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1. 发明申请

US20120287494A1 DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE DISPLAY DEVICE 有权
标题翻译：显示装置和制造显示装置的方法
公开(公告)号：US20120287494A1
公开(公告)日：2012-11-15
申请号：US13429470
申请日：2012-03-26
申请人： Kouhei Takahashi , Takeshi Kuriyagawa , Daisuke Sonoda , Takuo Kaitoh , Katsumi Matsumoto
发明人： Kouhei Takahashi , Takeshi Kuriyagawa , Daisuke Sonoda , Takuo Kaitoh , Katsumi Matsumoto
IPC分类号： G02B26/02 , C23C8/10 , C23C8/12 , G02B5/00
CPC分类号： G02B26/02 , G02B26/0841 , G09G3/3433 , G09G2300/08
摘要： A metal layer is formed on a highly light-transmissive substrate; a resist mask having an opening pattern is formed on the metal layer; exposed portions of the metal layer is etched away in this state to form openings; then the resist mask is removed; and a surface of the metal layer and an inner side wall of each of the openings are oxidized to form a metal oxide layer. Thus, a front surface and a rear surface of the aperture plate are caused to have different reflectances. The oxide layer is formed at the same time as when the resist mask is ashed to remove resist.
摘要翻译：金属层形成在高透光性基板上; 在金属层上形成具有开口图案的抗蚀剂掩模; 在该状态下，金属层的暴露部分被蚀刻掉以形成开口; 然后去除抗蚀剂掩模; 并且金属层的表面和每个开口的内侧壁被氧化以形成金属氧化物层。因此，使孔板的前表面和后表面具有不同的反射率。在抗蚀剂掩模被灰化以除去抗蚀剂的同时形成氧化物层。

2. 发明授权

US09128286B2 Display device and method for manufacturing the display device 有权
标题翻译：用于制造显示装置的显示装置和方法
公开(公告)号：US09128286B2
公开(公告)日：2015-09-08
申请号：US13429470
申请日：2012-03-26
申请人： Kouhei Takahashi , Takeshi Kuriyagawa , Daisuke Sonoda , Takuo Kaitoh , Katsumi Matsumoto
发明人： Kouhei Takahashi , Takeshi Kuriyagawa , Daisuke Sonoda , Takuo Kaitoh , Katsumi Matsumoto
IPC分类号： G02B26/02 , G09G3/34 , G02B26/08
CPC分类号： G02B26/02 , G02B26/0841 , G09G3/3433 , G09G2300/08
摘要： A metal layer is formed on a highly light-transmissive substrate; a resist mask having an opening pattern is formed on the metal layer; exposed portions of the metal layer is etched away in this state to form openings; then the resist mask is removed; and a surface of the metal layer and an inner side wall of each of the openings are oxidized to form a metal oxide layer. Thus, a front surface and a rear surface of the aperture plate are caused to have different reflectances. The oxide layer is formed at the same time as when the resist mask is ashed to remove resist.
摘要翻译：金属层形成在高透光性基板上; 在金属层上形成具有开口图案的抗蚀剂掩模; 在该状态下，金属层的暴露部分被蚀刻掉以形成开口; 然后去除抗蚀剂掩模; 并且金属层的表面和每个开口的内侧壁被氧化以形成金属氧化物层。因此，使孔板的前表面和后表面具有不同的反射率。在抗蚀剂掩模被灰化以除去抗蚀剂的同时形成氧化物层。

3. 发明申请

US20090218574A1 Display device and manufacturing method therefor 审中-公开
标题翻译：显示装置及其制造方法
公开(公告)号：US20090218574A1
公开(公告)日：2009-09-03
申请号：US12379095
申请日：2009-02-12
申请人： Takeshi Noda , Toshio Miyazawa , Takuo Kaitoh , Daisuke Sonoda , Takeshi Kuriyagawa
发明人： Takeshi Noda , Toshio Miyazawa , Takuo Kaitoh , Daisuke Sonoda , Takeshi Kuriyagawa
IPC分类号： H01L33/00
CPC分类号： H01L27/127 , H01L27/1214 , H01L29/66765 , H01L29/78621
摘要： A display device includes a thin film transistor above a substrate, in which the thin film transistor is configured to include a gate electrode, a gate insulating film formed to cover the gate electrode, a semiconductor layer formed to stride over the gate electrode on the gate insulating film, an inter-layer insulating film formed to cover the semiconductor layer, and a pair of electrodes formed to be connected to each of sides of the semiconductor layer interposing the gate electrode therebetween through contact holes formed through the inter-layer insulating film, high concentration impurity layers are formed at each connecting portion of the electrodes of the semiconductor layer, and an annular low-concentration impurity layer is formed to surround at least one of the high concentration impurity layers.
摘要翻译：显示装置包括在基板上方的薄膜晶体管，其中薄膜晶体管被配置为包括栅极电极，形成为覆盖栅电极的栅极绝缘膜，形成为跨越栅极上的栅极电极的半导体层绝缘膜，形成为覆盖半导体层的层间绝缘膜，以及一对电极，其形成为通过穿过该层间绝缘膜形成的接触孔而将半导体层的每一侧连接在其间的栅电极，在半导体层的电极的每个连接部分处形成高浓度杂质层，并且形成环状低浓度杂质层以包围至少一个高浓度杂质层。

4. 发明申请

US20100096645A1 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：显示装置及其制造方法
公开(公告)号：US20100096645A1
公开(公告)日：2010-04-22
申请号：US12579428
申请日：2009-10-15
申请人： Daisuke Sonoda , Toshio Miyazawa , Takuo Kaitoh , Yasukazu Kimura , Takeshi Kuriyagawa , Takeshi Noda
发明人： Daisuke Sonoda , Toshio Miyazawa , Takuo Kaitoh , Yasukazu Kimura , Takeshi Kuriyagawa , Takeshi Noda
IPC分类号： H01L33/00
CPC分类号： H01L27/1288 , H01L27/1214 , H01L27/124 , H01L27/1248
摘要： A manufacturing method of a display device and a display device which can reduce the number of times that an insulation substrate is put into a CVD device and is taken out from the CVD device are provided. The manufacturing method of a display device includes the steps of forming a conductive layer including first electrode films and second electrode films, a first insulation layer, semiconductor films, a second insulation layer and a protective layer on an insulation substrate; forming first resist films having a predetermined thickness which are arranged in first regions above the semiconductor films, opening portions which are arranged in second regions above the second electrode films and second resist films having a large thickness which are arranged in regions other than the first regions and the second regions on the protective layer; etching portions below the second regions, removing the first resist films by ashing; forming first holes which reach the semiconductor films below the first regions and second holes which reach the second electrode films below the second regions; removing the second resist films, and forming lines which are connected to the semiconductor films and lines which are connected to the second electrode films.
摘要翻译：提供了可以减少将绝缘基板放入CVD装置并从CVD装置中取出的次数的显示装置和显示装置的制造方法。显示装置的制造方法包括在绝缘基板上形成包括第一电极膜和第二电极膜的导电层，第一绝缘层，半导体膜，第二绝缘层和保护层的步骤; 形成具有预定厚度的第一抗蚀剂膜，其布置在半导体膜上方的第一区域中，布置在第二电极膜上方的第二区域中的开口部分和布置在除了第一区域之外的区域中的具有大厚度的第二抗蚀剂膜和保护层上的第二区域; 蚀刻第二区域下方的部分，通过灰化去除第一抗蚀剂膜; 形成在第一区域下方到达半导体膜的第一孔和在第二区域下方到达第二电极膜的第二孔; 去除第二抗蚀剂膜，以及形成连接到半导体膜的线和连接到第二电极膜的线。

5. 发明申请

US20090095957A1 Display device and method of manufacturing display device 审中-公开
标题翻译：显示装置及制造显示装置的方法
公开(公告)号：US20090095957A1
公开(公告)日：2009-04-16
申请号：US12285820
申请日：2008-10-15
申请人： Hidekazu Miyake , Takuo Kaitoh , Takeshi Kuriyagawa , Toshio Miyazawa
发明人： Hidekazu Miyake , Takuo Kaitoh , Takeshi Kuriyagawa , Toshio Miyazawa
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L29/78696 , H01L27/1229 , H01L27/1251 , H01L29/66765
摘要： To provide a display device, including a polysilicon thin film transistor, which achieves a reduction of an off current with a simple configuration and with only a slight increase in a number of processes. A display device includes: an insulating substrate, and a thin film transistor formed on the insulating substrate, wherein a semiconductor layer of the thin film transistor has a polysilicon layer, a first amorphous silicon layer formed above the polysilicon layer, and a second amorphous silicon layer formed above the first amorphous silicon layer.
摘要翻译：提供一种包括多晶硅薄膜晶体管的显示装置，其以简单的配置实现了关断电流的降低，并且仅有少量的处理量增加。一种显示装置，包括：绝缘基板和形成在所述绝缘基板上的薄膜晶体管，其中，所述薄膜晶体管的半导体层具有多晶硅层，形成在所述多晶硅层上方的第一非晶硅层，以及第二非晶硅层形成在第一非晶硅层之上。

6. 发明授权

US08368077B2 Display device and manufacturing method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08368077B2
公开(公告)日：2013-02-05
申请号：US12578641
申请日：2009-10-14
申请人： Takeshi Kuriyagawa , Takeshi Noda , Takuo Kaitoh
发明人： Takeshi Kuriyagawa , Takeshi Noda , Takuo Kaitoh
IPC分类号： H01L27/14
CPC分类号： H01L27/124 , H01L27/1248 , H01L29/66765
摘要： A second insulation layer which is formed by stacking a plurality of layers made of different materials in a mutually contact manner is formed such that the second insulation layer covers a source region and a drain region and also covers a gate electrode from above. A first contact hole which reaches one of the source region and the drain region and a recessed portion which is arranged above the gate electrode but is not communicated with the gate electrode are simultaneously formed on the second insulation layer by dry etching. A first line layer is formed so as to cover the first contact hole. After forming the first line layer, a bottom surface of the recessed portion is etched by dry etching thus forming a second contact hole which reaches the gate electrode in the first and second insulation layers. A second line layer is formed on the second contact hole.
摘要翻译：形成通过以相互接触的方式堆叠由不同材料制成的多个层而形成的第二绝缘层，使得第二绝缘层覆盖源极区域和漏极区域并且还从上方覆盖栅极电极。通过干法蚀刻在第二绝缘层上同时形成到达源极区域和漏极区域中的一个的第一接触孔和设置在栅电极上方但不与栅电极连通的凹部。第一线层形成为覆盖第一接触孔。在形成第一线层之后，通过干蚀刻蚀刻凹陷部分的底表面，从而形成到达第一和第二绝缘层中的栅电极的第二接触孔。在第二接触孔上形成第二线层。

7. 发明授权

US08970940B2 Display device and manufacturing method of the display device 有权
标题翻译：显示装置的显示装置及制造方法
公开(公告)号：US08970940B2
公开(公告)日：2015-03-03
申请号：US13526568
申请日：2012-06-19
申请人： Takuo Kaitoh , Takeshi Kuriyagawa , Ryou Sakata , Osamu Karikome , Timothy J. Brosnihan
发明人： Takuo Kaitoh , Takeshi Kuriyagawa , Ryou Sakata , Osamu Karikome , Timothy J. Brosnihan
IPC分类号： G02B26/00 , G02B26/08 , B81B7/00
CPC分类号： G02B26/0841 , B81B7/007 , B81B2201/045 , B81C2201/0132 , B81C2201/016
摘要： The MEMS shutter includes a shutter having an aperture part, a first spring connected to the shutter, a first anchor connected to the first spring, a second spring and a second anchor connected to the second spring, an insulation film on a surface of the shutter, the first spring, the second spring, the first anchor and the second anchor, the surfaces being in a perpendicular direction to a surface of a substrate, and the insulation film is not present on a surface of the plurality of terminals, and a surface of the shutter, the first spring, the second spring, the first anchor and the second anchor, the surfaces being in a parallel direction to a surface of the substrate and on the opposite side of the side facing the substrate.
摘要翻译： MEMS快门包括具有开口部分的快门，连接到快门的第一弹簧，连接到第一弹簧的第一锚杆，连接到第二弹簧的第二弹簧和第二锚固件，在挡板的表面上的绝缘膜所述第一弹簧，所述第二弹簧，所述第一锚固件和所述第二锚固件，所述表面在垂直于基板表面的方向上，并且所述绝缘膜不存在于所述多个端子的表面上，并且所述表面所述第一弹簧，所述第二弹簧，所述第一锚固件和所述第二锚固件，所述表面在与所述基板的表面平行的方向上以及在面向所述基板的所述一侧的相对侧上。

8. 发明授权

US08110833B2 Display device with impurities formed within connection regions 有权
标题翻译：在连接区域内形成杂质的显示装置
公开(公告)号：US08110833B2
公开(公告)日：2012-02-07
申请号：US12536645
申请日：2009-08-06
申请人： Takeshi Kuriyagawa , Takeshi Noda , Takuo Kaitoh
发明人： Takeshi Kuriyagawa , Takeshi Noda , Takuo Kaitoh
IPC分类号： H01L21/336 , H01L33/00
CPC分类号： H01L29/78621 , H01L29/458
摘要： A display device includes: a transparent substrate; gate electrodes which are stacked on the transparent substrate; semiconductor films which are stacked above the gate electrodes and constitute thin film transistors together with the gate electrodes; source electrodes and drain electrodes which are formed above the semiconductor films; an insulation film which is stacked between the source electrodes and the semiconductor films and between the drain electrodes and the semiconductor films; and contact holes which are formed in the insulation film so as to connect the source electrodes and the drain electrodes with the semiconductor films. The semiconductor film includes a connection region which is positioned at least below the contact hole and is connected with the source electrode, and a connection region which is positioned at least below the contact hole and is connected with the drain electrode, and impurities are implanted into the connection regions.
摘要翻译：显示装置包括：透明基板; 层叠在透明基板上的栅电极; 叠层在栅电极上方并与栅电极一起构成薄膜晶体管的半导体膜; 源电极和漏极形成在半导体膜上方; 堆叠在源电极和半导体膜之间以及漏电极和半导体膜之间的绝缘膜; 以及形成在绝缘膜中的接触孔，以便将源电极和漏电极与半导体膜连接。半导体膜包括至少位于接触孔下方并与源电极连接的连接区域以及至少位于接触孔下方并与漏电极连接的连接区域，并将杂质注入连接区域。

9. 发明申请

US20080070351A1 MANUFACTURING METHOD OF DISPLAY DEVICE 有权
标题翻译：显示装置的制造方法
公开(公告)号：US20080070351A1
公开(公告)日：2008-03-20
申请号：US11857481
申请日：2007-09-19
申请人： Eiji Oue , Yasukazu Kimura , Daisuke Sonoda , Toshiyuki Matsuura , Takeshi Kuriyagawa
发明人： Eiji Oue , Yasukazu Kimura , Daisuke Sonoda , Toshiyuki Matsuura , Takeshi Kuriyagawa
IPC分类号： H01L21/84
CPC分类号： H01L27/1288 , H01L27/1255 , H01L29/78645
摘要： In a display device manufacturing method including a step of forming a semiconductor film above a substrate and a step of implanting an impurity to each of a first semiconductor film in a first region of the substrate, a second semiconductor film in a second region outside the first region, and a third semiconductor film in a third region outside the first and second regions, the implanting step includes: a first step of forming a first resist above the substrate so as to be thicker in the first region than in the second region, the first resist covering the first and second regions and having an opening in the third region; a second step of implanting an impurity to only the third semiconductor in the third region using the first resist as a mask; a third step of thinning the first resist so as to form a second resist that covers the first region and has an opening in each of second and third regions; a fourth step of implanting an impurity to the second and third semiconductor films in the second and third regions simultaneously using the second resist as a mask; and a fifth step of implanting an impurity to the first to third semiconductor films in the first to third regions simultaneously.
摘要翻译：在包括在衬底上形成半导体膜的步骤和在衬底的第一区域中向第一半导体膜中的每一个注入杂质的步骤的显示器件制造方法中，在第一区域之外的第二区域中的第二半导体膜区域，以及在第一和第二区域外的第三区域中的第三半导体膜，所述注入步骤包括：第一步骤，在所述衬底上方形成第一抗蚀剂，使其在所述第一区域中比在所述第二区域中更厚，第一抗蚀剂覆盖第一和第二区域并且在第三区域中具有开口; 使用第一抗蚀剂作为掩模将杂质注入第三区域中的第三半导体的第二步骤; 第三步骤，使第一抗蚀剂变薄以形成覆盖第一区域并在第二和第三区域中的每一个具有开口的第二抗蚀剂; 第四步骤，使用第二抗蚀剂作为掩模，将杂质注入第二和第三区域中的第二和第三半导体膜; 以及将第一至第三区域中的第一至第三半导体膜同时注入杂质的第五步骤。

10. 发明授权

US07535024B2 Display device and fabrication method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US07535024B2
公开(公告)日：2009-05-19
申请号：US11600164
申请日：2006-11-16
申请人： Eiji Oue , Toshihiko Itoga , Toshiki Kaneko , Daisuke Sonoda , Takeshi Kuriyagawa
发明人： Eiji Oue , Toshihiko Itoga , Toshiki Kaneko , Daisuke Sonoda , Takeshi Kuriyagawa
IPC分类号： H01L29/04
CPC分类号： H01L29/78621 , H01L29/42384 , H01L29/4908 , H01L29/78696 , H01L2029/7863
摘要： The present invention provides a fabrication method of a display device which aims at the reduction of fabricating man-hours. In a fabrication method of a display device having a thin film transistor in which a gate electrode includes a first gate electrode and a second gate electrode which is overlapped to the first gate electrode and has a size thereof in the channel direction set smaller than the corresponding size of the first gate electrode, the semiconductor layer includes a channel region which is overlapped to the second gate electrode, a first impurity region which is overlapped to the first gate electrode and is formed outside the second gate electrode, a second impurity region which is formed outside the gate electrode, and a third conductive impurity region which is formed outside the gate electrode and the second impurity region, the first impurity region, the second impurity region and the third impurity region are respectively formed of the same conductive type, the impurity concentration of the first impurity region is lower than the impurity concentration of the third impurity region, and the impurity concentration of the second impurity region is lower than the impurity concentration of the first impurity region, impurities are collectively implanted into both of the first and second impurity regions such that the impurities are implanted into the first impurity region by way of the first gate electrode and the impurities are implanted into the second impurity region such that a peak position of the impurity concentration in the depth direction is positioned below the semiconductor layer thus lowering the impurity concentration of the second impurity region than the impurity concentration of the first impurity region.
摘要翻译：本发明提供了一种旨在减少制造工时的显示装置的制造方法。在具有薄膜晶体管的显示装置的制造方法中，其中栅电极包括第一栅极和与第一栅电极重叠并且具有小于相应的沟道方向的尺寸的第二栅电极第一栅电极的尺寸，半导体层包括与第二栅电极重叠的沟道区，与第一栅电极重叠并形成在第二栅电极外的第一杂质区，第二杂质区，形成在栅极电极外部的第三导电杂质区域和形成在栅电极和第二杂质区域外的第三导电杂质区域，第一杂质区域，第二杂质区域和第三杂质区域分别由相同的导电类型形成，杂质第一杂质区域的浓度低于第三杂质区域的杂质浓度第二杂质区域的杂质浓度低于第一杂质区域的杂质浓度，将杂质共同地注入到第一和第二杂质区域中，使得杂质通过第一栅电极注入第一杂质区域并且将杂质注入到第二杂质区域中，使得深度方向上的杂质浓度的峰值位置位于半导体层的下方，从而降低第二杂质区域的杂质浓度比第一杂质区域的杂质浓度降低。

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