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1. 发明授权

US5465220A Optical exposure method 失效
公开(公告)号：US5465220A
公开(公告)日：1995-11-07
申请号：US69853
申请日：1993-06-01
申请人： Tamae Haruki , Kenji Nakagawa , Masao Taguchi , Hiroyuki Tanaka , Satoru Asai , Isamu Hanyu
发明人： Tamae Haruki , Kenji Nakagawa , Masao Taguchi , Hiroyuki Tanaka , Satoru Asai , Isamu Hanyu
IPC分类号： G03F7/20 , G03F7/207 , G06F9/00
CPC分类号： G03F7/70566 , G03F7/201 , G03F7/70091 , G03F7/701 , G03F7/70125 , G03F7/70241 , G03F7/70283 , G03F7/70583
摘要： An optical exposure method in photolithography applied for precise processing when semiconductor devices are produced. A pattern on a photomask is projected and exposed on a register on a base plate with an exposure device including a deformation illumination system, a photomask and a projection lens. The deformation illumination system is composed of a light source, a diaphragm and a condenser lens, and the diaphragm is provided with a linear through-hole. The optical exposure method uses a ray of linear light for illumination or two rays of linear light for illumination that are parallel with the pattern. The two rays of linear light are symmetrical with respect to an optical axis. These rays are parallel with the pattern in a position separate from the optical axis of the exposure device when the photomask pattern is a line and space pattern.

2. 发明授权

US06045976A Optical exposure method 失效
公开(公告)号：US06045976A
公开(公告)日：2000-04-04
申请号：US734790
申请日：1996-10-25
申请人： Tamae Haruki , Kenji Nakagawa , Masao Taguchi , Hiroyuki Tanaka , Satoru Asai , Isamu Hanyu
发明人： Tamae Haruki , Kenji Nakagawa , Masao Taguchi , Hiroyuki Tanaka , Satoru Asai , Isamu Hanyu
IPC分类号： G03F7/20 , G03F7/207 , G03C5/00 , G03F9/00
CPC分类号： G03F7/70566 , G03F7/201 , G03F7/70091 , G03F7/701 , G03F7/70125 , G03F7/70241 , G03F7/70283 , G03F7/70583
摘要： An optical exposure method in photolithography applied for precise processing when semiconductor devices are produced. A pattern on a photomask is projected and exposed on a register on a base plate with an exposure device including a deformation illumination system, a photomask and a projection lens. The deformation illumination system is composed of a light source, a diaphragm and a condenser lens, and the diaphragm is provided with a linear through-hole. The optical exposure method uses a ray of linear light for illumination or two rays of linear light for illumination that are parallel with the pattern. The two rays of linear light are symmetrical with respect to an optical axis. These rays are parallel with the pattern in a position separate from the optical axis of the exposure device when the photomask pattern is a line and space pattern.

3. 发明授权

US5607821A Optical exposure method 失效
标题翻译：光学曝光方法
公开(公告)号：US5607821A
公开(公告)日：1997-03-04
申请号：US510128
申请日：1995-08-01
申请人： Tamae Haruki , Kenji Nakagawa , Masao Taguchi , Hiroyuki Tanaka , Satoru Asai , Isamu Hanyu
发明人： Tamae Haruki , Kenji Nakagawa , Masao Taguchi , Hiroyuki Tanaka , Satoru Asai , Isamu Hanyu
IPC分类号： G03F7/20 , G03F7/207 , G03C5/04 , G03B27/32 , G03B27/68 , G03B27/72
CPC分类号： G03F7/70566 , G03F7/201 , G03F7/70091 , G03F7/701 , G03F7/70125 , G03F7/70241 , G03F7/70283 , G03F7/70583
摘要： An optical exposure method in photolithography applied for precise processing when semiconductor devices are produced. A pattern on a photomask is projected and exposed on a register on a base plate with an exposure device including a deformation illumination system, a photomask and a projection lens. The deformation illumination system is composed of a light source, a diaphragm and a condenser lens, and the diaphragm is provided with a linear through-hole. The optical exposure method uses a ray of linear light for illumination or two rays of linear light for illumination that are parallel with the pattern. The two rays of linear light are symmetrical with respect to an optical axis. These rays are parallel with the pattern in a position separate from the optical axis of the exposure device when the photomask pattern is a line and space pattern.
摘要翻译：在制造半导体器件时，用于精密加工的光刻中的光学曝光方法。光掩模上的图案被投影并暴露在具有包括变形照明系统，光掩模和投影透镜的曝光装置的基板上的寄存器上。变形照明系统由光源，光阑和聚光透镜组成，隔膜设有直线通孔。光学曝光方法使用用于照明的线性光线或与图案平行的用于照明的两束线性光。两条线性光线相对于光轴对称。当光掩模图案是线和空间图案时，这些光线与图案平行于与曝光装置的光轴分离的位置。

4. 发明授权

US06420094B1 Optical exposure method 失效
标题翻译：光学曝光方法
公开(公告)号：US06420094B1
公开(公告)日：2002-07-16
申请号：US09500527
申请日：2000-02-09
申请人： Tamae Haruki , Kenji Nakagawa , Satoru Asai , Isamu Hanyu
发明人： Tamae Haruki , Kenji Nakagawa , Satoru Asai , Isamu Hanyu
IPC分类号： G03F720
CPC分类号： G03F7/70566 , G03F7/201 , G03F7/70091 , G03F7/701 , G03F7/70125 , G03F7/70241 , G03F7/70283 , G03F7/70583
摘要： An optical exposure method in photolithography applied for precise processing when semiconductor devices are produced. A pattern on a photomask is projected and exposed on a register on a base plate with an exposure device including a deformation illumination system, a photomask and a projection lens. The deformation illumination system is composed of a light source, a diaphragm and a condenser lens, and the diaphragm is provided with a linear through-hole. The optical exposure method uses a ray of linear light for illumination or two rays of linear light for illumination that are parallel with the pattern. The two rays of linear light are symmetrical with respect to an optical axis. These rays are parallel with the pattern in a position separate from the optical axis of the exposure device when the photomask pattern is a line and space pattern.
摘要翻译：在制造半导体器件时，用于精密加工的光刻中的光学曝光方法。光掩模上的图案被投影并暴露在具有包括变形照明系统，光掩模和投影透镜的曝光装置的基板上的寄存器上。变形照明系统由光源，光阑和聚光透镜组成，隔膜设有直线通孔。光学曝光方法使用用于照明的线性光线或与图案平行的用于照明的两束线性光。两条线性光线相对于光轴对称。当光掩模图案是线和空间图案时，这些光线与图案平行于与曝光装置的光轴分离的位置。

5. 发明授权

US5472813A Pattern exposing method using phase shift and mask used therefor 失效
标题翻译：使用相移和掩模的图案曝光方法
公开(公告)号：US5472813A
公开(公告)日：1995-12-05
申请号：US274689
申请日：1994-07-14
申请人： Kenji Nakagawa , Masao Kanazawa , Tamae Haruki , Yasuko Tabata
发明人： Kenji Nakagawa , Masao Kanazawa , Tamae Haruki , Yasuko Tabata
IPC分类号： G03F1/00 , G03F7/00 , G03F7/20 , G03F9/00
CPC分类号： G03F1/34 , G03F1/26 , G03F1/70 , G03F7/0035 , G03F7/2022 , G03F7/70283 , G03F7/70466
摘要： A pattern exposing method forms a predetermined resist pattern on a substrate by exposing a first resist layer which is formed on the substrate using a first reticle which includes a first pattern for exposing a first corresponding pattern on the first resist layer by use of a phase shift of light transmitted through the first reticle, developing the exposed first resist layer, exposing a second resist layer which is formed on the entire surface of the substrate, including a top of the first resist layer, using a second reticle which has a second pattern for exposing a second corresponding pattern on the second resist layer by use of light transmitted through the second reticle, where the second corresponding pattern overlaps at least a part of the first corresponding pattern, and developing the second resist layer so that a part of the first corresponding pattern is removed by the second corresponding pattern and the predetermined resist pattern is formed.
摘要翻译：图案曝光方法通过使用第一掩模版曝光形成在衬底上的第一抗蚀剂层而在衬底上形成预定的抗蚀剂图案，第一掩模版包括通过使用相移在第一抗蚀剂层上曝光第一对应图案的第一图案透射通过第一掩模版的光，显影曝光的第一抗蚀剂层，使用具有第二图案的第二掩模版露出形成在包括第一抗蚀剂层的顶部的基板的整个表面上的第二抗蚀剂层，通过使用透射通过第二掩模版的光在第二抗蚀剂层上曝光第二对应图案，其中第二对应图案与第一对应图案的至少一部分重叠，并且显影第二抗蚀剂层，使得第一对应图案的一部分通过第二对应图案去除图案，并且形成预定的抗蚀剂图案。

6. 发明授权

US5364716A Pattern exposing method using phase shift and mask used therefor 失效
标题翻译：使用相移和掩模的图案曝光方法
公开(公告)号：US5364716A
公开(公告)日：1994-11-15
申请号：US940408
申请日：1992-09-03
申请人： Kenji Nakagawa , Masao Kanazawa , Tamae Haruki , Yasuko Tabata
发明人： Kenji Nakagawa , Masao Kanazawa , Tamae Haruki , Yasuko Tabata
IPC分类号： G03F1/00 , G03F7/00 , G03F7/20 , G03F9/00
CPC分类号： G03F1/34 , G03F1/26 , G03F1/70 , G03F7/0035 , G03F7/2022 , G03F7/70283 , G03F7/70466
摘要： A pattern exposing method forms a predetermined resist pattern on a substrate by exposing a first resist layer which is formed on the substrate using a first reticle which includes a first pattern for exposing a first corresponding pattern on the first resist layer by use of a phase shift of light transmitted through the first reticle, developing the exposed first resist layer, exposing a second resist layer which is formed on the entire surface of the substrate, including a top of the first resist layer, using a second reticle which has a second pattern for exposing a second corresponding pattern on the second resist layer by use of light transmitted through the second reticle, where the second corresponding pattern overlaps at least a part of the first corresponding pattern, and developing the second resist layer so that a part of the first corresponding pattern is removed by the second corresponding pattern and the predetermined resist pattern is formed.
摘要翻译：图案曝光方法通过使用第一掩模版曝光形成在衬底上的第一抗蚀剂层而在衬底上形成预定的抗蚀剂图案，第一掩模版包括通过使用相移在第一抗蚀剂层上曝光第一对应图案的第一图案透射通过第一掩模版的光，显影曝光的第一抗蚀剂层，使用具有第二图案的第二掩模版露出形成在包括第一抗蚀剂层的顶部的基板的整个表面上的第二抗蚀剂层，通过使用透射通过第二掩模版的光在第二抗蚀剂层上曝光第二对应图案，其中第二对应图案与第一对应图案的至少一部分重叠，并且显影第二抗蚀剂层，使得第一对应图案的一部分通过第二对应图案去除图案，并且形成预定的抗蚀剂图案。

7. 发明授权

US5637424A Fine pattern lithography with positive use of interference 失效
标题翻译：精细图案光刻与正面使用的干涉
公开(公告)号：US5637424A
公开(公告)日：1997-06-10
申请号：US387008
申请日：1995-02-10
申请人： Tamae Haruki , Kenji Nakagawa
发明人： Tamae Haruki , Kenji Nakagawa
IPC分类号： G03F1/29 , G03F7/20 , G03F9/00
CPC分类号： G03F1/29 , G03F7/70283 , G03F7/70433 , G03F7/705 , G03F7/70583
摘要： A mask for forming a desired pattern on the image plane is divided into a number of cell areas. Each cell is assigned a uniform characteristic. Each cell area is assigned a particular light transmission characteristic to form a starting pattern which may be the desired target pattern itself. The light transmission characteristic of each cell area is changed randomly. The light intensity distribution is simulated to select only the patterns having a good performance. Such characteristic change is continued until the inheritance operation is converged and a final pattern is obtained. This final pattern is used as the mask pattern. The above process may also be applied to determining the shape of an aperture stop and a light source.
摘要翻译：用于在图像平面上形成期望图案的掩模被分成多个单元区域。每个单元格被赋予均匀的特征。每个单元格区域被赋予特定的光透射特性以形成可以是期望的目标图案本身的起始图案。每个单元区域的光传输特性随机变化。模拟光强分布，仅选择具有良好性能的图案。这种特征变化一直持续到继承操作收敛并获得最终图案。该最终图案用作掩模图案。上述过程也可以应用于确定孔径光阑和光源的形状。

8. 发明授权

US5415952A Fine pattern lithography with positive use of interference 失效
标题翻译：精细图案光刻与正面使用的干涉
公开(公告)号：US5415952A
公开(公告)日：1995-05-16
申请号：US132165
申请日：1993-10-05
申请人： Tamae Haruki , Kenji Nakagawa
发明人： Tamae Haruki , Kenji Nakagawa
IPC分类号： G03F1/29 , G03F7/20 , G03F9/00
CPC分类号： G03F1/29 , G03F7/70283 , G03F7/70433 , G03F7/705 , G03F7/70583
摘要： A mask for forming a desired pattern on the image plane is divided into a number of dell areas. Each cell is assigned a uniform characteristic. Each cell area is assigned a particular light transmission characteristic to form a starting pattern which may be the desired target pattern itself. The light transmission characteristic of each cell area is changed randomly. The light intensity distribution is simulated to select only the patterns having a good performance. Such characteristic change is continued until the inheritance operation is converged and a final, pattern is obtained. This final pattern is used as the mask pattern. The above process may also be applied to determining the shape of an aperture stop and a light source.
摘要翻译：用于在图像平面上形成期望图案的掩模被分成多个区域。每个单元格被赋予均匀的特征。每个单元格区域被赋予特定的光透射特性以形成可以是期望的目标图案本身的起始图案。每个单元区域的光传输特性随机变化。模拟光强分布，仅选择具有良好性能的图案。这种特征变化一直持续到继承操作收敛并获得最终的图案。该最终图案用作掩模图案。上述过程也可以应用于确定孔径光阑和光源的形状。

9. 发明授权

US5624791A Pattern forming method using mask 失效
标题翻译：使用掩模的图案形成方法
公开(公告)号：US5624791A
公开(公告)日：1997-04-29
申请号：US463930
申请日：1995-06-05
申请人： Toshiaki Kawabata , Kenji Nakagawa , Seiichiro Yamaguchi , Masao Taguchi , Kazuhiko Sumi , Yuichiro Yanagishita
发明人： Toshiaki Kawabata , Kenji Nakagawa , Seiichiro Yamaguchi , Masao Taguchi , Kazuhiko Sumi , Yuichiro Yanagishita
IPC分类号： G03F1/00 , G03F1/34 , G03F1/68 , G03F1/80 , H01L21/027 , H01L21/30 , G03C5/00
CPC分类号： G03F1/29 , G03F1/30 , G03F1/34 , G03F1/28
摘要： A mask includes a transparent layer which is transparent with respect to a light which is used for an exposure, and a mask pattern layer which is formed on the transparent layer. At least a portion of the mask patterns layer is made up solely of a phase shift layer for transmitting the light, so that a phase shift occurs between a phase of the light transmitted through the phase shift layer and a phase of the light transmitted through a portion of the mask having no phase shift layer.
摘要翻译：掩模包括相对于用于曝光的光是透明的透明层，以及形成在透明层上的掩模图案层。掩模图案层的至少一部分仅由用于透射光的相移层构成，从而在通过相移层传输的光的相位与通过相移层传输的光的相位之间发生相移没有相移层的掩模部分。

10. 发明授权

US5489509A Mask, mask producing method and pattern forming method using mask 失效
标题翻译：掩模，掩模生产方法和使用掩模的图案形成方法
公开(公告)号：US5489509A
公开(公告)日：1996-02-06
申请号：US54608
申请日：1993-04-30
申请人： Toshiaki Kawabata , Kenji Nakagawa , Seiichiro Yamaguchi , Masao Taguchi , Kazuhiko Sumi , Yuichiro Yanagishita
发明人： Toshiaki Kawabata , Kenji Nakagawa , Seiichiro Yamaguchi , Masao Taguchi , Kazuhiko Sumi , Yuichiro Yanagishita
IPC分类号： G03F1/00 , G03F1/34 , G03F1/68 , G03F1/80 , H01L21/027 , H01L21/30 , G03F9/00
CPC分类号： G03F1/29 , G03F1/30 , G03F1/34 , G03F1/28
摘要： A mask includes a first layer which is transparent with respect to an exposure light, and a phase shift mask pattern which is formed on the transparent layer. The pattern includes one or more phase shift regions adapted for transmitting the exposure light impinging thereon and shifting the phase of the transmitted light relative to the phase of light which passes through a portion of the mask having no phase shift layer.
摘要翻译：掩模包括相对于曝光光透明的第一层和形成在透明层上的相移掩模图案。该图案包括一个或多个相移区域，其适于透射照射在其上的曝光光，并且相对于穿过没有相移层的掩模的一部分的光的相位移动透射光的相位。

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