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    • 1. 发明申请
    • Method for designing a semiconductor integrated circuit and a semiconductor integrated circuit
    • 半导体集成电路和半导体集成电路的设计方法
    • US20050155001A1
    • 2005-07-14
    • US10988658
    • 2004-11-16
    • Koichi KinoshitaTakeshi IshigakiYukihiro Urakawa
    • Koichi KinoshitaTakeshi IshigakiYukihiro Urakawa
    • G06F17/50H01L21/82
    • G06F17/5045
    • A method for designing a semiconductor integrated circuit, includes placing first, second and third cells, respectively including first stage synchronous circuit having signal propagation time, second stage synchronous circuit having a signal propagation time almost equal to the first stage synchronous circuit, and logic circuit; routing wirings so as to electrically connect the first to third cells; verifying signal propagation timing of the semiconductor integrated circuit having the first to third cells; adjusting the signal propagation timing based on critical path of the signal propagation timing of the semiconductor integrated circuit; and extracting the critical path to replace the second stage synchronous circuit by synchronous circuit of different synchronous type from the first stage synchronous circuit so as to provide a shorter signal propagation time than the first stage synchronous circuit.
    • 一种用于设计半导体集成电路的方法,包括分别包括具有信号传播时间的第一级同步电路的第一,第二和第三单元,具有几乎等于第一级同步电路的信号传播时间的第二级同步电路和逻辑电路 ; 路由布线以便电连接第一至第三单元; 验证具有第一至第三小区的半导体集成电路的信号传播定时; 基于半导体集成电路的信号传播定时的关键路径调整信号传播定时; 并通过与第一级同步电路不同同步型的同步电路提取替代第二级同步电路的关键路径,以提供比第一级同步电路更短的信号传播时间。
    • 6. 发明授权
    • Face feature point detection apparatus and feature point detection apparatus
    • 面部特征点检测装置和特征点检测装置
    • US07936902B2
    • 2011-05-03
    • US11667670
    • 2004-11-12
    • Koichi Kinoshita
    • Koichi Kinoshita
    • G06K9/00
    • G06K9/00281G06T7/75G06T2207/30201
    • Plural nodes are arranged at predetermined initial positions, and feature values at plural sampling points around each node are obtained as a node feature value of each corresponding node. An error estimator indicating displacement between the current position of each node and the position of corresponding feature point is obtained based on correlation information on a difference between the node feature value obtained in a state in which the plural nodes are arranged at correct positions of the corresponding feature points and the node feature value obtained in a state in which the plural nodes are arranged at wrong positions of the corresponding feature points in a learning image, correlation information on a difference between the correct position and the wrong position, and a node feature value of each node. The position of each feature point is estimated in an input image based on the error estimator and the current position of each node.
    • 多个节点被布置在预定的初始位置,并且获得每个节点周围多个采样点的特征值作为每个对应节点的节点特征值。 基于相关信息获得各个节点的当前位置与对应的特征点的位置之间的位移的误差估计器,该相关信息是在将多个节点布置在相应的位置的正确位置的状态下获得的节点特征值 特征点和在多个节点布置在学习图像中的相应特征点的错误位置的状态下获得的节点特征值,关于正确位置和错误位置之间的差异的相关信息以及节点特征值 的每个节点。 基于误差估计器和每个节点的当前位置,在输入图像中估计每个特征点的位置。
    • 8. 发明授权
    • Semiconductor integrated circuit
    • 半导体集成电路
    • US07329938B2
    • 2008-02-12
    • US10845247
    • 2004-05-14
    • Koichi Kinoshita
    • Koichi Kinoshita
    • H01L29/00
    • H01L27/0207H01L27/11807
    • A semiconductor integrated circuit includes a first cell spanning one of the p-wells and one of the n-wells adjacent to each other, and having one end on a dividing line inside the p-well and another end on a dividing line inside the n-well, and having a height determined by the one end and the another end; and a second cell, spanning another one of the p-wells and another one of the n-wells adjacent to each other, with a height covering the entire widths of the p- and n-wells measured along the column direction, the height of the second cell is double that of the first cell.
    • 一种半导体集成电路包括跨越p阱中的一个和彼此相邻的n个阱中的一个的第一单元,并且在p阱内部的分隔线上的一端和n阱内的分界线上的另一端 并且具有由一端和另一端确定的高度; 以及跨越另一个p阱和彼此相邻的n个阱中的另一个的第二单元,具有覆盖沿着列方向测量的p阱和n阱的整个宽度的高度, 第二个单元格是第一个单元格的两倍。