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    • 5. 发明申请
    • Wireles switching control system for building automation, lighting, security and appliances
    • 用于楼宇自动化,照明,安全和电器的线缆切换控制系统
    • US20070293208A1
    • 2007-12-20
    • US11818694
    • 2007-06-15
    • Kuam LohHong Lim
    • Kuam LohHong Lim
    • H04M3/00
    • H04L12/282H04L2012/2841
    • The present disclosure discloses an expandable wireless control system for and a method of managing and controlling building automation, lighting system, security system and electrical appliances. This system, based on a concept of modular mailboxes intercommunicating wirelessly by radio frequency and infrared frequency, can be used in new homes and buildings or easily retrofitted into existing homes and buildings without any need for massive rewiring, comprises of: microprocessor control switch panel, handheld remote devices, user input interface device, wireless multipurpose transceiver unit (MPU, 300) that interpose with remotely controllable subsystem of third party devices and electrical appliances to enable control of these devices to become a part of said system, and a wireless multipurpose transceiver with communication interface (MPUCOM, 302) in combination with a graphical user interface software that turns a personal computer into a setup computer, command centre, remote management gateway that connects to internet and telecommunication network (702).
    • 本公开公开了一种用于管理和控制楼宇自动化,照明系统,安全系统和电器的可扩展无线控制系统和方法。 该系统基于通过射频和红外频率无线通信的模块化邮箱的概念,可以用于新建住宅和建筑物,或者轻松地改装到现有家庭和建筑物中,而无需大量重新布线,包括:微处理器控制开关面板, 手持式远程设备,用户输入接口设备,与第三方设备和电器的远程可控子系统相互配合的无线多功能收发单元(MPU300),以使得能够控制这些设备成为所述系统的一部分,以及无线多功能收发器 与通信接口(MPUCOM,302)结合图形用户界面软件,将个人计算机转换成连接到互联网和电信网络的安装计算机,命令中心,远程管理网关(702)。
    • 7. 发明申请
    • Output buffer with controlled slew rate for driving a range of capacitive loads
    • 具有受控转换速率的输出缓冲器,用于驱动一系列容性负载
    • US20050200392A1
    • 2005-09-15
    • US10796386
    • 2004-03-09
    • Jun ChoHong Lim
    • Jun ChoHong Lim
    • H03K17/16
    • H03K19/00384H03K19/00361
    • Output buffer slew rate variation over variations in load capacitance is minimized by dividing output voltage transitions into distinct time and output current segments. During the first time segment, the first drive stage with the smallest current is employed. After subsequent delays, additional drive stages are employed and the load current is sequentially increased. Each drive stage employs a specifically sized feedback device which, depending upon its dimensions will provide either parasitic capacitance to slow transitions or positive feedback to speed up transitions. The first stages are sized to incorporate parasitic capacitance, resulting in little change in the settling time of small capacitance loads over prior art output buffers. Latter stages use positive feedback to quicken the transition time which dramatically improves the settling time for larger load capacitances over prior art output buffers.
    • 通过将输出电压转换分成不同的时间和输出电流段,可以最大限度地减小输出缓冲器的转换速率随负载电容变化的变化。 在第一时间段期间,采用具有最小电流的第一驱动级。 在随后的延迟之后,采用额外的驱动级,并且依次增加负载电流。 每个驱动级采用特定尺寸的反馈装置,其取决于其尺寸将为慢速转换提供寄生电容或提供正反馈以加速转换。 第一级的尺寸适合纳入寄生电容,导致小电容负载与现有技术输出缓冲器的稳定时间几乎没有变化。 后期阶段使用正反馈来加快转换时间,这大大提高了现有技术输出缓冲器对较大负载电容的稳定时间。
    • 8. 发明申请
    • Reactor for thin film deposition and method for depositing thin film on wafer using the reactor
    • 用于薄膜沉积的反应器和使用反应器在晶片上沉积薄膜的方法
    • US20050158469A1
    • 2005-07-21
    • US11080748
    • 2005-03-15
    • Young ParkKeun YooHong LimSang LeeIk LeeSang LeeHyun KyungJang Bae
    • Young ParkKeun YooHong LimSang LeeIk LeeSang LeeHyun KyungJang Bae
    • H01L21/20C23C16/44C23C16/455C23C16/509C23C16/00
    • C23C16/45574C23C16/45527C23C16/45536C23C16/45538C23C16/45544C23C16/45565C23C16/5096
    • A reactor for thin film deposition and a thin film deposition method using the reactor are provided. The reactor includes: a reactor block which receives a wafer transferred through a wafer transfer slit; a wafer block which is installed in the reactor block to receive the wafer thereon; a top plate disposed to cover the reactor block; a shower head which is mounted on the bottom of the top plate and diffuses gas toward the wafer; and an exhaust unit which exhausts the gas from the reactor block. A first supply pipeline which supplies a first reactant gas and/or an inert gas to the wafer; a second supply pipeline which supplies a second reactant gas and/or an inert gas to the wafer; and a plasma generator which generates plasma between the wafer block and shower head are included. The shower head includes: a first supply path connected to the first supply pipeline; a plurality of first diffuse holes formed in the bottom of the shower head at a constant interval; a first main path formed parallel to the plane of the shower head and connecting the plurality of first diffuse holes and the first supply path; a second supply path connected to the second supply pipeline; a plurality of second diffuse holes formed in the bottom of the shower head at a constant interval as the plurality of the first diffuse holes; and a second main path formed parallel to the plane of the shower head at a different height from the second main path and connecting the plurality of second diffuse holes and the second supply path.
    • 提供了一种用于薄膜沉积的反应器和使用该反应器的薄膜沉积方法。 反应器包括:反应器块,其接收通过晶片传送狭缝转移的晶片; 晶片块,其安装在反应器块中以在其上接收晶片; 设置成覆盖反应器块的顶板; 淋浴头,其安装在顶板的底部并将气体向晶片扩散; 以及从反应器块排出气体的排气单元。 一种向晶片提供第一反应气体和/或惰性气体的第一供应管线; 第二供应管线,其向所述晶片供给第二反应气体和/或惰性气体; 并且包括在晶片块和淋浴头之间产生等离子体的等离子体发生器。 淋浴头包括:连接到第一供应管道的第一供应路径; 以恒定的间隔形成在所述淋浴喷头的底部的多个第一扩散孔; 第一主路径,其平行于所述淋浴头的平面形成,并且连接所述多个第一扩散孔和所述第一供给路径; 连接到第二供应管线的第二供应路径; 多个第二扩散孔,作为多个第一扩散孔以恒定的间隔形成在所述淋浴喷头的底部; 以及第二主路径,其与所述淋浴喷头的平面平行,与所述第二主路径不同的高度,并且连接所述多个第二扩散孔和所述第二供应路径。
    • 10. 发明申请
    • Apparatus for depositing thin film on wafer
    • 用于在薄片上沉积薄膜的装置
    • US20060096534A1
    • 2006-05-11
    • US11264993
    • 2005-11-02
    • Hong LimSahng LeeTae SeoHo Chang
    • Hong LimSahng LeeTae SeoHo Chang
    • C23C16/00
    • C23C16/4481
    • A thin film deposition apparatus that can effectively use a chemical source having a high vaporization temperature is provided. The thin film deposition apparatus includes a chamber for depositing a thin film on a wafer, a canister for accommodating a liquid chemical source to be supplied to the chamber, and a vaporizer for vaporizing the liquid chemical source bubbled in the canister and providing the vaporized chemical source to the chamber. The vaporizer is installed on a top surface or lateral surface of the chamber by an adaptor block to be incorporated into the chamber. A first gas line between the vaporizer and the chamber is formed within the adaptor block.
    • 提供了可以有效地使用具有高蒸发温度的化学源的薄膜沉积装置。 薄膜沉积设备包括用于在晶片上沉积薄膜的腔室,用于容纳要供应到腔室的液体化学源的罐,以及用于蒸发鼓泡在罐中的液体化学源并提供蒸发化学物质的蒸发器 来源到房间。 蒸发器通过适配器块安装在室的顶表面或侧表面上,以装入室中。 蒸发器和室之间的第一气体管线形成在适配器块内。