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1. 发明授权

US06764548B2 Apparatus and method for producing silicon semiconductor single crystal 有权
标题翻译：硅半导体单晶的制造方法及其制造方法
公开(公告)号：US06764548B2
公开(公告)日：2004-07-20
申请号：US10204278
申请日：2002-08-20
申请人： Ryoji Hoshi , Takahiro Yanagimachi , Izumi Fusegawa , Tomohiko Ohta , Yuuichi Miyahara , Tetsuya Igarashi
发明人： Ryoji Hoshi , Takahiro Yanagimachi , Izumi Fusegawa , Tomohiko Ohta , Yuuichi Miyahara , Tetsuya Igarashi
IPC分类号： C30B3500
CPC分类号： C30B15/14 , C30B15/206 , C30B29/06 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： The present invention provides an apparatus and a method for producing a silicon semiconductor single crystal which can stabilize and homogenize an amount of precipitated oxygen in the direction of the crystal growth axis when growing a silicon semiconductor single crystal. The apparatus for producing a silicon semiconductor single crystal by the Czochralski method comprises a main growth furnace having a crucible retaining silicon melt disposed therein for growing a silicon semiconductor single crystal, and an upper growth furnace for housing therein and cooling the silicon semiconductor single crystal pulled from the silicon melt, wherein the upper growth furnace communicated to a ceiling section of the main growth furnace is provided with an upper insulating member for surrounding a pulled silicon semiconductor single crystal.
摘要翻译：本发明提供了一种用于制造硅半导体单晶的装置和方法，当生长硅半导体单晶时，可以使晶体生长轴方向上的沉淀氧量稳定和均化。通过切克劳斯基法生产硅半导体单晶的装置包括：主生长炉，其具有保存硅熔体的坩埚，用于生长硅半导体单晶;以及上部生长炉，用于容纳在其中并冷却硅半导体单晶拉伸与硅熔体相连，其中与主生长炉的顶部连通的上部生长炉设置有用于围绕拉制硅半导体单晶的上部绝缘构件。

2. 发明授权

US6153009A Method for producing a silicon single crystal and the silicon single crystal produced thereby 失效
标题翻译：制造硅单晶的方法和由此制造的硅单晶
公开(公告)号：US6153009A
公开(公告)日：2000-11-28
申请号：US270277
申请日：1999-03-16
申请人： Toshiharu Uesugi , Toshio Hisaichi , Izumi Fusegawa , Tomohiko Ohta , Tetsuya Igarashi , Tetsuhiro Oda
发明人： Toshiharu Uesugi , Toshio Hisaichi , Izumi Fusegawa , Tomohiko Ohta , Tetsuya Igarashi , Tetsuhiro Oda
IPC分类号： C30B15/00 , C30B15/20
CPC分类号： C30B29/06 , C30B15/00
摘要： In a Czochralski method for producing a silicon single crystal by growing the crystal, the pulling rate of the single crystal is gradually increased during formation of a tail part after formation of a predetermined or constant diameter part of the single crystal. The length t of the tail part is defined to be a or more, where a represents a distance from the tip end of the tail part to a position of an extraordinary oxygen precipitation area when the tail part is formed after the predetermined or constant diameter part is grown. Productivity and yield of the silicon single crystal are improved by preventing rapid change in temperature while the single crystal is separated from the melt in the tailing process, to suppress generation of an area where the amount of precipitated oxygen is extraordinarily large and an OSF ring due to rapid increase in temperature when the tail part is formed, in the predetermined or constant diameter part near the tail part.
摘要翻译：在通过生长晶体生产硅单晶的切克劳斯基法中，在形成单晶的预定或恒定直径部分之后形成尾部部分期间，单晶的拉伸速率逐渐增加。尾部的长度t被定义为一个或多个，其中a表示当尾部在预定的或恒定的直径部分之后形成时从尾部的末端到非常的氧沉淀区域的位置的距离长大了通过在拖尾工序中从熔体中分离单晶而防止温度快速变化，提高硅单晶的生产率和产率，抑制沉淀氧量异常大的区域和OSF环的产生当尾部形成时，在靠近尾部的预定或恒定直径部分中的温度快速增加。

3. 发明申请

US20070141502A1 Ferrite carrier core material for electrophotography, ferrite carrier for electrophotography and methods for producing them, and electrophotographic developer using the ferrite carrier 审中-公开
标题翻译：用于电子照相的铁氧体载体芯材料，用于电子照相的铁氧体载体及其制备方法，以及使用该铁氧体载体的电子照相显影剂
公开(公告)号：US20070141502A1
公开(公告)日：2007-06-21
申请号：US11446594
申请日：2006-06-05
申请人： Koji Aga , Takeshi Naito , Tetsuya Igarashi , Toshio Honjo
发明人： Koji Aga , Takeshi Naito , Tetsuya Igarashi , Toshio Honjo
IPC分类号： G03G9/113
CPC分类号： G03G9/107 , G03G9/1075 , G03G9/1136 , G03G9/1139
摘要： A ferrite carrier core material for electrophotography having a homogeneous composition, a certain surface property, a favorable fluidity, a high magnetization and a low resistance, and a ferrite carrier for electrophotography methods for producing them, and an electrophotographic developer using the ferrite carrier-core material, which exhibits a fast charge rising and a stable charge quantity with time, are provided. A ferrite carrier core material for electrophotography whose surface is divided by grooves or streaks into 2 to 50 regions per 10 μm and which has a manganese ferrite as a main component, and a method for producing the ferrite carrier core material for electrophotography using an Fe—Mn composite oxide as the raw material, and a method for producing a ferrite carrier for electrophotography are employed.
摘要翻译：用于电子照相的铁素体载体芯材料具有均匀的组成，一定的表面性质，良好的流动性，高磁化强度和低电阻，以及用于制备它们的电子照相方法的铁氧体载体，以及使用铁氧体载体芯的电子照相显影剂提供了表现出快速充电和随时间稳定的电荷量的材料。一种用于电子照相的铁氧体载体芯材料，其表面被槽或条纹划分成每10个月2至50个区域，并且以铁氧体为主要成分的铁电体载体芯材，以及制备用于电子照相的铁氧体载体芯材的方法， Mn复合氧化物为原料，采用电子照相用铁氧体载体的制造方法。

4. 发明授权

US06498288B1 Silicon germanium crystal 失效
标题翻译：硅锗晶体
公开(公告)号：US06498288B1
公开(公告)日：2002-12-24
申请号：US09582237
申请日：2000-07-24
申请人： Takao Abe , Ichiro Yonenaga , Tetsuya Igarashi
发明人： Takao Abe , Ichiro Yonenaga , Tetsuya Igarashi
IPC分类号： H01L3500
CPC分类号： C30B15/00 , C30B29/52
摘要： Provided is an SiGe crystal having an improved performance index and excellent machinability as a material constituting a thermoelectric element, neither degradation in characteristics nor cracking occurring during use. Crystal grains forming the crystal are 5×10−5 mm3 or more in size.
摘要翻译：提供具有改进的性能指数和作为构成热电元件的材料的优良机械加工性的SiGe晶体，在使用过程中既不降低特性也不发生开裂。形成晶体的晶粒尺寸为5×10 -5 mm 3以上。

5. 发明授权

US09557682B2 Resin-coated carrier for electrophotographic developer and electrophotographic developer using the resin-coated carrier 有权
标题翻译：用于电子照相显影剂的树脂涂覆载体和使用树脂涂覆的载体的电子照相显影剂
公开(公告)号：US09557682B2
公开(公告)日：2017-01-31
申请号：US13435316
申请日：2012-03-30
申请人： Takao Sugiura , Tetsuya Igarashi
发明人： Takao Sugiura , Tetsuya Igarashi
IPC分类号： G03G9/00 , G03G15/08 , G03G9/10 , G03G9/107 , G03G9/113
CPC分类号： G03G15/0818 , G03G9/10 , G03G9/107 , G03G9/113
摘要： Object of the present invention is to provide a resin-coated carrier for an electrophotographic developer with reduced carrier weight, carrier beads carry over is prevented, and further, excellent in carrier strength and stable charging property in endurance printing. To achieve the object, the carrier having a coated resin layer on the surface of a porous ferrite core material and the pore volume and the peak pore size of the porous ferrite core material are 55 to 160 mm3/g and 0.2 to 0.7 μm, respectively, and an electrophotographic developer using the resin-coated carrier is adopted.
摘要翻译：本发明的目的是提供一种用于电子照相显影剂的树脂涂布载体，其载体重量减小，防止载体珠粒携带，并且进一步优异的载体强度和耐久性印刷中的稳定带电性能。为了达到上述目的，在多孔铁氧体磁芯材料的表面上具有涂布树脂层的载体和多孔铁氧体磁芯材料的孔体积和峰值孔径分别为55〜160mm 3 / g和0.2〜0.7μm 并且采用使用树脂涂布载体的电子照相显影剂。

6. 发明申请

US20110013948A1 CORE MATERIAL OF CARRIER FOR ELECTROPHOTOGRAPHIC DEVELOPER AND METHOD FOR MANUFACTURING THE CORE MATERIAL, CARRIER AND METHOD FOR MANUFACTURING THE CARRIER, AND ELECTROPHOTOGRAPHIC DEVELOPER USING THE CARRIER 审中-公开
标题翻译：用于制造电子显影剂的载体的核心材料和制造用于制造载体的核心材料，载体和方法以及使用载体的电子显影开发的方法
公开(公告)号：US20110013948A1
公开(公告)日：2011-01-20
申请号：US12921408
申请日：2009-02-27
申请人： Koji Aga , Issei Shinmura , Tetsuya Igarashi
发明人： Koji Aga , Issei Shinmura , Tetsuya Igarashi
IPC分类号： G03G15/08 , G03G9/10 , G03G9/107 , G03G9/113
CPC分类号： G03G9/1075 , G03G9/1131 , G03G9/1132
摘要： Objects of the present invention are to provide a carrier core material for an electrophotographic developer having a true spherical shape and excellent strength, and a controllable true density and/or apparent density, and a method for manufacturing the carrier core material, a carrier and a method for manufacturing the carrier, and an electrophotographic developer using the carrier. In order to achieve the objects, there are employed a carrier core material for an electrophotographic developer, containing 3 to 100% by number of hollow particles having an iron content of 36 to 78% by weight, and a carrier for an electrophotographic developer, obtained by coating a resin on a surface of the carrier core material, and methods for manufacturing these, and an electrophotographic developer using the carrier.
摘要翻译：本发明的目的是提供一种用于具有真实球形和优异强度以及可控的真实密度和/或表观密度的电子照相显影剂的载体芯材料，以及用于制造载体芯材料，载体和制造载体的方法和使用载体的电子照相显影剂。为了实现上述目的，采用了一种电子照相显影剂用载体芯材，其含有3〜100个数量的铁含量为36〜78重量％的中空粒子，得到电子照相显影剂用载体通过在载体芯材的表面上涂布树脂及其制造方法和使用该载体的电子照相显影剂。

7. 发明申请

US20090197194A1 CARRIER CORE MATERIAL FOR ELECTROPHOTOGRAPHIC DEVELOPER, CARRIER AND ELECTROPHOTOGRAPHIC DEVELOPER USING THE CARRIER 有权
标题翻译：使用载体的电子显影开发商，载体和电子显影开发商的载体核心材料
公开(公告)号：US20090197194A1
公开(公告)日：2009-08-06
申请号：US12362571
申请日：2009-01-30
申请人： Koji Aga , Issei Shinmura , Tetsuya Igarashi
发明人： Koji Aga , Issei Shinmura , Tetsuya Igarashi
IPC分类号： G03G9/083
CPC分类号： G03G9/107 , G03G9/08 , G03G9/10 , G03G9/1075 , G03G9/113 , G03G9/1131
摘要： There are adopted: a carrier core material for an electrophotographic developer, including Mg, Ti and Fe as main components, and containing Fe, Mg and Ti in contents of 52 to 66% by weight, 3 to 12% by weight and 0.2 to 12% by weight, respectively; an electrophotographic developer carrier prepared by coating with a resin the surface of the carrier core material; and an electrophotographic developer using the carrier.
摘要翻译：采用以电子照相显影剂为载体芯材，以Mg，Ti，Fe为主要成分，含有52〜66重量％，3〜12重量％，0.2〜12重量份的Fe，Mg，Ti 重量％通过用树脂涂覆载体芯材的表面制备的电子照相显影剂载体; 和使用该载体的电子照相显影剂。

8. 发明授权

US06544656B1 Production method for silicon wafer and silicon wafer 有权
标题翻译：硅晶片和硅晶片的生产方法
公开(公告)号：US06544656B1
公开(公告)日：2003-04-08
申请号：US09674841
申请日：2000-11-07
申请人： Takao Abe , Ken Aihara , Shoji Akiyama , Tetsuya Igarashi , Weifeng Qu , Yoshinori Hayamizu , Shigeru Saito
发明人： Takao Abe , Ken Aihara , Shoji Akiyama , Tetsuya Igarashi , Weifeng Qu , Yoshinori Hayamizu , Shigeru Saito
IPC分类号： C30B2906
CPC分类号： C30B29/06 , C30B15/00 , H01L21/3225 , Y10T428/21
摘要： A silicon wafer is produced by growing a silicon single crystal ingot having a resistivity of 100 &OHgr;·cm or more and an initial interstitial oxygen concentration of 10 to 25 ppma by the Czochralski method, processing the silicon single crystal ingot into a wafer, and subjecting the wafer to an oxygen precipitation heat treatment so that a residual interstitial oxygen concentration in the wafer should become 8 ppma or less. A silicon wafer produced as described above shows little decrease in resistivity even after a heat treatment in device production etc. Further, if a silicon wafer is produced and heat-treated so that the wafer should have the above-defined initial interstitial oxygen concentration and residual interstitial oxygen concentration, slip dislocations in a subsequent heat treatment process are prevented irrespective of resistivity. Furthermore, by forming an epitaxial layer on a surface of a silicon wafer of the present invention, a high resistivity epitaxial wafer can be produced, which is free from slip dislocations etc. and can be used for various devices.
摘要翻译：通过使用Czochralski法生长电阻率为100欧姆·厘米或更高的初始间隙氧浓度为10〜25ppma的硅单晶锭，将硅单晶锭加工成晶片，生产硅晶片，晶片进行氧析出热处理，使得晶片中的残留间隙氧浓度应变为8ppma以下。如上所述制造的硅晶片即使在器件制造等中进行热处理之后也几乎没有电阻降低。此外，如果制造硅晶片并进行热处理，使得晶片应具有上述初始间隙氧浓度和残留量间隙氧浓度，随后的热处理过程中的滑移位错被阻止，而与电阻率无关。此外，通过在本发明的硅晶片的表面上形成外延层，可以制造不含滑移位错等的高电阻率外延晶片，并可用于各种器件。

9. 发明授权

US06280522B1 Quartz glass crucible for pulling silicon single crystal and production process for such crucible 有权
标题翻译：用于拉硅单晶的石英玻璃坩埚和这种坩埚的生产工艺
公开(公告)号：US06280522B1
公开(公告)日：2001-08-28
申请号：US09508695
申请日：2000-03-29
申请人： Hiroyuki Watanabe , Hiroyuki Miyazawa , Tatsuhiro Sato , Satoshi Soeta , Tetsuya Igarashi
发明人： Hiroyuki Watanabe , Hiroyuki Miyazawa , Tatsuhiro Sato , Satoshi Soeta , Tetsuya Igarashi
IPC分类号： C30B1322
CPC分类号： C03B19/095 , C03B2201/23 , C03B2201/24 , C30B15/10 , C30B35/002 , Y10S65/08
摘要： There is provided a quartz glass crucible for pulling a silicon single crystal and a production process for the crucible, wherein an inner surface of the crucible is crystallized without addition of impurities during pulling a silicon single crystal, thereby impurities serving as causes of crystal defects being not incorporated into the silicon single crystal, so that deterioration of its inner surface is suppressed to improve a crystallization ratio, and accordingly productivity of the quartz glass crucible as well as a quality of the silicon single crystal is improved, and the quartz glass crucible for pulling a silicon single crystal comprises a crucible base body (3) made of a translucent quartz glass layer and a synthetic quartz glass layer (4) formed on an inner wall surface of the crucible base body (3), wherein a portion encircled by a brown ring on an inner surface of the quartz glass crucible is uniformly crystallized during pulling the silicon single crystal.
摘要翻译：提供了一种用于拉制硅单晶的石英玻璃坩埚和用于坩埚的制造方法，其中在拉取硅单晶时坩埚的内表面结晶而不添加杂质，从而导致晶体缺陷的原因是不掺入到硅单晶中，从而抑制其内表面的劣化以提高结晶化率，从而提高了石英玻璃坩埚的生产率以及硅单晶的质量，并且提高了石英玻璃坩埚拉硅单晶包括由半透明石英玻璃层制成的坩埚基体（3）和形成在坩埚基体（3）的内壁表面上的合成石英玻璃层（4），其中包围由石英玻璃坩埚的内表面上的棕色环在拉制硅单晶时均匀结晶。

10. 发明授权

US07879522B2 Carrier core material for electrophotographic developer, carrier and electrophotographic developer using the carrier 有权
标题翻译：用于电子照相显影剂的载体芯材料，载体和使用载体的电子照相显影剂
公开(公告)号：US07879522B2
公开(公告)日：2011-02-01
申请号：US12362571
申请日：2009-01-30
申请人： Koji Aga , Issei Shinmura , Tetsuya Igarashi
发明人： Koji Aga , Issei Shinmura , Tetsuya Igarashi
IPC分类号： G03G9/083
CPC分类号： G03G9/107 , G03G9/08 , G03G9/10 , G03G9/1075 , G03G9/113 , G03G9/1131
摘要： There are adopted: a carrier core material for an electrophotographic developer, including Mg, Ti and Fe as main components, and containing Fe, Mg and Ti in contents of 52 to 66% by weight, 3 to 12% by weight and 0.2 to 12% by weight, respectively; an electrophotographic developer carrier prepared by coating with a resin the surface of the carrier core material; and an electrophotographic developer using the carrier.
摘要翻译：采用以电子照相显影剂为载体芯材，以Mg，Ti，Fe为主要成分，含有52〜66重量％，3〜12重量％，0.2〜12重量份的Fe，Mg，Ti 重量％通过用树脂涂覆载体芯材的表面制备的电子照相显影剂载体; 和使用该载体的电子照相显影剂。

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