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1. 发明授权

US5569628A Semiconductor device fabrication method 失效
标题翻译：半导体器件制造方法
公开(公告)号：US5569628A
公开(公告)日：1996-10-29
申请号：US535323
申请日：1995-09-27
申请人： Kousaku Yano , Tomoyasu Murakami , Masayuki Endo , Noboru Nomura
发明人： Kousaku Yano , Tomoyasu Murakami , Masayuki Endo , Noboru Nomura
IPC分类号： H01L21/28 , H01L21/768 , H01L21/465
CPC分类号： H01L21/76841 , H01L21/76843
摘要： A silicon dioxide film is partly etched away to form an opening thereby exposing a silicon substrate. The surface of the opening, which is almost entirely covered with Si-OH, is coated with hexamethyldisilazane (HMDS) to bring about a silylation reaction. This causes the silicon substrate surface to be covered with a molecular film formed by replacing the hydrogen part in Si-OH with Si((CH.sub.3).sub.3. Atoms of aluminum are ejected by a sputtering process. The ejected aluminum atoms collide with the molecular film. Although some hydrocarbons (CH.sub.x) are sputtered or ejected due to such collision, a SiO.sub.x C.sub.y H.sub.z film 12' transformed from the molecular film is left between an aluminum film deposited and the silicon substrate. This SiO.sub.x C.sub.y H.sub.z film 12' acts as a barrier metal. The presence of the SiO.sub.x C.sub.y H.sub.z film prevents the occurrence of counter diffusion in the Al-Si system. No spikes are formed as a result.
摘要翻译：部分地蚀刻掉二氧化硅膜以形成开口，从而暴露硅衬底。几乎完全用Si-OH覆盖的开口的表面涂覆有六甲基二硅氮烷（HMDS）以进行甲硅烷基化反应。这导致硅衬底表面被用Si（（CH 3）3代替Si-OH中的氢部分而形成的分子膜覆盖，铝的原子通过溅射工艺喷射，喷射的铝原子与分子膜碰撞虽然由于这种碰撞而使一些烃类（CHx）溅射或喷射，但是从分子膜转化的SiO x C y H z膜12'留在沉积的铝膜和硅基板之间，该SiOxCyHz膜12'作为阻挡金属， SiOxCyHz膜的存在防止了在Al-Si系统中产生反向扩散，结果不形成尖峰。

2. 发明授权

US5576247A Thin layer forming method wherein hydrophobic molecular layers preventing a BPSG layer from absorbing moisture 失效
标题翻译：疏水分子层防止BPSG层吸收水分的薄层形成方法
公开(公告)号：US5576247A
公开(公告)日：1996-11-19
申请号：US97231
申请日：1993-07-27
申请人： Kousaku Yano , Masayuki Endo , Yuka Terai , Noboru Nomura , Tomoyasu Murakami , Tetsuya Ueda , Satoshi Ueda
发明人： Kousaku Yano , Masayuki Endo , Yuka Terai , Noboru Nomura , Tomoyasu Murakami , Tetsuya Ueda , Satoshi Ueda
IPC分类号： H01L21/3105 , H01L21/316
CPC分类号： H01L21/3105 , Y10S438/974
摘要： A BPSG layer serving as a silicon oxide layer is formed on a semiconductor substrate 1. Formed on the surface of the BPSG layer is a hydrophobic molecular layer comprising hydrophobic groups such as methyl, ethyl and the like, by a silylation reaction (in which silyl having hydrophobic groups such as methyl groups, ethyl groups and the like, is reacted with OH groups, and in which the hydrophobic groups are substituted with H of the OH groups to generate --O--Si(CH.sub.3).sub.3 or the like). The molecular layer prevents the BPSG layer from absorbing moisture.
摘要翻译：在半导体衬底1上形成用作氧化硅层的BPSG层。在BPSG层的表面上形成疏水性分子层，其通过甲硅烷基化反应（甲基，具有疏水基团如甲基，乙基等与OH基团反应，并且其中疏水基团被H的OH基团取代以产生-O-Si（CH 3）3等）。分子层防止BPSG层吸湿。

3. 发明授权

US5312776A Method of preventing the corrosion of metallic wirings 失效
标题翻译：防止金属布线腐蚀的方法
公开(公告)号：US5312776A
公开(公告)日：1994-05-17
申请号：US977022
申请日：1992-11-16
申请人： Tomoyasu Murakami , Michinari Yamanaka , Kousaku Yano , Masayuki Endo , Noboru Nomura , Staoshi Ueda , Naoto Matsuo , Hiroshi Imai , Masafumi Kubota
发明人： Tomoyasu Murakami , Michinari Yamanaka , Kousaku Yano , Masayuki Endo , Noboru Nomura , Staoshi Ueda , Naoto Matsuo , Hiroshi Imai , Masafumi Kubota
IPC分类号： H01L21/02 , H01L21/3213 , H01L23/532 , H01L71/44
CPC分类号： H01L21/02071 , H01L23/5329 , H01L2924/0002 , Y10S148/131
摘要： According to the method of preventing the corrosion of metallic wirings of the present invention, aluminium alloy wirings are formed on the surface of a substrate with the use of photoresists, and the photoresists are then removed. Thereafter, HMDS (hexamethyl disilazine) serving as a surface-active agent or its derivative is supplied to the aluminium alloy wirings to form hydrophobic molecular layers on the lateral walls of the aluminium alloy wirings.
摘要翻译：根据本发明的防止金属配线的腐蚀的方法，使用光致抗蚀剂在基板的表面上形成铝合金布线，然后除去光致抗蚀剂。此后，将作为表面活性剂或其衍生物的HMDS（六甲基二硅嗪）供给到铝合金布线，以在铝合金布线的侧壁上形成疏水性分子层。

4. 发明授权

US4745042A Water-soluble photopolymer and method of forming pattern by use of the same 失效
标题翻译：水溶性光聚合物及其形成方法
公开(公告)号：US4745042A
公开(公告)日：1988-05-17
申请号：US724304
申请日：1985-04-17
申请人： Masaru Sasago , Masayuki Endo , Kenichi Takeyama , Noboru Nomura
发明人： Masaru Sasago , Masayuki Endo , Kenichi Takeyama , Noboru Nomura
IPC分类号： G03F7/021 , G03F7/022 , G03F7/09 , G03F7/095 , G03C1/495 , G03C1/52 , G03C1/71 , G03C5/16
CPC分类号： G03F7/022 , G03F7/0215 , G03F7/091 , G03F7/095
摘要： This invention relates to a composition of a water-soluble photopolymer which is synthesized from a water-soluble organic matter, which matter is a base polymer produced and refined particularly by bacterial culture biotechnically and contains at least one of polysaccharides, protein, gelatin, casein, polyvinyl pyrrolidone and polyvinyl alcohol, in particular pullulan which is a natural polysaccharide, and chemicals to add functions to aqueous solution of the base polymer, for example, water-soluble radiation sensitive chemical, crosslinking agent, catalyst, epoxy compound, and a compound possessing bleaching or fading action with respect to radiation.The water-soluble photopolymer can be developed in water, and is high in safety and small in aging, and is expected to be used as the material of single-layer resist or multi-layer resist of high resolution and high resistance, or as the material for contrast enhanced litography. Besides, when it is applied in said pattern forming method, much finer patterns may be formed.
摘要翻译：本发明涉及一种由水溶性有机物合成的水溶性光聚合物组合物，其特征在于生物技术生产和精制而成的基质聚合物，并含有多糖，蛋白质，明胶，酪蛋白中的至少一种，聚乙烯吡咯烷酮和聚乙烯醇，特别是作为天然多糖的支链淀粉，以及赋予基础聚合物水溶液功能的化学品，例如水溶性辐射敏感化学品，交联剂，催化剂，环氧化合物和化合物拥有相对于辐射的漂白或褪色作用。水溶性光聚合物可以在水中显影，安全性高，老化程度低，有望用作高分辨率，高电阻的单层抗蚀剂或多层抗蚀剂的材料，或作为材料对比增强了诉讼。此外，当以所述图案形成方法应用时，可以形成更精细的图案。

5. 发明授权

US5472826A Semiconductor device fabrication method 失效
标题翻译：半导体器件制造方法
公开(公告)号：US5472826A
公开(公告)日：1995-12-05
申请号：US193550
申请日：1994-02-08
申请人： Masayuki Endo , Teruhito Ohnishi , Noboru Nomura
发明人： Masayuki Endo , Teruhito Ohnishi , Noboru Nomura
IPC分类号： G03F7/38 , H01L21/027 , H01L21/266 , H01L21/30 , H01L21/311 , G03F7/26
CPC分类号： H01L21/31111 , H01L21/0274 , H01L21/266
摘要： An improved semiconductor device fabrication technique is disclosed. A resist layer, composed of a chemical compound which generates an acid when exposed to energy light and a resin which contains protecting groups that are removed from the resin by acid, is formed on top of a semiconductor substrate. The resist layer is subjected to a lithography and a development process and is formed into a resist pattern. This resist pattern is exposed to ultraviolet beams, and the chemical compound generates an acid and the protecting groups are removed from the resin. As a result of such an elimination reaction, the surface of the resist pattern becomes coarse. Thereafter, an implant of ions is carried out to the semiconductor substrate using the resist pattern as a mask. The surface of the semiconductor substrate is cleaned using a cleaning solution, and the resist pattern with a coarse surface can easily and completely be removed from the semiconductor substrate.
摘要翻译：公开了一种改进的半导体器件制造技术。在半导体基板的顶部形成有由暴露于能量光时产生酸的化合物构成的抗蚀剂层和含有通过酸从树脂中除去的保护基的树脂。对抗蚀剂层进行光刻和显影处理，并形成抗蚀剂图案。该抗蚀剂图案暴露于紫外线，并且化合物产生酸，并且保护基团从树脂中除去。作为这种消除反应的结果，抗蚀图案的表面变粗。此后，使用抗蚀剂图案作为掩模，对半导体衬底进行离子注入。使用清洗液对半导体基板的表面进行清洗，可以容易且完全地从半导体基板除去具有粗糙表面的抗蚀剂图案。

6. 发明申请

US20130272913A1 STEEL WIRE MATERIAL AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：钢丝材料及其制造方法
公开(公告)号：US20130272913A1
公开(公告)日：2013-10-17
申请号：US13995565
申请日：2011-12-09
申请人： Mikako Takeda , Shohei Nakakubo , Kazuhiko Kirihara , Masayuki Endo
发明人： Mikako Takeda , Shohei Nakakubo , Kazuhiko Kirihara , Masayuki Endo
IPC分类号： C22C38/54 , C22C38/16 , C22C38/08 , C22C38/14 , C22C38/12 , B21B1/16 , C22C38/42 , C22C38/20 , C22C38/06 , C22C38/04 , C22C38/02 , C22C38/00 , C22C38/50
CPC分类号： C22C38/04 , B21B1/16 , C21D1/74 , C21D8/065 , C21D9/525 , C22C38/00 , C22C38/001 , C22C38/002 , C22C38/02 , C22C38/06 , C22C38/08 , C22C38/12 , C22C38/14 , C22C38/16 , C22C38/20 , C22C38/42 , C22C38/50 , C22C38/54
摘要： This steel wire material contains 0.05%-1.2% C (“%” means “% by mass,” same hereinafter for chemical components.), 0.01%-0.7% Si, 0.1%-1.5% Mn, 0.02% max. P (not including 0%), 0.02% max. S (not including 0%), and 0.005% max. N (not including 0%), with the remainder being iron and unavoidable impurities. The steel wire material has a scale 6.0-20 μm thick and holes of an equivalent circle diameter of 1 μm max. in said scale that occupy 10% by area max. Said scale does not detach in the cooling process after hot rolling or during storage or transportation but can readily detach during mechanical descaling.
摘要翻译：该钢丝材含有0.05％-1.2％C（“％”表示“质量％”，化学成分相同），0.01％-0.7％Si，0.1％〜1.5％Mn，0.02％以下。 P（不包括0％），最大0.02％。 S（不含0％），最大0.005％。 N（不包括0％），其余为铁和不可避免的杂质。钢丝材料的厚度为6.0-20μm，当量圆直径为1mum的孔。按规模占总面积的10％。所述鳞片在热轧后或在储存或运输期间的冷却过程中不分离，但是在机械除锈时容易分离。

7. 发明申请

US20080193882A1 PATTERN FORMATION METHOD 有权
标题翻译：模式形成方法
公开(公告)号：US20080193882A1
公开(公告)日：2008-08-14
申请号：US11958661
申请日：2007-12-18
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03F7/20
CPC分类号： G03F7/0035 , G03F7/2041
摘要： After forming a lower layer film, an intermediate layer film and a first resist film on a substrate, a first resist pattern is formed by performing first exposure. Then, after a first intermediate layer pattern is formed by transferring the first resist pattern onto the intermediate layer film, a second resist film is formed thereon, and a second resist pattern is formed by performing second exposure. Thereafter, a second intermediate layer pattern is formed by transferring the second resist pattern onto the intermediate layer film. After removing the second resist film, the lower layer film is etched by using the second intermediate layer pattern as a mask, so as to form a lower layer pattern.
摘要翻译：在基板上形成下层膜，中间层膜和第一抗蚀剂膜之后，通过进行第一曝光来形成第一抗蚀剂图案。然后，在通过将第一抗蚀剂图案转印到中间层膜上形成第一中间层图案之后，在其上形成第二抗蚀剂膜，并通过进行第二曝光形成第二抗蚀剂图案。此后，通过将第二抗蚀剂图案转印到中间层膜上来形成第二中间层图案。在除去第二抗蚀剂膜之后，通过使用第二中间层图案作为掩模来蚀刻下层膜，以形成下层图案。

8. 发明授权

US07338743B2 Resist material and pattern formation method 有权
标题翻译：抗蚀材料和图案形成方法
公开(公告)号：US07338743B2
公开(公告)日：2008-03-04
申请号：US11197296
申请日：2005-08-05
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03C1/76 , G03C1/492 , G03C1/494 , G03C5/00
CPC分类号： G03F7/0392 , G03F7/0395 , G03F7/0397
摘要： A resist material includes a first polymer in which part of alkali-soluble groups are protected by an acid labile group labilized by an acid; a second polymer in which substantially all alkali-soluble groups are protected by an acid labile group labilized by an acid; and an acid generator.
摘要翻译：抗蚀剂材料包括第一聚合物，其中碱溶性基团的一部分被酸酸化的酸不稳定基团保护; 其中基本上所有的碱溶性基团都被被酸化的酸不稳定基团保护的第二聚合物; 和酸发生剂。

9. 发明授权

US07273820B2 Method for fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07273820B2
公开(公告)日：2007-09-25
申请号：US10399755
申请日：2001-10-09
申请人： Hideo Nakagawa , Masaru Sasago , Masayuki Endo , Yoshihiko Hirai
发明人： Hideo Nakagawa , Masaru Sasago , Masayuki Endo , Yoshihiko Hirai
IPC分类号： H01L21/469
CPC分类号： H01L21/76819 , H01L21/31051
摘要： After a fluid film is formed by supplying a material with fluidity to the surface of a substrate formed with a stepped layer, the fluid film is pressed against the substrate by a pressing member having a planar pressing surface so that the surface of the fluid film is planarized. The fluid film is heated in this state and thereby solidified to form a solidified film having a planar surface.
摘要翻译：在通过向形成有阶梯层的基板的表面供给流动性的材料形成流体膜之后，通过具有平面的按压面的按压部件将流体膜压在基板上，使得流体膜的表面为平面化在该状态下加热流体膜，由此固化，形成具有平坦表面的固化膜。

10. 发明申请

US20070082292A1 Water-soluble material, chemically amplified resist and pattern formation method using the same 审中-公开
标题翻译：水溶性材料，化学放大抗蚀剂和使用其的图案形成方法
公开(公告)号：US20070082292A1
公开(公告)日：2007-04-12
申请号：US11602377
申请日：2006-11-21
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03C1/00
CPC分类号： G03F7/11 , G03F7/0045 , G03F7/0392 , G03F7/095
摘要： A water-soluble material used for forming a water-soluble film on a chemically amplified resist film includes a water-soluble polymer, an acid generator and a compound constructing an inclusion compound for incorporating the acid generator. Also, in a pattern formation method, a chemically amplified resist film is formed on a substrate, and a water-soluble film made of a water-soluble material including a water-soluble polymer, an acid generator and a compound constructing an inclusion compound for incorporating the acid generator is formed on the resist film. Thereafter, pattern exposure is carried out by selectively irradiating the resist film with exposing light through the water-soluble film, the resultant resist film is developed and the water-soluble film is removed. Thus, a resist pattern made of the resist film is formed.
摘要翻译：用于在化学放大抗蚀剂膜上形成水溶性膜的水溶性材料包括水溶性聚合物，酸产生剂和构成用于掺入酸产生剂的包合物的化合物。此外，在图案形成方法中，在基板上形成化学放大抗蚀剂膜，以及由水溶性材料构成的水溶性膜，所述水溶性物质包含水溶性聚合物，酸产生剂和构成包合物的化合物，在抗蚀剂膜上形成并入酸产生剂。此后，通过选择性地照射通过水溶性膜曝光光的抗蚀剂膜来进行图案曝光，使得到的抗蚀剂膜显影并除去水溶性膜。因此，形成由抗蚀剂膜制成的抗蚀剂图案。

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