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1. 发明授权

US08670082B2 Thin film transistor, display device and liquid crystal display device 有权
标题翻译：薄膜晶体管，显示装置和液晶显示装置
公开(公告)号：US08670082B2
公开(公告)日：2014-03-11
申请号：US13242283
申请日：2011-09-23
申请人： Takeshi Noda , Takuo Kaitoh , Hidekazu Miyake , Takeshi Sakai
发明人： Takeshi Noda , Takuo Kaitoh , Hidekazu Miyake , Takeshi Sakai
IPC分类号： G02F1/136 , H01L29/04
CPC分类号： H01L29/66765 , G02F1/136209 , H01L29/78633
摘要： A thin film transistor, a display device and a liquid crystal display device are provided. The thin film transistor includes a gate electrode film onto which light from a light source is irradiated, a semiconductor film formed on the gate electrode film and on an opposite side to the light source side through an insulating film, first and second electrode films formed to be in electrical contact with the semiconductor film, and a first shielding film formed in a same layer as the gate electrode film and electrically isolated from the gate electrode film, wherein the first shielding film overlaps a part of the semiconductor film as seen from the light irradiation direction and also overlaps at least a part of the first electrode film as seen from the light irradiation direction.
摘要翻译：提供薄膜晶体管，显示装置和液晶显示装置。薄膜晶体管包括：栅极电极膜，其上照射有来自光源的光，通过绝缘膜形成在栅极电极膜上并且在与光源侧相反的一侧的半导体膜，第一和第二电极膜形成为与半导体膜电接触;以及第一屏蔽膜，其形成在与栅极电极膜相同的层中并与栅极电极膜电隔离，其中第一屏蔽膜与从该光看到的半导体膜的一部分重叠照射方向，并且从光照射方向观察，还与第一电极膜的至少一部分重叠。

2. 发明授权

US08049255B2 Display device and method of manufacturing the same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08049255B2
公开(公告)日：2011-11-01
申请号：US12155504
申请日：2008-06-05
申请人： Takeshi Sakai , Toshio Miyazawa , Takuo Kaitoh , Hidekazu Miyake
发明人： Takeshi Sakai , Toshio Miyazawa , Takuo Kaitoh , Hidekazu Miyake
IPC分类号： H01L31/062
CPC分类号： H01L27/1214 , H01L29/41733 , H01L29/458 , H01L29/66765 , H01L29/78618 , H01L29/78678
摘要： A semiconductor device includes an insulating substrate and a TFT element disposed on the substrate. The TFT element includes a gate electrode, a gate insulating film, a semiconductor layer, and a source electrode and a drain electrode arranged in that order on the insulating substrate. The semiconductor layer includes an active layer composed of polycrystalline semiconductor and a contact layer segment interposed between the active layer and the source electrode and another contact layer segment interposed between the active layer and the drain electrode. The source and drain electrodes each have a first face facing the opposite face of the active layer from the interface with the gate insulating layer and a second face facing an etched side face of the active layer. Each contact layer segment is disposed between the active layer and each of the first and second faces of the source or drain electrode.
摘要翻译：半导体器件包括绝缘基板和设置在基板上的TFT元件。 TFT元件包括在绝缘基板上依次排列的栅电极，栅极绝缘膜，半导体层以及源电极和漏电极。半导体层包括由多晶半导体构成的有源层和介于有源层与源电极之间的接触层段，以及介于有源层和漏电极之间的另一接触层段。源极和漏极各自具有面对与有源层的界面相对的有源层的相对面的第一面和与有源层的蚀刻侧面对置的第二面。每个接触层段设置在源极或漏极之间的有源层和第一和第二表面中的每一个之间。

3. 发明申请

US20110221985A1 LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US20110221985A1
公开(公告)日：2011-09-15
申请号：US13042490
申请日：2011-03-08
申请人： Terunori SAITOU , Hidekazu Miyake , Takuo Kaitoh , Yoshiharu Owaku
发明人： Terunori SAITOU , Hidekazu Miyake , Takuo Kaitoh , Yoshiharu Owaku
IPC分类号： G02F1/133 , H01J9/20
CPC分类号： G02F1/13458 , G02F1/1333 , G02F1/136204 , G02F2001/133388 , G02F2202/103 , G02F2202/22
摘要： In order to prevent dielectric breakdown of TFT or an interlayer insulating film by static electricity with a reduced area at low cost, a liquid crystal display device has a configuration in which an interlayer insulating film and an a-Si film are formed in a display area and a control area inside terminals. Image signal lines and scan lines are insulated from each other through the interlayer insulating film and a-Si film in their intersections. On the other hand, only the interlayer insulating film is formed between static electricity protection lines and an earth line outside the terminals. When static electricity is induced, dielectric breakdown is caused to occur in the area outside the terminals. Thus, the display area and the control area are protected from the static electricity.
摘要翻译：为了以低成本减小面积的静电来防止TFT或层间绝缘膜的电介质击穿，液晶显示装置具有在显示区域中形成层间绝缘膜和a-Si膜的构造和端子内部的控制区域。图像信号线和扫描线通过其交叉点中的层间绝缘膜和a-Si膜彼此绝缘。另一方面，在静电保护线与端子外的接地线之间仅形成层间绝缘膜。当感应到静电时，导致端子外部的区域发生介电击穿。因此，显示区域和控制区域被保护免受静电。

4. 发明授权

US07994505B2 Liquid crystal display device 有权
标题翻译：液晶显示装置
公开(公告)号：US07994505B2
公开(公告)日：2011-08-09
申请号：US12534904
申请日：2009-08-04
申请人： Terunori Saitou , Yoshiharu Owaku , Takuo Kaitoh , Hidekazu Miyake
发明人： Terunori Saitou , Yoshiharu Owaku , Takuo Kaitoh , Hidekazu Miyake
IPC分类号： H01L33/00
CPC分类号： H01L29/78696 , H01L27/1229 , H01L27/1251 , H01L29/04
摘要： A liquid crystal display device includes a semiconductor layer which is formed of a poly-Si layer and an a-Si layer and formed above a gate electrode with a gate insulating film interposed therebetween. A source electrode or a drain electrode is formed above the semiconductor layer. An n+Si layer is formed between the source electrode or the drain electrode and the semiconductor layer. Since ends of the source electrode or the drain electrode are formed inside ends of the semiconductor layer, leak current at the ends of the semiconductor layer can be reduced.
摘要翻译：液晶显示装置包括由多晶硅层和a-Si层形成的半导体层，并形成在栅电极之上，栅极绝缘膜插入其间。源电极或漏电极形成在半导体层的上方。在源极或漏电极与半导体层之间形成n + Si层。由于源电极或漏电极的端部形成在半导体层的内侧端部，所以能够减小半导体层的端部处的漏电流。

5. 发明授权

US07864172B2 Cathode potential controller, self light emission display device, electronic apparatus, and cathode potential controlling method 有权
标题翻译：阴极电位控制器，自发光显示装置，电子装置和阴极电位控制方法
公开(公告)号：US07864172B2
公开(公告)日：2011-01-04
申请号：US12153554
申请日：2008-05-21
申请人： Hidekazu Miyake , Mitsuru Tada , Tomoaki Handa , Atsushi Ozawa
发明人： Hidekazu Miyake , Mitsuru Tada , Tomoaki Handa , Atsushi Ozawa
IPC分类号： G09F5/00 , G09G3/10
CPC分类号： G09G3/3233 , G09G3/3291 , G09G2300/0842 , G09G2300/0866 , G09G2320/029 , G09G2320/041 , G09G2330/028 , G09G2360/16
摘要： A cathode potential controller for controlling a common cathode potential applied to a self light emission type display panel in which an emission state of each of pixels is driven and controlled in accordance with an active matrix drive system, the cathode potential controller including: a self light emitting element; a constant current source; an electrode-to-electrode voltage measuring portion; a cathode potential determining portion; and a cathode potential applying portion.
摘要翻译：一种用于控制施加到自发光型显示面板的公共阴极电位的阴极电位控制器，其中根据有源矩阵驱动系统驱动和控制每个像素的发射状态，所述阴极电位控制器包括：自发光发光元件; 恒流源; 电极对电极电压测量部分; 阴极电位确定部分; 和阴极电位施加部。

6. 发明申请

US20100253707A1 DISPLAY DEVICE 审中-公开
标题翻译：显示设备
公开(公告)号：US20100253707A1
公开(公告)日：2010-10-07
申请号：US12729750
申请日：2010-03-23
申请人： Hidekazu Miyake
发明人： Hidekazu Miyake
IPC分类号： G09G3/32 , G09G5/10
CPC分类号： G09G3/3233 , G09G2300/0842 , G09G2310/0216 , G09G2320/0209 , G09G2320/0223
摘要： There is provided a display device capable of reducing a horizontal crosstalk. The display device includes: a plurality of light emitting elements two-dimensionally arranged in a horizontal direction and a vertical direction, and including an anode electrode, a light emitting layer, and a cathode electrode; and a voltage generating circuit applying a correction voltage corresponding to a video signal of one horizontal line to the cathode electrode.
摘要翻译：提供了能够减少水平串扰的显示装置。显示装置包括：在水平方向和垂直方向上二维排列的多个发光元件，包括阳极电极，发光层和阴极电极; 以及将与一条水平线的视频信号相对应的校正电压施加到阴极的电压产生电路。

7. 发明申请

US20090218575A1 Display device and manufacturing method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20090218575A1
公开(公告)日：2009-09-03
申请号：US12379662
申请日：2009-02-26
申请人： Hidekazu Miyake , Eiji Oue , Takuo Kaitoh , Toshio Miyazawa
发明人： Hidekazu Miyake , Eiji Oue , Takuo Kaitoh , Toshio Miyazawa
IPC分类号： H01L33/00 , H01L21/336
CPC分类号： H01L27/12 , H01L27/124 , H01L27/1251 , H01L27/1288 , H01L29/458 , H01L29/66765
摘要： Provided is a display device including a p-type thin film transistor formed on a substrate, in which the p-type thin film transistor includes: a gate electrode; a drain electrode; a source electrode; an insulating film; a semiconductor layer formed on a top surface of the gate electrode through the insulating film; and diffusion layers of p-type impurities formed at each of an interface between the drain electrode and the semiconductor layer and an interface between the source electrode and the semiconductor layer, the drain electrode and the source electrode being formed so as to be opposed to each other with a clearance formed therebetween on a top surface of the semiconductor layer.
摘要翻译：提供了一种显示装置，其包括形成在基板上的p型薄膜晶体管，其中p型薄膜晶体管包括：栅电极; 漏电极; 源电极; 绝缘膜; 通过绝缘膜形成在栅电极的顶表面上的半导体层; 以及在漏电极和半导体层之间的界面处形成的p型杂质的扩散层以及源电极和半导体层之间的界面，漏电极和源电极形成为与每个另一个在半导体层的顶表面之间形成有间隙。

8. 发明授权

US07417175B2 Interstitial prostatism model animal 失效
标题翻译：间质性前列腺炎模型动物
公开(公告)号：US07417175B2
公开(公告)日：2008-08-26
申请号：US10477077
申请日：2002-05-08
申请人： Nobuyuki Oda , Kazuhisa Miyoshi , Akihiro Haruno , Hidekazu Miyake
发明人： Nobuyuki Oda , Kazuhisa Miyoshi , Akihiro Haruno , Hidekazu Miyake
IPC分类号： A01K67/00 , A01K67/027
CPC分类号： C12N5/0683 , A01K67/0271 , A01K2227/105 , A01K2267/0331 , G01N33/6893 , G01N2800/342
摘要： The present invention provides an animal model for prostatic stromal hyperplasia, and a method for screening for a substance effective for preventing/treating human benign prostatic hyperplasia using the animal model. The animal model for prostatic stromal hyperplasia is produced by implanting the fetal urogenital sinus of a non-human animal under the skin or beneath the prostatic capsule of a non-human animal belonging to the species of the same as or different from the animal. A substance effective for preventing/treating human benign prostatic hyperplasia can be screened by administering a test substance to the animal model and measuring the preventive or therapeutic effect of the test substance upon the implanted tissue (fetal urogenital sinus or tissue derived therefrom).
摘要翻译：本发明提供前列腺基质增生的动物模型，以及使用动物模型筛选有效预防/治疗人类前列腺增生的物质的方法。用于前列腺基质增生的动物模型通过将非人类动物的胎儿泌尿生殖窦植入属于与动物相同或不同的物种的非人动物的皮肤或前列腺胶囊下方而产生。可以通过向动物模型施用测试物质并测量被检物质对植入的组织（胎儿泌尿生殖窦或由其衍生的组织）的预防或治疗效果来筛选有效预防/治疗人类良性前列腺增生的物质。

9. 发明授权

US08908116B2 Liquid crystal display device 有权
标题翻译：液晶显示装置
公开(公告)号：US08908116B2
公开(公告)日：2014-12-09
申请号：US13277262
申请日：2011-10-20
申请人： Jun Fujiyoshi , Yasukazu Kimura , Hideo Tanabe , Masataka Okamoto , Hidekazu Miyake
发明人： Jun Fujiyoshi , Yasukazu Kimura , Hideo Tanabe , Masataka Okamoto , Hidekazu Miyake
IPC分类号： G02F1/136 , G02F1/1335 , G02F1/1343 , G02F1/1362
CPC分类号： G02F1/133305 , G02F1/133345 , G02F1/133514 , G02F1/134363 , G02F1/136227 , G02F1/1368
摘要： A liquid crystal display device includes a first substrate and a second substrate with a liquid crystal layer therebetween. The first substrate includes drain lines, gate lines, thin-film transistors that output signals to pixel electrodes, and an organic film that is formed between each thin-film transistor and each pixel electrode. The organic film has a contact hole for electrical connection between a source electrode of each thin-film transistor and each pixel electrode. A step is formed in a layer underlying the organic film and an edge portion of the organic film toward the thin-film transistor, the edge portion forming the contact hole, being formed to lie on a lower plane of the step. A sidewall part of the contact hole which is formed in the organic film is formed to have a taper angle of at least 60 degrees.
摘要翻译：液晶显示装置包括第一基板和其间具有液晶层的第二基板。第一衬底包括漏极线，栅极线，向像素电极输出信号的薄膜晶体管，以及形成在每个薄膜晶体管和每个像素电极之间的有机膜。有机膜具有用于在每个薄膜晶体管的源电极和每个像素电极之间进行电连接的接触孔。在有机膜下面的层和朝向薄膜晶体管的有机膜的边缘部分形成台阶，形成接触孔的边缘部分位于台阶的下平面上。形成在有机膜中的接触孔的侧壁部形成为具有至少60度的锥角。

10. 发明申请

US20120223315A1 DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME 审中-公开
标题翻译：其显示装置及其制造方法
公开(公告)号：US20120223315A1
公开(公告)日：2012-09-06
申请号：US13406548
申请日：2012-02-28
申请人： Norihiro UEMURA , Hidekazu MIYAKE , Isao SUZUMURA , Takeshi KURIYAGAWA
发明人： Norihiro UEMURA , Hidekazu MIYAKE , Isao SUZUMURA , Takeshi KURIYAGAWA
IPC分类号： H01L29/786 , H01L33/08
CPC分类号： H01L29/78669 , H01L29/78609 , H01L29/78678
摘要： Disclosed is a display device including: a gate electrode; a semiconductor layer formed into an island shape on an upper side of the gate electrode; a side wall oxide film formed on a lateral surface of the semiconductor layer; and a drain electrode and a source electrode formed on an upper side of the semiconductor layer extending from a lateral side of the semiconductor layer, wherein the side wall oxide film has a thickness of 2.1 nm or more.
摘要翻译：公开了一种显示装置，包括：栅电极; 在栅电极的上侧形成为岛状的半导体层; 形成在半导体层的侧表面上的侧壁氧化膜; 以及形成在半导体层的从半导体层的侧面延伸的上侧的漏电极和源电极，其中，所述侧壁氧化膜的厚度为2.1nm以上。

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