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1. 发明申请

US20090218574A1 Display device and manufacturing method therefor 审中-公开
标题翻译：显示装置及其制造方法
公开(公告)号：US20090218574A1
公开(公告)日：2009-09-03
申请号：US12379095
申请日：2009-02-12
申请人： Takeshi Noda , Toshio Miyazawa , Takuo Kaitoh , Daisuke Sonoda , Takeshi Kuriyagawa
发明人： Takeshi Noda , Toshio Miyazawa , Takuo Kaitoh , Daisuke Sonoda , Takeshi Kuriyagawa
IPC分类号： H01L33/00
CPC分类号： H01L27/127 , H01L27/1214 , H01L29/66765 , H01L29/78621
摘要： A display device includes a thin film transistor above a substrate, in which the thin film transistor is configured to include a gate electrode, a gate insulating film formed to cover the gate electrode, a semiconductor layer formed to stride over the gate electrode on the gate insulating film, an inter-layer insulating film formed to cover the semiconductor layer, and a pair of electrodes formed to be connected to each of sides of the semiconductor layer interposing the gate electrode therebetween through contact holes formed through the inter-layer insulating film, high concentration impurity layers are formed at each connecting portion of the electrodes of the semiconductor layer, and an annular low-concentration impurity layer is formed to surround at least one of the high concentration impurity layers.
摘要翻译：显示装置包括在基板上方的薄膜晶体管，其中薄膜晶体管被配置为包括栅极电极，形成为覆盖栅电极的栅极绝缘膜，形成为跨越栅极上的栅极电极的半导体层绝缘膜，形成为覆盖半导体层的层间绝缘膜，以及一对电极，其形成为通过穿过该层间绝缘膜形成的接触孔而将半导体层的每一侧连接在其间的栅电极，在半导体层的电极的每个连接部分处形成高浓度杂质层，并且形成环状低浓度杂质层以包围至少一个高浓度杂质层。

2. 发明申请

US20100096645A1 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：显示装置及其制造方法
公开(公告)号：US20100096645A1
公开(公告)日：2010-04-22
申请号：US12579428
申请日：2009-10-15
申请人： Daisuke Sonoda , Toshio Miyazawa , Takuo Kaitoh , Yasukazu Kimura , Takeshi Kuriyagawa , Takeshi Noda
发明人： Daisuke Sonoda , Toshio Miyazawa , Takuo Kaitoh , Yasukazu Kimura , Takeshi Kuriyagawa , Takeshi Noda
IPC分类号： H01L33/00
CPC分类号： H01L27/1288 , H01L27/1214 , H01L27/124 , H01L27/1248
摘要： A manufacturing method of a display device and a display device which can reduce the number of times that an insulation substrate is put into a CVD device and is taken out from the CVD device are provided. The manufacturing method of a display device includes the steps of forming a conductive layer including first electrode films and second electrode films, a first insulation layer, semiconductor films, a second insulation layer and a protective layer on an insulation substrate; forming first resist films having a predetermined thickness which are arranged in first regions above the semiconductor films, opening portions which are arranged in second regions above the second electrode films and second resist films having a large thickness which are arranged in regions other than the first regions and the second regions on the protective layer; etching portions below the second regions, removing the first resist films by ashing; forming first holes which reach the semiconductor films below the first regions and second holes which reach the second electrode films below the second regions; removing the second resist films, and forming lines which are connected to the semiconductor films and lines which are connected to the second electrode films.
摘要翻译：提供了可以减少将绝缘基板放入CVD装置并从CVD装置中取出的次数的显示装置和显示装置的制造方法。显示装置的制造方法包括在绝缘基板上形成包括第一电极膜和第二电极膜的导电层，第一绝缘层，半导体膜，第二绝缘层和保护层的步骤; 形成具有预定厚度的第一抗蚀剂膜，其布置在半导体膜上方的第一区域中，布置在第二电极膜上方的第二区域中的开口部分和布置在除了第一区域之外的区域中的具有大厚度的第二抗蚀剂膜和保护层上的第二区域; 蚀刻第二区域下方的部分，通过灰化去除第一抗蚀剂膜; 形成在第一区域下方到达半导体膜的第一孔和在第二区域下方到达第二电极膜的第二孔; 去除第二抗蚀剂膜，以及形成连接到半导体膜的线和连接到第二电极膜的线。

3. 发明授权

US08148726B2 Display device and manufacturing method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08148726B2
公开(公告)日：2012-04-03
申请号：US12844887
申请日：2010-07-28
申请人： Takeshi Noda , Toshio Miyazawa , Takuo Kaitoh , Daisuke Sonoda
发明人： Takeshi Noda , Toshio Miyazawa , Takuo Kaitoh , Daisuke Sonoda
IPC分类号： H01L33/013
CPC分类号： H01L29/78621 , G02F1/1368 , H01L29/66765 , H01L29/78627
摘要： A display device which has thin film transistors, wherein a semiconductor layer includes a first layer, second layers and third layers, the first layer has a channel region, the second layers are an impurity layer, the third layers are a low-concentration impurity layer, the second layers have connection portions connected with an electrodes, the third layers are formed to annularly surround the second layers, a channel-region-side edge portion out of edge portions of the third layer is in contact with the first layer, the edge portions of the third layer but the channel-region-side edge portion are in contact with an interlayer insulation film, the second layers have a first region where the second layer overlaps with a gate electrode and a second region where the second layer does not overlap with the gate electrode, and the connection portion is in the second region.
摘要翻译：一种具有薄膜晶体管的显示装置，其中半导体层包括第一层，第二层和第三层，第一层具有沟道区，第二层是杂质层，第三层是低浓度杂质层所述第二层具有与电极连接的连接部，所述第三层形成为环绕所述第二层，所述第三层的边缘部分之外的沟道区域侧边缘部与所述第一层接触，所述边缘第三层的第二层与沟道区侧边缘部分接触层间绝缘膜，第二层具有第一区域，其中第二层与栅电极重叠，第二区与第二层不重叠与栅电极连接，连接部位在第二区域。

4. 发明申请

US20100096632A1 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20100096632A1
公开(公告)日：2010-04-22
申请号：US12578641
申请日：2009-10-14
申请人： Takeshi KURIYAGAWA , Takeshi Noda , Takuo Kaitoh
发明人： Takeshi KURIYAGAWA , Takeshi Noda , Takuo Kaitoh
IPC分类号： H01L27/12 , H01L21/77
CPC分类号： H01L27/124 , H01L27/1248 , H01L29/66765
摘要： A second insulation layer which is formed by stacking a plurality of layers made of different materials in a mutually contact manner is formed such that the second insulation layer covers a source region and a drain region and also covers a gate electrode from above. A first contact hole which reaches one of the source region and the drain region and a recessed portion which is arranged above the gate electrode but is not communicated with the gate electrode are simultaneously formed on the second insulation layer by dry etching. A first line layer is formed so as to cover the first contact hole. After forming the first line layer, a bottom surface of the recessed portion is etched by dry etching thus forming a second contact hole which reaches the gate electrode in the first and second insulation layers. A second line layer is formed on the second contact hole.
摘要翻译：形成通过以相互接触的方式堆叠由不同材料制成的多个层而形成的第二绝缘层，使得第二绝缘层覆盖源极区域和漏极区域并且还从上方覆盖栅极电极。通过干法蚀刻在第二绝缘层上同时形成到达源极区域和漏极区域中的一个的第一接触孔和设置在栅电极上方但不与栅电极连通的凹部。第一线层形成为覆盖第一接触孔。在形成第一线层之后，通过干蚀刻蚀刻凹陷部分的底表面，从而形成到达第一和第二绝缘层中的栅电极的第二接触孔。在第二接触孔上形成第二线层。

5. 发明授权

US08368077B2 Display device and manufacturing method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08368077B2
公开(公告)日：2013-02-05
申请号：US12578641
申请日：2009-10-14
申请人： Takeshi Kuriyagawa , Takeshi Noda , Takuo Kaitoh
发明人： Takeshi Kuriyagawa , Takeshi Noda , Takuo Kaitoh
IPC分类号： H01L27/14
CPC分类号： H01L27/124 , H01L27/1248 , H01L29/66765
摘要： A second insulation layer which is formed by stacking a plurality of layers made of different materials in a mutually contact manner is formed such that the second insulation layer covers a source region and a drain region and also covers a gate electrode from above. A first contact hole which reaches one of the source region and the drain region and a recessed portion which is arranged above the gate electrode but is not communicated with the gate electrode are simultaneously formed on the second insulation layer by dry etching. A first line layer is formed so as to cover the first contact hole. After forming the first line layer, a bottom surface of the recessed portion is etched by dry etching thus forming a second contact hole which reaches the gate electrode in the first and second insulation layers. A second line layer is formed on the second contact hole.
摘要翻译：形成通过以相互接触的方式堆叠由不同材料制成的多个层而形成的第二绝缘层，使得第二绝缘层覆盖源极区域和漏极区域并且还从上方覆盖栅极电极。通过干法蚀刻在第二绝缘层上同时形成到达源极区域和漏极区域中的一个的第一接触孔和设置在栅电极上方但不与栅电极连通的凹部。第一线层形成为覆盖第一接触孔。在形成第一线层之后，通过干蚀刻蚀刻凹陷部分的底表面，从而形成到达第一和第二绝缘层中的栅电极的第二接触孔。在第二接触孔上形成第二线层。

6. 发明授权

US08110833B2 Display device with impurities formed within connection regions 有权
标题翻译：在连接区域内形成杂质的显示装置
公开(公告)号：US08110833B2
公开(公告)日：2012-02-07
申请号：US12536645
申请日：2009-08-06
申请人： Takeshi Kuriyagawa , Takeshi Noda , Takuo Kaitoh
发明人： Takeshi Kuriyagawa , Takeshi Noda , Takuo Kaitoh
IPC分类号： H01L21/336 , H01L33/00
CPC分类号： H01L29/78621 , H01L29/458
摘要： A display device includes: a transparent substrate; gate electrodes which are stacked on the transparent substrate; semiconductor films which are stacked above the gate electrodes and constitute thin film transistors together with the gate electrodes; source electrodes and drain electrodes which are formed above the semiconductor films; an insulation film which is stacked between the source electrodes and the semiconductor films and between the drain electrodes and the semiconductor films; and contact holes which are formed in the insulation film so as to connect the source electrodes and the drain electrodes with the semiconductor films. The semiconductor film includes a connection region which is positioned at least below the contact hole and is connected with the source electrode, and a connection region which is positioned at least below the contact hole and is connected with the drain electrode, and impurities are implanted into the connection regions.
摘要翻译：显示装置包括：透明基板; 层叠在透明基板上的栅电极; 叠层在栅电极上方并与栅电极一起构成薄膜晶体管的半导体膜; 源电极和漏极形成在半导体膜上方; 堆叠在源电极和半导体膜之间以及漏电极和半导体膜之间的绝缘膜; 以及形成在绝缘膜中的接触孔，以便将源电极和漏电极与半导体膜连接。半导体膜包括至少位于接触孔下方并与源电极连接的连接区域以及至少位于接触孔下方并与漏电极连接的连接区域，并将杂质注入连接区域。

7. 发明申请

US20100032681A1 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20100032681A1
公开(公告)日：2010-02-11
申请号：US12536645
申请日：2009-08-06
申请人： Takeshi KURIYAGAWA , Takeshi Noda , Takuo Kaitoh
发明人： Takeshi KURIYAGAWA , Takeshi Noda , Takuo Kaitoh
IPC分类号： H01L33/00 , H01L21/336
CPC分类号： H01L29/78621 , H01L29/458
摘要： A display device includes: a transparent substrate; gate electrodes which are stacked on the transparent substrate; semiconductor films which are stacked above the gate electrodes and constitute thin film transistors together with the gate electrodes; source electrodes and drain electrodes which are formed above the semiconductor films; an insulation film which is stacked between the source electrodes and the semiconductor films and between the drain electrodes and the semiconductor films; and contact holes which are formed in the insulation film so as to connect the source electrodes and the drain electrodes with the semiconductor films. The semiconductor film includes a connection region which is positioned at least below the contact hole and is connected with the source electrode, and a connection region which is positioned at least below the contact hole and is connected with the drain electrode, and impurities are implanted into the connection regions.
摘要翻译：显示装置包括：透明基板; 层叠在透明基板上的栅电极; 叠层在栅电极上方并与栅电极一起构成薄膜晶体管的半导体膜; 源电极和漏极形成在半导体膜上方; 堆叠在源电极和半导体膜之间以及漏电极和半导体膜之间的绝缘膜; 以及形成在绝缘膜中的接触孔，以便将源电极和漏极连接到半导体膜。半导体膜包括至少位于接触孔下方并与源电极连接的连接区域以及至少位于接触孔下方并与漏电极连接的连接区域，并将杂质注入连接区域。

8. 发明授权

US08124974B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US08124974B2
公开(公告)日：2012-02-28
申请号：US12536097
申请日：2009-08-05
申请人： Takeshi Noda , Toshio Miyazawa , Takuo Kaitoh , Takumi Shigaki
发明人： Takeshi Noda , Toshio Miyazawa , Takuo Kaitoh , Takumi Shigaki
IPC分类号： H01L33/00
CPC分类号： G02F1/13624 , G02F2202/104
摘要： A display device is provided in which at least first and second thin film transistors are formed on a substrate, including a gate electrode formed on a semiconductor layer with a gate insulating film in between. The semiconductor layer is divided into individual regions for each film transistor, and is provided with a common region and LDD regions between a channel region and a drain region, as well as between the channel region and a source region. The gate electrode is formed as an integrated gate electrode for the first and second thin film transistors that faces the common region, the channel region and the LDD regions of the first thin film transistor and the channel region and the LDD regions of the second thin film transistor.
摘要翻译：提供了一种显示装置，其中至少第一和第二薄膜晶体管形成在基板上，包括形成在其间具有栅极绝缘膜的半导体层上的栅电极。半导体层被分成用于每个薄膜晶体管的单个区域，并且在沟道区域和漏极区域之间以及在沟道区域和源极区域之间设置有公共区域和LDD区域。栅电极形成为第一和第二薄膜晶体管的集成栅电极，其面对公共区域，第一薄膜晶体管的沟道区域和LDD区域以及第二薄膜的沟道区域和LDD区域晶体管。

9. 发明申请

US20080308811A1 Display device 有权
标题翻译：显示设备
公开(公告)号：US20080308811A1
公开(公告)日：2008-12-18
申请号：US12155788
申请日：2008-06-10
申请人： Hidekazu Miyake , Takuo Kaitoh , Takeshi Noda , Toshio Miyazawa
发明人： Hidekazu Miyake , Takuo Kaitoh , Takeshi Noda , Toshio Miyazawa
IPC分类号： H01L33/00
CPC分类号： H01L27/124 , G02F1/1368
摘要： The present invention provides a display device having thin film transistors which can reduce an OFF current in spite of the extremely simple constitution. In the display device having thin film transistors on a substrate, each thin film transistor includes a gate electrode which is connected with a gate signal line, a semiconductor layer which is formed astride the gate electrode by way of an insulation film, a drain electrode which is connected with a drain signal line and is formed on the semiconductor layer, and a source electrode which is formed on the semiconductor layer in a state that the source electrode faces the drain electrode in an opposed manner, and a side of the drain electrode which faces the source electrode does not overlap the gate electrode as viewed in a plan view, and a side of the source electrode which faces the drain electrode does not overlap the gate electrode as viewed in a plan view.
摘要翻译：本发明提供了一种具有薄膜晶体管的显示装置，尽管结构非常简单，但可以减小关断电流。在基板上具有薄膜晶体管的显示装置中，每个薄膜晶体管包括与栅极信号线连接的栅电极，通过绝缘膜跨越栅电极的半导体层，漏电极与漏极信号线连接并形成在半导体层上，并且以与源电极相对的方式形成在漏电极的状态的半导体层上形成的源电极和漏电极的一侧如平面图所示，面源极电极不与栅电极重叠，源极电极的面对漏电极的一侧与平面图中的栅电极不重叠。

10. 发明授权

US08124975B2 Display device with multi-gate TFTs of a pixel region having different relative areas of gate regions with respect to channel regions of the TFTs 有权
标题翻译：具有相对于TFT的沟道区域具有不同栅极区相对面积的像素区域的多栅极TFT的显示装置
公开(公告)号：US08124975B2
公开(公告)日：2012-02-28
申请号：US12608147
申请日：2009-10-29
申请人： Takeshi Noda , Toshio Miyazawa , Takuo Kaitoh , Hiroyuki Abe
发明人： Takeshi Noda , Toshio Miyazawa , Takuo Kaitoh , Hiroyuki Abe
IPC分类号： H01L33/00
CPC分类号： H01L29/78645 , H01L27/1214 , H01L29/42384 , H01L29/78621 , H01L29/78627
摘要： Provided is a display device capable of suppressing generation of optical leakage current as well as increase in capacitance in a case where a plurality of thin film transistors (TFTs) including a gate electrode film on a light source side are formed in series. Relative areas of opposing regions between a semiconductor film and the gate electrode film with respect to channel regions are different in at least a part of the plurality of TFTs, to thereby provide a flat panel display having a structure for suppressing increase in capacitance while suppressing generation of optical leakage current.
摘要翻译：提供了在包括在光源侧的栅电极膜串联形成的多个薄膜晶体管（TFT）的情况下能够抑制漏电流的产生以及电容增加的显示装置。在多个TFT的至少一部分中，半导体膜与栅电极膜之间的相对区域相对于沟道区的相对区域是不同的，从而提供具有抑制电容增加的结构的平板显示器，同时抑制发生的漏光电流。

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