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    • 5. 发明授权
    • Manufacturing method for calcium fluoride and calcium fluoride for photolithography
    • US06332922B1
    • 2001-12-25
    • US09257296
    • 1999-02-25
    • Shigeru SakumaTsutomu MizugakiKazuo KimuraShuuichi Takano
    • Shigeru SakumaTsutomu MizugakiKazuo KimuraShuuichi Takano
    • C30B3306
    • G03F7/70958C30B29/12C30B33/00G02B1/02G03F7/70966Y10S117/906
    • A manufacturing method for a single crystal of calcium fluoride by which it is possible to obtain a single crystal of calcium fluoride with adequately small double refraction, which can be used in optical systems for photolithography, and in particular, a single crystal of calcium fluoride with a large diameter (ø 200 mm or larger) having superior optical properties, which can be used for photolithography with a wavelength of 250 nm or less. A manufacturing method for a single crystal of calcium fluoride, having its optical properties improved through an annealing process in which a single crystal of calcium fluoride is contained in a sealable container, and said container is sealed and vacuumed, followed by, a process of heating with a heater arranged external to said container so that the temperature inside said container is raised to a first temperature, which is lower than the melting point of said single crystal of calcium fluoride, a process by which the temperature inside said container is maintained at said first temperature for a designated period of time, and a process by which the temperature inside said container is lowered to room temperature, wherein, the maximum temperature of the annealing process is set to be a first temperature within the range of 1020 to 1150° C. Also provided is a manufacturing method for a single crystal of calcium fluoride having its optical properties improved through an annealing process such that, its maximum temperature during the thermal process is set to a first temperature which is within the range of 1020 to 1150° C., and which is maintained for a designated period of time, and its cooling speed for reaching a second temperature, which is in the range of (or around) 600 to 800° C., from said first temperature is set to be 1.2° C./hour or less, or its cooling speed for reaching a second temperature, which is in the range of (or around) 700 to 900° C., from said first temperature is set to be 1.2° C./hour or less.
    • 8. 发明授权
    • Apparatus for measuring tire uniformity
    • 测量轮胎均匀性的装置
    • US4969355A
    • 1990-11-13
    • US477093
    • 1990-02-08
    • Shunichi DoiSatoru MatsushimaYoshiteru MizutaniYuzo YamamotoMichio IshiguroShigeru SakumaNoboru Sugiura
    • Shunichi DoiSatoru MatsushimaYoshiteru MizutaniYuzo YamamotoMichio IshiguroShigeru SakumaNoboru Sugiura
    • G01M1/16G01M17/02
    • G01M17/022
    • A tire uniformity measuring apparatus having: a drum for rotating a tire; an oscillating member disposed parallel to a drum rotating shaft and pivotally supported on a machine base through a fulcrum; a movable member disposed in parallel to the drum rotating shaft in the plane including the drum rotating shaft and a tire rotating shaft, the movable member being laterally movable in response to a load acting on the tire in a lateral direction perpendicular to the radial direction of the tire; a load applying member for applying in advance a predetermined load to the tire; and a displacement detecting member for detecting as a displacement of the movable member the displacement of the tire rotating shaft which is dependent on variation in the lateral load; thereby detecting a variation in the lateral load of the tire. The apparatus may comprise a further movable member which is a shaft member constituting the fulcrum, the movable member being slidably movable along the longitudinal axis only in response to a variation in the tangential load, and a further displacement detecting member for detecting a displacement of the movable member, thereby detecting a variation in the tangential load acting on the tire.
    • 一种轮胎均匀性测量装置,具有:用于使轮胎旋转的滚筒; 摆动构件,其平行于鼓旋转轴设置并通过支点枢转地支撑在机器基座上; 可动构件,其在包括所述滚筒旋转轴和轮胎旋转轴的平面中平行于所述滚筒旋转轴设置,所述可动构件能够在与所述滚筒旋转轴的径向方向垂直的横向方向上作用在轮胎上的负载侧向移动 轮胎; 负载施加部件,用于预先向轮胎施加预定的载荷; 以及位移检测构件,用于检测所述可动构件的位移,所述位移取决于所述横向载荷的变化,所述轮胎旋转轴的位移; 从而检测轮胎的横向载荷的变化。 该装置可以包括作为构成支点的轴构件的另一个可移动构件,该可移动构件仅在响应于切向载荷的变化时可沿着纵向轴线可滑动地移动;以及另一位移检测构件,用于检测 从而检测作用在轮胎上的切向负载的变化。
    • 10. 发明授权
    • Projection exposure apparatus
    • 投影曝光装置
    • US5978070A
    • 1999-11-02
    • US26507
    • 1998-02-19
    • Shigeru SakumaTsutomu MizugakiMasaki Shiozawa
    • Shigeru SakumaTsutomu MizugakiMasaki Shiozawa
    • C30B11/00G02B1/02G03F7/20G03B27/52
    • G03F7/70958C30B11/00C30B29/12G02B1/02G03F7/70058G03F7/70241
    • A projection exposure apparatus capable of projecting and exposing mask pattern images onto a substrate by means of a optical projection system, the apparatus includes an optical illumination system capable of illuminating a mask utilizing an excimer laser illuminating light source in a wavelength range of 230 nm or less, and an optical projection system including optical members that include a calcium fluoride crystal with a total alkaline earth metal impurity content of 1.times.10.sup.18 atom/cm.sup.3 or less, and which projects images of the mask pattern onto a substrate. The calcium fluoride crystal is manufactured by a method including the steps of adding a fluorinating agent to a powdered calcium fluoride forming a mixture, placing the mixture in a growing crucible inside a vacuum furnace, and evacuating the vacuum furnace. Once the vacuum furnace is evacuated, the temperature is elevated a first time inside the vacuum furnace to a temperature exceeding a melting point of the mixture and is maintained at a predetermined constant temperature inside the vacuum furnace until a polycrystalline material is formed. The polycrystalline material is then cooled and the temperature inside the vacuum furnace is elevated until the polycrystalline material is melted, wherein crystal growth of the polycrystalline material is promoted and a crystal ingot is formed.
    • 一种投影曝光装置,其能够通过光学投影系统将掩模图案图像投影并曝光到基板上,该装置包括:能够利用在230nm的波长范围内的准分子激光照明光源照射掩模的光学照明系统,或 以及包括光学部件的光学投影系统,其包括总碱土金属杂质含量为1×10 18原子/ cm 3以下的氟化钙晶体,并将掩模图案的图像投影到基板上。 氟化钙晶体通过以下方法制造:将氟化剂添加到形成混合物的粉末状氟化钙中的步骤,将混合物放置在真空炉内的生长坩埚内,抽空真空炉。 一旦真空炉抽真空,将真空炉内的温度首次升高到超过混合物熔点的温度,并保持在真空炉内部的预定恒定温度,直至形成多晶材料。 然后将多晶材料冷却,使真空炉内的温度升高直到多晶材料熔融,其中促进多晶材料的晶体生长并形成晶锭。