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    • 1. 发明申请
    • Pulley rotatingly supporting device
    • 皮带轮旋转支撑装置
    • US20060025257A1
    • 2006-02-02
    • US10489669
    • 2002-09-10
    • Kouichi TanabeTakayuki MiyagawaMasato Taniguchi
    • Kouichi TanabeTakayuki MiyagawaMasato Taniguchi
    • F16H55/36F16H63/00
    • B32B7/12B32B15/08B32B27/28F16C19/166F16C33/7853F16C2361/63H05K1/0346H05K3/389
    • The object of the invention is to provide a structure which not only can be reduced in size but also can secure the durability of an endless belt (11) to be provided on a driven pulley (4b) and a pulley rotation support apparatus for supporting the driven pulley (4b). In the invention, as the above pulley rotation support apparatus, there is used a three-point-contact-type or four-point-contact-type radial ball bearing (14b). An offset quantity δ, which is an axial-direction distance between the center α of a radial load applied from the endless belt (11) to the driven pulley (4b) and the center position β of the radial ball bearing (14b), is set 40% or less of the pitch circle diameter of the radial ball bearing (14b). The radial clearance of this radial ball bearing (14b) is set 0.2% or less of the above pitch circle diameter.
    • 本发明的目的是提供一种结构,其不仅可以减小尺寸,而且可以确保设置在从动带轮(4b)上的环形带(11)的耐久性和用于支撑的带轮旋转支撑装置 从动带轮(4b)。 在本发明中,作为上述带轮旋转支撑装置,使用三点接触型或四点接触型径向球轴承(14b)。 偏移量delta,其是从环形带(11)施加到从动带轮(4b)的径向载荷的中心α与径向球轴承(14b)的中心位置β之间的轴向距离, 设定为径向球轴承(14b)的节圆直径的40%以下。 该径向球轴承(14b)的径向间隙设定为上述节圆直径的0.2%以下。
    • 3. 发明授权
    • Photoresist composition
    • 光刻胶组成
    • US08546059B2
    • 2013-10-01
    • US12953606
    • 2010-11-24
    • Koji IchikawaTakayuki MiyagawaMitsuhiro Hata
    • Koji IchikawaTakayuki MiyagawaMitsuhiro Hata
    • G03F7/039G03F7/20G03F7/30G03F7/38
    • G03F7/0046G03F7/0045G03F7/0382G03F7/0392G03F7/0397G03F7/2041
    • The present invention provides a photoresist composition comprising a resin, an acid generator and a compound represented by the formula (C1): wherein Rc1 represents an aromatic group which can have one or more substituents, Rc2 and Rc3 independently each represent a hydrogen atom, an aliphatic hydrocarbon group which can have one or more substituents or an aromatic group which can have one or more substituents, Rc4 and Rc6 independently each represent a hydrogen atom or an aliphatic hydrocarbon group which can have one or more substituents, or Rc4 and Rc6 are bonded each other to form an alkanediyl group, Rc5 represents an aliphatic hydrocarbon group which can have one or more substituents or an amino group which can have one or two substituents, Rc7 represents a hydrogen atom or an aliphatic hydrocarbon group which can have one or more substituents, or Rc5 and Rc7 are bonded each other to form an alkanediyl group.
    • 本发明提供一种光致抗蚀剂组合物,其包含树脂,酸产生剂和由式(C1)表示的化合物:其中Rc1表示可以具有一个或多个取代基的芳基,Rc2和Rc3各自独立地表示氢原子, 可具有一个或多个取代基的脂族烃基或可具有一个或多个取代基的芳族基团,R c4和R c6各自独立地表示氢原子或可具有一个或多个取代基的脂族烃基,或Rc4和Rc6键合 彼此形成烷二基,Rc5表示可具有一个或多个取代基的脂族烃基或可具有一个或两个取代基的氨基,R c7表示氢原子或可具有一个或多个取代基的脂族烃基 ,或Rc5和Rc7彼此键合形成烷二基。
    • 9. 发明申请
    • RESIST PROCESSING METHOD
    • 电阻加工方法
    • US20110171586A1
    • 2011-07-14
    • US13003178
    • 2009-07-07
    • Mitsuhiro HataSatoshi YamamotoTakayuki Miyagawa
    • Mitsuhiro HataSatoshi YamamotoTakayuki Miyagawa
    • G03F7/20
    • G03F7/0035G03F7/0045G03F7/0046G03F7/0397G03F7/2022G03F7/38G03F7/40
    • A resist processing method having the steps of: (1) forming a first resist film by applying a first resist composition comprising: a resin (A) having an acid-labile group, being insoluble or poorly soluble in alkali aqueous solution, and being rendered soluble in alkali aqueous solution through the action of an acid, a photo acid generator (B) and a cross-linking agent (C) onto a substrate and drying; (2) prebaking the first resist film; (3) exposing to a whole surface of the first resist film, and then exposing the first resist film through a mask; (4) post-exposure baking of the first resist film; (5) developing with a first alkali developer to obtain a first resist pattern; (6) hard-baking the first resist pattern, (7) obtaining a second resist film by applying a second resist composition onto the first resist pattern, and then drying; (8) pre baking the second resist film; (9) exposing the second resist film through a mask; (10) post-exposure baking the second resist film; and (11) developing with a second alkali developer to obtain a second resist pattern.
    • 一种抗蚀剂处理方法,具有以下步骤:(1)通过施加第一抗蚀剂组合物形成第一抗蚀剂膜,所述第一抗蚀剂组合物包含:具有酸不稳定基团的树脂(A),其在碱性水溶液中不溶或难溶,并且呈现 通过酸,光酸产生剂(B)和交联剂(C)的作用将其溶解在碱性水溶液中并干燥; (2)预烘第一抗蚀膜; (3)暴露于第一抗蚀剂膜的整个表面,然后通过掩模曝光第一抗蚀剂膜; (4)第一抗蚀剂膜的曝光后烘烤; (5)用第一碱性显影剂显影以获得第一抗蚀剂图案; (6)对第一抗蚀剂图案进行硬烘烤,(7)通过将第二抗蚀剂组合物施加到第一抗蚀剂图案上,然后干燥获得第二抗蚀剂膜; (8)预烘烤第二抗蚀剂膜; (9)通过掩模使第二抗蚀剂膜曝光; (10)曝光后烘烤第二抗蚀膜; 和(11)用第二碱性显影剂显影以获得第二抗蚀剂图案。
    • 10. 发明申请
    • RESIST PROCESSING METHOD
    • 电阻加工方法
    • US20100279226A1
    • 2010-11-04
    • US12810793
    • 2008-12-22
    • Mitsuhiro HataYoshiyuki TakataSatoshi YamaguchiIchiki TakemotoTakayuki MiyagawaYusuke Fuji
    • Mitsuhiro HataYoshiyuki TakataSatoshi YamaguchiIchiki TakemotoTakayuki MiyagawaYusuke Fuji
    • G03F7/004G03F7/20
    • H01L21/0275G03F7/0035G03F7/0045G03F7/0046G03F7/0397G03F7/40
    • The present invention has the object of providing a method of manufacturing a resist pattern in which an extremely fine and highly accurate resist pattern can be formed which is obtained using the resist composition for forming a first resist pattern in a multi-patterning method such as a double patterning method. The resist processing method comprising; forming a first resist film by applying a first resist composition onto a substrate and drying, the first resist composition comprising a resin (A), a photo acid generator (B) and a cross-linking agent (C), the resin (A) having an acid-labile group, being insoluble or poorly soluble in alkali aqueous solution but of being rendered soluble in alkali aqueous solution through the action of an acid; prebaking; exposure processing; post-exposure baking; developing; hard-baking the first resist pattern; and obtaining a second resist film; pre-baking; exposure processing; post-exposure baking; developing to obtain a second resist pattern.
    • 本发明的目的是提供一种制造抗蚀剂图案的方法,其中可以形成极细和高精度的抗蚀剂图案,该抗蚀剂图案是使用多图案化方法中形成第一抗蚀剂图案的抗蚀剂组合物获得的, 双重图案化方法 抗蚀剂处理方法包括: 通过将第一抗蚀剂组合物施加到基材上并干燥来形成第一抗蚀剂膜,所述第一抗蚀剂组合物包含树脂(A),光酸产生剂(B)和交联剂(C),树脂(A) 具有酸不稳定基团,在碱性水溶液中不溶或难溶,但通过酸的作用使其溶于碱水溶液中; 预烘烤 曝光处理; 曝光后烘烤; 发展; 硬烘烤第一抗蚀剂图案; 得到第二抗蚀膜; 预烘烤; 曝光处理; 曝光后烘烤; 显影以获得第二抗蚀剂图案。