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    • 7. 发明授权
    • Optical exposure method
    • 光学曝光方法
    • US06420094B1
    • 2002-07-16
    • US09500527
    • 2000-02-09
    • Tamae HarukiKenji NakagawaSatoru AsaiIsamu Hanyu
    • Tamae HarukiKenji NakagawaSatoru AsaiIsamu Hanyu
    • G03F720
    • G03F7/70566G03F7/201G03F7/70091G03F7/701G03F7/70125G03F7/70241G03F7/70283G03F7/70583
    • An optical exposure method in photolithography applied for precise processing when semiconductor devices are produced. A pattern on a photomask is projected and exposed on a register on a base plate with an exposure device including a deformation illumination system, a photomask and a projection lens. The deformation illumination system is composed of a light source, a diaphragm and a condenser lens, and the diaphragm is provided with a linear through-hole. The optical exposure method uses a ray of linear light for illumination or two rays of linear light for illumination that are parallel with the pattern. The two rays of linear light are symmetrical with respect to an optical axis. These rays are parallel with the pattern in a position separate from the optical axis of the exposure device when the photomask pattern is a line and space pattern.
    • 在制造半导体器件时,用于精密加工的光刻中的光学曝光方法。 光掩模上的图案被投影并暴露在具有包括变形照明系统,光掩模和投影透镜的曝光装置的基板上的寄存器上。 变形照明系统由光源,光阑和聚光透镜组成,隔膜设有直线通孔。 光学曝光方法使用用于照明的线性光线或与图案平行的用于照明的两束线性光。 两条线性光线相对于光轴对称。 当光掩模图案是线和空间图案时,这些光线与图案平行于与曝光装置的光轴分离的位置。