ring heteroaromatic photoacid generators and resist compositions containing the same 有权
公开(公告)号：US08617791B2
公开(公告)日：2013-12-31
申请号：US13614561
申请日：2012-09-13
申请人： Sen Liu , Pushkara R. Varanasi
发明人： Sen Liu , Pushkara R. Varanasi
IPC分类号： G03F7/028 , G03F7/26 , C07C309/06 , C07C309/26
CPC分类号： G03F7/004 , C07C309/25 , C07C309/26 , C07D209/04 , C07D261/20 , C07D277/62 , C07D307/82 , G03F7/0045 , G03F7/028 , G03F7/029 , G03F7/0382 , G03F7/0392 , Y10S430/121 , Y10S430/122 , Y10S430/123 , Y10S430/126
摘要： The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by the presence of an onium cationic component and a fluorine-free fused ring heteroaromatic sulfonate anionic component containing one or more electron withdrawing substituents. The onium cationic component of the PAG is preferably a sulfonium or an iodonium cation. The photoresist composition further contains an acid sensitive imaging polymer. The photoresist composition is especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.

2. 发明申请

US20130017490A1 FLUORINE-FREE FUSED RING HETEROAROMATIC PHOTOACID GENERATORS AND RESIST COMPOSITIONS CONTAINING THE SAME 有权
公开(公告)号：US20130017490A1
公开(公告)日：2013-01-17
申请号：US13617623
申请日：2012-09-14
申请人： Sen Liu , Pushkara R. Varanasi
发明人： Sen Liu , Pushkara R. Varanasi
IPC分类号： C07D333/62 , G03F7/20 , C07D277/76 , G03F7/027
CPC分类号： G03F7/004 , C07C309/25 , C07C309/26 , C07D209/04 , C07D261/20 , C07D277/62 , C07D307/82 , G03F7/0045 , G03F7/028 , G03F7/029 , G03F7/0382 , G03F7/0392 , Y10S430/121 , Y10S430/122 , Y10S430/123 , Y10S430/126
摘要： The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by the presence of an onium cationic component and a fluorine-free fused ring heteroaromatic sulfonate anionic component containing one or more electron withdrawing substituents. The onium cationic component of the PAG is preferably a sulfonium or an iodonium cation. The photoresist composition further contains an acid sensitive imaging polymer. The photoresist composition is especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.

3. 发明授权

US08293451B2 Near-infrared absorbing film compositions 有权
标题翻译：近红外吸收膜组合物
公开(公告)号：US08293451B2
公开(公告)日：2012-10-23
申请号：US12543003
申请日：2009-08-18
申请人： Martin Glodde , Dario L. Goldfarb , Wu-Song Huang , Wai-Kin Li , Sen Liu , Pushkara R. Varanasi , Libor Vyklicky
发明人： Martin Glodde , Dario L. Goldfarb , Wu-Song Huang , Wai-Kin Li , Sen Liu , Pushkara R. Varanasi , Libor Vyklicky
IPC分类号： G03F7/00 , G03F7/004 , G03F7/028
CPC分类号： G03F7/091 , G03F9/7026
摘要： A curable liquid formulation containing at least (i) one or more near-infrared absorbing triphenylamine-based dyes, and (ii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.
摘要翻译：包含至少（i）一种或多种近红外吸收性三苯胺类染料的可固化液体制剂，和（ii）一种或多种浇铸溶剂。本发明还涉及由可固化液体制剂的交联形式组成的固体近红外吸收膜。本发明还涉及一种含有固体近红外线吸收膜的涂层的微电子衬底，以及在近红外吸收膜位于微电子衬底之间的情况下，用于图案化涂覆在微电子衬底上的光刻胶层的方法和光刻胶膜。

4. 发明申请

US20120178027A1 MULTIPLE EXPOSURE PHOTOLITHOGRAPHY METHODS 有权
标题翻译：多次曝光光刻法
公开(公告)号：US20120178027A1
公开(公告)日：2012-07-12
申请号：US13418421
申请日：2012-03-13
申请人： Kuang-Jung Chen , Wu-Song Huang , Ranee Wai-Ling Kwong , Sen Liu , Pushkara R. Varanasi
发明人： Kuang-Jung Chen , Wu-Song Huang , Ranee Wai-Ling Kwong , Sen Liu , Pushkara R. Varanasi
IPC分类号： G03F7/20
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/095 , G03F7/20 , G03F7/2022 , G03F7/30 , G03F7/38 , G03F7/70466 , Y10S430/12
摘要： A method. The method forms a film of photoresist composition on a substrate and exposes a first and second region of the film to radiation through a first and second mask having a first and second image pattern, respectively. The photoresist composition includes a polymer including labile group(s), base soluble group(s), a photosensitive acid generator, and a photosensitive base generator. The photosensitive acid generator generates first and second amounts of acid upon exposure to first and second doses of radiation, respectively. The second amount of acid exceeds the first amount of acid. The second dose of radiation exceeds the first dose of radiation. The photosensitive base generator generates a first and second amount of base upon exposure to the first and second dose of radiation, respectively. The first amount of base exceeds the first amount of acid. The second amount of acid exceeds the second amount of base.
摘要翻译：一个方法。该方法在衬底上形成光致抗蚀剂组合物的膜，并分别通过具有第一和第二图像图案的第一和第二掩模使膜的第一和第二区域暴露于辐射。光致抗蚀剂组合物包括包含不稳定基团，碱溶性基团，光敏酸发生剂和感光基底发生剂的聚合物。感光酸发生器分别在暴露于第一和第二剂量的辐射时产生第一和第二量的酸。第二量的酸超过第一量的酸。第二剂辐射超过第一剂量的辐射。光敏底物发生器分别在暴露于第一和第二剂量的辐射时产生第一和第二量的碱。碱的第一量超过第一量的酸。第二量的酸超过第二量的碱。

5. 发明授权

US07608390B2 Top antireflective coating composition containing hydrophobic and acidic groups 有权
标题翻译：顶级抗反射涂料组合物含有疏水和酸性基团
公开(公告)号：US07608390B2
公开(公告)日：2009-10-27
申请号：US11462527
申请日：2006-08-04
申请人： Mahmoud Khojasteh , Wu-Song Huang , Margaret C. Lawson , Kaushal S. Patel , Irene Popova , Pushkara R. Varanasi
发明人： Mahmoud Khojasteh , Wu-Song Huang , Margaret C. Lawson , Kaushal S. Patel , Irene Popova , Pushkara R. Varanasi
IPC分类号： G03F7/40 , G03F7/11
CPC分类号： G03F7/091 , G03F7/0046 , Y10S438/952
摘要： The present invention discloses a composition suitable for use as a top antireflective coating and barrier layer for immersion lithography. The inventive composition is soluble in aqueous base solutions and insoluble in water. The inventive composition comprises a polymer having at least one hydrophobic moiety, at least one acidic moiety with a pKa of 1 or less, and at least one aqueous base soluble moiety. The present invention also discloses a method of forming a patterned layer on a substrate by using the inventive composition in lithography.
摘要翻译：本发明公开了一种适合用作浸没式光刻的顶部抗反射涂层和阻挡层的组合物。本发明的组合物可溶于碱性水溶液并且不溶于水。本发明的组合物包含具有至少一个疏水部分，至少一个pKa为1或更小的酸性部分和至少一种碱可溶性部分的聚合物。本发明还公开了通过在光刻中使用本发明的组合物在衬底上形成图案化层的方法。

6. 发明授权

US07544750B2 Top antireflective coating composition with low refractive index at 193nm radiation wavelength 有权
$Top antireflective coating composition with low refractive index at 193nm radiation wavelength$
标题翻译：顶部抗反射涂层组合物，在193nm辐射波长下具有低折射率
公开(公告)号：US07544750B2
公开(公告)日：2009-06-09
申请号：US11249693
申请日：2005-10-13
申请人： Wu-Song S. Huang , William H. Heath , Kaushal S. Patel , Pushkara R. Varanasi
发明人： Wu-Song S. Huang , William H. Heath , Kaushal S. Patel , Pushkara R. Varanasi
IPC分类号： G03F7/09
CPC分类号： G03F7/091 , Y10S438/952
摘要： Compositions characterized by the presence of an aqueous base-soluble polymer having aromatic moieties and a refractive index value n of less than 1.5 with respect to a radiation wavelength of 193 nm have been found which are especially useful as top antireflective coatings in 193 nm dry lithographic processes. Polymers with an ethylenic backbone and having fluorine and sulfonic acid moieties have been found to be especially useful. The compositions enable top reflection control at 193 nm while providing ease of use by virtue of their solubility in aqueous alkaline developer solutions.
摘要翻译：已经发现特征在于具有相对于193nm的辐射波长的具有芳族部分和折射率值n小于1.5的水溶性基团可溶性聚合物的组合物，其特别可用作193nm干法光刻中的顶部抗反射涂层过程。已经发现具有乙烯主链并具有氟和磺酸部分的聚合物是特别有用的。该组合物能够在193nm的顶部反射控制，同时通过其在含水碱性显影剂溶液中的溶解度而提供易于使用。

7. 发明申请

US20080026315A1 FLUORINATED HALF ESTER OF MALEIC ANHYDRIDE POLYMERS FOR DRY 193 NM TOP ANTIREFLECTIVE COATING APPLICATION 失效
标题翻译：用于干燥193 NM顶级抗反射涂层应用的马来酸酐聚合物的氟化半酯
公开(公告)号：US20080026315A1
公开(公告)日：2008-01-31
申请号：US11425529
申请日：2006-06-21
申请人： Wu-Song S. Huang , Wenjie Li , Pushkara R. Varanasi
发明人： Wu-Song S. Huang , Wenjie Li , Pushkara R. Varanasi
IPC分类号： G03C1/00
CPC分类号： G03F7/091 , G03F7/0046 , G03F7/0752 , Y10S438/952
摘要： The present invention discloses a composition suitable for use as a top antireflective coating and barrier layer for 193 nm lithography. The inventive composition is soluble in aqueous base solutions and has low refractive index at 193 nm. The inventive composition comprises an aqueous base-soluble polymer having a backbone and a fluorinated half ester moiety. The fluorinated half ester moiety is pendant from the backbone. The present invention also discloses a method of forming a patterned layer on a substrate by using the inventive composition in lithography.
摘要翻译：本发明公开了适合用作193nm光刻的顶部抗反射涂层和阻挡层的组合物。本发明的组合物可溶于碱性水溶液中，并且在193nm具有低折射率。本发明的组合物包含具有主链和氟化半酯部分的水溶性基团可溶性聚合物。氟化半酯部分是从骨架侧挂。本发明还公开了通过在光刻中使用本发明的组合物在衬底上形成图案化层的方法。

8. 发明授权

US07235342B2 Negative photoresist composition including non-crosslinking chemistry 有权
标题翻译：负光致抗蚀剂组合物包括非交联化学
公开(公告)号：US07235342B2
公开(公告)日：2007-06-26
申请号：US10766058
申请日：2004-01-28
申请人： Wenjie Li , Pushkara R. Varanasi
发明人： Wenjie Li , Pushkara R. Varanasi
IPC分类号： G03F7/038 , G03F7/30
CPC分类号： G03F7/0382 , G03F7/0046 , Y10S430/106 , Y10S430/111 , Y10S430/115 , Y10S430/128
摘要： A negative photoresist composition and a method of patterning a substrate through use of the negative photoresist composition. The composition includes: a radiation sensitive acid generator; a hydroxy-containing additive; and a resist polymer derived from at least one first monomer. The resist polymer may be further derived from a second monomer having an aqueous base soluble moiety. The hydroxy-containing additive has the structure of Q—OH, where Q may include one or more cyclic structures. Q—OH may have a primary alcohol structure. The acid generator is adapted to generate an acid upon exposure to radiation. The resist polymer is adapted to chemically react with the additive in the presence of the acid to generate a non-crosslinking reaction product that is insoluble in an aqueous alkaline developer solution.
摘要翻译：负性光致抗蚀剂组合物和通过使用负性光致抗蚀剂组合物构图基板的方法。组合物包括：辐射敏感酸发生剂; 含羟基的添加剂; 和衍生自至少一种第一单体的抗蚀剂聚合物。抗蚀剂聚合物可以进一步衍生自具有碱性水溶性部分的第二单体。含羟基的添加剂具有Q-OH的结构，其中Q可以包括一个或多个环状结构。 Q-OH可以具有伯醇结构。酸产生器适于在暴露于辐射时产生酸。抗蚀剂聚合物适于在酸存在下与添加剂发生化学反应以产生不溶于碱性显影剂水溶液的非交联反应产物。

9. 发明授权

US08871429B2 Fluorine-free fused ring heteroaromatic photoacid generators and resist compositions containing the same 有权
公开(公告)号：US08871429B2
公开(公告)日：2014-10-28
申请号：US13617781
申请日：2012-09-14
申请人： Sen Liu , Pushkara R. Varanasi
发明人： Sen Liu , Pushkara R. Varanasi
IPC分类号： G03F7/004 , G03F7/028 , G03F7/26 , C07C309/25 , C07C309/26 , C07D277/62 , G03F7/029 , C07D209/04 , G03F7/039 , G03F7/038 , C07D261/20 , C07D307/82
CPC分类号： G03F7/004 , C07C309/25 , C07C309/26 , C07D209/04 , C07D261/20 , C07D277/62 , C07D307/82 , G03F7/0045 , G03F7/028 , G03F7/029 , G03F7/0382 , G03F7/0392 , Y10S430/121 , Y10S430/122 , Y10S430/123 , Y10S430/126
摘要： The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by the presence of an onium cationic component and a fluorine-free fused ring heteroaromatic sulfonate anionic component containing one or more electron withdrawing substituents. The onium cationic component of the PAG is preferably a sulfonium or an iodonium cation. The photoresist composition further contains an acid sensitive imaging polymer. The photoresist composition is especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.

10. 发明授权

US08741545B2 Fluorine-free fused ring heteroaromatic photoacid generators and resist compositions containing the same 有权
公开(公告)号：US08741545B2
公开(公告)日：2014-06-03
申请号：US13617623
申请日：2012-09-14
申请人： Sen Liu , Pushkara R. Varanasi
发明人： Sen Liu , Pushkara R. Varanasi
IPC分类号： G03F7/004 , G03F7/028 , G03F7/26 , C07C309/25 , C07C209/26 , C07D261/20
CPC分类号： G03F7/004 , C07C309/25 , C07C309/26 , C07D209/04 , C07D261/20 , C07D277/62 , C07D307/82 , G03F7/0045 , G03F7/028 , G03F7/029 , G03F7/0382 , G03F7/0392 , Y10S430/121 , Y10S430/122 , Y10S430/123 , Y10S430/126
摘要： The present invention relates to a fluorine-free photoacid generator (PAG) and a photoresist composition containing the same. The PAG is characterized by the presence of an onium cationic component and a fluorine-free fused ring heteroaromatic sulfonate anionic component containing one or more electron withdrawing substituents. The onium cationic component of the PAG is preferably a sulfonium or an iodonium cation. The photoresist composition further contains an acid sensitive imaging polymer. The photoresist composition is especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.

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