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1. 发明申请

US20060096534A1 Apparatus for depositing thin film on wafer 审中-公开
标题翻译：用于在薄片上沉积薄膜的装置
公开(公告)号：US20060096534A1
公开(公告)日：2006-05-11
申请号：US11264993
申请日：2005-11-02
申请人： Hong Lim , Sahng Lee , Tae Seo , Ho Chang
发明人： Hong Lim , Sahng Lee , Tae Seo , Ho Chang
IPC分类号： C23C16/00
CPC分类号： C23C16/4481
摘要： A thin film deposition apparatus that can effectively use a chemical source having a high vaporization temperature is provided. The thin film deposition apparatus includes a chamber for depositing a thin film on a wafer, a canister for accommodating a liquid chemical source to be supplied to the chamber, and a vaporizer for vaporizing the liquid chemical source bubbled in the canister and providing the vaporized chemical source to the chamber. The vaporizer is installed on a top surface or lateral surface of the chamber by an adaptor block to be incorporated into the chamber. A first gas line between the vaporizer and the chamber is formed within the adaptor block.
摘要翻译：提供了可以有效地使用具有高蒸发温度的化学源的薄膜沉积装置。薄膜沉积设备包括用于在晶片上沉积薄膜的腔室，用于容纳要供应到腔室的液体化学源的罐，以及用于蒸发鼓泡在罐中的液体化学源并提供蒸发化学物质的蒸发器来源到房间。蒸发器通过适配器块安装在室的顶表面或侧表面上，以装入室中。蒸发器和室之间的第一气体管线形成在适配器块内。

2. 发明申请

US20050003088A1 Method of depositing thin film on wafer 审中-公开
标题翻译：在薄片上沉积薄膜的方法
公开(公告)号：US20050003088A1
公开(公告)日：2005-01-06
申请号：US10882532
申请日：2004-06-30
申请人： Young Park , Byung Cho , Hong Lim , Sang Lee , Sahng Lee , Tae Seo , Ho Chang
发明人： Young Park , Byung Cho , Hong Lim , Sang Lee , Sahng Lee , Tae Seo , Ho Chang
IPC分类号： H01L21/205 , C23C16/00 , C23C16/44 , H01L21/3065 , H01L21/31
CPC分类号： H01J37/32862 , C23C16/4405
摘要： Provided is a method of depositing a thin film on a wafer. The method includes an operation of loading a wafer on a wafer block; an operation of depositing a thin film on the wafer after loading the wafer; an operation of unloading the wafer on which the thin film is deposited from the wafer block; an operation of dry cleaning to remove thin films accumulated on an inner surface of the chamber after unloading the wafer; and an operation of chamber seasoning to form an atmosphere for depositing the main thin film after dry cleaning, wherein the dry cleaning operation comprises: an operation of loading a dummy wafer on the wafer block after unloading the wafer; an operation of main dry cleaning to remove the thin films accumulated on the inner surface of the chamber by dry cleaning by supplying an inert gas and a cleaning gas and supplying a RF energy to the chamber; an operation of sub-dry cleaning to remove an element of the cleaning gas used in the operation of main dry cleaning and remaining on the surface of the chamber by activating a gas selected from the group consisting of H2, NH3, Ar, and N2 by applying RF energy into the chamber while discontinuing supplying of the cleaning gas into the chamber; and an operation of unloading the dummy wafer from the wafer block after the sub-dry cleaning operation.
摘要翻译：提供了一种在晶片上沉积薄膜的方法。该方法包括将晶片装载在晶片块上的操作; 在加载晶片之后在晶片上沉积薄膜的操作; 从晶片块卸载其上沉积有薄膜的晶片的操作; 干燥清洗操作，以在卸载晶片之后去除积聚在室内表面上的薄膜; 以及室内调节的操作，以形成用于在干洗后沉积主薄膜的气氛，其中所述干洗操作包括：在卸载晶片之后将晶片块上的虚设晶片加载的操作; 主干燥操作，通过供给惰性气体和清洁气体并向室提供RF能量通过干洗来除去积聚在室内表面上的薄膜; 通过将通过活化从由H 2，NH 3，Ar和N 2组成的组中选出的气体来除去主要干洗操作中使用的清洁气体的元素并残留在室的表面上的次干洗操作，在停止将清洁气体供应到所述室中的同时将RF能量施加到所述室中; 以及在次干洗操作之后从晶片块卸载虚设晶片的操作。

3. 发明申请

US20060055029A1 Integrated heatspreader for use in wire bonded ball grid array semiconductor packages 有权
标题翻译：集成式散热器，适用于线栅球栅阵列半导体封装
公开(公告)号：US20060055029A1
公开(公告)日：2006-03-16
申请号：US10939082
申请日：2004-09-10
申请人： Maurice Othieno , Hong Lim , Qwai Low
发明人： Maurice Othieno , Hong Lim , Qwai Low
IPC分类号： H01L23/34
CPC分类号： H01L23/3735 , H01L23/3677 , H01L24/48 , H01L24/73 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73265 , H01L2924/00014 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： The present invention is directed toward systems, packages, and methods for providing improved thermal performance in such packages and systems. Embodiments of the invention include a semiconductor integrated circuit (IC) package having a substrate with a heat spreader mounted on the substrate. An IC die is mounted to the heat spreader such that the heat spreader lies in between the die and the substrate. The invention is also directed to a heat spreader plate useable in a semiconductor package. The heat spreader plate comprises a plate comprised of thermally conductive material suitable for attachment to a packaging substrate wherein the plate includes openings for exposing electrical bonding surfaces of a packaging substrate when the heater spreader plate is mounted on the packaging substrate. Such openings enable wirebonding between the exposed electrical bonding surfaces of the substrate and an integrated circuit die to complete construction of a package including the heatspreader.
摘要翻译：本发明涉及用于在这种包装和系统中提供改进的热性能的系统，包装和方法。本发明的实施例包括具有安装在基板上的散热器的基板的半导体集成电路（IC）封装。 IC散热器安装在散热器上，使得散热器位于模具和基板之间。本发明还涉及可用于半导体封装的散热板。散热板包括由适于附接到包装基板的导热材料构成的板，其中，当加热器散布板安装在包装基板上时，该板包括用于暴露包装基板的电接合表面的开口。这种开口使得能够在基板的暴露的电接合表面和集成电路管芯之间进行引线接合，以完成包括散热器的封装的构造。

4. 发明申请

US20050281011A1 Heat spreader in integrated circuit package 有权
标题翻译：散热器集成电路封装
公开(公告)号：US20050281011A1
公开(公告)日：2005-12-22
申请号：US10873387
申请日：2004-06-22
申请人： Hong Lim , Maurice Othieno , Qwai Low
发明人： Hong Lim , Maurice Othieno , Qwai Low
IPC分类号： H01L23/31 , H01L23/433 , H05K1/18
CPC分类号： H01L23/4334 , H01L23/3128 , H01L24/48 , H01L24/73 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/00014 , H01L2924/14 , H01L2924/15311 , H01L2924/16152 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： An integrated circuit (IC) package comprises a package substrate, an IC die mounted on the package substrate, a wire bond electrically connecting the IC die and the package substrate, and a heat spreader mounted on the package substrate. The heat spreader comprises a hole through a portion thereof. The IC die and the wire bond are disposed substantially between the heat spreader and the package substrate.
摘要翻译：集成电路（IC）封装包括封装基板，安装在封装基板上的IC管芯，将IC芯片与封装基板电连接的引线键合件和安装在封装基板上的散热器。散热器包括穿过其一部分的孔。 IC芯片和引线接合件基本上设置在散热器和封装衬底之间。

5. 发明授权

US06323238B1 Benzopyranyl guanidine derivatives, process for preparation thereof, and pharmaceutical compositions containing them 失效
标题翻译：苯并吡喃基胍衍生物，其制备方法和含有它们的药物组合物
公开(公告)号：US06323238B1
公开(公告)日：2001-11-27
申请号：US09693082
申请日：2000-10-20
申请人： Sung-Eun Yoo , Kyu Yang Yi , Sun Kyung Lee , Nak-Jeong Kim , Jee Hee Suh , Young Sook Park , Sun Kyung Hwang , Hwa Sup Shin , Byung Ho Lee , Ho Won Seo , Hong Lim , Sun-Ok Kim , In Sun Cho , Miae Namgoong , Dongsoo Jang
发明人： Sung-Eun Yoo , Kyu Yang Yi , Sun Kyung Lee , Nak-Jeong Kim , Jee Hee Suh , Young Sook Park , Sun Kyung Hwang , Hwa Sup Shin , Byung Ho Lee , Ho Won Seo , Hong Lim , Sun-Ok Kim , In Sun Cho , Miae Namgoong , Dongsoo Jang
IPC分类号： C07D31174
CPC分类号： C07D407/04 , A61K31/155 , A61K31/352 , C07D311/68
摘要： The present invention relates to novel benzopyranyl guanidine derivatives of the formula 1, process for preparation therof and pharmaceutical use of the benzopyranyl guanidine derivatives. The benzopyranyl guanidine derivatives of the present invention can be used for protecting heart, neuronal cell or brain damage, preserving organs, and also the benzopyranyl guanidine derivatives are pharmacologically useful for inhibiting NO generation, and for suppressing lipid peroxidation, angiogenesis or restenosis. Wherein R1, R2, R3, R4, R5, R6, n and * are each defined in specification.
摘要翻译：本发明涉及式1的新型苯并吡喃基胍衍生物，其制备方法和苯并吡喃基胍衍生物的药物用途。本发明的苯并吡喃基胍衍生物可用于保护心脏，神经元细胞或脑损伤，保存器官，苯并吡喃基胍衍生物在药理学上可用于抑制NO产生，抑制脂质过氧化，血管生成或再狭窄。其中R1 ，R2，R3，R4，R5，R6，n和*各自在说明书中定义。

6. 发明申请

US20070293208A1 Wireles switching control system for building automation, lighting, security and appliances 审中-公开
标题翻译：用于楼宇自动化，照明，安全和电器的线缆切换控制系统
公开(公告)号：US20070293208A1
公开(公告)日：2007-12-20
申请号：US11818694
申请日：2007-06-15
申请人： Kuam Loh , Hong Lim
发明人： Kuam Loh , Hong Lim
IPC分类号： H04M3/00
CPC分类号： H04L12/282 , H04L2012/2841
摘要： The present disclosure discloses an expandable wireless control system for and a method of managing and controlling building automation, lighting system, security system and electrical appliances. This system, based on a concept of modular mailboxes intercommunicating wirelessly by radio frequency and infrared frequency, can be used in new homes and buildings or easily retrofitted into existing homes and buildings without any need for massive rewiring, comprises of: microprocessor control switch panel, handheld remote devices, user input interface device, wireless multipurpose transceiver unit (MPU, 300) that interpose with remotely controllable subsystem of third party devices and electrical appliances to enable control of these devices to become a part of said system, and a wireless multipurpose transceiver with communication interface (MPUCOM, 302) in combination with a graphical user interface software that turns a personal computer into a setup computer, command centre, remote management gateway that connects to internet and telecommunication network (702).
摘要翻译：本公开公开了一种用于管理和控制楼宇自动化，照明系统，安全系统和电器的可扩展无线控制系统和方法。该系统基于通过射频和红外频率无线通信的模块化邮箱的概念，可以用于新建住宅和建筑物，或者轻松地改装到现有家庭和建筑物中，而无需大量重新布线，包括：微处理器控制开关面板，手持式远程设备，用户输入接口设备，与第三方设备和电器的远程可控子系统相互配合的无线多功能收发单元（MPU300），以使得能够控制这些设备成为所述系统的一部分，以及无线多功能收发器与通信接口（MPUCOM，302）结合图形用户界面软件，将个人计算机转换成连接到互联网和电信网络的安装计算机，命令中心，远程管理网关（702）。

7. 发明申请

US20060035948A1 Benzopyran derivatives substituted with secondary amines including tetrazole, method for the preparation thereof and pharmaceutical compositions containing them 失效
标题翻译：用包括四唑的仲胺取代的苯并吡喃衍生物，其制备方法和含有它们的药物组合物
公开(公告)号：US20060035948A1
公开(公告)日：2006-02-16
申请号：US10510835
申请日：2003-04-10
申请人： Hong Lim , Dong-Ha Lee , Sun-Ok Kim , In-Young Choi , Sung-Eun Yoo , Kyu-Yang Yi , Sun-Kyung Lee , Jee-Hee Suh , Nak-Jeong Kim , Byung-Ho Lee , Ho -Won Seo , Hwa-Sup Shin
发明人： Hong Lim , Dong-Ha Lee , Sun-Ok Kim , In-Young Choi , Sung-Eun Yoo , Kyu-Yang Yi , Sun-Kyung Lee , Jee-Hee Suh , Nak-Jeong Kim , Byung-Ho Lee , Ho -Won Seo , Hwa-Sup Shin
IPC分类号： A61K31/41 , C07D405/02
CPC分类号： C07D405/12
摘要： The present invention relates to benzopyran derivatives substituted with secondary amines including tetrazole, method for preparing thereof and pharmaceutical compositions containing them. The compounds of the present invention can be used for protecting neuronal cells and brain damage; antioxidation; inhibiting NO generation; protecting heart; suppressing angiogenesis; protecting preserving organs such as kidney, heart and tissue, and protecting organs in major cardiovascular surgery.
摘要翻译：本发明涉及用包括四唑的仲胺取代的苯并吡喃衍生物，其制备方法和含有它们的药物组合物。本发明的化合物可用于保护神经细胞和脑损伤; 抗氧化; 抑制NO产生; 保护心脏抑制血管发生; 保护肾脏，心脏和组织等保护器官，并在主要心血管手术中保护器官。

8. 发明申请

US20050200392A1 Output buffer with controlled slew rate for driving a range of capacitive loads 失效
标题翻译：具有受控转换速率的输出缓冲器，用于驱动一系列容性负载
公开(公告)号：US20050200392A1
公开(公告)日：2005-09-15
申请号：US10796386
申请日：2004-03-09
申请人： Jun Cho , Hong Lim
发明人： Jun Cho , Hong Lim
IPC分类号： H03K17/16
CPC分类号： H03K19/00384 , H03K19/00361
摘要： Output buffer slew rate variation over variations in load capacitance is minimized by dividing output voltage transitions into distinct time and output current segments. During the first time segment, the first drive stage with the smallest current is employed. After subsequent delays, additional drive stages are employed and the load current is sequentially increased. Each drive stage employs a specifically sized feedback device which, depending upon its dimensions will provide either parasitic capacitance to slow transitions or positive feedback to speed up transitions. The first stages are sized to incorporate parasitic capacitance, resulting in little change in the settling time of small capacitance loads over prior art output buffers. Latter stages use positive feedback to quicken the transition time which dramatically improves the settling time for larger load capacitances over prior art output buffers.
摘要翻译：通过将输出电压转换分成不同的时间和输出电流段，可以最大限度地减小输出缓冲器的转换速率随负载电容变化的变化。在第一时间段期间，采用具有最小电流的第一驱动级。在随后的延迟之后，采用额外的驱动级，并且依次增加负载电流。每个驱动级采用特定尺寸的反馈装置，其取决于其尺寸将为慢速转换提供寄生电容或提供正反馈以加速转换。第一级的尺寸适合纳入寄生电容，导致小电容负载与现有技术输出缓冲器的稳定时间几乎没有变化。后期阶段使用正反馈来加快转换时间，这大大提高了现有技术输出缓冲器对较大负载电容的稳定时间。

9. 发明申请

US20050158469A1 Reactor for thin film deposition and method for depositing thin film on wafer using the reactor 审中-公开
标题翻译：用于薄膜沉积的反应器和使用反应器在晶片上沉积薄膜的方法
公开(公告)号：US20050158469A1
公开(公告)日：2005-07-21
申请号：US11080748
申请日：2005-03-15
申请人： Young Park , Keun Yoo , Hong Lim , Sang Lee , Ik Lee , Sang Lee , Hyun Kyung , Jang Bae
发明人： Young Park , Keun Yoo , Hong Lim , Sang Lee , Ik Lee , Sang Lee , Hyun Kyung , Jang Bae
IPC分类号： H01L21/20 , C23C16/44 , C23C16/455 , C23C16/509 , C23C16/00
CPC分类号： C23C16/45574 , C23C16/45527 , C23C16/45536 , C23C16/45538 , C23C16/45544 , C23C16/45565 , C23C16/5096
摘要： A reactor for thin film deposition and a thin film deposition method using the reactor are provided. The reactor includes: a reactor block which receives a wafer transferred through a wafer transfer slit; a wafer block which is installed in the reactor block to receive the wafer thereon; a top plate disposed to cover the reactor block; a shower head which is mounted on the bottom of the top plate and diffuses gas toward the wafer; and an exhaust unit which exhausts the gas from the reactor block. A first supply pipeline which supplies a first reactant gas and/or an inert gas to the wafer; a second supply pipeline which supplies a second reactant gas and/or an inert gas to the wafer; and a plasma generator which generates plasma between the wafer block and shower head are included. The shower head includes: a first supply path connected to the first supply pipeline; a plurality of first diffuse holes formed in the bottom of the shower head at a constant interval; a first main path formed parallel to the plane of the shower head and connecting the plurality of first diffuse holes and the first supply path; a second supply path connected to the second supply pipeline; a plurality of second diffuse holes formed in the bottom of the shower head at a constant interval as the plurality of the first diffuse holes; and a second main path formed parallel to the plane of the shower head at a different height from the second main path and connecting the plurality of second diffuse holes and the second supply path.
摘要翻译：提供了一种用于薄膜沉积的反应器和使用该反应器的薄膜沉积方法。反应器包括：反应器块，其接收通过晶片传送狭缝转移的晶片; 晶片块，其安装在反应器块中以在其上接收晶片; 设置成覆盖反应器块的顶板; 淋浴头，其安装在顶板的底部并将气体向晶片扩散; 以及从反应器块排出气体的排气单元。一种向晶片提供第一反应气体和/或惰性气体的第一供应管线; 第二供应管线，其向所述晶片供给第二反应气体和/或惰性气体; 并且包括在晶片块和淋浴头之间产生等离子体的等离子体发生器。淋浴头包括：连接到第一供应管道的第一供应路径; 以恒定的间隔形成在所述淋浴喷头的底部的多个第一扩散孔; 第一主路径，其平行于所述淋浴头的平面形成，并且连接所述多个第一扩散孔和所述第一供给路径; 连接到第二供应管线的第二供应路径; 多个第二扩散孔，作为多个第一扩散孔以恒定的间隔形成在所述淋浴喷头的底部; 以及第二主路径，其与所述淋浴喷头的平面平行，与所述第二主路径不同的高度，并且连接所述多个第二扩散孔和所述第二供应路径。

10. 发明授权

US07414068B2 Benzopyran derivatives substituted with secondary amines including tetrazole, method for the preparation thereof and pharmaceutical compositions containing them 失效
标题翻译：用包括四唑的仲胺取代的苯并吡喃衍生物，其制备方法和含有它们的药物组合物
公开(公告)号：US07414068B2
公开(公告)日：2008-08-19
申请号：US10510835
申请日：2003-04-10
申请人： Hong Lim , Dong-Ha Lee , Sun-Ok Kim , In-Young Choi , Sung-Eun Yoo , Kyu-Yang Yi , Sun-Kyung Lee , Jee-Hee Suh , Nak-Jeong Kim , Byung-Ho Lee , Ho-Won Seo , Hwa-Sup Shin
发明人： Hong Lim , Dong-Ha Lee , Sun-Ok Kim , In-Young Choi , Sung-Eun Yoo , Kyu-Yang Yi , Sun-Kyung Lee , Jee-Hee Suh , Nak-Jeong Kim , Byung-Ho Lee , Ho-Won Seo , Hwa-Sup Shin
IPC分类号： A61K31/41 , C07D257/04
CPC分类号： C07D405/12
摘要： The present invention relates to benzopyran derivatives substituted with secondary amines including tetrazole, method for preparing thereof and pharmaceutical compositions containing them. The compounds of the present invention can be used for protecting neuronal cells and brain damage; antioxidation; inhibiting NO generation; protecting heart; suppressing angiogenesis; protecting preserving organs such as kidney, heart and tissue, and protecting organs in major cardiovascular surgery.
摘要翻译：本发明涉及用包括四唑的仲胺取代的苯并吡喃衍生物，其制备方法和含有它们的药物组合物。本发明的化合物可用于保护神经细胞和脑损伤; 抗氧化; 抑制NO产生; 保护心脏抑制血管发生; 保护肾脏，心脏和组织等保护器官，并在主要心血管手术中保护器官。

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