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1. 发明授权

US5465220A Optical exposure method 失效
公开(公告)号：US5465220A
公开(公告)日：1995-11-07
申请号：US69853
申请日：1993-06-01
申请人： Tamae Haruki , Kenji Nakagawa , Masao Taguchi , Hiroyuki Tanaka , Satoru Asai , Isamu Hanyu
发明人： Tamae Haruki , Kenji Nakagawa , Masao Taguchi , Hiroyuki Tanaka , Satoru Asai , Isamu Hanyu
IPC分类号： G03F7/20 , G03F7/207 , G06F9/00
CPC分类号： G03F7/70566 , G03F7/201 , G03F7/70091 , G03F7/701 , G03F7/70125 , G03F7/70241 , G03F7/70283 , G03F7/70583
摘要： An optical exposure method in photolithography applied for precise processing when semiconductor devices are produced. A pattern on a photomask is projected and exposed on a register on a base plate with an exposure device including a deformation illumination system, a photomask and a projection lens. The deformation illumination system is composed of a light source, a diaphragm and a condenser lens, and the diaphragm is provided with a linear through-hole. The optical exposure method uses a ray of linear light for illumination or two rays of linear light for illumination that are parallel with the pattern. The two rays of linear light are symmetrical with respect to an optical axis. These rays are parallel with the pattern in a position separate from the optical axis of the exposure device when the photomask pattern is a line and space pattern.

2. 发明授权

US06420094B1 Optical exposure method 失效
标题翻译：光学曝光方法
公开(公告)号：US06420094B1
公开(公告)日：2002-07-16
申请号：US09500527
申请日：2000-02-09
申请人： Tamae Haruki , Kenji Nakagawa , Satoru Asai , Isamu Hanyu
发明人： Tamae Haruki , Kenji Nakagawa , Satoru Asai , Isamu Hanyu
IPC分类号： G03F720
CPC分类号： G03F7/70566 , G03F7/201 , G03F7/70091 , G03F7/701 , G03F7/70125 , G03F7/70241 , G03F7/70283 , G03F7/70583
摘要： An optical exposure method in photolithography applied for precise processing when semiconductor devices are produced. A pattern on a photomask is projected and exposed on a register on a base plate with an exposure device including a deformation illumination system, a photomask and a projection lens. The deformation illumination system is composed of a light source, a diaphragm and a condenser lens, and the diaphragm is provided with a linear through-hole. The optical exposure method uses a ray of linear light for illumination or two rays of linear light for illumination that are parallel with the pattern. The two rays of linear light are symmetrical with respect to an optical axis. These rays are parallel with the pattern in a position separate from the optical axis of the exposure device when the photomask pattern is a line and space pattern.
摘要翻译：在制造半导体器件时，用于精密加工的光刻中的光学曝光方法。光掩模上的图案被投影并暴露在具有包括变形照明系统，光掩模和投影透镜的曝光装置的基板上的寄存器上。变形照明系统由光源，光阑和聚光透镜组成，隔膜设有直线通孔。光学曝光方法使用用于照明的线性光线或与图案平行的用于照明的两束线性光。两条线性光线相对于光轴对称。当光掩模图案是线和空间图案时，这些光线与图案平行于与曝光装置的光轴分离的位置。

3. 发明授权

US5607821A Optical exposure method 失效
标题翻译：光学曝光方法
公开(公告)号：US5607821A
公开(公告)日：1997-03-04
申请号：US510128
申请日：1995-08-01
申请人： Tamae Haruki , Kenji Nakagawa , Masao Taguchi , Hiroyuki Tanaka , Satoru Asai , Isamu Hanyu
发明人： Tamae Haruki , Kenji Nakagawa , Masao Taguchi , Hiroyuki Tanaka , Satoru Asai , Isamu Hanyu
IPC分类号： G03F7/20 , G03F7/207 , G03C5/04 , G03B27/32 , G03B27/68 , G03B27/72
CPC分类号： G03F7/70566 , G03F7/201 , G03F7/70091 , G03F7/701 , G03F7/70125 , G03F7/70241 , G03F7/70283 , G03F7/70583
摘要： An optical exposure method in photolithography applied for precise processing when semiconductor devices are produced. A pattern on a photomask is projected and exposed on a register on a base plate with an exposure device including a deformation illumination system, a photomask and a projection lens. The deformation illumination system is composed of a light source, a diaphragm and a condenser lens, and the diaphragm is provided with a linear through-hole. The optical exposure method uses a ray of linear light for illumination or two rays of linear light for illumination that are parallel with the pattern. The two rays of linear light are symmetrical with respect to an optical axis. These rays are parallel with the pattern in a position separate from the optical axis of the exposure device when the photomask pattern is a line and space pattern.
摘要翻译：在制造半导体器件时，用于精密加工的光刻中的光学曝光方法。光掩模上的图案被投影并暴露在具有包括变形照明系统，光掩模和投影透镜的曝光装置的基板上的寄存器上。变形照明系统由光源，光阑和聚光透镜组成，隔膜设有直线通孔。光学曝光方法使用用于照明的线性光线或与图案平行的用于照明的两束线性光。两条线性光线相对于光轴对称。当光掩模图案是线和空间图案时，这些光线与图案平行于与曝光装置的光轴分离的位置。

4. 发明授权

US06045976A Optical exposure method 失效
公开(公告)号：US06045976A
公开(公告)日：2000-04-04
申请号：US734790
申请日：1996-10-25
申请人： Tamae Haruki , Kenji Nakagawa , Masao Taguchi , Hiroyuki Tanaka , Satoru Asai , Isamu Hanyu
发明人： Tamae Haruki , Kenji Nakagawa , Masao Taguchi , Hiroyuki Tanaka , Satoru Asai , Isamu Hanyu
IPC分类号： G03F7/20 , G03F7/207 , G03C5/00 , G03F9/00
CPC分类号： G03F7/70566 , G03F7/201 , G03F7/70091 , G03F7/701 , G03F7/70125 , G03F7/70241 , G03F7/70283 , G03F7/70583
摘要： An optical exposure method in photolithography applied for precise processing when semiconductor devices are produced. A pattern on a photomask is projected and exposed on a register on a base plate with an exposure device including a deformation illumination system, a photomask and a projection lens. The deformation illumination system is composed of a light source, a diaphragm and a condenser lens, and the diaphragm is provided with a linear through-hole. The optical exposure method uses a ray of linear light for illumination or two rays of linear light for illumination that are parallel with the pattern. The two rays of linear light are symmetrical with respect to an optical axis. These rays are parallel with the pattern in a position separate from the optical axis of the exposure device when the photomask pattern is a line and space pattern.

5. 发明授权

US5418093A Projection exposure method and an optical mask for use in projection exposure 失效
标题翻译：投影曝光方法和用于投影曝光的光学掩模
公开(公告)号：US5418093A
公开(公告)日：1995-05-23
申请号：US201079
申请日：1994-02-24
申请人： Satoru Asai , Isamu Hanyu , Mitsuji Nunokawa
发明人： Satoru Asai , Isamu Hanyu , Mitsuji Nunokawa
IPC分类号： G03F1/00 , G03F7/20 , G03F9/00
CPC分类号： G03F7/70433 , G03F1/36
摘要： A projection exposure method includes the steps of (a) irradiating a light from a light source on an optical mask, where the optical mask includes a main space which transmits light and has a desired exposure pattern, and a subspace which transmits light and is provided adjacent to the main space, and (b) exposing a photoresist layer by the light which is transmitted through the optical mask via a lens so as to project an optical image of the main space, where the subspace has a narrow width such that the light transmitted through the subspace by itself does not expose the photosensitive layer.
摘要翻译：投影曝光方法包括以下步骤：（a）将来自光源的光照射在光学掩模上，其中光学掩模包括透光的主空间并具有期望的曝光图案，以及提供透光的子空间邻近主空间，和（b）通过透镜通过光掩模透射的光使光致抗蚀剂层曝光，以便投影主空间的光学图像，其中子空间具有窄的宽度，使得光透过子空间本身不会使感光层露出。

6. 发明授权

US5428478A Optical mask and exposure method using the optical mask 失效
标题翻译：光学掩模和使用光学掩模的曝光方法
公开(公告)号：US5428478A
公开(公告)日：1995-06-27
申请号：US118173
申请日：1993-09-09
申请人： Isamu Hanyu , Satoru Asai
发明人： Isamu Hanyu , Satoru Asai
IPC分类号： G02B27/44 , G03F1/30 , G03F1/68 , G03F1/80 , H01L21/027
CPC分类号： G03F1/30
摘要： An optical mask including a 2.pi.n phase shifter pattern, a .pi.(2n+1) phase shifter pattern, an intermediate phase shifter pattern which shifts the phase of an incident light by an angle between 2.pi.n and .pi.(2n+1), and a reversed intermediate phase shifter pattern which shifts the phase of an incident light by an angle being reversed by .pi. for the phase shift angle of the intermediate phase shifter pattern. The intermediate phase shifter patterns are formed in the vicinity of the reversed intermediate phase shifter patterns having light shielding films in between.
摘要翻译：包括2πn移相器图案，pi（2n + 1）移相器图案的光学掩模，将入射光的相位偏移2πn和pi（2n + 1）之间的角度的中间移相器图案，以及反转的中间移相器图案，其将入射光的相位以相对于中间移相器图案的相移角反转角度为π。中间移相器图案形成在其间具有遮光膜的反向中间移相器图案附近。

7. 发明授权

US5368963A Photomask and method of fabricating the same 失效
标题翻译：光掩模及其制造方法
公开(公告)号：US5368963A
公开(公告)日：1994-11-29
申请号：US916262
申请日：1992-07-21
申请人： Isamu Hanyu , Satoru Asai
发明人： Isamu Hanyu , Satoru Asai
IPC分类号： G03F1/28 , G03F1/68 , H01L21/027 , G03F9/00
CPC分类号： G03F1/30 , G03F1/28
摘要： A photomask comprises light shielding areas with a light shielding layer formed on a mask substrate, and a light transmitting area defined on the mask substrate by the light shielding areas, the light transmitting area being divided in a first area with a 90.degree. phase shifter formed thereon for shifting phase of transmitted light by 90.degree., a second area with a 270.degree. phase shifter formed thereon for shifting phase of transmitted light by 270.degree., and a third area with neither the 90.degree. phase shifter nor the 270.degree. phase shifter formed thereon, the first and the second areas being arranged without being overlapped on each other and with the light shielding areas or the third area located therebetween.
摘要翻译：光掩模包括在掩模基板上形成有遮光层的遮光区域和由遮光区域在掩模基板上限定的透光区域，透光区域被形成为在第一区域中形成90°移相器将透射光的相位移动90度，在其上形成270度移相器的第二区域，将透射光的相位移动270度，并且形成不具有90°移相器和270°移相器的第三区域第一和第二区域被布置成彼此不重叠，并且与遮光区域或位于它们之间的第三区域布置。

8. 发明授权

US5561010A Phase shift optical mask and method of correcting defects in optical mask 失效
标题翻译：相移光学掩模和校正光学掩模中的缺陷的方法
公开(公告)号：US5561010A
公开(公告)日：1996-10-01
申请号：US409942
申请日：1995-03-23
申请人： Isamu Hanyu , Satoru Asai
发明人： Isamu Hanyu , Satoru Asai
IPC分类号： G03F1/68 , G03F1/30 , G03F1/72 , H01L21/027 , G03F9/00
CPC分类号： G03F1/30 , G03F1/72
摘要： A phase shift optical mask is adapted to receive exposure light and is provided with a transparent substrate, a phase shifter shifting a phase of the exposure light with respect to the phase of the exposure light transmitted through the transparent substrate, and a transparent layer interposed between the transparent substrate and the phase shifter. The transparent layer shifts the phase of the exposure light by 90.degree.+180.degree..multidot.n and n is an integer.
摘要翻译：相移光学掩模适于接收曝光光，并且设置有透明基板，移相器相对于透过透明基板的曝光光的相位移动曝光光的相位，以及介于透明基板和移相器。透明层将曝光光的相位偏移90°-180°xn，n是整数。

9. 发明授权

US5876877A Patterned mask having a transparent etching stopper layer 失效
标题翻译：图案掩模具有透明蚀刻阻挡层
公开(公告)号：US5876877A
公开(公告)日：1999-03-02
申请号：US813387
申请日：1991-12-27
申请人： Isamu Hanyu , Mitsuji Nunokawa , Satoru Asai
发明人： Isamu Hanyu , Mitsuji Nunokawa , Satoru Asai
IPC分类号： G03F1/30 , G03F1/68 , G03F1/72 , H01L21/027 , G03F9/00
CPC分类号： G03F1/30 , G03F1/26 , G03F1/72
摘要： An optical exposure mask for patterning an optical beam comprises an etching stop layer of a material that is substantially transparent with respect to the optical beam, a transparent pattern provided on one of upper and lower major surfaces of the etching stop layer, and an opaque pattern provided on one of the upper and lower major surfaces of the etching stop layer for patterning the optical beam, wherein the material for the etching stop layer is selected from a group essentially consisted of Al.sub.2 O.sub.3, MgO and a mixture thereof, and the etching stop layer has an etching rate that is substantially smaller than the etching rate of a material forming the transparent pattern for any of dry and wet etching processes.
摘要翻译：用于图案化光束的光学曝光掩模包括相对于光束基本透明的材料的蚀刻停止层，设置在蚀刻停止层的上下表面之一上的透明图案，以及不透明图案设置在用于图案化光束的蚀刻停止层的上下表面之一上，其中用于蚀刻停止层的材料选自基本上由Al 2 O 3，MgO及其混合物组成的组，蚀刻停止层具有比用于干法和湿蚀刻工艺中的任何一种形成透明图案的材料的蚀刻速率明显更小的蚀刻速率。

10. 发明申请

US20110284508A1 WELDING SYSTEM AND WELDING METHOD 审中-公开
标题翻译：焊接系统和焊接方法
公开(公告)号：US20110284508A1
公开(公告)日：2011-11-24
申请号：US13111211
申请日：2011-05-19
申请人： Takahiro Miura , Setsu Yamamoto , Takeshi Hoshi , Tsuyoshi Ogawa , Yoshihiro Fujita , Shozo Hirano , Kazumi Watanabe , Satoshi Nagai , Masahiro Yoshida , Jun Semboshi , Satoru Asai , Makoto Ochiai
发明人： Takahiro Miura , Setsu Yamamoto , Takeshi Hoshi , Tsuyoshi Ogawa , Yoshihiro Fujita , Shozo Hirano , Kazumi Watanabe , Satoshi Nagai , Masahiro Yoshida , Jun Semboshi , Satoru Asai , Makoto Ochiai
IPC分类号： B23K26/00
CPC分类号： B23K31/125
摘要： A welding system has: a welding mechanism, a reception laser light source, a reception optical mechanism, an interferometer, a data recording/analysis mechanism and a data recording/analysis mechanism. The reception laser light source generates reception laser light so as to irradiate the object to be welded with the reception laser light for the purpose of detecting a reflected ultrasonic wave obtained as a result of reflection of a transmission ultrasonic wave. The reception optical mechanism transmits, during or after welding operation, the reception laser light generated from the reception laser light source to the surface of the object to be welded for irradiation while moving, together with the welding mechanism, relative to the object to be welded and collects laser light scattered/reflected at the surface of the object to be welded.
摘要翻译：焊接系统具有：焊接机构，接收激光光源，接收光学机构，干涉仪，数据记录/分析机构和数据记录/分析机构。为了检测作为发送超声波的反射而得到的反射超声波，接收激光光源产生接收激光以照射被接收激光的被焊物体。接收光学机构在焊接操作期间或之后将从接收激光光源产生的接收激光与焊接机构相对于被焊接物体一起移动而被发射到被焊接物体的表面并收集在待焊接物体的表面上散射/反射的激光。

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